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公开(公告)号：US06567580B2
公开(公告)日：2003-05-20
申请号：US09774799
申请日：2001-02-01
IPC分类号： G02B628
CPC分类号： G02B6/2938 , G02B6/12004 , G02B6/12007 , G02B6/29332 , G02B6/29361 , G02B6/4204 , H04J14/02
摘要： A broadband partial reflector is located downstream from an optical combiner device. The partial reflector reflects a portion of the combined light back through the combiner device and back into the respective optical pump sources. There are no fiber gratings or other filters between the sources and the combiner device. Consequently, the sources are locked and/or stabilized according to the acceptance bandpass characteristics of the input ports of the combiner device. Since no gratings or other filters need to be located between the sources and the combiner device, the problem of insertion power loss due to spectral mismatch at the input ports can be avoided. In other words, self-aligned wavelength feedback stabilization is accomplished by reflecting a portion of the combined light signal back through the input ports of the combiner device.
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公开(公告)号：US06552358B2
公开(公告)日：2003-04-22
申请号：US10165825
申请日：2002-06-08
IPC分类号： H01L3300
CPC分类号： H01S5/227 , H01S5/0655 , H01S5/2036 , H01S5/2218
摘要： A semiconductor laser having a single transverse mode operation. Optical power higher than that generated by conventional pump lasers is achieved by widening the gain medium without inducing the second transverse mode. This is accomplished by providing a small refractive index difference between active and blocking regions of the laser. The refractive index difference between the laser active region material and the laser blocking region material at the fundamental frequency is less than about 0.029.
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公开(公告)号：US06432735B1
公开(公告)日：2002-08-13
申请号：US09602931
申请日：2000-06-23
IPC分类号： H01L2906
CPC分类号： H01S5/227 , H01S5/0655 , H01S5/2036 , H01S5/2218
摘要： A semiconductor laser having a single transverse mode operation. Optical power higher than that generated by conventional pump lasers is achieved by widening the gain medium without inducing the second transverse mode. This is accomplished by providing a small refractive index difference between active and blocking regions of the laser. The refractive index difference between the laser active region material and the laser blocking region material at the fundamental frequency is less than about 0.029.
摘要翻译： 具有单横模操作的半导体激光器。 通过在不引起第二横向模式的情况下加宽增益介质来实现比常规泵浦激光器产生的光功率更高的光功率。 这通过在激光器的有源和阻挡区域之间提供小的折射率差来实现。 激光有源区材料与激光阻挡区域材料之间的基频处的折射率差小于约0.029。
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公开(公告)号：US5486263A
公开(公告)日：1996-01-23
申请号：US908130
申请日：1992-07-02
IPC分类号： C30B29/04 , C04B41/53 , C04B41/91 , C30B33/08 , H01L21/24 , H01L21/302 , H01S5/00 , H01L21/00
CPC分类号： C04B41/009 , C04B41/5361 , C04B41/91 , H01L21/24 , H01L21/302 , Y10T156/10
摘要： A diamond body, such as a CVD diamond film, is etched by immersion of the body in a molten or partially molten metal, such as the rare earth metal La or Ce. While the body is being etched, various portions of a major surface of the body can be protected for various time durations by masks against the etching--whereby, after dicing the body, the resulting dies can be used as submounts for lasers with feedback.
摘要翻译： 通过将本体浸入熔融或部分熔融的金属（例如稀土金属La或Ce）中来蚀刻诸如CVD金刚石膜的金刚石体。 当身体被蚀刻时，通过面对蚀刻的掩模可以保护身体的主表面的各个部分的不同时间，由此，在切割身体之后，所得到的模具可以用作具有反馈的激光器的副安装座。
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公开(公告)号：US4258984A
公开(公告)日：1981-03-31
申请号：US75718
申请日：1979-09-14
CPC分类号： G02F1/1527 , G02F1/1525
摘要： Electrochromic devices based on electrochromic iridium oxide electrodes are disclosed. These electrodes are iridium oxide entities produced by vacuum deposition techniques such as by sputtering from an iridium target in the presence of an oxygen atmosphere. All solid state electrochromic devices utilizing such electrodes are possible.
摘要翻译： 公开了基于电致变色铱氧化物电极的电致变色器件。 这些电极是通过真空沉积技术产生的氧化铱实体，例如通过在氧气气氛存在下从铱靶溅射。 使用这种电极的所有固态电致变色器件都是可能的。
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公开(公告)号：US5036023A
公开(公告)日：1991-07-30
申请号：US394600
申请日：1989-08-16
申请人： William C. Dautremont-Smith , Avishay Katz , Louis A. Koszi , Bryan P. Segner , Peter M. Thomas
发明人： William C. Dautremont-Smith , Avishay Katz , Louis A. Koszi , Bryan P. Segner , Peter M. Thomas
IPC分类号： H01L21/28 , H01L21/285 , H01L29/45 , H01L33/24 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/223 , H01S5/24
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/24 , H01S5/0425 , H01L33/30 , H01S5/2237 , H01S5/24 , Y10S148/02
摘要： The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-475.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).
