公开(公告)号：US20110174991A1

公开(公告)日：2011-07-21

申请号：US12688086

申请日：2010-01-15

申请人： Keung HUI ,  Chun-Lin CHANG

发明人： Keung HUI ,  Chun-Lin CHANG

IPC分类号： G21K5/10 ,  H01L21/68 ,  G21K5/08 ,  G21K5/04

CPC分类号： H01J37/20 ,  H01J37/3171 ,  H01J2237/20228

摘要： An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.

摘要翻译： 离子注入机系统具有用于保持半导体晶片的可移动晶片支撑件和在晶片移动时产生用于在半导体晶片中注入离子的光束的光束源。 识别多个路径段，晶片支撑件将通过该路径段移动以将半导体晶片暴露于离子束。 针对多个路径段中的每一个识别第一位置和第二位置，使得当晶片处于每个第一位置和每个第二位置时，投影在晶片平面中的光束的周边是切线的 到晶片的周边。 离子注入机被配置为沿着每个相应路径段上的相应第一位置自动地移动晶片沿着多个路径段中的每一个，并且在相同的段上的相应的第二位置处停止，以将晶片暴露于 用于在晶片中注入离子的光束。

公开(公告)号：US20130264498A1

公开(公告)日：2013-10-10

申请号：US13439124

申请日：2012-04-04

申请人： Chun-Lin CHANG ,  Chih-Hing HWANG ,  Wen-Yu KU ,  Chi-Ming YANG ,  Chin-Hsiang LIN

发明人： Chun-Lin CHANG ,  Chih-Hing HWANG ,  Wen-Yu KU ,  Chi-Ming YANG ,  Chin-Hsiang LIN

IPC分类号： H01L21/265 ,  G21K5/00

CPC分类号： H01J37/3171 ,  A61N5/00 ,  G21G5/00 ,  G21K1/14 ,  H01J2237/0044

摘要： An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.

摘要翻译： 一种装置包括用于在使用离子束的离子注入的过程中中和半导体晶片上的正电荷累积的等离子体喷枪。 等离子体喷枪包括两个以上的电弧室，其中每个电弧室被配置为在与半导体晶片相邻的相应区域中产生电子并将其释放到离子束中。

公开(公告)号：US20130270454A1

公开(公告)日：2013-10-17

申请号：US13443994

申请日：2012-04-11

申请人： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Chi-Ming YANG ,  Chin-Hsiang LIN ,  Wen-Yu KU

发明人： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Chi-Ming YANG ,  Chin-Hsiang LIN ,  Wen-Yu KU

IPC分类号： C23C14/48 ,  H01J27/02

CPC分类号： C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/31701

摘要： An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.

摘要翻译： 一种装置包括用于在离子注入过程中提供离子的电离室和电离室内的电子束源装置。 电子束源装置包括具有多个用于在电场下在真空中产生电子的发射器的场致发射阵列。

公开(公告)号：US20120264296A1

公开(公告)日：2012-10-18

申请号：US13086542

申请日：2011-04-14

申请人： Chyi Shyuan CHERN ,  Hsin-Hsien WU ,  Chun-Lin CHANG ,  Hsing-Kuo HSIA ,  Hung-Yi KUO

发明人： Chyi Shyuan CHERN ,  Hsin-Hsien WU ,  Chun-Lin CHANG ,  Hsing-Kuo HSIA ,  Hung-Yi KUO

IPC分类号： H01L21/768

CPC分类号： H01L21/76801 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/76898

摘要： A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.

摘要翻译： 形成贯通硅通孔（TSV）开口的方法包括通过基板形成TSV开口。 使用第一种化学物质去除在TSV开口的侧壁上的衬底的材料的重铸。 TSV开口的侧壁通过基本上除去第一种化学物质的残留物而用第二种化学品清洗。

公开(公告)号：US20130295753A1

公开(公告)日：2013-11-07

申请号：US13463942

申请日：2012-05-04

申请人： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

发明人： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

IPC分类号： H01L21/265 ,  C23C14/48

CPC分类号： H01J37/3171 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3172 ,  H01J2237/12 ,  H01J2237/20228 ,  H01J2237/30477 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764

摘要： A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

公开(公告)号：US20130075623A1

公开(公告)日：2013-03-28

申请号：US13240951

申请日：2011-09-22

申请人： Nai-Han CHENG ,  Chin-Hsiang LIN ,  Chi-Ming YANG ,  Chun-Lin CHANG ,  Chih-Hong HWANG

发明人： Nai-Han CHENG ,  Chin-Hsiang LIN ,  Chi-Ming YANG ,  Chun-Lin CHANG ,  Chih-Hong HWANG

IPC分类号： H01J3/14 ,  G21K5/10

CPC分类号： H01J37/3171 ,  G21K5/00 ,  H01J3/14 ,  H01J37/05 ,  H01J37/147

摘要： An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.

摘要翻译： 公开了一种多离子束注入装置和方法。 示例性装置包括发射至少两个离子束的离子束源; 离子束分析仪; 和多离子束角度入射控制系统。 离子束分析仪和多离子束角入射控制系统被配置为将发射的至少两个离子束引导到晶片。