利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.027 秒)

    Photovoltaic device, manufacturing method thereof, and photovoltaic module
    5.
    发明授权
    Photovoltaic device, manufacturing method thereof, and photovoltaic module 有权
    光伏器件及其制造方法以及光伏模块

    公开(公告)号：US09252305B2

    公开(公告)日：2016-02-02

    申请号：US13979272

    申请日：2012-03-02

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

    CPC分类号： H01L31/03529 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.

    摘要翻译： 光电器件包括在一个表面侧包括杂质扩散层的第一导电类型的硅衬底; 光接收面侧电极，其包括电连接到所述杂质扩散层的多个栅电极; 以及形成在所述硅基板的另一个表面侧的背面侧电极，其中所述杂质扩散层包括第一杂质扩散层和第二杂质扩散层，并且其中所述第一杂质扩散层形成为使得垂直于 栅电极的长度方向为长度方向，第一杂质扩散层与带区的面积比为50％以下。

    Hydraulic device
    6.
    发明授权
    Hydraulic device 有权
    液压装置

    公开(公告)号：US06082106A

    公开(公告)日：2000-07-04

    申请号：US174842

    申请日：1998-10-19

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： E02F9/22 ,  F15B11/16 ,  F15B11/05

    CPC分类号： E02F9/2267 ,  E02F9/2225 ,  E02F9/2271 ,  E02F9/2296 ,  F15B11/165 ,  F15B2211/20553 ,  F15B2211/251 ,  F15B2211/30505 ,  F15B2211/30535 ,  F15B2211/3055 ,  F15B2211/30555 ,  F15B2211/3111 ,  F15B2211/3144 ,  F15B2211/31529 ,  F15B2211/324 ,  F15B2211/50536 ,  F15B2211/513 ,  F15B2211/5158 ,  F15B2211/528 ,  F15B2211/55 ,  F15B2211/57 ,  F15B2211/6054 ,  F15B2211/7135 ,  F15B2211/88

    摘要： A hydraulic device comprises a variable displacement pump, a plurality of hydraulic actuators, a plurality of directional valves capable of controlling the delivery oil flowing into each of the actuators, a plurality of pressure compensation valves which compensate the pressures of respective directional valves, and a delivery oil flow rate varying means capable of controlling the pump delivery. At least one of the pressure compensation valves decreases its output flow to a particular actuator according to an increase in the loaded pressure of the particular actuator. With this arrangement, if the loaded pressure of the particular actuator suddenly changes, the loaded pressure attenuates to ensure stable operation of the hydraulic device. Further, the stable operation is fee of hunting for both low-load actuators and high load actuators, regardless of an independent operation or a compound operation.

    摘要翻译： 液压装置包括可变排量泵，多个液压致动器，能够控制流入每个致动器的输送油的多个方向阀，补偿各个换向阀的压力的多个压力补偿阀，以及 输送油流量变化装置，其能够控制泵输送。 根据特定致动器的负载压力的增加，至少一个压力补偿阀将其输出流量减小到特定的致动器。 通过这种布置，如果特定致动器的负载压力突然变化，则负载压力衰减以确保液压装置的稳定运行。 此外，无论独立操作还是复合操作，稳定操作都是低负载致动器和高负载致动器的打猎费。

    Method of producing thin-film solar cell
    7.
    发明授权
    Method of producing thin-film solar cell 失效
    制造薄膜太阳能电池的方法

    公开(公告)号：US5397713A

    公开(公告)日：1995-03-14

    申请号：US993021

    申请日：1992-12-18

    申请人： Satoshi Hamamoto ,  Mikio DeGuchi

    发明人： Satoshi Hamamoto ,  Mikio DeGuchi

    IPC分类号： H01L21/02 ,  H01L31/04 ,  H01L31/048 ,  H01L31/18

    CPC分类号： H01L31/048 ,  H01L31/0445 ,  H01L31/1804 ,  H01L31/1872 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/135

    摘要： In a method of producing a thin-film solar cell, a graphite sheet in which the breaking stress in a thickness direction is smaller than the breaking stress in a direction perpendicular to the thickness direction is adhered to a heat resistant substrate, a semiconductor thin film is formed on the graphite sheet in a high temperature process, a second substrate for supporting the semiconductor thin film is adhered to the semiconductor thin film, and the graphite sheet is broken by applying a mechanical stress to the heat resistant substrate and the second substrate. The semiconductor thin film is reliably supported by the heat resistant substrate during high temperature processing and easily removed from the heat resistant substrate by breaking the graphite sheet. In addition, since the graphite sheet has an anisotropic breaking stress, fragments of the graphite sheet remaining on the surface of the semiconductor thin film are easily removed. As a result, a high quality thin film solar cell is produced reliably at low cost.

    摘要翻译： 在制造薄膜太阳能电池的方法中，在厚度方向上的断裂应力小于在与厚度方向垂直的方向上的断裂应力的石墨片粘附到耐热基板上，半导体薄膜 在高温工艺中形成在石墨片上，用于支撑半导体薄膜的第二基板粘附到半导体薄膜上，并且通过对耐热基板和第二基板施加机械应力来破坏石墨片。 半导体薄膜在耐高温处理时被耐热基板可靠地支撑，并且通过破坏石墨片而容易地从耐热基板上去除。 此外，由于石墨片具有各向异性的断裂应力，因此易于除去残留在半导体薄膜的表面上的石墨片的碎片。 结果，以低成本可靠地生产高品质的薄膜太阳能电池。

    MANUFACTURING METHOD OF PHOTOVOLTAIC DEVICE AND MANUFACTURING APPARATUS FOR PHOTOVOLTAIC DEVICE
    8.
    发明申请
    MANUFACTURING METHOD OF PHOTOVOLTAIC DEVICE AND MANUFACTURING APPARATUS FOR PHOTOVOLTAIC DEVICE 有权
    光伏器件的制造方法和光伏器件的制造设备

    公开(公告)号：US20140302629A1

    公开(公告)日：2014-10-09

    申请号：US14364855

    申请日：2012-02-01

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： H01L31/18 ,  H01L21/306 ,  H01L21/67 ,  H01L21/225

    CPC分类号： H01L31/18 ,  H01L21/223 ,  H01L21/225 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/67063 ,  H01L21/6708 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.

