公开(公告)号：US5656936A

公开(公告)日：1997-08-12

申请号：US588329

申请日：1996-01-18

申请人： Kenichi Ao ,  Yoshimi Yoshino ,  Yasuaki Makino ,  Seiki Aoyama

发明人： Kenichi Ao ,  Yoshimi Yoshino ,  Yasuaki Makino ,  Seiki Aoyama

IPC分类号： G01B7/00 ,  G01D5/14 ,  G01D5/16 ,  G01D5/18 ,  G01D5/245 ,  G01P3/488 ,  G01R33/09 ,  G01B7/30

CPC分类号： G01D5/147 ,  G01P3/488

摘要： A displacement detector to obtain high-precision displacement detection with a small-sized, low-cost apparatus. A displacement detector comprises rectangular teeth formed on the outer circumference surface at a pitch of .lambda., a gearwheel made of a magnetic material, a magnet having a width larger than the pitch .lambda. of the gearwheel and so disposed that the N-pole thereof faces the teeth, and a pair of MREs constructed by alternately connecting the long strip portions and short strip portions thereof to have a zigzag shape. A uniform cyclic magnet field from the magnet to the gearwheel is formed within a gap between the gearwheel and the magnet. On the same phase of the magnet field are disposed the pair of MREs so that the directions of the long strip portions thereof and the directions of the magnetic force lines make angles of approximately 45.degree. and approximately 135.degree., respectively.

摘要翻译： 一种位移检测器，用小型，低成本的装置获得高精度位移检测。 位移检测器包括以λ的间距形成在外圆周表面上的矩形齿，由磁性材料制成的齿轮，具有大于齿轮的间距λ的宽度的磁体，并且被布置成使得其N极面向 齿，以及通过交替地将长带部分和短条带部分交替地连接以形成锯齿形的一对MRE。 在磁体和磁体之间的间隙内形成有从磁体到齿轮的均匀的循环磁场。 在磁场的相同相位上设置一对MRE，使得其长条状部分的方向和磁力线的方向分别为大约45度和大约135度的角度。

公开(公告)号：US5532910A

公开(公告)日：1996-07-02

申请号：US502580

申请日：1995-07-14

申请人： Yasutoshi Suzuki ,  Kenichi Ao ,  Yoshimi Yoshino ,  Ryoichi Narita ,  Hiroshi Omi

发明人： Yasutoshi Suzuki ,  Kenichi Ao ,  Yoshimi Yoshino ,  Ryoichi Narita ,  Hiroshi Omi

IPC分类号： C23C18/16 ,  H01G4/228 ,  H01L21/00 ,  H01L23/50 ,  H01L25/00 ,  H01L25/16 ,  H05K1/02 ,  H05K1/18 ,  H05K3/20 ,  H05K3/24 ,  H05K3/32 ,  H05K3/34 ,  H05K5/02

CPC分类号： H01L21/67121 ,  H01L25/16 ,  H05K3/321 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15747 ,  H01L2924/19041 ,  H01L2924/19106 ,  H05K1/0231 ,  H05K1/181 ,  H05K2201/0397 ,  H05K2201/10636 ,  H05K2201/10924 ,  H05K2203/0315 ,  H05K2203/1157 ,  H05K3/202 ,  H05K3/244 ,  Y02P70/611

摘要： A hybrid integrated circuit having a lead frame electrically connected to electronic components by means of a silver (Ag) paste, the hybrid integrated circuit comprising: an electroless-plated coating on the lead frame, the coating being free from an insulating surface oxide layer at least in a connection area in which the electrical connection is provided. A process of producing this hybrid integrated circuit comprises: a first step of electroless-plating a lead frame by using a phosphorus-containing reducing agent to form a coating on the lead frame; a second step of mounting electronic components on the lead frame and then electrically and mechanically connecting the former to the latter by means of an electroconductive paste; and a third step of maintaining the surface of the electroless-plated coating free from a phosphorus-containing oxide layer during the connecting operation.

