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1.发明申请公开(公告)号：US20130270454A1
公开(公告)日：2013-10-17
申请号：US13443994
申请日：2012-04-11
申请人： Chih-Hong HWANG , Chun-Lin CHANG , Chi-Ming YANG , Chin-Hsiang LIN , Wen-Yu KU
发明人： Chih-Hong HWANG , Chun-Lin CHANG , Chi-Ming YANG , Chin-Hsiang LIN , Wen-Yu KU
CPC分类号： C23C14/48 , H01J27/08 , H01J37/08 , H01J2237/082 , H01J2237/31701
摘要： An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.
摘要翻译： 一种装置包括用于在离子注入过程中提供离子的电离室和电离室内的电子束源装置。 电子束源装置包括具有多个用于在电场下在真空中产生电子的发射器的场致发射阵列。
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2.发明申请公开(公告)号：US20130264498A1
公开(公告)日：2013-10-10
申请号：US13439124
申请日：2012-04-04
申请人： Chun-Lin CHANG , Chih-Hing HWANG , Wen-Yu KU , Chi-Ming YANG , Chin-Hsiang LIN
发明人： Chun-Lin CHANG , Chih-Hing HWANG , Wen-Yu KU , Chi-Ming YANG , Chin-Hsiang LIN
IPC分类号： H01L21/265 , G21K5/00
CPC分类号： H01J37/3171 , A61N5/00 , G21G5/00 , G21K1/14 , H01J2237/0044
摘要： An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.
摘要翻译： 一种装置包括用于在使用离子束的离子注入的过程中中和半导体晶片上的正电荷累积的等离子体喷枪。 等离子体喷枪包括两个以上的电弧室，其中每个电弧室被配置为在与半导体晶片相邻的相应区域中产生电子并将其释放到离子束中。
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3.发明申请公开(公告)号：US20130295753A1
公开(公告)日：2013-11-07
申请号：US13463942
申请日：2012-05-04
IPC分类号： H01L21/265 , C23C14/48
CPC分类号： H01J37/3171 , H01J37/1474 , H01J37/20 , H01J37/3023 , H01J37/3172 , H01J2237/12 , H01J2237/20228 , H01J2237/30477 , H01J2237/30483 , H01L21/265 , H01L21/68764
摘要： A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.
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公开(公告)号：US20130075623A1
公开(公告)日：2013-03-28
申请号：US13240951
申请日：2011-09-22
CPC分类号： H01J37/3171 , G21K5/00 , H01J3/14 , H01J37/05 , H01J37/147
摘要： An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.
摘要翻译： 公开了一种多离子束注入装置和方法。 示例性装置包括发射至少两个离子束的离子束源; 离子束分析仪; 和多离子束角度入射控制系统。 离子束分析仪和多离子束角入射控制系统被配置为将发射的至少两个离子束引导到晶片。
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公开(公告)号：US20120086075A1
公开(公告)日：2012-04-12
申请号：US13327992
申请日：2011-12-16
申请人： Kuo Bin HUANG , Ssu-Yi LI , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
发明人： Kuo Bin HUANG , Ssu-Yi LI , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
IPC分类号： H01L27/088
CPC分类号： H01L21/823842 , H01L21/28079 , H01L21/28088 , H01L21/28247 , H01L29/4958 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.
摘要翻译： 具有金属栅极结构的半导体结构包括具有第一栅极的第一型场效应晶体管，包括：基板上的高k电介质材料，高k电介质材料层上的第一金属层，具有第一功函数，以及 在第一金属层上的第一铝层。 第一铝层包括包含铝，氮和氧的界面层。 该器件还包括具有第二栅极的第二类场效应晶体管，其包括：衬底上的高k电介质材料，高k电介质材料层上的第二金属层，具有不同于第一功函数的第二功函数， 和在第二金属层上的第二铝层。
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公开(公告)号：US20120064715A1
公开(公告)日：2012-03-15
申请号：US13302520
申请日：2011-11-22
IPC分类号： H01L21/26
CPC分类号： H01L29/78 , C23C14/022 , C23C14/046 , C23C14/18 , C23C14/221 , C23C16/0263 , C23C16/045 , C23C16/06 , C23C16/48 , C23C16/484 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76865 , H01L21/76877 , H01L29/4966 , H01L29/66545
摘要： A method of depositing a metal film on a substrate with patterned features includes placing a substrate with patterned features into a photo-induced chemical vapor deposition (PI-CVD) process chamber. The method also includes depositing a metal film by PI-CVD to fill the patterned features from bottom up.
