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    Oxidation metod
    1.
    发明授权
    Oxidation metod 失效
    氧化组合

    公开(公告)号：US5234501A

    公开(公告)日：1993-08-10

    申请号：US825422

    申请日：1992-01-24

    申请人： Ken Nakao ,  Sadao Maruchi ,  Yoshio Sakamoto

    发明人： Ken Nakao ,  Sadao Maruchi ,  Yoshio Sakamoto

    IPC分类号： C30B33/00 ,  H01L21/00

    CPC分类号： H01L21/67115 ,  C30B33/005

    摘要： The invention provides an oxidation method which utilizes a processing tube, a combustion chamber connected to the processing tube, inner and outer coaxial guide tubes connected to the combustion chamber, and an auxiliary combustion chamber connected to the combustion chamber, which includes the steps of placing a plurality of objects at predetermined intervals in the processing tube; generating steam in the combustion chamber by combustion of a mixture of oxygen and hydrogen gases and supplying the steam to the processing tube wherein the steam is generated by individually introducing oxygen gas and hydrogen gas into the combustion chamber through the outer and inner coaxial guide tubes and by heating the hydrogen gas in the inner guide tube or both the inner guide tube and the auxiliary combustion chamber such that ignition of the oxygen and hydrogen gases occurs when the gases come into contact with each other; and preventing a flame generated by the ignition of the gases from reaching an interior surface portion of at least one of the auxiliary combustion chamber and the combined chamber.

    摘要翻译： 本发明提供了一种利用处理管，连接到处理管的燃烧室，连接到燃烧室的内部和外部同轴导管以及连接到燃烧室的辅助燃烧室的氧化方法，其包括以下步骤： 处理管中的预定间隔的多个物体; 通过燃烧氧气和氢气的混合物而在燃烧室中产生蒸气，并将蒸汽供给到处理管中，其中蒸汽是通过外部和内部同轴引导管将氧气和氢气单独引入燃烧室而产生的， 通过加热内导管或内引导管和辅助燃烧室两者中的氢气，使得当气体彼此接触时，发生氧气和氢气的点燃; 并且防止由气体点燃产生的火焰到达辅助燃烧室和组合室中的至少一个的内表面部分。

    HEAT TREATMENT DEVICE
    2.
    发明申请
    HEAT TREATMENT DEVICE 审中-公开
    热处理装置

    公开(公告)号：US20140174364A1

    公开(公告)日：2014-06-26

    申请号：US14236955

    申请日：2012-07-23

    申请人： Ken Nakao ,  Eisuke Morisaki

    发明人： Ken Nakao ,  Eisuke Morisaki

    IPC分类号： C23C16/46

    CPC分类号： C23C16/46 ,  C23C16/4588 ,  H01L21/67109 ,  H01L21/67115

    摘要： A heat treatment device includes: a processing container that accommodates a plurality of substrates to be subjected to heat treatment; a substrate holding member that holds the plurality of substrates; an induction heating coil that forms an induction magnetic field inside the processing container; a high frequency power supply that applies a high frequency electric power to the induction heating coil; a gas supply mechanism that supplies a processing gas to the inside of the processing container; an exhaust mechanism that exhausts the inside of the processing container; and an induction heating element provided between the induction heating coil and the substrate holding member to enclose the substrate holding member inside the treatment container. The induction heating element is heated by an induction electric current formed by the induction magnetic field, and the substrates are heated by radiation heat from the induction heating element. The flow of the inductive electric current to the substrate is blocked by the induction heating element.

    摘要翻译： 热处理装置包括：容纳要进行热处理的多个基板的处理容器; 保持所述多个基板的基板保持部件; 感应加热线圈，其在处理容器内部形成感应磁场; 向感应加热线圈施加高频电力的高频电源; 气体供给机构，其向处理容器的内部供给处理气体; 排出处理容器内部的排气机构; 以及感应加热元件，其设置在所述感应加热线圈和所述基板保持部件之间，以将所述基板保持部件包围在所述处理容器内。 感应加热元件由感应磁场形成的感应电流加热，并且基板被来自感应加热元件的辐射热加热。 感应电流流向基板被感应加热元件阻挡。

    GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS
    3.
    发明申请
    GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS 有权
    用于半导体制造设备的气体供应系统

    公开(公告)号：US20080251018A1

    公开(公告)日：2008-10-16

    申请号：US12061982

    申请日：2008-04-03

    申请人： Shuji MORIYA ,  Ken Nakao

    发明人： Shuji MORIYA ,  Ken Nakao

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4402 ,  C23C14/564 ,  Y10S55/15

    摘要： A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.

    摘要翻译： 根据本发明的气体供给系统包括：气体过滤器，设置在气体供给流路中，通过该气体供给流路将气体供给到半导体制造装置，并且配置在气体供给流路中的金属成分去除器相对于气体过滤器下游， 其通过液化挥发性金属成分除去流过气体供给流路的气体中所含的挥发性金属成分。 气体供给系统中采用的结构防止了由气体供给流路供给腐蚀性气体而将不能通过气体过滤器排出的挥发性金属成分进入半导体制造装置。

    Gas supply system, gas supply method, method of cleaning thin film forming apparatus, thin film forming method and thin film forming apparatus
    4.
    发明申请
    Gas supply system, gas supply method, method of cleaning thin film forming apparatus, thin film forming method and thin film forming apparatus 审中-公开
    气体供给系统，气体供给方法，清洗薄膜形成装置的方法，薄膜形成方法和薄膜形成装置