摘要翻译： 一种混合集成电路，其具有通过银（Ag）糊电连接到电子部件的引线框架，所述混合集成电路包括：引线框架上的无电镀层，所述涂层不含绝缘表面氧化物层 至少在提供电连接的连接区域中。 制造该混合集成电路的方法包括：通过使用含磷还原剂对引线框架进行无电镀以在引线框架上形成涂层的第一步骤; 将电子部件安装在引线框架上，然后通过导电浆料将前者与后者电连接和机械连接的第二步骤; 以及在连接操作期间保持无电镀涂层的表面不含磷的氧化物层的第三步骤。

公开(公告)号：US5551586A

公开(公告)日：1996-09-03

申请号：US293966

申请日：1994-08-24

申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

IPC分类号： G01B7/00 ,  C23C28/00 ,  G01D5/14 ,  G01D5/16 ,  G01D5/18 ,  G01P3/487 ,  G01R33/09 ,  H01L27/22 ,  B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC分类号： G01D5/145 ,  B82Y25/00 ,  C23C28/00 ,  G01P3/487 ,  G01R33/093 ,  H01L27/22

摘要： A method of manufacturing a magneto-electric conversion device having a large rate of change of magnetic resistance and which is easy to position with respect to a magnetized surface, and a moving subject displacement detector using a magneto-electric conversion device manufactured by that method. A magnet which rotates together with the rotation of a drive gear is magnetized in alternately differing north and south poles, arranged in an equal sized section from a center portion thereof. An IC chip is positioned opposite to and at a distance from the magnetized surface of the magnet. Magneto-electric conversion devices are located on the IC chip. These magneto-electric conversion devices are formed by repeated alternate depositions, onto a surface of a single-crystal silicon substrate, of magnetic cobalt films having a thickness of several to several tens of angstroms and non-magnetic copper films having a thickness of several to several tens of angstroms.

摘要翻译： 一种制造磁阻变化率大且相对于磁化面容易定位的磁电转换装置的方法，以及使用该方法制造的磁电转换装置的移动体位移检测器。 与驱动齿轮的旋转一起旋转的磁体被磁化为交替不同的北极和南极，其中心部分以相同的尺寸设置。 IC芯片位于与磁体的磁化表面相对且距离磁化表面一定距离处。 磁电转换装置位于IC芯片上。 这些磁电转换装置通过重复交替沉积形成在单晶硅衬底的表面上，具有几个至几十埃厚度的磁性钴膜和非磁性铜膜，其厚度为几个至几十 几十埃。

公开(公告)号：US4835509A

公开(公告)日：1989-05-30

申请号：US076891

申请日：1987-07-23

申请人： Yoshimi Yoshino ,  Toshikazu Arasuna ,  Kenichi Ao ,  Katsuhiko Ariga ,  Toshikazu Matsushita ,  Ichiro Izawa

发明人： Yoshimi Yoshino ,  Toshikazu Arasuna ,  Kenichi Ao ,  Katsuhiko Ariga ,  Toshikazu Matsushita ,  Ichiro Izawa

IPC分类号： H01L43/08

CPC分类号： H01L43/08

摘要： A potentiometer includes a magnetoresistive element made of ferromagnetic material. A device applies a magnetic field to the magnetoresistive element. An absolute value of the magnetic field applied to the magnetoresistive element is equal to or greater than a saturation magnetic field with respect to the ferromagnetic magnetoresistive element. The magnetic field applying device is movable relative to the magnetoresistive element.

摘要翻译： 电位计包括由铁磁材料制成的磁阻元件。 器件将磁场施加到磁阻元件。 施加到磁阻元件的磁场的绝对值等于或大于相对于铁磁性磁阻元件的饱和磁场。 磁场施加装置可相对于磁阻元件移动。

公开(公告)号：US4754221A

公开(公告)日：1988-06-28

申请号：US807023

申请日：1985-12-09

申请人： Kenichi Ao ,  Yoshimi Yoshino

发明人： Kenichi Ao ,  Yoshimi Yoshino

IPC分类号： H01L43/08 ,  G01B7/00 ,  G01B7/30 ,  G01D5/14 ,  G01D5/245 ,  G01R33/09

CPC分类号： G01D5/145

摘要： When applying a bias field in the direction of the easy axis of magnetization of a signal field-detecting MR element assembly, a leakage magnetic field of a magnetic recording medium adapted to generate a signal field is applied as the desired bias field without using any exclusive bias field application device. The magnetic recording medium and the thin-film MR element assembly are arranged in a manner that they make a predetermined angle.

