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    Method of making a semiconductor device
    1.
    发明授权
    Method of making a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5100836A

    公开(公告)日：1992-03-31

    申请号：US675304

    申请日：1991-03-26

    申请人： William C. Dautremont-Smith ,  Avishay Katz ,  Louis A. Koszi ,  Bryan P. Segner ,  Peter M. Thomas

    发明人： William C. Dautremont-Smith ,  Avishay Katz ,  Louis A. Koszi ,  Bryan P. Segner ,  Peter M. Thomas

    IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L33/24 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/24

    CPC分类号： H01L33/24 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/40 ,  H01S5/0425 ,  H01L33/30 ,  H01S5/2237 ,  H01S5/24 ,  Y10S148/02

    摘要： Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-500.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).

    摘要翻译： 公开了制造半导体器件的方法，其示例性地包括在半导体主体的p掺杂区域上的AuBe中间层上沉积Ti / Pt层。 它还包括将Ti / Pt层沉积到半导体主体的n掺杂区域上，或者在n掺杂区域上的AuGe中间层上沉积，然后进行快速热处理。 示例性地，器件是半导体激光器，n掺杂区域是InP，p掺杂区域是InGaAs或InGaAsP，并且RTP涉及在425℃-500℃范围内加热10-100秒。 该方法包括比典型的现有技术方法更少的处理步骤，降低了制造误差和晶片断裂的危险，并且显着地导致可以相对热稳定并且可以具有非常低的比接触电阻的接触（示例性地低至10- 7 OMEGA xcm2）。

    Methods of forming robust metal contacts on compound semiconductors
    3.
    发明授权
    Methods of forming robust metal contacts on compound semiconductors 有权
    在化合物半导体上形成坚固的金属接触的方法

    公开(公告)号：US06420252B1

    公开(公告)日：2002-07-16

    申请号：US09568065

    申请日：2000-05-10

    申请人： Stephen Schwed ,  Louis A. Koszi ,  Edward W. Douglas ,  Michael G. Brown

    发明人： Stephen Schwed ,  Louis A. Koszi ,  Edward W. Douglas ,  Michael G. Brown

    IPC分类号： H01L2144

    CPC分类号： H01L21/76852 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/76841 ,  H01L21/76897

    摘要： A method of forming a self-aligned contact on a semiconductor includes forming a layer of a dielectric material over a semiconductor, providing a photoresist layer over the dielectric layer and then exposing the photoresist layer with a desired pattern and developing an opening in the photoresist layer. The dielectric material exposed through the photoresist layer opening is then removed to form a contact opening extending through the dielectric material to the semiconductor. The photoresist layer is then eroded so as to enlarge the size of the opening in the photoresist layer, whereby the dielectric material adjacent the contact opening is exposed through the enlarged opening of the photoresist layer. A barrier metal is then deposited in the enlarged opening of the photoresist layer and in the contact opening of the dielectric material, whereby the barrier metal overlies the exposed portion of the dielectric material. A conductive metal is then deposited atop the barrier metal. The barrier metal isolates the contact metal from the semiconductor, thereby preventing interaction or intermixing of the contact metal and the semiconductor.

    摘要翻译： 在半导体上形成自对准接触的方法包括在半导体上形成介电材料层，在介电层上提供光致抗蚀剂层，然后以期望的图案曝光光致抗蚀剂层，并在光刻胶层中显影出一个开口 。 然后去除通过光致抗蚀剂层开口暴露的电介质材料以形成延伸穿过介电材料到半导体的接触开口。 然后蚀刻光致抗蚀剂层以扩大光致抗蚀剂层中的开口的尺寸，由此邻近接触开口的电介质材料通过光致抗蚀剂层的扩大的开口暴露。 然后在光致抗蚀剂层的扩大开口中和介电材料的接触开口中沉积阻挡金属，由此阻挡金属覆盖在电介质材料的暴露部分上。 然后在阻挡金属顶上沉积导电金属。 阻挡金属将接触金属与半导体隔离，从而防止接触金属和半导体的相互作用或混合。

