PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    光电转换装置及其制造方法

    公开(公告)号:US20100059804A1

    公开(公告)日:2010-03-11

    申请号:US12556193

    申请日:2009-09-09

    IPC分类号: H01L31/112 H01L31/18

    摘要: A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.

    摘要翻译: 光电转换装置包括放置在基板上的薄膜晶体管,连接到薄膜晶体管的漏极的光电二极管,包括上电极,下电极和放置在上下电极之间的光电转换层 电极,至少覆盖上电极的第一层间绝缘膜,位于第一层间绝缘膜的上层并覆盖薄膜晶体管和光电二极管的第二层间绝缘膜,以及与第 上电极通过设置在第一层间绝缘膜和第二层间绝缘膜中的接触孔。

    PHOTOSENSOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    PHOTOSENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    照相机及其制造方法

    公开(公告)号:US20100237250A1

    公开(公告)日:2010-09-23

    申请号:US12724878

    申请日:2010-03-16

    申请人: Masami HAYASHI

    发明人: Masami HAYASHI

    摘要: A photosensor includes a photodiode including a semiconductor layer. The semiconductor layer is made up of an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer, for example. The photosensor further includes a transparent electrode made of a transparent conductive film, and a nitrogen-containing semiconductor layer formed between the semiconductor layer and the transparent electrode.

    摘要翻译: 光传感器包括具有半导体层的光电二极管。 半导体层例如由n型半导体层,i型半导体层和p型半导体层构成。 光传感器还包括由透明导电膜制成的透明电极和形成在半导体层和透明电极之间的含氮半导体层。

    PHOTOELECTRIC CONVERSION APPARATUS, IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    PHOTOELECTRIC CONVERSION APPARATUS, IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF 有权
    光电转换装置,使用其的成像装置及其制造方法

    公开(公告)号:US20130161627A1

    公开(公告)日:2013-06-27

    申请号:US13707537

    申请日:2012-12-06

    IPC分类号: H01L27/146 H01L29/66

    摘要: A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.

    摘要翻译: 一种光电转换装置包括:有源矩阵型TFT阵列基板,光电转换元件和薄膜晶体管以矩阵形状布置在其上,其中光电转换元件通过经由第一层间绝缘开口的接触孔与漏电极连接 提供在薄膜晶体管上方的薄膜,其中数据线和偏置线通过经由第二层间绝缘开口的相应接触孔与源电极和光电转换元件连接,并且其中至少一部分光电转换元件 固定为具有与栅极线的延伸方向相邻的像素之间的正常像素不同的形状,并且在具有不同的像素的像素的晶体管中切断光电转换元件与数据线之间的电连接 形状。

    LIQUID CRYSTAL DISPLAY DEVICE
    4.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置

    公开(公告)号:US20120200799A1

    公开(公告)日:2012-08-09

    申请号:US13450849

    申请日:2012-04-19

    IPC分类号: G02F1/1339

    CPC分类号: G02F1/13394 G02F1/133555

    摘要: A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between both substrates over the gap retaining pad and over the pixel electrode.

    摘要翻译: 液晶显示装置具有包括透射像素电极和反射像素电极的像素电极。 液晶显示装置包括TFT阵列基板,相对基板,粘合两基板的密封材料,形成在TFT阵列基板上的有机膜,并且具有设置在像素电极下方的厚膜部分和设置在像素电极下方的薄膜部分 厚膜部分,形成在相对基板上并保持两个基板之间的基板间隙的柱状间隔件,以及形成在显示区域外部和密封材料内部的区域中的间隙保持焊盘,以根据 到像素电极上的衬底间隙。 柱形间隔件在间隙保持垫上方和像素电极之间保持两个基板之间的基板间隙。

    TRANSFLECTIVE TYPE LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    TRANSFLECTIVE TYPE LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    转移型液晶显示装置及其制造方法

    公开(公告)号:US20090141223A1

    公开(公告)日:2009-06-04

    申请号:US12277798

    申请日:2008-11-25

    申请人: Masami HAYASHI

    发明人: Masami HAYASHI

    IPC分类号: G02F1/1335 H01L21/02

    摘要: A method of manufacturing a transflective type liquid crystal display device includes forming an organic film having different film thicknesses on a passivation film covering a TFT, etching the passivation film to form a contact hole, etching a reflective electrode and a transmissive electrode formed on the organic film by using a resist pattern having different film thicknesses, removing, by ashing, a thin film portion of the resist pattern, and a thin film portion of the organic film exposed from the transmissive electrode to form an opening, etching the reflective electrode by using the resist pattern left after the removal of the thin film portion, and bonding substrates in such a manner that a sealing material in a shape of a frame is arranged in the opening of the organic film.

