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公开(公告)号：US08397668B2
公开(公告)日：2013-03-19
申请号：US12398226
申请日：2009-03-05
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
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公开(公告)号：US07662232B2
公开(公告)日：2010-02-16
申请号：US11730962
申请日：2007-04-05
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。
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公开(公告)号：US20060236932A1
公开(公告)日：2006-10-26
申请号：US11201243
申请日：2005-08-11
CPC分类号： H01J37/32633 , H01J37/321 , H01J37/32623 , H01L21/67069
摘要： The invention provides a plasma processing apparatus capable of preventing the production of particle and preventing the influence of particle on the sample. The plasma processing apparatus comprises a vacuum chamber; process gas introducing means for introducing process gas into the vacuum chamber; means, coupled to a first RF power supply, for applying RF energy to the process gas introduced into the vacuum chamber to turn the process gas into plasma; a sample mounting electrode for mounting a sample on an upper surface thereof and holding the sample in the vacuum chamber; evacuation means for evacuating the process gas in the vacuum chamber; and plasma confining means, provided on a peripheral side of the mounting electrode in the vacuum chamber, for inflecting flow of the process gas caused by the evacuation means on a downstream side of a sample mounting surface of the mounting electrode to prevent plasma from diffusing downstream of the sample mounting surface.
摘要翻译： 本发明提供一种等离子体处理装置，其能够防止颗粒的产生并防止颗粒对样品的影响。 等离子体处理装置包括真空室; 处理气体引入装置，用于将处理气体引入真空室; 装置，耦合到第一RF电源，用于将RF能量施加到引入到真空室中的工艺气体，以将工艺气体转化为等离子体; 用于将样品安装在其上表面并将样品保持在真空室中的样品安装电极; 用于抽真空室中的处理气体的排气装置; 以及设置在真空室中的安装电极的周边侧的等离子体限制装置，用于使由排气装置产生的处理气体的流动在安装电极的样品安装表面的下游侧流动，以防止等离子体向下游扩散 的样品安装面。
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公开(公告)号：US08733282B2
公开(公告)日：2014-05-27
申请号：US13829676
申请日：2013-03-14
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。
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公开(公告)号：US20090194235A1
公开(公告)日：2009-08-06
申请号：US12398226
申请日：2009-03-05
IPC分类号： H01L21/306
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。
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公开(公告)号：US20070186972A1
公开(公告)日：2007-08-16
申请号：US11730962
申请日：2007-04-05
IPC分类号： B08B7/00 , G01L21/30 , H01L21/302
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of 02 or N2are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中至少两种具有不同组成比的O 2或N 2 N的处理气体被引入到处理室 通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。
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公开(公告)号：US20060016559A1
公开(公告)日：2006-01-26
申请号：US10911610
申请日：2004-08-05
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中具有不同组成比的O 2或N 2 2的至少两种处理气体被引入到处理室 通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。
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公开(公告)号：US08163652B2
公开(公告)日：2012-04-24
申请号：US12199028
申请日：2008-08-27
IPC分类号： H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32623 , H01J37/32706 , H01L21/31116 , H01L21/32136
摘要： A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.
摘要翻译： 使用等离子体的等离子体处理方法包括以下步骤：向线圈施加电流并将气体引入处理室，施加不产生等离子体的偏置功率，施加源功率以产生等离子体，使得等离子体密度分布高于外部 半导体晶片的周围，并且低于半导体晶片的中心，并且在半导体晶片的正上方形成具有正离子空间电荷的鞘层的形状，以从半导体晶片向上方凸出，从而消除 杂质颗粒捕获在具有正离子空间电荷的鞘层的边界上，直接位于半导体晶片上方，产生用于在与前述步骤的条件不同的条件下处理半导体晶片的等离子体。
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公开(公告)号：US20070056928A1
公开(公告)日：2007-03-15
申请号：US11336872
申请日：2006-01-23
IPC分类号： C23F1/00 , H01L21/00 , H01L21/461 , H01L21/302 , B44C1/22
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32623 , H01J37/32706 , H01L21/31116 , H01L21/32136
摘要： The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device having a plasma source capable of controlling plasma distribution, the shape of a sheath/bulk boundary above the wafer is controlled to a convexed shape when the plasma is turned on and off. By adding a step of applying a low source power and wafer bias power when the plasma is turned on and off in order to realize an out-high plasma distribution, it is possible to form a sheath that is thicker near the center of the wafer and thinner at the outer circumference portion thereof.
摘要翻译： 本发明提供一种用于制造半导体器件的等离子体处理方法和等离子体处理装置，其中附着在晶片上的异物颗粒的数量大大降低并且产率提高。 在具有能够控制等离子体分布的等离子体源的等离子体处理装置中，当等离子体被打开和关闭时，晶片上方的鞘/体边界的形状被控制为凸形。 为了实现高等离子体分布，通过添加等离子体开启和关闭时施加低源功率和晶片偏置功率的步骤，可以形成在晶片中心附近较厚的护套， 在其外圆周部分变薄。
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公开(公告)号：US07435687B2
公开(公告)日：2008-10-14
申请号：US11336872
申请日：2006-01-23
IPC分类号： H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32623 , H01J37/32706 , H01L21/31116 , H01L21/32136
摘要： The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device having a plasma source capable of controlling plasma distribution, the shape of a sheath/bulk boundary above the wafer is controlled to a convexed shape when the plasma is turned on and off. By adding a step of applying a low source power and wafer bias power when the plasma is turned on and off in order to realize an out-high plasma distribution, it is possible to form a sheath that is thicker near the center of the wafer and thinner at the outer circumference portion thereof.
摘要翻译： 本发明提供一种用于制造半导体器件的等离子体处理方法和等离子体处理装置，其中附着在晶片上的异物颗粒的数量大大降低并且产率提高。 在具有能够控制等离子体分布的等离子体源的等离子体处理装置中，当等离子体被打开和关闭时，晶片上方的鞘/体边界的形状被控制为凸形。 为了实现高等离子体分布，通过添加等离子体开启和关闭时施加低源功率和晶片偏置功率的步骤，可以形成在晶片中心附近较厚的护套， 在其外圆周部分变薄。
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