    Light-emitting diodes with loop and strip electrodes and with wide medial sections
    4.
    发明授权
    Light-emitting diodes with loop and strip electrodes and with wide medial sections 有权
    具有环形和带状电极的发光二极管以及宽的中间部分

    公开(公告)号：US06642548B1

    公开(公告)日：2003-11-04

    申请号：US09692953

    申请日：2000-10-20

    申请人： Michael G. Brown ,  Ivan Eliashevich ,  Louis A. Koszi

    发明人： Michael G. Brown ,  Ivan Eliashevich ,  Louis A. Koszi

    IPC分类号： H01L3300

    CPC分类号： H01L33/38 ,  H01L33/20

    摘要： Light emitting diodes such as those formed from gallium nitride based semiconductors are provided with electrode and pad structures which facilitate current spreading. The LED may be formed as a die with a lower contact surface and a mesa projecting upwardly from the lower contact surface. An electrode on the lower contact surface may be in the form of a ring substantially encircling the mesa. In other arrangements, the pad and/or electrode on the lower contact surface is disposed in an indentation on one edge of the mesa whereas the pad on the top of the mesa is disposed adjacent the opposite edge of the mesa.

    摘要翻译： 诸如由基于氮化镓的半导体形成的发光二极管设置有便于电流扩散的电极和焊盘结构。 LED可以形成为具有下接触表面的模具和从下接触表面向上突出的台面。 下接触表面上的电极可以是基本上环绕台面的环的形式。 在其他布置中，下接触表面上的焊盘和/或电极设置在台面的一个边缘上的凹陷中，而台面的顶部上的焊盘邻近台面的相对边缘设置。

    Analog optical fiber communication system, and laser adapted for use in such a system
    5.
    发明授权
    Analog optical fiber communication system, and laser adapted for use in such a system 失效
    模拟光纤通信系统和适用于这种系统的激光器

    公开(公告)号：US5111475A

    公开(公告)日：1992-05-05

    申请号：US672306

    申请日：1991-03-20

    申请人： David A. Ackerman ,  Leonard J. Ketelsen ,  Louis A. Koszi

    发明人： David A. Ackerman ,  Leonard J. Ketelsen ,  Louis A. Koszi

    IPC分类号： H01S5/028 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H04B10/155

    CPC分类号： H04B10/58 ,  H01S5/12 ,  H04B10/504 ,  H04B10/541 ,  H01S5/028 ,  H01S5/06 ,  H01S5/06213 ,  H01S5/06255 ,  H01S5/06258 ,  H01S5/10 ,  H01S5/124 ,  H01S5/1243

    摘要： Lasers for use in multichannel analog optical fiber communication systems (e.g., of the type contemplated for CATV) have to meet very stringent requirements, including high linearity. DFB lasers are advantageously used in such communication systems. Typically only a relatively small percentage of the nominally identical DFB lasers on a wafer meet the specifications. It has now been discovered that the likelihood that a given DFB laser will meet the requirements is substantially increased if the laser comprises means that are adapted for producing a non-uniform photon density in the laser cavity, with the density of photons being larger in the rear portion of the cavity than in the front portion, such that during operation of the laser the gain in the back portion is substantially independent of the laser current, whereas the gain in the front portion is a function of the laser current. A particular embodiment of the invention is a "bare patch" DFB laser having a grating that extends only part way from the front facet towards the back facet, such that a portion of the laser cavity does not have the grating associated therewith. The design ensures that the proper photon density is established within the laser cavity with high probability, largely independent of the rear (HR) facet reflection phase.

