摘要:
A piezoelectric resonator includes a laminated thin film having a first thin film portion supported by a substrate and a second thin film portion spaced apart from a first main surface of the substrate and acoustically isolated from the substrate. The second thin film portion of the laminated thin film includes a piezoelectric thin film, a first electrode disposed on the upper surface of the piezoelectric thin film, and a second electrode disposed on the lower surface of the piezoelectric thin film and being larger and thicker than the first electrode. The piezoelectric resonator further includes a mass adding film disposed around the first electrode and on at least one portion of a region extending outward from the periphery of a piezoelectric vibrating portion at which the first and second electrodes overlap each other with the piezoelectric thin film disposed therebetween. The second electrode arranged so as to extend beyond the piezoelectric vibrating portion to a region at which the mass adding film is disposed.
摘要:
A duplexer includes a transmitting filter including serial resonators and parallel resonators connected in a ladder configuration, and a receiving filter. A resonator of the serial resonators and the parallel resonators in the transmitting filter that is arranged closest to a common terminal of the transmitting filter and the transmitting filter includes a surface acoustic wave resonator, and at least one resonator excluding the resonator that is arranged closest to the common terminal includes a film bulk acoustic wave resonator.
摘要:
A variable capacitance device includes a substrate, a beam portion, lower drive electrodes and upper drive electrodes. The beam portion is made of an insulating material and is connected to the substrate via an anchor portion. In the lower drive electrode and the upper drive electrode, electrostatic attraction generated by the application of a DC voltage continuously changes. In the lower drive electrodes and the upper drive electrode, electrostatic capacitance generated by the application of an RF signal between the electrodes on both sides continuously changes in accordance with the deformation of the beam portion due to the electrostatic attraction. The beam portion includes an inner circumferential portion including the upper drive electrode, an outer circumferential portion including the upper drive electrode, and ladder portions sandwiched by the inner circumferential portion and the outer circumferential portion. The beam portion has a cross-sectional area that is reduced by the ladder portions.
摘要:
A piezoelectric thin-film filter reduces insertion loss and deterioration of steepness of a shoulder characteristic and reduces the ripple in the passband. In a first vibration portion, a piezoelectric thin film is disposed between a pair of electrodes along one main surface of a substrate. In a second vibration portion, the piezoelectric thin film is disposed between a pair of electrodes along the one main surface of the substrate. The vibration portions are both acoustically isolated from the substrate. In the first resonator, an additional film is disposed outside the electrode constituting half or more the overall length of the perimeter of the first vibration portion that is in contact with the electrode when seen from a thickness direction. In the second resonator, the external shape of the vibration portion when seen from a thickness direction is a polygon, and each side of the polygon is not parallel with any of the other sides thereof.
摘要:
A piezoelectric resonator that achieves stable quality and improved resonance characteristics includes an acoustic reflector portion disposed between a substrate and a vibration portion, which includes a piezoelectric thin film sandwiched between a pair of electrodes, and a plurality of low acoustic impedance layers made of a material having relatively low acoustic impedance and a plurality of high acoustic impedance layers formed made of a material having relatively high acoustic impedance, the acoustic impedance layers being disposed alternately, and adjustment layers, which are disposed between the high acoustic impedance layers and the low acoustic impedance layers on the substrate sides of the high acoustic impedance layers and which have an acoustic impedance value intermediate between that of the high acoustic impedance layers and that of the low acoustic impedance layers. The low acoustic impedance layers and the high acoustic impedance layers have compressive stresses and the adjustment layers have a tensile stress.
