SUBSTRATE PROCESSING APPARATUS
    1.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 有权
    基板加工设备

    公开(公告)号:US20100150687A1

    公开(公告)日:2010-06-17

    申请号:US12619050

    申请日:2009-11-16

    IPC分类号: H01L21/677 H01L21/687

    摘要: Provided is a substrate processing apparatus configured to attain conflicting purposes of high throughput and footprint reduction. The substrate processing apparatus comprises a carrying chamber, and a loadlock chamber and at least two process chambers that are arranged around the carrying chamber. The carrying chamber comprises a substrate carrying unit configured to carry a substrate between the loadlock chamber and the process chambers. The substrate carrying unit comprises a first arm provided with a first finger and a second finger, and leading ends of the first and second fingers extend horizontally in the same direction. Each of the process chambers comprises a first process unit and a second process unit, and the second process unit is disposed at a side of the process chamber distant from the carrying chamber with the first process unit being disposed therebetween.

    摘要翻译: 提供了一种被配置为实现高吞吐量和占地面积减小的冲突目的的基板处理装置。 基板处理装置包括承载室和负载锁定室以及布置在承载室周围的至少两个处理室。 承载室包括衬底承载单元,其构造成在负荷锁定室和处理室之间承载衬底。 基板承载单元包括设置有第一指状物和第二手指的第一臂,并且第一和第二指状物的前端沿相同方向水平延伸。 每个处理室包括第一处理单元和第二处理单元,并且第二处理单元设置在处理室远离输送室的一侧,其中第一处理单元设置在其间。

    Substrate Processing Apparatus
    2.
    发明申请
    Substrate Processing Apparatus 有权
    基板加工装置

    公开(公告)号:US20080153308A1

    公开(公告)日:2008-06-26

    申请号:US10571898

    申请日:2005-02-16

    IPC分类号: H01L21/00 C23C16/00

    摘要: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.

    摘要翻译: 一种基板处理装置,包括:处理室,其容纳至少一个基板; 将处理气体供给到处理室内的气体供给系统; 用于排出处理室中的气体的排气系统; 以及至少一对电极,其将处理气体置于活性状态并容纳在保护管中,使得电极可以插入保护管中并从保护管中拉出,其中电极容纳在保护管中 在电极的至少一部分弯曲的状态下,电极由柔性部件形成。

    SUBSTRATE PROCESSING APPARATUS
    4.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 有权
    基板加工设备

    公开(公告)号:US20110209664A1

    公开(公告)日:2011-09-01

    申请号:US13102694

    申请日:2011-05-06

    摘要: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.

    摘要翻译: 一种基板处理装置,包括:处理室,其容纳至少一个基板; 将处理气体供给到处理室内的气体供给系统; 用于排出处理室中的气体的排气系统; 以及至少一对电极,其将处理气体置于活性状态并容纳在保护管中,使得电极可以插入保护管中并从保护管中拉出,其中电极容纳在保护管中 在电极的至少一部分弯曲的状态下,电极由柔性部件形成。

    SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF DEVICE
    8.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF DEVICE 审中-公开
    基板加工装置及其制造方法

    公开(公告)号:US20100258530A1

    公开(公告)日:2010-10-14

    申请号:US12820893

    申请日:2010-06-22

    摘要: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insulating transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.

    摘要翻译: 基板处理器能够通过组合在整个处理室中产生的远程等离子体和等离子体的优点来实现适当的处理。 基板处理器包括安装在处理空间(1)周围并接地的导电构件(10)和安装在导电构件(10)内部的一对电极(4)。 绝缘变压器(7)的初级线圈连接到高频电源单元(14),次级线圈连接到电极(4)。 开关(13)连接到将次级线圈连接到电极(4)的连接线。 通过使用开关(13)设置/切断线路与地球的连接,可以改变在处理空间(1)中产生等离子体的区域。

    Substrate processing and method of manufacturing device
    10.
    发明申请
    Substrate processing and method of manufacturing device 审中-公开
    基板加工及其制造方法

    公开(公告)号:US20060260544A1

    公开(公告)日:2006-11-23

    申请号:US10547320

    申请日:2004-03-04

    IPC分类号: H01L21/44 C23C16/00

    摘要: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insularing transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.

    摘要翻译: 基板处理器能够通过组合在整个处理室中产生的远程等离子体和等离子体的优点来实现适当的处理。 基板处理器包括安装在处理空间(1)周围并接地的导电构件(10)和安装在导电构件(10)内部的一对电极(4)。 岛状变压器(7)的初级线圈连接到高频电源单元(14),次级线圈连接到电极(4)。 开关(13)连接到将次级线圈连接到电极(4)的连接线。 通过使用开关(13)设置/切断线路与地球的连接,可以改变在处理空间(1)中产生等离子体的区域。