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公开(公告)号：US07535154B2
公开(公告)日：2009-05-19
申请号：US12099880
申请日：2008-04-09
申请人： Keiichi Umeda , Hideki Kawamura
发明人： Keiichi Umeda , Hideki Kawamura
IPC分类号： H03H9/17 , H01L41/047
CPC分类号： H03H9/02086 , H03H9/02157 , H03H9/173 , H03H9/175 , H03H9/584 , H03H9/587
摘要： In a piezoelectric resonator, a portion of a thin film unit is supported by a substrate. A portion of the thin film unit acoustically isolated from the substrate includes a) a vibration unit and b) an additional film. The vibration unit includes a piezoelectric film sandwiched between a pair of electrodes. The piezoelectric film is overlapped with the pair of electrodes in plan view. The additional film is disposed on one of the piezoelectric film and the electrodes so as to extend along at least a portion of the periphery of the vibration unit. When x (MN·second/m3) denotes an acoustic impedance of the additional film defined by the square root of the product of the density and Young's modulus, A denotes the product of the density and the thickness of the additional film, B denotes the product of the densities and the thicknesses of the electrodes, and y=A/B, the following conditional expressions are satisfied: In the range of 9.0≦x
摘要翻译： 在压电谐振器中，薄膜单元的一部分被基板支撑。 从衬底声学隔离的薄膜单元的一部分包括a）振动单元和b）附加膜。 振动单元包括夹在一对电极之间的压电薄膜。 压电膜在平面图中与该对电极重叠。 附加膜设置在压电膜和电极中的一个上，以沿着振动单元的周边的至少一部分延伸。 当x（MN.second / m3）表示由密度和杨氏模量的乘积的平方根定义的附加膜的声阻抗时，A表示附加膜的密度和厚度的乘积，B表示 电极的密度和厚度的乘积以及y = A / B，满足以下条件表达式：<？in-line-formula description =“In-line formula”end =“lead”？> 9.0 <= x <44.0，0.0092.x + 0.88 <= y <0.067.x + 0.60（1a）<？在线公式描述=“在线公式”end =“tail”？> <？in -line-formula description =“In-line Formulas”end =“lead”？>在44.0 <= x <79.0，-0.0035.x + 1.45 <= y <0.015.x + 2.9（1b）的范围内。 ？in-line-formula description =“In-line Formulas”end =“tail”？>
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公开(公告)号：US20080048803A1
公开(公告)日：2008-02-28
申请号：US11933720
申请日：2007-11-01
申请人： Keiichi Umeda , Hideki Kawamura
发明人： Keiichi Umeda , Hideki Kawamura
IPC分类号： H03H9/58
CPC分类号： H03H9/0095 , H03H9/009 , H03H9/6493
摘要： Providing is a piezoelectric thin-film filter including resonators connected in a lattice pattern, which can achieve large attenuation at frequencies away from a passband and improve steepness near two ends of the passband without involving an additional special step. Second resonators C—2 or first and third resonators C—1 and Cx—1 connected in parallel form series-arm resonators or parallel-arm resonators C—1 connected in a lattice pattern. The capacitance of each second resonator C—2 is larger than the capacitance of each first resonator C—1. The capacitance of each third resonator Cx—1 is substantially equal to the difference between the capacitance of the second resonator C—2 and the capacitance of the first resonator C—1. The resonant frequency of the first resonator C—1 higher than the resonant frequency of the second resonator C—2. The anti-resonant frequency of the third resonator Cx—1 is higher than the resonant frequency of the second resonator C—2 and lower than the resonant frequency of the first resonator C—1.
