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公开(公告)号：US20140174364A1
公开(公告)日：2014-06-26
申请号：US14236955
申请日：2012-07-23
申请人： Ken Nakao , Eisuke Morisaki
发明人： Ken Nakao , Eisuke Morisaki
IPC分类号： C23C16/46
CPC分类号： C23C16/46 , C23C16/4588 , H01L21/67109 , H01L21/67115
摘要： A heat treatment device includes: a processing container that accommodates a plurality of substrates to be subjected to heat treatment; a substrate holding member that holds the plurality of substrates; an induction heating coil that forms an induction magnetic field inside the processing container; a high frequency power supply that applies a high frequency electric power to the induction heating coil; a gas supply mechanism that supplies a processing gas to the inside of the processing container; an exhaust mechanism that exhausts the inside of the processing container; and an induction heating element provided between the induction heating coil and the substrate holding member to enclose the substrate holding member inside the treatment container. The induction heating element is heated by an induction electric current formed by the induction magnetic field, and the substrates are heated by radiation heat from the induction heating element. The flow of the inductive electric current to the substrate is blocked by the induction heating element.
摘要翻译： 热处理装置包括：容纳要进行热处理的多个基板的处理容器; 保持所述多个基板的基板保持部件; 感应加热线圈，其在处理容器内部形成感应磁场; 向感应加热线圈施加高频电力的高频电源; 气体供给机构，其向处理容器的内部供给处理气体; 排出处理容器内部的排气机构; 以及感应加热元件，其设置在所述感应加热线圈和所述基板保持部件之间，以将所述基板保持部件包围在所述处理容器内。 感应加热元件由感应磁场形成的感应电流加热，并且基板被来自感应加热元件的辐射热加热。 感应电流流向基板被感应加热元件阻挡。
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2.发明授权Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium 有权无定形碳膜，非晶碳膜，多层抗蚀剂膜，半导体器件的制造方法和计算机可读存储介质的形成方法公开(公告)号：US08409460B2
公开(公告)日：2013-04-02
申请号：US12528847
申请日：2008-02-21
申请人： Hiraku Ishikawa , Tadakazu Murai , Eisuke Morisaki
发明人： Hiraku Ishikawa , Tadakazu Murai , Eisuke Morisaki
CPC分类号： C23C16/26 , C23C16/5096 , H01L21/02527 , H01L21/02592 , H01L21/0262 , H01L21/31144
摘要： An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.
摘要翻译： 通过使用在处理室内安装有上部电极和下部电极的平行板型等离子体CVD装置进行无定形碳膜形成方法，该方法包括：在下部电极上设置基板; 向处理室供应一氧化碳和惰性气体; 通过向至少上述电极施加高频功率并产生等离子体来分解一氧化碳; 并在基底上沉积无定形碳。 上电极是碳电极是理想的。
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公开(公告)号：US20100047448A1
公开(公告)日：2010-02-25
申请号：US12521176
申请日：2007-11-29
CPC分类号： C23C16/4584 , C23C16/46 , H01L21/02529 , H01L21/0262 , H01L21/67115 , H01L29/66068
摘要： A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.
摘要翻译： 成膜装置包括：处理室，在该处理室内保持有真空空间，供给成膜气体;基板支撑单元，设置在处理室内部并支撑基板;加热器，由化合物 包含高熔点金属和碳的材料设置在处理室内部，并加热基板。
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公开(公告)号：US20100092666A1
公开(公告)日：2010-04-15
申请号：US12519933
申请日：2007-11-29
申请人： Eisuke Morisaki , Hirokatsu Kobayashi , Jun Yoshikawa , Ikuo Sawada , Tsunenobu Kimoto , Noriaki Kawamoto , Masatoshi Aketa
发明人： Eisuke Morisaki , Hirokatsu Kobayashi , Jun Yoshikawa , Ikuo Sawada , Tsunenobu Kimoto , Noriaki Kawamoto , Masatoshi Aketa
CPC分类号： C23C16/481 , C23C16/325 , C23C16/46 , C30B25/10 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/0262 , H01L21/67109 , H01L21/6719 , H01L21/67748 , H01L21/68764 , H01L21/68771 , H01L29/66068
摘要： A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.
摘要翻译： 所公开的膜沉积设备包括处理室，其内保持有减压空间; 气体供给部，其向所述处理室供给成膜气体; 基板保持部，其由以碳为主要成分的材料制成，并将基板保持在所述处理室中; 线圈，其布置在所述处理室的外部并感应加热所述基板保持部; 以及绝热构件，其覆盖所述基板保持部并被布置成与所述处理室分离，其中所述减压空间被分离成供给所述成膜气体的成膜气体供给空间和限定了所述隔热空间的成膜气体供给空间 在所述基板保持部和所述处理室之间，并且其中向所述绝热空间供给冷却介质。
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5.发明授权公开(公告)号：US06467952B2
公开(公告)日：2002-10-22
申请号：US09527239
申请日：2000-03-16
IPC分类号： G01K1500
CPC分类号： G01J5/522
摘要： A virtual blackbody radiation system (10) includes a light-emitting unit (1) including an LED driven by a fixed current, a light-receiving unit (2) including a sapphire rod, and an optical unit (3) including lenses (31, 32) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member (41)included in the optical unit (3)can be moved along the optical axis by a servomotor (42) included in a focus adjusting unit (4) for positional adjustment. The focus of convergent light relative to the light-receiving unit (2) can be adjusted by moving the lens (32) disposed in the cylindrical member (41) along the optical axis relative to the light-receiving unit (2). The intensity of the convergent light on the light-receiving unit (2) can be adjusted to the intensity of predetermined blackbody radiation. Thus, the virtual blackbody radiation system (10) is able to obtain light of a desired intensity without changing the driving current for driving a light source; consequently, the life time of the light source can be extended and the stability of radiation can be improved.
