公开(公告)号：US08372760B2

公开(公告)日：2013-02-12

申请号：US10857935

申请日：2004-06-02

申请人： Kenneth Duerksen ,  David A. Vidusek

发明人： Kenneth Duerksen ,  David A. Vidusek

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/31155 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/67005

摘要： A system and method for forming a mechanically strengthened low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. An upper surface of the low-k dielectric film is then treated in order to increase the film's mechanical strength, or reduce its dielectric constant.

摘要翻译： 用于在衬底上形成机械强化的低k电介质膜的系统和方法包括使用旋涂电介质（SOD）技术或化学气相沉积（CVD）技术在衬底上形成低k电介质膜。 然后处理低k电介质膜的上表面以增加膜的机械强度或降低其介电常数。

公开(公告)号：US5756256A

公开(公告)日：1998-05-26

申请号：US784038

申请日：1997-01-16

申请人： Tatsuo Nakato ,  David A. Vidusek

发明人： Tatsuo Nakato ,  David A. Vidusek

IPC分类号： G03F7/09 ,  G03F7/16 ,  G03F7/11 ,  C08L33/12 ,  C08L33/24 ,  C08L61/10

CPC分类号： G03F7/094 ,  G03F7/168

摘要： A planarizing technique comprising: coating a topography overlying a substrate with a planarizing resist layer; softbaking the planarizing resist layer in the presence of a silicon-containing vapor or liquid; coating the planarizing resist layer with an imaging resist layer; softbaking the imaging resist; selectively exposing the imaging resist layer to light; developing the imaging resist layer; and etching the planarizing layer. The planarizing layer may comprise novolacs and other organic polymers used conventionally in lithographic processes. The planarizing layer may further comprise any organic acid moiety that is compatible with the solvent used to dissolve the resin. In particular, the acid moiety is indole-3-carboxylic acid. In another aspect, the invention comprises a silylated planarizing resist. The resist comprises: a solution of a polymer and an acid, the polymer being selected from the group consisting of a novolac, polymethylmethacrylate, polyhydroxystyrene and polydimethylglutarimide and the acid concentration being homogeneous with respect to a horizontal surface of a substrate to which the solution is applied; and a silicon-rich layer, the layer being formed above the solution by the reaction of an organosilane with the acid.

摘要翻译： 一种平面化技术，包括：用平坦化抗蚀剂层涂覆覆盖衬底的形貌; 在含硅蒸汽或液体的存在下软化平坦化抗蚀剂层; 用成像抗蚀剂层涂覆平坦化抗蚀剂层; 软化成像抗蚀剂; 将成像抗蚀剂层选择性地暴露于光; 显影成像抗蚀剂层; 并蚀刻平坦化层。 平版化层可以包括酚醛清漆和常规用于光刻工艺中的其它有机聚合物。 平坦化层还可以包含与用于溶解树脂的溶剂相容的任何有机酸部分。 特别地，酸部分是吲哚-3-羧酸。 在另一方面，本发明包括甲硅烷基化平坦化抗蚀剂。 抗蚀剂包括：聚合物和酸的溶液，所述聚合物选自酚醛清漆，聚甲基丙烯酸甲酯，聚羟基苯乙烯和聚二甲基戊二酰亚胺，并且酸浓度相对于溶液的水平表面是均匀的 应用; 和富硅层，该层通过有机硅烷与酸的反应形成在溶液的上方。

公开(公告)号：US5486424A

公开(公告)日：1996-01-23

申请号：US191701

申请日：1994-02-04

申请人： Tatsuo Nakato ,  David A. Vidusek

发明人： Tatsuo Nakato ,  David A. Vidusek

IPC分类号： H01L21/302 ,  G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/312 ,  B32B13/12