摘要翻译： 当在信号场检测MR元件组件的易磁化轴的方向上施加偏置场时，适用于产生信号场的磁记录介质的泄漏磁场被施加作为期望的偏置场，而不使用任何排他的 偏置场应用装置。 磁记录介质和薄膜MR元件组件以它们形成预定角度的方式布置。

公开(公告)号：US5262666A

公开(公告)日：1993-11-16

申请号：US831094

申请日：1992-02-10

申请人： Yoshimi Yoshino ,  Hideto Morimoto ,  Kenichi Ao

发明人： Yoshimi Yoshino ,  Hideto Morimoto ,  Kenichi Ao

IPC分类号： G01R33/09 ,  H01L27/02 ,  H01L27/22 ,  H01L29/82 ,  H01L29/96

CPC分类号： H01L27/0288 ,  G01R33/09 ,  H01L27/22

摘要： A semiconductor device including a substrate, a semiconductor element formed on the substrate, a terminal formed on the substrate and electrically connected to the semiconductor element, and a protective resistor formed on the substrate and electrically connected between the semiconductor element and the terminal. The resistor is composed of a ferromagnetic magnetoresistive material including Ni alloy. The device may be extended to detect magnetism by adding a magnetoresistive element composed of a ferromagnetic magnetoresistive material including the same Ni alloy as for the protective resistor and deposited at the same time. The device is superior in an anti-noise characteristic and is integrated. Furthermore, the device for detecting magnetism is formed with a lower cost.

摘要翻译： 一种半导体器件，包括基板，形成在基板上的半导体元件，形成在基板上并与半导体元件电连接的端子，以及形成在基板上并电连接在半导体元件和端子之间的保护电阻。 电阻由包含Ni合金的铁磁磁阻材料构成。 可以通过添加由包含与保护电阻器相同的Ni合金并且同时沉积的铁磁性磁阻材料构成的磁阻元件来扩展器件以检测磁性。 该器件具有优越的抗噪声特性并集成。 此外，以较低的成本形成用于检测磁性的装置。

公开(公告)号：US4937521A

公开(公告)日：1990-06-26

申请号：US216430

申请日：1988-07-07

申请人： Yoshimi Yoshino ,  Tatuya Kakehi ,  Hiroshi Sakurai ,  Kenichi Ao ,  Toshikazu Arasuna ,  Ichiroh Izawa

发明人： Yoshimi Yoshino ,  Tatuya Kakehi ,  Hiroshi Sakurai ,  Kenichi Ao ,  Toshikazu Arasuna ,  Ichiroh Izawa

IPC分类号： G01R15/20 ,  G01R17/10

CPC分类号： G01R15/205 ,  G01R17/105

摘要： A current detecting device comprises a substrate, a magnetism sensing member made of ferromagnetic magnetoresistance element, an insulating member, and a conducting member, and these members are formed by a photolithography technique such that the magnetism sensing member is electrically isolated from the conducting member by the insulating member. When a current flows into the conducting member, the magnetism sensing member responds to a magnetic field generated by the current. At this time, the resistance of the magnetism sensing member changes due to a magnetoresistance effect in accordance with the intensity of the current. Therefore, the current can be measured by detecting the resistance change. In such a current detecting device, there is no reactance component thereby achieving high sensitivity when detecting the current.

公开(公告)号：US5618738A

公开(公告)日：1997-04-08

申请号：US404147

申请日：1995-03-14

申请人： Kenichi Ao ,  Minoru Murata ,  Hiroki Noguchi ,  Yoshimi Yoshino ,  Hirofumi Uenoyama

发明人： Kenichi Ao ,  Minoru Murata ,  Hiroki Noguchi ,  Yoshimi Yoshino ,  Hirofumi Uenoyama

IPC分类号： G01R33/09 ,  H01F10/06 ,  H01F41/02 ,  H01F41/30 ,  H01F41/34 ,  H01L21/66 ,  H01L21/8222 ,  H01L27/06 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  H01F10/06 ,  H01F41/302 ,  H01F41/34 ,  H01L43/12

摘要： A method of manufacturing a magnetoresistance element that can accurately sort out truely defective products from apparently defective products due to the manufacturing processes. Manufacturing processes for MR elements includes a MR element formation process, a magnetic field application process and an electric inspection process. In the magnetic field process, the magnetic field application is limited to a range within 75.degree. to the longitudinal direction of a MR element pattern. By performing the magnetic field application process before the electric inspection process, the anisotropic magnetic field due to a shape magnetic anisotropy of the MR element can be aligned almost in a fixed direction, defective products due to the manufacturing processes can exactly be sorted out from the apparently defective products in the electric inspection process, so that the yield rate can be improved.