    摘要翻译： 用于多通道模拟光纤通信系统（例如，针对CATV的类型）的激光器必须满足非常严格的要求，包括高线性度。 DFB激光器有利地用于这种通信系统中。 通常，晶片上名义上相同的DFB激光器的相对较小百分比符合规格。 现在已经发现，如果激光器包括适于在激光腔中产生不均匀的光子密度的装置，则给定的DFB激光器将满足要求的可能性显着增加，其中光子的密度在 使得在激光器的操作期间，背部的增益基本上与激光电流无关，而前部的增益是激光电流的函数。 本发明的一个具体实施方案是具有光栅的“裸贴片”DFB激光器，该光栅仅从前刻面朝向后刻面仅部分延伸，使得激光腔的一部分不具有与之相关联的光栅。 该设计确保在激光腔内以高概率建立适当的光子密度，很大程度上独立于后（HR）面反射相位。

    Buried double heterostructure laser device
    8.
    发明授权
    Buried double heterostructure laser device 失效
    埋双重异质结激光器件

    公开(公告)号：US4230997A

    公开(公告)日：1980-10-28

    申请号：US7429

    申请日：1979-01-29

    申请人： Robert L. Hartman ,  Marc Ilegems ,  Louis A. Koszi ,  Wilfried R. Wagner

    发明人： Robert L. Hartman ,  Marc Ilegems ,  Louis A. Koszi ,  Wilfried R. Wagner

    IPC分类号： H01S5/22 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/227 ,  H01S5/2215 ,  H01S5/2275

    摘要： A buried double heterostructure laser device isdescribed. A wafer of double heterostructure material is formed into narrow mesa stripes. A native oxide coating is formed on the side walls of the mesa. Semiconductor material having an index of refraction which is closely matched to the index of the active region is deposited over the mesa structure. High resistivity polycrystalline material forms on the native oxide and monocrystalline material forms on the top of the mesa. Vertical carrier and optical confinement is achieved by the higher bandgap cladding layers of the double heterostructure configuration. The native oxide acts as an electrical insulator to confine pumping current to the mesa. The closely matched polycrystalline material confines light parallel to the junction plane and prevents excitation of higher order transverse modes. Devices have been fabricated which exhibit cw threshold currents at room temperature as low as 55 mA.

    摘要翻译： 描述了埋置的双异质结构激光器件。 双异质结构材料的晶片形成窄的台面条纹。 在台面的侧壁上形成天然氧化物涂层。 具有与有源区的折射率紧密匹配的折射率的半导体材料沉积在台面结构上。 在自然氧化物上形成高电阻率多晶材料，在台面的顶部形成单晶材料。 通过双异质结构配置的较高带隙包层实现垂直载流子和光限制。 天然氧化物用作电绝缘体以将泵浦电流限制在台面上。 紧密匹配的多晶材料将光束平行于接合面限制，并防止高阶横模的激发。 已经制造出在室温下低至55mA的cw阈值电流的器件。

    Article comprising an opto-electronic device and an optical waveguide coupled thereto, and method of making the article
    10.
    发明授权
    Article comprising an opto-electronic device and an optical waveguide coupled thereto, and method of making the article 失效
    本发明涉及一种光电器件和耦合到其上的光波导件及其制造方法

    公开(公告)号：US4892374A

    公开(公告)日：1990-01-09

    申请号：US163689

    申请日：1988-03-03

    申请人： David A. Ackerman ,  Louis A. Koszi

    发明人： David A. Ackerman ,  Louis A. Koszi

    IPC分类号： G02B6/30 ,  G02B6/122 ,  G02B6/42

    CPC分类号： G02B6/4225 ,  G02B6/4221 ,  G02B6/4228

    摘要： A method for aligning an opto-electronic device such as a semiconductor laser to a waveguide on a substrate is disclosed. The method comprises placing the device onto the substrate such that it is in rough alignment with the waveguide, optically pumping the device such that the device emits electromagnetic radiation, with some of the emitted radiation being coupled into the waveguide and detected by appropriate means. If indicated by the detector signal, the position of the device is then adjusted until the desired degree of coupling is attained, whereupon the device is mechanically secured to the substrate and appropriate electrical connections made between device and substrate. Devices useful in the practice of the method typically comprise a window in their top metallization layer.