摘要翻译： 提供一种包括以格子图案连接的谐振器的压电薄膜滤波器，其可以在远离通带的频率处获得大的衰减，并且改善通带两端附近的陡度，而不需要额外的特殊步骤。 并联连接的第二谐振器C 2 - 2或第一和第三谐振器C 1 - 1和C x - 1串联臂谐振器或并联臂 以晶格图案连接的谐振器C 1 - 1。 每个第二谐振器C 2 - 2的电容大于每个第一谐振器C 1 - 1的电容。每个第三谐振器C x的电容 - 1基本上等于第二谐振器C 2 - 2的电容和第一谐振器C 1 - 1的电容之间的差。第一谐振器的谐振频率 高于第二谐振器C 2的谐振频率。第三谐振器Cx1的反谐振频率为 高于第二谐振器C 2 - 2的谐振频率并且低于第一谐振器C 1 - 2的谐振频率。
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3.发明授权公开(公告)号：US07504910B2
公开(公告)日：2009-03-17
申请号：US11583696
申请日：2006-10-20
申请人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
发明人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
CPC分类号： H03H9/02086 , H03H9/174
摘要： A thin-film piezoelectric resonator having a thin-film portion with a piezoelectric thin film disposed between a pair of opposing electrodes, an insulating layer formed on one of the pair of electrodes of the thin-film portion, and a substrate supporting the other electrode of the thin-film portion. The thin-film portion and the insulating layer together vibrate in at least one mode of second and higher harmonic modes, and an antinode in the at least one mode of the second and higher harmonic modes is located in the insulating layer.
摘要翻译： 一种薄膜压电谐振器，具有设置在一对相对电极之间的具有压电薄膜的薄膜部分，形成在薄膜部分的一对电极中的一个上的绝缘层和支撑另一个电极的基板 的薄膜部分。 薄膜部分和绝缘层一起在至少一种第二和高次谐波模式下振动，并且第二和高次谐波模式的至少一种模式中的波腹位于绝缘层中。
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公开(公告)号：US20070035207A1
公开(公告)日：2007-02-15
申请号：US11583696
申请日：2006-10-20
申请人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
发明人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
IPC分类号： H01L41/08
CPC分类号： H03H9/02086 , H03H9/174
摘要： A thin-film piezoelectric resonator having a thin-film portion with a piezoelectric thin film disposed between a pair of opposing electrodes, an insulating layer formed on one of the pair of electrodes of the thin-film portion, and a substrate supporting the other electrode of the thin-film portion. The thin-film portion and the insulating layer together vibrate in at least one mode of second and higher harmonic modes, and an antinode in the at least one mode of the second and higher harmonic modes is located in the insulating layer.
摘要翻译： 一种薄膜压电谐振器，具有设置在一对相对电极之间的具有压电薄膜的薄膜部分，形成在薄膜部分的一对电极中的一个上的绝缘层和支撑另一个电极的基板 的薄膜部分。 薄膜部分和绝缘层一起在至少一种第二和高次谐波模式下振动，并且第二和高次谐波模式的至少一种模式中的波腹位于绝缘层中。
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公开(公告)号：US07414497B2
公开(公告)日：2008-08-19
申请号：US11933720
申请日：2007-11-01
申请人： Keiichi Umeda , Hideki Kawamura
发明人： Keiichi Umeda , Hideki Kawamura
CPC分类号： H03H9/0095 , H03H9/009 , H03H9/6493
摘要： Providing is a piezoelectric thin-film filter including resonators connected in a lattice pattern, which can achieve large attenuation at frequencies away from a passband and improve steepness near two ends of the passband without involving an additional special step. Second resonators C—2 or first and third resonators C—1 and Cx—1 connected in parallel form series-arm resonators or parallel-arm resonators C—1 connected in a lattice pattern. The capacitance of each second resonator C—2 is larger than the capacitance of each first resonator C—1. The capacitance of each third resonator Cx—1 is substantially equal to the difference between the capacitance of the second resonator C—2 and the capacitance of the first resonator C—1. The resonant frequency of the first resonator C—1 higher than the resonant frequency of the second resonator C—2. The anti-resonant frequency of the third resonator Cx—1 is higher than the resonant frequency of the second resonator C—2 and lower than the resonant frequency of the first resonator C—1.
