Liquid crystal display device
    1.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号:US08208103B2

    公开(公告)日:2012-06-26

    申请号:US12432320

    申请日:2009-04-29

    CPC分类号: G02F1/13394 G02F1/133555

    摘要: There is provided a liquid crystal display device having a pixel electrode including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds the both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between the both substrates over the gap retaining pad and over the pixel electrode.

    摘要翻译: 提供一种液晶显示装置,其具有包括透射像素电极和反射像素电极的像素电极。 液晶显示装置包括TFT阵列基板,相对基板,粘合两基板的密封材料,形成在TFT阵列基板上并具有设置在像素电极下方的厚膜部分的有机膜,以及薄膜部分 在厚膜部分外部,形成在相对基板上并保持两个基板之间的基板间隙的柱状间隔件,以及形成在显示区域外部和密封材料内部的区域中的间隙保持垫,以将显示区域外部的基板间隙调整 根据像素电极上的衬底间隙。 柱形间隔件在间隙保持垫上并在像素电极之上保持两个基板之间的衬底间隙。

    Liquid crystal display device
    2.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号:US08471987B2

    公开(公告)日:2013-06-25

    申请号:US13450849

    申请日:2012-04-19

    CPC分类号: G02F1/13394 G02F1/133555

    摘要: A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between both substrates over the gap retaining pad and over the pixel electrode.

    摘要翻译: 液晶显示装置具有包括透射像素电极和反射像素电极的像素电极。 液晶显示装置包括TFT阵列基板,相对基板,粘合两基板的密封材料,形成在TFT阵列基板上的有机膜,并且具有设置在像素电极下方的厚膜部分和设置在像素电极下方的薄膜部分 厚膜部分,形成在相对基板上并保持两个基板之间的基板间隙的柱状间隔件,以及形成在显示区域外部和密封材料内部的区域中的间隙保持焊盘,以根据 到像素电极上的衬底间隙。 柱形间隔件在间隙保持垫上方和像素电极之间保持两个基板之间的基板间隙。

    Image detector
    4.
    发明授权
    Image detector 有权
    图像检测器

    公开(公告)号:US08735886B2

    公开(公告)日:2014-05-27

    申请号:US13691383

    申请日:2012-11-30

    IPC分类号: H01L31/0248

    摘要: An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.

    摘要翻译: 图像检测器包括:具有像素区域的有源矩阵型TFT阵列基板,其中光电转换元件和薄膜晶体管以矩阵形状排列,数据线和偏置线; 转换层,其设置在TFT阵列基板上并将辐射转换成光; 以及覆盖所述转换层的导电盖,其中所述导电盖粘附在上层中的粘合区域中,所述粘合区域中的至少一个数据线和偏置线从像素区域延伸到每个区域 端子,并且其中通过至少两层构成的无机绝缘膜形成在数据线和偏置线中的至少一个和粘附区域之间。

    Photoelectric conversion apparatus, imaging apparatus using the same, and manufacturing method thereof
    5.
    发明授权
    Photoelectric conversion apparatus, imaging apparatus using the same, and manufacturing method thereof 有权
    光电转换装置,使用其的成像装置及其制造方法

    公开(公告)号:US08828808B2

    公开(公告)日:2014-09-09

    申请号:US13707537

    申请日:2012-12-06

    摘要: A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.

    摘要翻译: 一种光电转换装置包括:有源矩阵型TFT阵列基板,光电转换元件和薄膜晶体管以矩阵形状布置在其上,其中光电转换元件通过经由第一层间绝缘开口的接触孔与漏电极连接 提供在薄膜晶体管上方的薄膜,其中数据线和偏置线通过经由第二层间绝缘开口的相应接触孔与源电极和光电转换元件连接,并且其中至少一部分光电转换元件 固定为具有与栅极线的延伸方向相邻的像素之间的正常像素不同的形状,并且在具有不同的像素的像素的晶体管中切断光电转换元件与数据线之间的电连接 形状。

    Photoelectric conversion device and method of manufacturing the same
    8.
    发明授权
    Photoelectric conversion device and method of manufacturing the same 有权
    光电转换装置及其制造方法

    公开(公告)号:US08044445B2

    公开(公告)日:2011-10-25

    申请号:US12556193

    申请日:2009-09-09

    IPC分类号: H01L31/113

    摘要: A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.

    摘要翻译: 光电转换装置包括放置在基板上的薄膜晶体管,连接到薄膜晶体管的漏极的光电二极管,包括上电极,下电极和放置在上下电极之间的光电转换层 电极,至少覆盖上电极的第一层间绝缘膜,位于第一层间绝缘膜的上层并覆盖薄膜晶体管和光电二极管的第二层间绝缘膜,以及与第 上电极通过设置在第一层间绝缘膜和第二层间绝缘膜中的接触孔。

    PHOTO-SENSOR AND MANUFACTURING METHOD FOR PHOTO-SENSOR
    9.
    发明申请
    PHOTO-SENSOR AND MANUFACTURING METHOD FOR PHOTO-SENSOR 审中-公开
    照相传感器的照相传感器和制造方法

    公开(公告)号:US20090152563A1

    公开(公告)日:2009-06-18

    申请号:US12333454

    申请日:2008-12-12

    IPC分类号: H01L31/112 H01L31/18

    CPC分类号: H01L27/14609 H01L27/14692

    摘要: The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film.

    摘要翻译: 考虑到与非晶硅的粘合性,本发明防止源电极和漏电极断开。 根据本发明的光传感器是具有TFT阵列基板的光传感器,TFT阵列基板具有以阵列形式布置薄膜晶体管的元件区域,光传感器包括设置在薄膜上方的钝化膜 晶体管,并且其中形成接触孔;以及光电二极管,其通过接触孔连接到薄膜晶体管的漏电极,其中钝化膜和栅绝缘膜在元件外部的外围区域中被去除 区域,并且周边区域中的钝化膜的边缘形成在与基板的周边上的栅极绝缘膜的边缘或栅极绝缘膜的边缘的外侧相同的位置处。