公开(公告)号：US06468825B1

公开(公告)日：2002-10-22

申请号：US09502709

申请日：2000-02-11

申请人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

发明人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

IPC分类号： H01L2100

CPC分类号： H01L27/0825

摘要： A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.

摘要翻译： 制造半导体温度传感器的方法包括以下步骤：形成PNP双极晶体管和PMOS晶体管，使得每个PNP双极晶体管的基极区域和每个PMOS晶体管的相应N阱区域同时形成 ，并在达林顿连接中连接PNP双极晶体管。

公开(公告)号：US6022792A

公开(公告)日：2000-02-08

申请号：US815907

申请日：1997-03-12

申请人： Kazutoshi Ishii ,  Naoto Inoue ,  Koushi Maemura ,  Shoji Nakanishi ,  Yoshikazu Kojima ,  Kiyoaki Kadoi ,  Takao Akiba ,  Yasuhiro Moya ,  Kentaro Kuhara

发明人： Kazutoshi Ishii ,  Naoto Inoue ,  Koushi Maemura ,  Shoji Nakanishi ,  Yoshikazu Kojima ,  Kiyoaki Kadoi ,  Takao Akiba ,  Yasuhiro Moya ,  Kentaro Kuhara

IPC分类号： H01L21/301 ,  H01L21/78 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L21/78 ,  H01L23/53228 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05012 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06051 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/75252 ,  H01L2224/85201 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025

摘要： To decrease the area of a chip, improve the manufacturing efficiency and decrease the cost in a semiconductor device such as a driver integrated circuit having a number of output pads, and an electronic circuit device such as electronic clock. There are disposed output pads superposed in two dimensions on driving transistors or logic circuits connected thereto, respectively. Further, not only aluminum interconnection but also bump electrodes or barrier metals are used for the interconnection of the semiconductor device. In a case where a semiconductor integrated circuit is electrically adhered on to a printed circuit board in a face down manner, a solder bump disposed on the semiconductor integrated circuit and the interconnection of the printed circuit board are directly connected to each other, thereby realizing the electrical connection. On this occasion, the bump electrode as the external connecting terminal of the semiconductor integrated circuit is laminated on the transistor.

摘要翻译： 为了减小芯片的面积，提高制造效率，降低诸如具有多个输出焊盘的驱动器集成电路等半导体装置以及诸如电子时钟之类的电子电路装置的成本。 在驱动晶体管或连接到其的逻辑电路上分别布置有两个重叠的输出焊盘。 此外，不仅铝互连而且凸起电极或阻挡金属用于半导体器件的互连。 在将半导体集成电路以面朝下的方式电粘接到印刷电路板的情况下，设置在半导体集成电路上的焊料凸块和印刷电路板的互连直接连接，从而实现 电气连接。 在这种情况下，作为半导体集成电路的外部连接端子的突起电极层叠在晶体管上。

公开(公告)号：US06492692B1

公开(公告)日：2002-12-10

申请号：US09407382

申请日：1999-09-28

申请人： Kazutoshi Ishii ,  Naoto Inoue ,  Koushi Maemura ,  Shoji Nakanishi ,  Yoshikazu Kojima ,  Kiyoaki Kadoi ,  Takao Akiba ,  Yasuhiro Moya ,  Kentaro Kuhara

发明人： Kazutoshi Ishii ,  Naoto Inoue ,  Koushi Maemura ,  Shoji Nakanishi ,  Yoshikazu Kojima ,  Kiyoaki Kadoi ,  Takao Akiba ,  Yasuhiro Moya ,  Kentaro Kuhara

IPC分类号： H01L2972

CPC分类号： H01L24/05 ,  H01L21/78 ,  H01L23/53228 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05012 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06051 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/75252 ,  H01L2224/85201 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： To decrease the area of a chip, improve the manufacturing efficiency and decrease the cost in a semiconductor device such as a driver integrated circuit having a number of output pads, and an electronic circuit device such as electronic clock. There are disposed output pads superposed in two dimensions on driving transistors or logic circuits connected thereto, respectively. Further, not only aluminum interconnection but also bump electrodes or barrier metals are used for the interconnection of the semiconductor device. In a case where a semiconductor integrated circuit is electrically adhered on to a printed circuit board in a face down manner, a solder bump disposed on the semiconductor integrated circuit and the interconnection of the printed circuit board are directly connected to each other, thereby realizing the electrical connection. On this occasion, the bump electrode as the external connecting terminal of the semiconductor integrated circuit is laminated on the transistor.

摘要翻译： 为了减小芯片的面积，提高制造效率，降低诸如具有多个输出焊盘的驱动器集成电路等半导体装置以及诸如电子时钟之类的电子电路装置的成本。 在驱动晶体管或连接到其的逻辑电路上分别布置有两个重叠的输出焊盘。 此外，不仅铝互连而且凸起电极或阻挡金属用于半导体器件的互连。 在半导体集成电路以面朝下的方式电粘接到印刷电路板的情况下，设置在半导体集成电路上的焊料凸块和印刷电路板的互连直接连接，从而实现 电气连接。 在这种情况下，作为半导体集成电路的外部连接端子的突起电极层叠在晶体管上。

公开(公告)号：US6046492A

公开(公告)日：2000-04-04

申请号：US712871

申请日：1996-09-12

申请人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

发明人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

IPC分类号： G01K7/01 ,  H01L21/8222 ,  H01L27/082

CPC分类号： H01L27/0825

摘要： A semiconductor temperature sensor comprises independent current sources and bipolar transistors connected to form a Darlington circuit. The bipolar transistors have electrodes each connected to one of the current sources. An output voltage of the semiconductor temperature sensor is adjusted by trimming a current value of at least one of the current sources.

摘要翻译： 半导体温度传感器包括独立的电流源和连接形成达林顿电路的双极晶体管。 双极晶体管具有各自连接到电流源之一的电极。 通过修剪至少一个电流源的电流值来调节半导体温度传感器的输出电压。

公开(公告)号：US5483096A

公开(公告)日：1996-01-09

申请号：US250340

申请日：1994-05-27

申请人： Kentaro Kuhara

发明人： Kentaro Kuhara

IPC分类号： H01L31/11 ,  H01L31/08 ,  H01L23/48 ,  H01L27/14 ,  H01L29/41

CPC分类号： H01L31/1105

摘要： A photo sensor comprises a semiconductor substrate, a bipolar photo transistor having an emitter region, a base region and a collector region which is formed in the surface region of the semiconductor substrate, a silicon dioxide formed on the bipolar phototransistor, and a film having a smaller diffusion coefficient of hydrogen than the silicon dioxide formed all over the silicon dioxide.

摘要翻译： 光传感器包括半导体衬底，形成在半导体衬底的表面区域中的发射极区域，基极区域和集电极区域的双极光电晶体管，形成在双极光电晶体管上的二氧化硅和具有 比二氧化硅形成的二氧化硅的氢扩散系数小。