    摘要翻译： 一种制造方法包括通过在硅基基板的表面中扩散杂质元素来形成杂质扩散层的步骤; 以及蚀刻步骤，在所述硅基基板的第一表面侧的至少一部分中除去所述杂质扩散层，其中所述蚀刻步骤包括蚀刻液供给步骤，所述蚀刻流体供给步骤在所述第一表面侧供给 从供给位置流入硅基基板的外缘部的蚀刻流体，以及与第一表面侧相反的硅基基板的第二表面侧的空气供给工序 根据蚀刻流体供给步骤中的蚀刻流体的供给，沿与蚀刻流体相同的方向供给空气。

    Spool valve with decreased fluid force acting on spool
    9.
    发明授权
    Spool valve with decreased fluid force acting on spool 有权
    阀芯上的流体力减小的阀芯

    公开(公告)号：US06810912B2

    公开(公告)日：2004-11-02

    申请号：US10446114

    申请日：2003-05-28

    申请人： Yuuji Ogura ,  Satoshi Hamamoto ,  Zenzou Hamada ,  Satoshi Okude

    发明人： Yuuji Ogura ,  Satoshi Hamamoto ,  Zenzou Hamada ,  Satoshi Okude

    IPC分类号： F15B1304

    CPC分类号： F15B13/0402 ,  F16K27/041 ,  F16K27/048 ,  Y10T137/8671

    摘要： A spool valve comprises a slidable spool, and through displacement of the spool a supply port of the valve is allowed to communicate with one of the load ports of the valve while the other load port is allowed to communicate with a corresponding one of return ports of the valve. The spool is provided with a portion, the outside diameter of which gradually increases, at least on the other load port side from the center of a central concave portion of the spool. The outside diameter gradually increasing portion decreases fluid force which acts against an operating force of the spool when the valve is activated.

    摘要翻译： 滑阀包括可滑动的阀芯，并且通过阀芯的移动，允许阀的供应端口与阀的一个负载端口连通，而允许另一个负载端口与相应的一个返回端口 阀门。 阀芯设置有至少在从卷轴的中心凹部的中心的另一个装载口侧的外径逐渐增加的部分。 外径逐渐增加的部分减小了当阀被启动时抵抗阀芯的操作力的流体力。

    Semiconductor device having a polycide structure
    10.
    发明授权
    Semiconductor device having a polycide structure 失效
    具有多晶硅结构的半导体器件

    公开(公告)号：US5801427A

    公开(公告)日：1998-09-01

    申请号：US873027

    申请日：1997-06-11

    申请人： Shigeru Shiratake ,  Kaoru Motonami ,  Satoshi Hamamoto

    发明人： Shigeru Shiratake ,  Kaoru Motonami ,  Satoshi Hamamoto

    IPC分类号： H01L21/027 ,  H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062

    CPC分类号： H01L29/42376 ,  H01L21/0276 ,  H01L21/28123 ,  H01L21/76889 ,  H01L29/4933 ,  H01L29/6659 ,  H01L29/7833

    摘要： In a semiconductor device having a polycide structure located on a stepped portion, halation during formation of a resist pattern is prevented, and oxidation of an upper surface of a high-melting-point metal silicide layer is prevented during formation of an interlayer insulating film on the polycide structure. In this semiconductor device, an upper layer which is formed of one layer selected from the group consisting of an amorphous silicon layer, a polycrystalline silicon layer, a TiN layer and a TiW layer is formed on the high-melting-point metal silicide layer forming the polycide structure. This effectively suppresses reflection of light beams by the upper layer located at the stepped portion during exposure for forming the resist pattern on the upper layer. Thereby, formation of a notch at the resist pattern is prevented, and the resist pattern is accurately formed to have a designed pattern. The upper layer made of the amorphous silicon layer or polycrystalline silicon layer prevents formation of an oxide layer at an upper surface of the high-melting-point metal silicide layer due to oxydation by Oxygen carried to the inside of the CVD furnace from the outside during formation of an interlayer insulating film covering the polycide structure.

    摘要翻译： 在具有位于阶梯部分上的多晶硅结构的半导体器件中，防止形成抗蚀剂图案期间的卤化，并且在层间绝缘膜形成期间防止高熔点金属硅化物层的上表面的氧化 多晶硅结构。 在该半导体器件中，在高熔点金属硅化物层形成中形成由选自非晶硅层，多晶硅层，TiN层和TiW层的一层形成的上层 多晶硅结构。 这在上层形成抗蚀剂图案的曝光期间有效地抑制位于台阶部分的上层的光束的反射。 由此，防止在抗蚀剂图案处形成切口，并且将抗蚀剂图形精确地形成为具有设计图案。 由非晶硅层或多晶硅层制成的上层防止在高熔点金属硅化物层的上表面形成氧化物层，这是由于氧化从CVD外部向内部送入CVD炉内 形成覆盖多晶硅化物结构的层间绝缘膜。