摘要:
In a process for producing a titanium trihalide by reducing a titanium tetrahalide with hydrogen, the improvement wherein the reduction is carried out in an organic solvent in the presence of an ether and at least one member of the group consisting of metals of Groups IB, IIB, IVB and VIII of the periodic table and compounds of these materials.
摘要:
In a process for producing a rubbery olefinic copolymer which comprises random-copolymerizing at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) of the catalyst is a solution of a solid titanium halide in a hydrocarbon solvent, a halogenated hydrocarbon solvent or a mixture of both, said solid titanium halide being rendered soluble in said solvent.
摘要:
In a process for producing a rubber olefin copolymer which comprises random copolymerization of at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) is a liquid product obtained by treating a titanium tetrahalide of the general formula TiX.sub.4 in which X represents Cl, Br or I in a hydrocarbon, a halogenated hydrocarbon or a mixture of both in the presence of an ether with at least one member selected from the group consisting of (1) an organoaluminum compound, (2) an organomagnesium compound and (3) a combination of hydrogen and at least one metal or metal compound selected from the group consisting of metals of Group IB, IIB, IVB and VIII of the periodic table, compounds of metals of Group VIII of the periodic table, cuprous chloride, titanium hydride and zirconium hydride.
摘要:
A cooling device for a heat-generating electronic component such as a semiconductor integrated circuit element is provided. In particular, a cooling device using a thermoelectric conversion material is provided. A cooling device for an electronic component includes a thermoelectric conversion material disposed between two electrodes that function as a cathode and an anode and are electrically short-circuited. The thermoelectric conversion material is either a p-type material or an n-type material or a combination of p-type and n-type materials arranged alternately in series. This cooling device is brought into contact with an electronic component requiring cooling so that one electrode side in contact with the thermoelectric conversion material becomes a low-temperature side and the other electrode side becomes a high-temperature side. A temperature difference between the two electrodes causes the thermoelectric conversion material to produce a thermoelectromotive force which generates current to cool the high-temperature side.
摘要:
A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
摘要翻译:一种包含氮化硅晶粒和晶界相的氮化硅烧结体,其中晶界相主要由Lu4Si2O7N2晶相的单相组成,氮化硅烧结体的组成是三角形ABC内或周围的组成 在Si3N4-SiO2-Lu2O3体系的三元体系相图中,点A:Si 3 N 4,B点:28摩尔%SiO 2 -S72摩尔%Lu 2 O 3,点C:16摩尔%SiO 2 -S84摩尔%Lu 2 O 3作为三个顶点 。 还公开了包含氮化硅晶粒和氮氧化物的晶界相的氮化硅烧结体,其中烧结体的组成是具有点A:Si 3 N 4,点B:40摩尔%SiO 2〜60摩尔的三角形组成 %Lu2O3和点C:60mol%SiO2-40mol%Lu2O3,作为三个顶点,在Si3N4-SiO2-Lu2O3体系的三元体系相图中。
摘要:
An object of the present invention is to reduce the fastening time and to obtain a predetermined fastening force and to suppress the loosening of a screw. The solution of the present invention is to provide a method for manufacturing a fastening screw, which comprises: a preliminary upsetting step B for forging a front end of a blank wire 1 and forming a head 1a having a depression 1d in a condition, where a curve portion 1b remains in an outer periphery to be formed into a bearing surface of the fastening screw, by means of a die 21 having a protrusion 21b protruding from a flat end face 21a and a first punch 20 having a cup-shaped cavity 20a, the front end protruding from the protrusion 21b of the die 21; a finish upsetting step C for forging the head 1a and forming a recess 1c so that the depression 1d of the head 1a is not interfered with the recess 1c by the die 21 and a second punch 30 having a protrusion 30b for forming the recess 1c on the head 1a; and a thread forming step D for processing a shank 1e extending from the head 1 and forming threads on the shank 1e.
摘要:
A high-dielectric material which is especially useful as a material for a high-capacitance capacitor and which has a high dielectric constant is provided. The high-dielectric material is composed of a sintered body of a rare-earth sulfide, the high-dielectric material having a crystal structure of tetragonal β type, a chemical composition represented by Ln2S3 (where Ln represents a rare-earth metal), a frequency domain within the range of 0.5 kHz to 1,000 kHz, and a value of relative dielectric constant of more than 1,000 at room temperature.
摘要翻译:提供了特别可用作高容量电容器材料并具有高介电常数的高介电材料。 高电介质材料由稀土类硫化物的烧结体构成,具有四方β型晶体结构的高电介质材料,Ln 2 S 2表示的化学成分, 3(其中Ln表示稀土金属),频域在0.5kHz至1,000kHz范围内,相对介电常数在室温下大于1000。
摘要:
A superplastic silicon nitride sintered body which is a sintered body of silicon nitride and which has superplasticity such that when a compression or tensile stress of from 30 to 2000 kg/cm.sup.2 is applied thereto at a temperature within a range of from 1350.degree. to 1650.degree. C., it deforms at a deformation rate of from 10.sup.-4 /sec to 10.sup.-1 /sec.
摘要翻译:作为氮化硅烧结体的超塑性氮化硅烧结体,其超塑性使得当在1350〜1650℃的温度范围内施加30〜2000kg / cm 2的压缩拉伸应力时, 它以10-4 /秒的变形率变形到10-1 /秒。
摘要:
A semiconductor memory device able to read out data at a high speed continuously, provided with, corresponding to a plurality of banks, current address registers for holding addresses for reading data of cell arrays, reserved address registers able to receive in advance and hold reserved addresses for next read operations from the outside, and bank control circuits for making the current address registers hold reserved addresses held in the reserved address registers, making the data be read out, and making the data latch circuits hold the data when the data read out from the cell arrays of the banks by addresses held in the current address registers and held in the data latch circuits become able to be transferred to the outside, and a signal processing system relating to the same.
摘要:
The present invention provides a lanthanum sulfide or cerium sulfide sintered compact usable as a thermoelectric conversion material having a high Seebeck coefficient. The sintered compact has a chemical composition of La2S3 or Ce2S3, and a crystal structure consisting of a mixture of beta and gamma phases having a Seebeck coefficient higher than that of the crystal structure otherwise being in gamma single-phase. The sintered compact is produced by preparing a beta-phase La2S3 or alpha-phase Ce2S3 powder of raw material having a high purity with a suppressed carbon impurity concentration and a given range of oxygen concentration, charging the raw material into a carbon die having an inner surface covered with an h-BN applied thereon, and hot-pressing the charged material under vacuum to form a mixture of beta and gamma phases having a high Seebeck coefficient.
摘要翻译:本发明提供可用作具有高塞贝克系数的热电转换材料的硫化镧或硫化铈烧结体。 该烧结体具有La 2 S 3 3或Ce 2 S 3 3的化学组成,以及晶体结构 由具有高于晶体结构的塞贝克系数的β和γ相的混合物组成,否则为γ单相。 烧结体通过制备β相La 2 S 3或α相Ce 2 S 3 N / 具有高纯度的原料粉末,其具有抑制的碳杂质浓度和给定的氧浓度范围,将原料装入具有覆盖有h-BN的内表面的碳模头中,并将带电 在真空下形成具有高塞贝克系数的β相和γ相的混合物。