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公开(公告)号：US4610731A
公开(公告)日：1986-09-09
申请号：US719503
申请日：1985-04-03
IPC分类号： H01L29/812 , H01L21/263 , H01L21/265 , H01L21/268 , H01L21/314 , H01L21/324 , H01L21/338 , H01L21/76 , H01L29/80 , H01S5/00
CPC分类号： H01L21/2636 , H01L21/268 , H01L21/3245 , H01L21/7605 , Y10S148/084 , Y10S148/128
摘要： A process is described for fabricating semiconductor devices in which atomic hydrogen is used to neutralize shallow donors in III-V semiconductor compounds so as to make certain areas exhibit high resistance. Also described is reverse neutralization in which heat is used to convert neutralized regions to regions with n-type conductivity.
摘要翻译： 描述了一种用于制造其中使用原子氢中和III-V族半导体化合物中的浅供体的半导体器件的方法，以使某些区域呈现高电阻。 还描述了反向中和，其中使用热将中和的区域转换成具有n型导电性的区域。
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公开(公告)号：US4257856A
公开(公告)日：1981-03-24
申请号：US85819
申请日：1979-10-17
CPC分类号： C25B11/0447 , C25B1/04 , Y02E60/366
摘要： It is possible to significantly increase the efficiency of the electrolysis of water into hydrogen and oxygen while maintaining stability of the anode. This efficiency increase is obtained by using an iridium oxide anode which is produced by vacuum deposition techniques.
摘要翻译： 在保持阳极的稳定性的同时，可以将水的电解显着提高为氢气和氧气的效率。 通过使用通过真空沉积技术制备的氧化铱阳极获得该效率提高。
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公开(公告)号：US5334306A
公开(公告)日：1994-08-02
申请号：US973611
申请日：1992-11-19
申请人： William C. Dautremont-Smith , Leonard C. Feldman , Rafael Kalish , Avishay Katz , Barry Miller , Netzer Moriya
发明人： William C. Dautremont-Smith , Leonard C. Feldman , Rafael Kalish , Avishay Katz , Barry Miller , Netzer Moriya
IPC分类号： C01B31/06 , H01L21/203 , H01L21/48 , H01L21/52 , H01L23/12 , H01L23/373 , H01S3/00 , H05K3/10 , C25D5/02 , C25D5/54 , C25D7/12
CPC分类号： H05K3/105 , H01L21/4803 , H01L21/486 , H01L23/3732 , H01L2924/0002 , H01L2924/3011
摘要： A graphite path is formed along the surface of a diamond plate, preferably a CVD diamond plate, by means of a laser or ion-implantation induced conductivity. The path advantageously can be the surface of a sidewall of a via hole drilled by the laser through the plate or a path running along a side surface of the plate from top to bottom opposed major surfaces of the plate. The graphite path is metallized, as by electroplating or electroless plating. In this way, for example, an electrically conducting connection can be made between a metallized backplane located on the bottom surface of the plate and a wire-bonding pad located on the top surface of the plate.
摘要翻译： 通过激光或离子注入诱导的导电性，沿着金刚石板的表面，优选为CVD金刚石板形成石墨路径。 该路径有利地可以是激光穿过板钻出的通孔的侧壁的表面或沿着板的侧表面从板的顶部到底部相对的主表面延伸的路径。 石墨路径被金属化，如通过电镀或化学镀。 以这种方式，例如，可以在位于板的底表面上的金属化背板和位于板的顶表面上的引线焊盘之间形成导电连接。
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公开(公告)号：US5100836A
公开(公告)日：1992-03-31
申请号：US675304
申请日：1991-03-26
申请人： William C. Dautremont-Smith , Avishay Katz , Louis A. Koszi , Bryan P. Segner , Peter M. Thomas
发明人： William C. Dautremont-Smith , Avishay Katz , Louis A. Koszi , Bryan P. Segner , Peter M. Thomas
IPC分类号： H01L21/285 , H01L29/45 , H01L33/24 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/223 , H01S5/24
CPC分类号： H01L33/24 , H01L21/28575 , H01L29/452 , H01L33/40 , H01S5/0425 , H01L33/30 , H01S5/2237 , H01S5/24 , Y10S148/02
摘要： Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-500.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).
摘要翻译： 公开了制造半导体器件的方法，其示例性地包括在半导体主体的p掺杂区域上的AuBe中间层上沉积Ti / Pt层。 它还包括将Ti / Pt层沉积到半导体主体的n掺杂区域上，或者在n掺杂区域上的AuGe中间层上沉积，然后进行快速热处理。 示例性地，器件是半导体激光器，n掺杂区域是InP，p掺杂区域是InGaAs或InGaAsP，并且RTP涉及在425℃-500℃范围内加热10-100秒。 该方法包括比典型的现有技术方法更少的处理步骤，降低了制造误差和晶片断裂的危险，并且显着地导致可以相对热稳定并且可以具有非常低的比接触电阻的接触（示例性地低至10- 7 OMEGA xcm2）。
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