摘要翻译： 提供一种包括以格子图案连接的谐振器的压电薄膜滤波器，其可以在远离通带的频率处获得大的衰减，并且改善通带两端附近的陡度，而不需要额外的特殊步骤。 并联连接的第二谐振器C 2 - 2或第一和第三谐振器C 1 - 1和C x - 1串联臂谐振器或并联臂 以晶格图案连接的谐振器C 1 - 1。 每个第二谐振器C 2 - 2的电容大于每个第一谐振器C 1 - 2的电容。 每个第三谐振器C x 1 - 1的电容基本上等于第二谐振器C 2 - 2的电容和第一谐振器C 1 - - 1。 第一谐振器C 1 - 1的谐振频率高于第二谐振器C 2的共振频率。 第三谐振器Cx1-1的反谐振频率高于第二谐振器C 2 - 2的谐振频率并且低于第一谐振器C的谐振频率 1。
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公开(公告)号：US09418793B2
公开(公告)日：2016-08-16
申请号：US13535388
申请日：2012-06-28
申请人： Keiichi Umeda
发明人： Keiichi Umeda
摘要： A variable capacitance device includes a substrate, a beam portion, lower drive electrodes and upper drive electrodes. The beam portion is made of an insulating material and is connected to the substrate via an anchor portion. In the lower drive electrode and the upper drive electrode, electrostatic attraction generated by the application of a DC voltage continuously changes. In the lower drive electrodes and the upper drive electrode, electrostatic capacitance generated by the application of an RF signal between the electrodes on both sides continuously changes in accordance with the deformation of the beam portion due to the electrostatic attraction. The beam portion includes an inner circumferential portion including the upper drive electrode, an outer circumferential portion including the upper drive electrode, and ladder portions sandwiched by the inner circumferential portion and the outer circumferential portion. The beam portion has a cross-sectional area that is reduced by the ladder portions.
摘要翻译： 可变电容器件包括衬底，光束部分，下驱动电极和上驱动电极。 梁部分由绝缘材料制成，并通过锚定部分与基板连接。 在下驱动电极和上驱动电极中，施加直流电压产生的静电吸引力持续变化。 在下驱动电极和上驱动电极中，通过在两侧的电极之间施加RF信号产生的静电电容根据静电吸引而导致的光束部分的变形而连续变化。 梁部包括包括上驱动电极的内周部分，包括上驱动电极的外周部分和被内周部分和外周部分夹在中间的梯子部分。 梁部分具有由梯部减小的横截面积。
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公开(公告)号：US08610516B2
公开(公告)日：2013-12-17
申请号：US12547633
申请日：2009-08-26
申请人： Keiichi Umeda
发明人： Keiichi Umeda
CPC分类号： H03H9/173 , H03H9/0095 , H03H9/0211 , H03H9/02118 , H03H9/132 , H03H9/174 , H03H9/175 , H03H9/564 , H03H9/568
摘要： A piezoelectric thin-film filter reduces insertion loss and deterioration of steepness of a shoulder characteristic and reduces the ripple in the passband. In a first vibration portion, a piezoelectric thin film is disposed between a pair of electrodes along one main surface of a substrate. In a second vibration portion, the piezoelectric thin film is disposed between a pair of electrodes along the one main surface of the substrate. The vibration portions are both acoustically isolated from the substrate. In the first resonator, an additional film is disposed outside the electrode constituting half or more the overall length of the perimeter of the first vibration portion that is in contact with the electrode when seen from a thickness direction. In the second resonator, the external shape of the vibration portion when seen from a thickness direction is a polygon, and each side of the polygon is not parallel with any of the other sides thereof.
摘要翻译： 压电薄膜滤波器减小了插入损耗和肩部特性的陡度的劣化，并且减小了通带中的纹波。 在第一振动部分中，压电薄膜沿着基板的一个主表面设置在一对电极之间。 在第二振动部分中，压电薄膜沿着基板的一个主表面设置在一对电极之间。 振动部分与基板隔声隔离。 在第一谐振器中，当从厚度方向观察时，另外的膜设置在电极的外部，构成与电极接触的第一振动部分的周边的总长度的一半以上。 在第二谐振器中，从厚度方向观察时的振动部的外形为多边形，多边形的各侧与其任一侧不平行。
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公开(公告)号：US07868519B2
公开(公告)日：2011-01-11
申请号：US12714597
申请日：2010-03-01
申请人： Keiichi Umeda
发明人： Keiichi Umeda
CPC分类号： H03H9/175 , H03H3/02 , H03H9/02133
摘要： A piezoelectric resonator that achieves stable quality and improved resonance characteristics includes an acoustic reflector portion disposed between a substrate and a vibration portion, which includes a piezoelectric thin film sandwiched between a pair of electrodes, and a plurality of low acoustic impedance layers made of a material having relatively low acoustic impedance and a plurality of high acoustic impedance layers formed made of a material having relatively high acoustic impedance, the acoustic impedance layers being disposed alternately, and adjustment layers, which are disposed between the high acoustic impedance layers and the low acoustic impedance layers on the substrate sides of the high acoustic impedance layers and which have an acoustic impedance value intermediate between that of the high acoustic impedance layers and that of the low acoustic impedance layers. The low acoustic impedance layers and the high acoustic impedance layers have compressive stresses and the adjustment layers have a tensile stress.