    摘要翻译: 半透射型液晶显示装置的制造方法包括在覆盖TFT的钝化膜上形成具有不同膜厚的有机膜,蚀刻钝化膜以形成接触孔,蚀刻形成在有机物上的反射电极和透射电极 通过使用具有不同膜厚度的抗蚀剂图案,通过灰化除去抗蚀剂图案的薄膜部分和从透射电极暴露的有机膜的薄膜部分以形成开口,通过使用来蚀刻反射电极 在去除薄膜部分之后残留的抗蚀剂图案,并且以使得在有机膜的开口中布置有框架形式的密封材料的方式接合基板。

    TRANSFLECTIVE TYPE LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    TRANSFLECTIVE TYPE LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    转移型液晶显示装置及其制造方法

    公开(公告)号:US20120001188A1

    公开(公告)日:2012-01-05

    申请号:US13232202

    申请日:2011-09-14

    申请人: Masami HAYASHI

    发明人: Masami HAYASHI

    IPC分类号: H01L33/08 H01L51/52

    摘要: A method of manufacturing a transflective type liquid crystal display device includes forming an organic film having different film thicknesses on a passivation film covering a TFT, etching the passivation film to form a contact hole, etching a reflective electrode and a transmissive electrode formed on the organic film by using a resist pattern having different film thicknesses, removing, by ashing, a thin film portion of the resist pattern, and a thin film portion of the organic film exposed from the transmissive electrode to form an opening, etching the reflective electrode by using the resist pattern left after the removal of the thin film portion, and bonding substrates in such a manner that a sealing material in a shape of a frame is arranged in the opening of the organic film.

    摘要翻译: 半透射型液晶显示装置的制造方法包括在覆盖TFT的钝化膜上形成具有不同膜厚的有机膜,蚀刻钝化膜以形成接触孔,蚀刻形成在有机物上的反射电极和透射电极 通过使用具有不同膜厚度的抗蚀剂图案,通过灰化除去抗蚀剂图案的薄膜部分和从透射电极暴露的有机膜的薄膜部分以形成开口,通过使用来蚀刻反射电极 在去除薄膜部分之后残留的抗蚀剂图案,并且以使得在有机膜的开口中布置有框架形式的密封材料的方式接合基板。

    PHOTOELECTRIC CONVERSION DEVICE AND ITS MANUFACTURING METHOD
    8.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND ITS MANUFACTURING METHOD 有权
    光电转换器件及其制造方法

    公开(公告)号:US20110127593A1

    公开(公告)日:2011-06-02

    申请号:US12939568

    申请日:2010-11-04

    申请人: Masami HAYASHI

    发明人: Masami HAYASHI

    IPC分类号: H01L31/0216 H01L31/18

    摘要: A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode electrically connected to the thin-film transistor, wherein the photo diode includes a lower electrode connected to a drain electrode of the thin-film transistor, a photoelectric conversion layer formed on the lower electrode, an upper electrode formed from a transparent conductive film on the photoelectric conversion layer, the upper electrode being formed so as to be contained within an upper surface of the photoelectric conversion layer as viewed from a top, and a protective film (compound layer or the like) formed so as to protect a part of an upper surface of the photoelectric conversion layer located outside the upper electrode.

    摘要翻译: 根据本发明的一个方面的光电转换装置包括形成在衬底上的薄膜晶体管和与薄膜晶体管电连接的光电二极管,其中光电二极管包括连接到漏电极的下电极 形成在所述下电极上的光电转换层,由所述光电转换层上的透明导电膜形成的上电极,所述上电极被形成为包含在所述光电转换层的上表面内 形成为保护位于上部电极外侧的光电转换层的上表面的一部分的保护膜(化合物层等)。