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    Process for producing semiconductor substrate
    1.
    发明授权
    Process for producing semiconductor substrate 失效
    半导体衬底的制造方法

    公开(公告)号：US06103598A

    公开(公告)日：2000-08-15

    申请号：US678694

    申请日：1996-07-11

    申请人： Kenji Yamagata ,  Takao Yonehara ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

    发明人： Kenji Yamagata ,  Takao Yonehara ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

    IPC分类号： H01L21/306 ,  H01L21/762

    CPC分类号： H01L21/76256 ,  H01L21/0203 ,  H01L21/76243

    摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.

    摘要翻译： 提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到 第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔 通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

    Method for production of SOI substrate by pasting and SOI substrate
    4.
    发明授权
    Method for production of SOI substrate by pasting and SOI substrate 失效
    通过粘贴和SOI衬底生产SOI衬底的方法

    公开(公告)号：US6156624A

    公开(公告)日：2000-12-05

    申请号：US832859

    申请日：1997-04-04

    申请人： Kenji Yamagata ,  Takao Yonehara ,  Tadashi Atoji ,  Kiyofumi Sakaguchi

    发明人： Kenji Yamagata ,  Takao Yonehara ,  Tadashi Atoji ,  Kiyofumi Sakaguchi

    IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L21/306

    CPC分类号： H01L21/2007 ,  H01L21/76251 ,  Y10S438/977

    摘要： This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO.sub.2 surface and a second substrate possessing a Si surface on the SiO.sub.2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate, thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.

    摘要翻译： 本发明解决了在其周边部分产生空隙的粘贴SOI衬底的问题，从而减少了从其导出的器件的数量。 本发明涉及制备通过在SiO 2表面和Si表面上粘贴具有SiO 2表面的第一Si衬底和具有Si表面的第二衬底而获得的SOI衬底的方法，该方法包括：将第二Si的Si表面 从而在将第一Si衬底和第二Si衬底粘贴在一起之前对Si表面赋予疏水性。

    Semiconductor article with porous structure
    6.
    发明授权
    Semiconductor article with porous structure 有权
    具有多孔结构的半导体制品

    公开(公告)号：US06246068B1

    公开(公告)日：2001-06-12

    申请号：US09212432

    申请日：1998-12-16

    申请人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    发明人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    IPC分类号： H01L4700

    CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/3223 ,  H01L21/3226 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L31/1892 ,  Y02E10/50

    摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.

    摘要翻译： 提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。 为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。 通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。 此时，在多孔Si层上外延生长无孔单晶Si层。 此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。 随后，进行选择性蚀刻以去除多孔Si层。

    Method for producing semiconductor substrate
    10.
    发明授权
    Method for producing semiconductor substrate 失效
    半导体衬底的制造方法

    公开(公告)号：US5854123A

    公开(公告)日：1998-12-29

    申请号：US729722

    申请日：1996-10-07

    申请人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    发明人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L21/762 ,  H01L27/12 ,  H01L31/18 ,  H01L21/76

    CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/3223 ,  H01L21/3226 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L31/1892 ,  Y02E10/50

    摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.

    摘要翻译： 提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。 为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。 通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。 此时，在多孔Si层上外延生长无孔单晶Si层。 此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。 随后，进行选择性蚀刻以去除多孔Si层。