摘要翻译： 实现稳定质量和改善的谐振特性的压电谐振器包括设置在基板和振动部分之间的声反射器部分，其包括夹在一对电极之间的压电薄膜和由材料制成的多个低声阻抗层 具有相对低的声阻抗和由具有较高声阻抗的材料形成的多个高声阻抗层，声阻抗层交替布置，调节层设置在高声阻抗层和低声阻抗之间 在高声阻抗层的衬底侧上的层，并且其声阻抗值介于高声阻抗层和低声阻抗层的声阻抗值之间。 低声阻抗层和高声阻抗层具有压缩应力，调整层具有拉伸应力。
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公开(公告)号：US07649304B2
公开(公告)日：2010-01-19
申请号：US12211865
申请日：2008-09-17
申请人： Keiichi Umeda , Takashi Miyake
发明人： Keiichi Umeda , Takashi Miyake
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02118 , H03H9/173 , H03H2003/0428 , H03H2003/0442 , H03H2003/0471
摘要： A piezoelectric resonator includes a laminated thin film having a first thin film portion supported by a substrate and a second thin film portion spaced apart from a first main surface of the substrate and acoustically isolated from the substrate. The second thin film portion of the laminated thin film includes a piezoelectric thin film, a first electrode disposed on the upper surface of the piezoelectric thin film, and a second electrode disposed on the lower surface of the piezoelectric thin film and being larger and thicker than the first electrode. The piezoelectric resonator further includes a mass adding film disposed around the first electrode and on at least one portion of a region extending outward from the periphery of a piezoelectric vibrating portion at which the first and second electrodes overlap each other with the piezoelectric thin film disposed therebetween. The second electrode arranged so as to extend beyond the piezoelectric vibrating portion to a region at which the mass adding film is disposed.
摘要翻译： 压电谐振器包括具有由衬底支撑的第一薄膜部分和与衬底的第一主表面间隔开并与衬底隔离的第二薄膜部分的叠层薄膜。 叠层薄膜的第二薄膜部分包括压电薄膜，设置在压电薄膜的上表面上的第一电极和设置在压电薄膜的下表面上的第二电极， 第一个电极。 压电谐振器还包括设置在第一电极周围的质量添加膜和在第一和第二电极彼此重叠的压电振动部分的外围向外延伸的区域的至少一部分，其中压电薄膜位于它们之间 。 所述第二电极被配置为延伸超过所述压电振动部分至配置所述质量添加膜的区域。
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公开(公告)号：US07276836B2
公开(公告)日：2007-10-02
申请号：US11295444
申请日：2005-12-07
申请人： Keiichi Umeda , Osamu Nakagawara
发明人： Keiichi Umeda , Osamu Nakagawara
IPC分类号： H01L41/047 , H01L41/083 , H03H9/24
CPC分类号： H03H9/172 , H03H3/04 , H03H9/02149 , H03H9/131 , Y10T29/42
摘要： A piezoelectric thin-film resonator includes a first excitation electrode and a second excitation electrode, the first excitation electrode being disposed opposite the second excitation electrode; a piezoelectric thin film disposed between the first excitation electrode and the second excitation electrode; and a substrate supporting the first excitation electrode, the substrate being composed of a LiTaO3 single crystal or a LiNbO3 single crystal, the first excitation electrode including an acoustic reflecting layer, the acoustic reflecting layer containing (a) at least one epitaxially grown first sublayer being composed of a conducting material and having a relatively high acoustic impedance; and (b) at least one epitaxially grown second sublayer being composed of another conducting material and having a relatively low acoustic impedance.
摘要翻译： 压电薄膜谐振器包括第一激励电极和第二激励电极，第一激励电极与第二激励电极相对设置; 设置在所述第一激励电极和所述第二激励电极之间的压电薄膜; 以及支撑所述第一激发电极的基板，所述基板由LiTaO 3单晶或LiNbO 3 N 3单晶构成，所述第一激发电极包括声反射层， 所述声反射层包含（a）由导电材料构成且具有较高声阻抗的至少一个外延生长的第一子层; 和（b）至少一个外延生长的第二子层，由另一个导电材料组成并具有较低的声阻抗。
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