摘要翻译： 虚拟黑体辐射系统（10）包括包括由固定电流驱动的LED的发光单元（1），包括蓝宝石棒的光接收单元（2）和包括透镜（31）的光学单元（3） ，32），用于会聚由所述发光单元发射的光。 包括在光学单元（3）中的圆柱形构件（41）可以通过包括在聚焦调节单元（4）中的伺服电动机（42）沿光轴移动，用于位置调节。 可以通过相对于光接收单元（2）沿着光轴移动设置在圆柱形构件（41）中的透镜（32）来调节相对于光接收单元（2）的会聚光的聚焦。 光接收单元（2）上的会聚光的强度可以被调整到预定黑体辐射的强度。 因此，虚拟黑体辐射系统（10）能够在不改变用于驱动光源的驱动电流的情况下获得所需强度的光; 因此，可以延长光源的寿命并且可以提高辐射的稳定性。
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6.发明申请FORMING METHOD OF AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM 有权非晶碳膜，非晶碳膜，多层耐蚀膜，半导体器件的制造方法和计算机可读存储介质的形成方法公开(公告)号：US20100105213A1
公开(公告)日：2010-04-29
申请号：US12528847
申请日：2008-02-21
申请人： Hiraku Ishikawa , Tadakazu Murai , Eisuke Morisaki
发明人： Hiraku Ishikawa , Tadakazu Murai , Eisuke Morisaki
IPC分类号： H01L21/302 , H01L49/02 , C23C16/26 , G03F7/00
CPC分类号： C23C16/26 , C23C16/5096 , H01L21/02527 , H01L21/02592 , H01L21/0262 , H01L21/31144
摘要： An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.
摘要翻译： 通过使用在处理室内安装有上部电极和下部电极的平行板型等离子体CVD装置进行无定形碳膜形成方法，该方法包括：在下部电极上设置基板; 向处理室供应一氧化碳和惰性气体; 通过向至少上述电极施加高频功率并产生等离子体来分解一氧化碳; 并在基底上沉积无定形碳。 上电极是碳电极是理想的。
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公开(公告)号：US20100015359A1
公开(公告)日：2010-01-21
申请号：US12521179
申请日：2007-11-29
摘要： A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.
摘要翻译： 一种成膜装置，包括：处理室，其内部具有用作提供成膜气体的真空空间的空间; 基板支撑单元，其设置在真空空间中并支撑基板; 线圈，其感应加热所述基板支撑单元，从而从所述基板上的所述成膜气体形成膜，并且被划分为区域; 以及线圈控制单元，其逐个区域地控制线圈。
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公开(公告)号：US06473993B1
公开(公告)日：2002-11-05
申请号：US09537768
申请日：2000-03-30
申请人： Yasushi Yagi , Takeshi Sakuma , Wataru Okase , Masayuki Kitamura , Hironori Yagi , Eisuke Morisaki
发明人： Yasushi Yagi , Takeshi Sakuma , Wataru Okase , Masayuki Kitamura , Hironori Yagi , Eisuke Morisaki
IPC分类号： F26B304
CPC分类号： H01L21/67109
摘要： A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.
摘要翻译： 将半导体晶片安装在设置在处理室中的基座上，将晶片在约1000℃的温度下加热退火，并且从与晶片相对设置的气体供给装置供给气体。 当提高晶片的温度和/或当降低晶片的温度时，将表面内温度差限制在较小的值以抑制滑移的发生。 气体供给装置分别对应于晶片的中心部分和周边部分，以将不同流量的气体分别供应到中心部分和周边部分。 当提高晶片的温度时，例如以比晶片的温度更高（低于）的温度的气体以比将气体供应到周边部分的流量更大（下） 到中部。 当降低晶片的温度时，例如以比晶片的温度更高（更低）的温度的气体以比供应气体的周边部分低的（高）的单位面积的流量被供给 到中部。
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公开(公告)号：US08440270B2
公开(公告)日：2013-05-14
申请号：US12521179
申请日：2007-11-29
摘要： A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.
摘要翻译： 一种成膜装置，包括：处理室，其内部具有用作提供成膜气体的真空空间的空间; 基板支撑单元，其设置在真空空间中并支撑基板; 线圈，其感应加热所述基板支撑单元，从而从所述基板上的所述成膜气体形成膜，并且被划分为区域; 以及线圈控制单元，其逐个区域地控制线圈。
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公开(公告)号：US08328943B2
公开(公告)日：2012-12-11
申请号：US12521176
申请日：2007-11-29
IPC分类号： C23C16/00
CPC分类号： C23C16/4584 , C23C16/46 , H01L21/02529 , H01L21/0262 , H01L21/67115 , H01L29/66068
摘要： A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.
摘要翻译： 成膜装置包括：处理室，在该处理室内保持有真空空间，供给成膜气体;基板支撑单元，设置在处理室内部并支撑基板;加热器，由化合物 包含高熔点金属和碳的材料设置在处理室内部，并加热基板。
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