CPC分类号： G03F7/0752 ,  G03F7/094 ,  G03F7/168 ,  Y10T428/31 ,  Y10T428/31663 ,  Y10T428/31667

摘要： A planarizing technique comprising: coating a topography overlying a substrate with a planarizing resist layer; softbaking the planarizing resist layer in the presence of a silicon-containing vapor or liquid; coating the planarizing resist layer with an imaging resist layer; softbaking the imaging resist; selectively exposing the imaging resist layer to light; developing the imaging resist layer; and etching the planarizing layer. The planarizing layer may comprise novolacs and other organic polymers used conventionally in lithographic processes. Specifically, the polymer is selected from the group consisting of a novolac, polymethylmethacrylate, polydimethylglutarimide and polyhydroxystyrene. The planarizing layer may further comprise any organic acid moiety that is compatible with the solvent used to dissolve the resin. In particular, the acid moiety is indole-3-carboxylic acid. In another aspect, the invention comprises a silylated planarizing resist. The resist comprises: a solution of a polymer and an acid, the polymer being selected from the group consisting of a novolac, polymethylmethacrylate, polyhydroxystyrene and polydimethylglutarimide and the acid concentration being homogeneous with respect to a horizontal surface of a substrate to which the solution is applied; and a silicon-rich layer, the layer being formed above the solution by the reaction of an organosilane with the acid.

摘要翻译： 一种平面化技术，包括：用平坦化抗蚀剂层涂覆覆盖衬底的形貌; 在含硅蒸汽或液体的存在下软化平坦化抗蚀剂层; 用成像抗蚀剂层涂覆平坦化抗蚀剂层; 软化成像抗蚀剂; 将成像抗蚀剂层选择性地暴露于光; 显影成像抗蚀剂层; 并蚀刻平坦化层。 平版化层可以包括酚醛清漆和常规用于光刻工艺中的其它有机聚合物。 具体地，聚合物选自酚醛清漆，聚甲基丙烯酸甲酯，聚二甲基戊二酰亚胺和聚羟基苯乙烯。 平坦化层还可以包含与用于溶解树脂的溶剂相容的任何有机酸部分。 特别地，酸部分是吲哚-3-羧酸。 在另一方面，本发明包括甲硅烷基化平坦化抗蚀剂。 抗蚀剂包括：聚合物和酸的溶液，所述聚合物选自酚醛清漆，聚甲基丙烯酸甲酯，聚羟基苯乙烯和聚二甲基戊二酰亚胺，并且酸浓度相对于溶液的水平表面是均匀的 应用; 和富硅层，该层通过有机硅烷与酸的反应形成在溶液的上方。

公开(公告)号：US5403685A

公开(公告)日：1995-04-04

申请号：US954505

申请日：1992-09-29

申请人： David A. Vidusek ,  Hiroki Tabuchi

发明人： David A. Vidusek ,  Hiroki Tabuchi

IPC分类号： G03F1/26 ,  G03F7/00 ,  H01L21/027 ,  G03F9/00

CPC分类号： H01L21/0274 ,  G03F7/0035 ,  G03F1/26

摘要： Sub-micron features are defined photo-lithographically by combining phase-shifting techniques with conventional photo lithographic techniques. In a first step, phase-shifting edges are defined in a photoresist layer. Dark-bands develop at the phase-shifting edges due to wavefront interference of an illuminating radiation in a subsequent exposure step. Development leaves behind sub-micron sections of photoresist which were covered by the dark-band regions. The dark-band sections are hardened and overcoated with a new layer of photoresist. A second pattern is projected onto the second layer of photoresist using conventional techniques. The second pattern is developed so as to create features having dimensions reduced by parts of the dark-band sections previously developed.

摘要翻译： 亚微米特征通过将相移技术与常规照相光刻技术组合而光刻地定义。 在第一步骤中，相移边缘被限定在光致抗蚀剂层中。 由于随后的曝光步骤中的照明辐射的波前干扰，在相移边缘处产生暗带。 发展留下了被黑带区域覆盖的光致抗蚀剂的亚微米部分。 暗带部分被硬化并用新的光致抗蚀剂层覆盖。 使用常规技术将第二图案投影到第二层光致抗蚀剂上。 第二种图案被开发，以便产生具有由先前开发的暗带部分的尺寸减小的特征。

公开(公告)号：US07252777B2

公开(公告)日：2007-08-07

申请号：US10946565

申请日：2004-09-21

申请人： David A. Vidusek ,  Sidlgata V. Sreenivasan ,  David C. Wang

发明人： David A. Vidusek ,  Sidlgata V. Sreenivasan ,  David C. Wang

IPC分类号： C03C25/68 ,  B44C1/22

CPC分类号： B81C1/00626

摘要： The present invention features a method of patterning a substrate that includes forming from a first material, disposed on the substrate, a first film having an original pattern that includes a plurality of projections. The projections extend from a nadir surface terminating in an apex surface defining a height therebetween. A portion of the first film in superimposition with the nadir surface defines a nadir portion. The nadir portion is removed to expose a region of the substrate in superimposition therewith, defining a plurality of recessions. A second material is disposed upon the first film to form a second film having a surface spaced-apart from the apex surface of the plurality of projections and filling the plurality of recessions to form a multi-film stack. The first film and portions of the second film are removed to create a plurality of spaced-apart projections of the second material on the substrate.