摘要翻译： 一种制造磁阻元件的方法，其可以由于制造工艺而精确地排除来自明显缺陷的产品的真实缺陷产品。 MR元件的制造过程包括MR元件形成处理，磁场施加处理和电检查过程。 在磁场处理中，磁场施加被限制在与MR元件图案的纵向方向成75°的范围内。 通过在电检测过程之前执行磁场施加处理，由于MR元件的形状磁各向异性而产生的各向异性磁场可以几乎在固定方向上排列，由于制造过程而导致的缺陷产物可以从 在电气检查过程中显然有缺陷的产品，从而可以提高产量。

公开(公告)号：US5471084A

公开(公告)日：1995-11-28

申请号：US94142

申请日：1993-07-30

申请人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

发明人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

IPC分类号： H01L43/08 ,  H01L27/22

CPC分类号： H01L43/08

摘要： This invention relates to a magnetoresistive element used for a magnetic sensor, etc. A ferromagnetic magnetoresistive element thin film is formed so as to be electrically connected to and so as to overlap the upper end portion of an aluminum wiring metal on a substrate. Through using a vacuum heat treatment with a temperature between 350.degree. and 450.degree. C., a Ni--Al-based alloy is formed at the overlapping portion. Therefore, even when a surface protection film of silicon nitride is subsequently formed by plasma CVD on the substrate, the alloy prevents the nitriding of the upper end portion of the aluminum wiring metal. Accordingly, the surface can be protected from moisture by the silicon nitride film without increasing the contact resistance between the magnetoresistive element thin film and the wiring metal. Instead of the Ni--Al-based alloy, other conductive metals such as TiW, TiN, Ti, Zr, or the like may be used. Also, the surface protection film may be a multi-layered film having a first film containing no nitrogen, such as a silicon oxide film, and a second film of silicon nitride film formed on the first film.

摘要翻译： PCT No.PCT / JP92 / 01581 Sec。 371日期：1993年7月30日 102（e）日期1993年7月30日PCT提交1992年12月3日PCT公布。 公开号WO93 / 11569 日本特许公报1993年6月10日。本发明涉及用于磁传感器等的磁阻元件。铁磁磁阻元件薄膜形成为与铝布线的上端部电连接并与其重叠 金属在基板上。 通过使用350〜450℃的真空热处理，在重叠部分形成Ni-Al系合金。 因此，即使在基板上随后通过等离子体CVD形成氮化硅的表面保护膜，合金也能防止铝布线金属的上端部的氮化。 因此，可以防止表面被氮化硅膜防止湿气，而不增加磁阻元件薄膜和布线金属之间的接触电阻。 可以使用TiW，TiN，Ti，Zr等其他导电性金属代替Ni-Al系合金。 此外，表面保护膜也可以是具有不含氮的第一膜的多层膜，例如氧化硅膜，以及形成在第一膜上的第二氮化硅膜。

公开(公告)号：US5005064A

公开(公告)日：1991-04-02

申请号：US233431

申请日：1988-08-18

申请人： Yoshimi Yoshino ,  Kenichi Ao ,  Ichiro Izawa ,  Toshikazu Arasuna

发明人： Yoshimi Yoshino ,  Kenichi Ao ,  Ichiro Izawa ,  Toshikazu Arasuna

IPC分类号： G01R33/09 ,  H01L27/22 ,  H01L43/08

CPC分类号： G01R33/09 ,  H01L27/22 ,  H01L43/08

摘要： According to this invention, a device for detecting magnetism comprises; a substrate, an interposed insulating layer containing impurities therein, formed on the substrate, and a ferromagnetic magnetoresistive element formed on the interposed layer, wherein at least a portion of the interposed layer on which the ferromagnetic magnetoresistive element is formed has a concentration of impurities of less than a predetermined value. Further, in the device of this invention, the surface of the layer interposed between the substrate and the ferromagnetic magnetoresistive element has a surface roughness of less than 120 and an angle between a contacting surface of a conductive wiring and the ferromagnetic magnetoresistive element and the surface of the interposed layer is less than 78 degrees. Therefore, a device wherein a deterioration of the quality film of the ferromagnetic magnetoresistive element can be avoided and a reduction of the ratio of the resistance variation of the ferromagnetic magnetoresistive element can be maintained at less than 10% can be obtained, and further, a device wherein the generation of noise can be effectively suppressed so that the device is highly sensitive to magnetism and has a high S/N ratio, and further, the breakdown ratio caused by wiring breakages is effectively reduced, can be obtained.