公开(公告)号：US5041732A

公开(公告)日：1991-08-20

申请号：US482543

申请日：1990-02-21

申请人： Kenichi Saito ,  Hirofumi Morita ,  Nobuo Shimazu

发明人： Kenichi Saito ,  Hirofumi Morita ,  Nobuo Shimazu

IPC分类号： H01J27/26 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J37/141

CPC分类号： H01J37/073 ,  H01J37/06 ,  H01J2237/06316

摘要： In a charged particle beam generating apparatus, the emitter is so arranged that its distal end is disposed at a level below a peak of a distribution of a magnetic flux density. An inner diameter of a lower portion of a pole piece is smaller than an inner diameter of an upper portion of the pole piece. The peak of the magnetic flux density is disposed close to the lower end of the pole piece, and at the same time the magnetic field is prevented from extending downwardly beyond the lower end of the pole piece.

公开(公告)号：US5097204A

公开(公告)日：1992-03-17

申请号：US592560

申请日：1990-10-03

申请人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

发明人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

IPC分类号： G01Q30/02 ,  G01Q30/04 ,  G01Q80/00 ,  G01Q90/00 ,  G01R31/305

CPC分类号： G01R31/305

摘要： A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated includes leakage characteristics and a capacitance.

公开(公告)号：US06444374B1

公开(公告)日：2002-09-03

申请号：US09732931

申请日：2000-12-11

申请人： Nobuo Shimazu ,  Takao Utsumi

发明人： Nobuo Shimazu ,  Takao Utsumi

IPC分类号： G03F900

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  Y10S430/143

摘要： A method for manufacturing a mask which is used in an electron beam proximity exposure apparatus comprising an electron beam source which emits a collimated electron beam, the mask having an aperture which is arranged on a path of the electron beam, and a stage which holds and moves an object, wherein the mask is arranged in proximity to a surface of the object and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, the method comprises the steps of: dividing the mask into a plurality of partial areas, and forming a plurality of partial masks which have apertures with patterns identical with the plurality of partial areas, respectively; and manufacturing the mask by exposing the patterns of the plurality of partial masks on corresponding positions of a mask substrate in an electron beam proximity exposure method. Thus, the method of manufacturing the masks for the electron beam proximity exposure at reduced costs is accomplished.

摘要翻译： 一种用于电子束接近曝光设备的电子束接近曝光设备的制造方法，该电子束接近曝光设备包括发射准直电子束的电子束源，该掩模具有布置在电子束路径上的孔， 移动物体，其中掩模布置在物体的表面附近，并且与电子束通过孔径的物体的表面上对应于掩模的孔的图案暴露在物体的表面上，该方法包括步骤 将掩模分成多个部分区域，并分别形成具有与多个部分区域相同的图案的孔的多个部分掩模; 以及通过在电子束接近曝光方法中将多个部分掩模的图案暴露在掩模基板的相应位置上来制造掩模。 因此，实现了以降低的成本制造用于电子束接近曝光的掩模的方法。

公开(公告)号：US4980639A

公开(公告)日：1990-12-25

申请号：US166763

申请日：1988-03-03

申请人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

发明人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

IPC分类号： G01Q30/02 ,  G01Q30/04 ,  G01Q80/00 ,  G01Q90/00 ,  G01R31/305

CPC分类号： G01R31/305

摘要： A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated include leakage characteristics and a capacitance.

摘要翻译： 一种用于测试集成电子设备的方法和装置，其中将要测试的集成电子设备放置在样品台上。 用主充电光束照射集成电子设备的预定位置。 通过一次充电光束的辐射测量流过集成电子器件的衬底的衬底电流，然后根据从预定位置发射的二次电子非破坏性地测量用主充电光束照射的预定位置的电位。 根据衬底电流和预定位置电位来评估集成电子器件的功能。 要评估的功能包括泄漏特性和电容。

公开(公告)号：US4851768A

公开(公告)日：1989-07-25

申请号：US212047

申请日：1988-06-24

申请人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

发明人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

IPC分类号： H01L21/66 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q90/00 ,  G01R31/26 ,  G01R31/302 ,  G01R31/305 ,  G01R31/3183 ,  H01J37/28

CPC分类号： G01R31/305

摘要： In a characteristic test apparatus for an electronic device, a number of voltage supply beams are radiated onto predetermined irradiation positions of the electronic device placed on a sample table. In addition, a potential measuring beam is radiated onto a number of irradiation positions including the predetermined irradiation positions of the voltage supply beams. A secondary electron signal based on the potential measuring beam is detected to measure a potential. When the irradiation position of the potential measuring beam coincides with that of the voltage supply beam, the voltage supply beam is controlled to adjust a potential at the irradiation position to a set value by controlling, e.g., an acceleration power source for the voltage supply beam. When the irradiation position of the potential measuring beam is different from that of the voltage supply beam, a potential at this position is measured. Then, characteristics of the electronic device are calculated based on the obtained potentials at the respective irradiation positions.