    公开(公告)号：US20080105194A1

    公开(公告)日：2008-05-08

    申请号：US11907409

    申请日：2007-10-11

    申请人： Ken Nakao ,  Hitoshi Kato ,  Tsuneyuki Okabe ,  Mitsuhiro Okada ,  Manabu Honma ,  Tomoki Haneishi

    发明人： Ken Nakao ,  Hitoshi Kato ,  Tsuneyuki Okabe ,  Mitsuhiro Okada ,  Manabu Honma ,  Tomoki Haneishi

    IPC分类号： C23C22/00 ,  C23C16/455 ,  B08B9/027

    CPC分类号： C23C16/4405 ,  B08B7/00 ,  B08B9/00 ,  B08B9/027 ,  C23C16/455

    摘要： A thin film forming apparatus 1 comprises a reaction chamber 2, and an exhaust pipe 5 connected with the reaction chamber 2. A fluorine introducing pipe 17c and a hydrogen introducing pipe 17d are connected with the reaction chamber 2, in order to supply a cleaning gas containing fluorine gas and hydrogen gas into the reaction chamber 2 or into the exhaust pipe 5. The hydrogen introducing pipe 17d includes an inner fluid passage 174 and an outer fluid passage 175 formed to cover around the inner fluid passage 174. The hydrogen gas is supplied through the inner fluid passage 174, while nitrogen gas is supplied through the outer fluid passage 175. Thus, the hydrogen gas to be fed through the inner fluid passage can be supplied from the hydrogen introducing pipe 17d, while being covered with the nitrogen gas.

    摘要翻译： 薄膜形成装置1包括反应室2和与反应室2连接的排气管5。 将氟导入管17c和氢引入管17d与反应室2连接，以将含有氟气和氢气的清洁气体供应到反应室2或排气管5中。 氢引入管17d包括形成为覆盖内部流体通道174周围的内部流体通道174和外部流体通道175。 通过内部流体通道174供应氢气，同时通过外部流体通道175供应氮气。 因此，能够从氢气导入管17d供给通过内部流路的氢气被氮气覆盖。

    Heat treatment apparatus
    5.
    发明申请
    Heat treatment apparatus 有权
    热处理设备

    公开(公告)号：US20060021582A1

    公开(公告)日：2006-02-02

    申请号：US10528704

    申请日：2003-08-29

    申请人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    发明人： Takanori Saito ,  Kenichi Yamaga ,  Ken Nakao

    IPC分类号： C23C16/00

    CPC分类号： H01L21/67109

    摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.

    摘要翻译： 本发明是一种热处理单元，包括：上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部，形成在反应管的上部，气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元，用于加热由要处理的基板支撑构件支撑的待处理基板。 所述加热单元具有：设置在所述反应管周围的第一加热部，配置在所述排气单元连接部周围的第二加热部，配置在所述反应管的上部的第三加热部， 反应管的下部，以及配置在被处理基板的支撑部件的下方的第五加热部。

    Dry air-supplying apparatus and treating apparatus
    6.
    发明申请
    Dry air-supplying apparatus and treating apparatus 失效
    干燥供气装置和处理装置

    公开(公告)号：US20050246918A1

    公开(公告)日：2005-11-10

    申请号：US10528230

    申请日：2003-09-19

    申请人： Takashi Tanahashi ,  Takanobu Asano ,  Ken Nakao ,  Katsuhiro Yamashita

    发明人： Takashi Tanahashi ,  Takanobu Asano ,  Ken Nakao ,  Katsuhiro Yamashita

    IPC分类号： B01D53/06 ,  B01D53/26 ,  F24F3/14 ,  F26B21/06 ,  F26B3/00

    CPC分类号： F24F3/1423 ,  B01D53/06 ,  B01D53/261 ,  B01D2253/108 ,  B01D2253/25 ,  B01D2253/3425 ,  B01D2257/70 ,  B01D2257/80 ,  B01D2259/40007 ,  B01D2259/40052 ,  B01D2259/4009 ,  F24F2203/1032 ,  F24F2203/1056 ,  F24F2203/1072 ,  F24F2203/1084 ,  F24F2203/1088 ,  F24F2203/1096

    摘要： Two rotors 18a, 18b each housing a honeycomb structure 25 carrying an absorbent is driven for rotation by a common motor 19. Partitioning members 17 define an absorbing zone S and a recovery zone U in the rotor depending on the angular positional relationship between the partitioning members 17 and the rotor corresponding thereto. In the absorbing zone S, the absorbent removes moisture and organic matters from air passing therethrough. In the recovery zone U, recovery of the absorbent deteriorated by absorbing the moisture and the organic matters is preformed by using heated dry air. Air sucked from a transfer space 10 of the processing system sequentially passes through the absorbing zones of both the rotors via a circulation passage 20, thereafter returned to the transfer space. A part of clean dry air having passed through the absorbing zones of both the rotors is supplied into an exhaust passage 21, and is heated by a heater, and passes through the recovery zones of both the rotors.

    摘要翻译： 每个容纳携带吸收剂的蜂窝结构25的两个转子18a，18b被驱动以便由公共电动机19旋转。 分隔构件17根据分隔构件17和与其对应的转子之间的角度位置关系来限定转子中的吸收区域S和恢复区域U. 在吸收区S中，吸收剂从通过其的空气中除去水分和有机物质。 在回收区U中，通过吸收水分和有机物而劣化的吸收剂的回收通过使用加热的干燥空气来预处理。 从处理系统的传送空间10吸入的空气经由循环通道20依次通过两个转子的吸收区，然后返回到传送空间。 已经通过两个转子的吸收区的清洁干燥空气的一部分被供给到排气通道21中，并被加热器加热，并且通过两个转子的回收区。