摘要翻译： 本发明的特征在于一种图案化衬底的方法，其包括由设置在衬底上的第一材料形成具有包括多个突起的原始图案的第一膜。 突起从最终的表面延伸，终止于限定其间的高度的顶点表面。 第一膜中与最低点表面重叠的部分限定最低点部分。 去除最低点部分以暴露衬底的区域，从而限定多个凹陷。 第二材料设置在第一膜上以形成具有与多个突起的顶点表面间隔开的表面并填充多个凹陷以形成多层叠层的第二膜。 去除第一膜和第二膜的部分以在基板上产生多个间隔开的第二材料的突出部分。

公开(公告)号：US5370969A

公开(公告)日：1994-12-06

申请号：US922983

申请日：1992-07-28

申请人： David A. Vidusek

发明人： David A. Vidusek

IPC分类号： G03F7/26 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/30 ,  G03C1/492

CPC分类号： G03F7/094 ,  H01L21/0332

摘要： The invention provides a trilayer structure and photolithographic method which permits use of high-resolution optics with a relatively small depth of focus for patterning a substrate. A trilayer lithographic structure in accordance with the invention comprises: (a) an out-gas resistant planarization layer deposited on a substrate; (b) a chemical-vapor-deposited interfacial film formed on the planarization layer; and (c) a photosensitive resist layer of a thickness equal to or less than one micron deposited on the interfacial film. A method in accordance with the invention comprises the steps of: (a) depositing an out-gas resistant planarization layer on a substrate; (b) chemical-vapor-depositing an interfacial film on the planarization layer; and (c) forming a photosensitive resist layer of a thickness equal to or less than one micron on the interfacial film.

摘要翻译： 本发明提供三层结构和光刻方法，其允许使用具有相对较小的聚焦深度的高分辨率光学元件来图案化衬底。 根据本发明的三层光刻结构包括：（a）沉积在基底上的耐气体外延平面化层; （b）形成在平坦化层上的化学气相沉积界面膜; 和（c）沉积在界面膜上的厚度等于或小于1微米的光敏抗蚀剂层。 根据本发明的方法包括以下步骤：（a）在衬底上沉积防气体平坦化层; （b）在平坦化层上化学气相沉积界面膜; 和（c）在界面膜上形成厚度等于或小于1微米的光敏抗蚀剂层。

公开(公告)号：US4806453A

公开(公告)日：1989-02-21

申请号：US860421

申请日：1986-05-07

申请人： David A. Vidusek ,  Michael Legenza ,  Jeffery L. Vincent

发明人： David A. Vidusek ,  Michael Legenza ,  Jeffery L. Vincent

IPC分类号： G03F7/09 ,  G03F7/095 ,  G03F7/30 ,  G03F7/32 ,  G03F7/26

CPC分类号： G03F7/322 ,  G03F7/094

摘要： The invention is for a developer for a bilayer photoresist film comprising a first relatively thick layer of a polyglutarimide and a second relatively thin layer of a diazo sensitized novolak resin. The developer is an aqueous solution of a tetra alkyl ammonium hydroxide where at least two of the alkyl groups have two or more carbon atoms. The developer of the invention permits development of the bottom resist layer without erosion of the top resist layer.

摘要翻译： 本发明涉及用于双层光致抗蚀剂膜的显影剂，其包含第一相对较厚的聚戊二酰亚胺层和第二相对薄的重氮敏感酚醛清漆树脂层。 显影剂是四烷基氢氧化铵的水溶液，其中至少两个烷基具有两个或更多个碳原子。 本发明的显影剂允许开发底层抗蚀剂层而不侵蚀顶层抗蚀剂层。