摘要翻译： 在用于电子设备的特征测试装置中，多个电压供应光束照射到放置在样品台上的电子设备的预定照射位置上。 此外，将潜在的测量光束照射到包括电压供应光束的预定照射位置的多个照射位置。 检测基于电位测量光束的二次电子信号来测量电位。 当电位测量光束的照射位置与电压供应光束的照射位置一致时，电压供应光束被控制以通过控制例如电压源光束的加速度电源来将照射位置处的电位调整到设定值 。 当电位测量光束的照射位置与电压供应光束的照射位置不同时，测量该位置处的电位。 然后，基于在各个照射位置处获得的电位来计算电子设备的特性。

公开(公告)号：US4443703A

公开(公告)日：1984-04-17

申请号：US347719

申请日：1982-02-10

申请人： Nobuo Shimazu ,  Tsuneo Okubo ,  Norio Saitou ,  Susumu Ozasa

发明人： Nobuo Shimazu ,  Tsuneo Okubo ,  Norio Saitou ,  Susumu Ozasa

IPC分类号： H01J37/147 ,  H01J37/153 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027

CPC分类号： H01J37/147 ,  H01J37/304

摘要： A method and apparatus of deflection calibration for a charged particle beam exposure apparatus having an electromagnetic deflector and an electrostatic deflector both for deflecting a charged particle beam and a movable stage structure. The electromagnetic deflector is previously subjected to a calibration operation known per se. With a fiducial mark positioned in a predetermined location, the beam is deflected by the calibrated electromagnetic deflector instead of moving the stage structure, the beam is then deflected by the electrostatic deflector to detect the location of the fiducial mark, and deflection data are measured of the electrostatic deflection for the detection of the location of the fiducial mark. According to the present invention the calibration is performed in a short time without causing degradation of the precision of, e.g., lithography due to heat generated by movement of the stage structure.

摘要翻译： 一种具有用于偏转带电粒子束和可移动平台结构的电磁偏转器和静电偏转器的带电粒子束曝光装置的偏转校准方法和装置。 电磁偏转器预先经过本身已知的校准操作。 将基准标记定位在预定位置时，光束被校准的电磁偏转器偏转，而不是移动平台结构，然后光束被静电偏转器偏转以检测基准标记的位置，并且测量偏转数据 用于检测静电偏转的位置的基准标记。 根据本发明，在短时间内执行校准，而不会导致由于台架结构的移动产生的热量导致的光刻的精度的降低。

公开(公告)号：US06894295B2

公开(公告)日：2005-05-17

申请号：US09732928

申请日：2000-12-11

申请人： Nobuo Shimazu ,  Takao Utsumi

发明人： Nobuo Shimazu ,  Takao Utsumi

IPC分类号： G21K5/04 ,  G03F1/16 ,  G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/20

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0458 ,  H01J2237/31788

摘要： In an electron beam proximity exposure apparatus comprising an electron beam source, which emits a collimated electron beam, a mask substrate on which a plurality of masks with apertures are formed, a mask moving mechanism, which moves the mask substrate, and a stage, which holds and moves an object, the mask moving mechanism moves the mask substrate so that one of the plurality of masks is arranged on a path of the electron beam in proximity to a surface of the object, and a pattern corresponding to the aperture of the one of the plurality of masks is exposed on the surface of the object with the electron beam having passed through the aperture. Thus, the frequency of taking the mask out of the apparatus to exchange the mask is reduced, so that the throughput of the apparatus is improved.

摘要翻译： 在包括发射准直电子束的电子束源的电子束接近曝光装置中，形成有多个具有孔的掩模的掩模基板，移动掩模基板的掩模移动机构和台阶 保持和移动物体，掩模移动机构移动掩模基板，使得多个掩模中的一个掩模布置在接近物体表面的电子束的路径上，并且与该一个的孔的对应的图案 的多个掩模在电子束已通过孔的情况下暴露在物体的表面上。 因此，将掩模从装置中取出以交换掩模的频率减小，从而提高了装置的吞吐量。

公开(公告)号：US06727507B2

公开(公告)日：2004-04-27

申请号：US09765388

申请日：2001-01-22

申请人： Nobuo Shimazu ,  Takao Utsumi

发明人： Nobuo Shimazu ,  Takao Utsumi

IPC分类号： H01J3700

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/3174 ,  H01J2237/31788

摘要： The electron beam proximity exposure apparatus comprises: an electron beam source which emits an electron beam; an electron beam shaping device which shapes the electron beam; a mask which has an aperture and is disposed on a path of the shaped electron beam; a deflecting and scanning device which deflects the electron beam to scan the mask with the shaped electron beam; and a stage which holds and moves an object, wherein the mask is disposed in proximity to a surface of the object, and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, wherein the electron beam shaping device shapes the electron beam into a slender beam of which cross section has a small width in a direction of the scanning and a large width in a direction perpendicular to the direction of the scanning. Thus, in the electron beam proximity exposure apparatus, the responsiveness of the on-off control over the application of the electron beam can be improved with keeping the scanning width large without lowering the throughput of the exposure apparatus.