摘要:
In a piezoelectric resonator, a portion of a thin film unit is supported by a substrate. A portion of the thin film unit acoustically isolated from the substrate includes a) a vibration unit and b) an additional film. The vibration unit includes a piezoelectric film sandwiched between a pair of electrodes. The piezoelectric film is overlapped with the pair of electrodes in plan view. The additional film is disposed on one of the piezoelectric film and the electrodes so as to extend along at least a portion of the periphery of the vibration unit. When x (MN·second/m3) denotes an acoustic impedance of the additional film defined by the square root of the product of the density and Young's modulus, A denotes the product of the density and the thickness of the additional film, B denotes the product of the densities and the thicknesses of the electrodes, and y=A/B, the following conditional expressions are satisfied: In the range of 9.0≦x
摘要翻译:在压电谐振器中,薄膜单元的一部分被基板支撑。 从衬底声学隔离的薄膜单元的一部分包括a)振动单元和b)附加膜。 振动单元包括夹在一对电极之间的压电薄膜。 压电膜在平面图中与该对电极重叠。 附加膜设置在压电膜和电极中的一个上,以沿着振动单元的周边的至少一部分延伸。 当x(MN.second / m3)表示由密度和杨氏模量的乘积的平方根定义的附加膜的声阻抗时,A表示附加膜的密度和厚度的乘积,B表示 电极的密度和厚度的乘积以及y = A / B,满足以下条件表达式:<?in-line-formula description =“In-line formula”end =“lead”?> 9.0 <= x <44.0,0.0092.x + 0.88 <= y <0.067.x + 0.60(1a)<?在线公式描述=“在线公式”end =“tail”?> <?in -line-formula description =“In-line Formulas”end =“lead”?>在44.0 <= x <79.0,-0.0035.x + 1.45 <= y <0.015.x + 2.9(1b)的范围内。 ?in-line-formula description =“In-line Formulas”end =“tail”?>
摘要:
Providing is a piezoelectric thin-film filter including resonators connected in a lattice pattern, which can achieve large attenuation at frequencies away from a passband and improve steepness near two ends of the passband without involving an additional special step. Second resonators C—2 or first and third resonators C—1 and Cx—1 connected in parallel form series-arm resonators or parallel-arm resonators C—1 connected in a lattice pattern. The capacitance of each second resonator C—2 is larger than the capacitance of each first resonator C—1. The capacitance of each third resonator Cx—1 is substantially equal to the difference between the capacitance of the second resonator C—2 and the capacitance of the first resonator C—1. The resonant frequency of the first resonator C—1 higher than the resonant frequency of the second resonator C—2. The anti-resonant frequency of the third resonator Cx—1 is higher than the resonant frequency of the second resonator C—2 and lower than the resonant frequency of the first resonator C—1.
摘要:
A piezoelectric thin-film resonator includes a first excitation electrode and a second excitation electrode, the first excitation electrode being disposed opposite the second excitation electrode; a piezoelectric thin film disposed between the first excitation electrode and the second excitation electrode; and a substrate supporting the first excitation electrode, the substrate being composed of a LiTaO3 single crystal or a LiNbO3 single crystal, the first excitation electrode including an acoustic reflecting layer, the acoustic reflecting layer containing (a) at least one epitaxially grown first sublayer being composed of a conducting material and having a relatively high acoustic impedance; and (b) at least one epitaxially grown second sublayer being composed of another conducting material and having a relatively low acoustic impedance.
摘要翻译:压电薄膜谐振器包括第一激励电极和第二激励电极,第一激励电极与第二激励电极相对设置; 设置在所述第一激励电极和所述第二激励电极之间的压电薄膜; 以及支撑所述第一激发电极的基板,所述基板由LiTaO 3单晶或LiNbO 3 N 3单晶构成,所述第一激发电极包括声反射层, 所述声反射层包含(a)由导电材料构成且具有较高声阻抗的至少一个外延生长的第一子层; 和(b)至少一个外延生长的第二子层,由另一个导电材料组成并具有较低的声阻抗。
摘要:
A piezoelectric resonator includes a substrate and a thin-film section. The thin-film section includes a first thin-film section supported by the substrate, and an acoustically-isolated second thin-film section which is separated from the substrate. In the second thin-film section, first and second electrodes are arranged on the respective main surfaces of a piezoelectric film, and a vibration section is provided at an area where the first and the second electrodes overlap each other on the second thin-film section when viewed through in the film-thickness direction. The thin-film section further includes a heat-radiating film which is in contact with peripheral edges of at least the first electrode among the first and second electrodes defining portions of a periphery of the vibration section, and which extends from the peripheral edges to the first thin-film section when viewed through in the film-thickness direction.
摘要:
A thin-film piezoelectric resonator having a thin-film portion with a piezoelectric thin film disposed between a pair of opposing electrodes, an insulating layer formed on one of the pair of electrodes of the thin-film portion, and a substrate supporting the other electrode of the thin-film portion. The thin-film portion and the insulating layer together vibrate in at least one mode of second and higher harmonic modes, and an antinode in the at least one mode of the second and higher harmonic modes is located in the insulating layer.