摘要翻译： 电子束接近曝光装置包括：发射电子束的电子束源; 形成电子束的电子束整形装置; 具有孔径并设置在成形电子束的路径上的掩模; 偏转和扫描装置，其使电子束偏转以用成形电子束扫描掩模; 以及保持和移动物体的台阶，其中所述掩模设置在所述物体的表面附近，并且与所述掩模的孔径相对应的图案在所述物体的表面上暴露，所述电子束已经通过所述物体 孔，其中电子束成形装置将电子束成形为在扫描方向上横截面具有小宽度并且在垂直于扫描方向的方向上具有大宽度的细长光束。 因此，在电子束接近曝光装置中，通过保持扫描宽度大而不降低曝光装置的生产能力，可以提高对施加电子束的开 - 关控制的响应性。

公开(公告)号：US06703623B1

公开(公告)日：2004-03-09

申请号：US09670262

申请日：2000-09-27

申请人： Nobuo Shimazu ,  Takao Utsumi

发明人： Nobuo Shimazu ,  Takao Utsumi

IPC分类号： G03F700

CPC分类号： G03F7/2037 ,  H01J2237/3175

摘要： The electronic beam proximity exposure apparatus comprises: an electron beam proximity exposure section which exposes a pattern corresponding to an aperture of a mask on a surface of an object with an electron beam having passed through the aperture of the mask, the mask being disposed in proximity to the surface of the object; a mask inspecting section which inspects the mask; and a mask carrying mechanism which carries the mask between the electron beam proximity exposure section and the mask inspecting section, and is characterized in that the electron beam proximity exposure section, the mask inspecting section and the mask carrying mechanism are communicated with one another through a common vacuum path so that the mask can be carried in a vacuum condition between the electron beam proximity exposure section and the mask inspecting section. This realizes the electronic beam proximity exposure apparatus that enhances a reliability by preventing a defect from being produced due to adhering dust or the like.

摘要翻译： 电子束接近曝光装置包括：电子束接近曝光部，其电子束通过掩模的孔露出与物体表面上的掩模的孔相对应的图案，掩模设置在接近 到物体的表面; 检查面具的面罩检查部; 以及在电子束接近曝光部和掩模检查部之间携带掩模的掩模搬送机构，其特征在于，电子束接近曝光部，掩模检查部和面罩传送机构通过 通常的真空路径，使得掩模可以在电子束接近曝光部分和掩模检查部分之间的真空条件下被携带。 这实现了通过防止由于灰尘等的附着而产生缺陷而提高可靠性的电子束接近曝光装置。

公开(公告)号：US5006795A

公开(公告)日：1991-04-09

申请号：US878015

申请日：1986-06-24

申请人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

发明人： Masahiro Yoshizawa ,  Akira Kikuchi ,  Kou Wada ,  Minpei Fujinami ,  Nobuo Shimazu

IPC分类号： G01Q70/02 ,  G01R31/305 ,  H01J37/26

CPC分类号： G01R31/305 ,  H01J37/268

摘要： A charged beam radiation apparatus includes an auxiliary charged beam emitting mechanism, a main charged beam emitting mechanism, a secondary electron detector, and a computer as a controller. The auxiliary charged beam emitting mechanism emits an auxiliary charged beam of a given acceleration voltage onto a predetermined portion of an electronic device to be measured. The main charged beam emitting mechanism emits a main charged beam of an acceleration voltage lower than that of the auxiliary charged beam onto the predetermined portion and the vicinity of the predetermined portion. The secondary electron detector detects secondary electrons generated from a portion irradiated by the main charged beam. The controller measures a change in a secondary electron signal from the secondary electron detector.

摘要翻译： 带电波束辐射装置包括辅助充电光束发射机构，主充电光束发射机构，二次电子检测器和作为控制器的计算机。 辅助充电光束发射机构将给定加速电压的辅助充电光束发射到要测量的电子设备的预定部分上。 主充电光束发射机构将预定部分和预定部分附近的加电压低于辅助充电光束的主充电光束发射。 二次电子检测器检测由主充电光束照射的部分产生的二次电子。 控制器测量来自二次电子检测器的二次电子信号的变化。