摘要翻译： 在具有图案特征的基板上沉积金属膜的方法包括将具有图案化特征的基板放置在光致化学气相沉积（PI-CVD）处理室中。 该方法还包括通过PI-CVD沉积金属膜以从下向上填充图案化特征。
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公开(公告)号：US20130280922A1
公开(公告)日：2013-10-24
申请号：US13449721
申请日：2012-04-18
申请人： Chin-Ming LIN , Wan-Lai CHEN , Chia-Hung HUANG , Chi-Ming YANG , Chin-Hsiang LIN
发明人： Chin-Ming LIN , Wan-Lai CHEN , Chia-Hung HUANG , Chi-Ming YANG , Chin-Hsiang LIN
CPC分类号： H01L21/681 , H01L21/268 , H01L21/67282 , H01L21/683 , H01L23/544 , H01L2223/54426 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： A method of orienting a semiconductor wafer. The method includes rotating a wafer about a central axis; exposing a plurality of edge portions of the rotating wafer to light having a predetermined wavelength from one or more light sources; detecting a subsurface mark in one of the plurality of edge portions of the rotating wafer; and orienting the wafer using the detected subsurface mark as a reference.
摘要翻译： 一种定向半导体晶片的方法。 该方法包括围绕中心轴旋转晶片; 将旋转晶片的多个边缘部分暴露于来自一个或多个光源的具有预定波长的光; 检测所述旋转晶片的所述多个边缘部分之一中的地下标记; 并使用检测到的地下标记作为参考来定向晶片。
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8.发明申请公开(公告)号：US20130052813A1
公开(公告)日：2013-02-28
申请号：US13221214
申请日：2011-08-30
申请人： Ming-Hsi YEH , Chun-Yi LEE , Chi-Ming YANG , Chin-Hsiang LIN
发明人： Ming-Hsi YEH , Chun-Yi LEE , Chi-Ming YANG , Chin-Hsiang LIN
IPC分类号： H01L21/425
CPC分类号： H01L21/823431 , H01L21/28255 , H01L21/28264 , H01L29/513 , H01L29/517
摘要： Provided is a method and structure for utilizing advance channel substrate materials in semiconductor manufacturing. Advanced channel substrate materials such as germanium and Group III-V channel substrate materials, are advantageously utilized. One or more capping films including at least a nitride layer are formed over the channel substrate prior to patterning, ion implantation and the subsequent stripping and wet cleaning operations. With the capping layers intact during these operations, attack of the channel substrate material is prevented and the protective films are easily removed subsequently. The films are dimensioned in conjunction with the ion implantation operation to enable the desired dopant profile and concentration to be formed in the channel substrate material.
摘要翻译： 提供了一种在半导体制造中利用前置沟道衬底材料的方法和结构。 可以有利地利用诸如锗和III-V族通道衬底材料的高级通道衬底材料。 在图案化，离子注入和随后的剥离和湿式清洗操作之前，在沟道基底上方形成至少包含至少氮化物层的一个或多个封盖膜。 在这些操作期间，封盖层完好无损，防止了通道衬底材料的侵蚀，随后保护膜很容易被去除。 这些膜的尺寸与离子注入操作相结合，使得能够在通道衬底材料中形成所需的掺杂剂分布和浓度。
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公开(公告)号：US20130023094A1
公开(公告)日：2013-01-24
申请号：US13189108
申请日：2011-07-22
申请人： Ming-Hsi YEH , Hsien-Hsin LIN , Ying-Hsueh CHANG CHIEN , Yi-Fang PAI , Chi-Ming YANG , Chin-Hsiang LIN
发明人： Ming-Hsi YEH , Hsien-Hsin LIN , Ying-Hsueh CHANG CHIEN , Yi-Fang PAI , Chi-Ming YANG , Chin-Hsiang LIN
IPC分类号： H01L21/8238 , H01L21/8234 , H01L21/336
CPC分类号： H01L29/665 , H01L21/823807 , H01L21/823814 , H01L21/823864 , Y10S438/976
摘要： A method for fabricating an integrated device is disclosed. A protective layer is formed over a gate structure when forming epitaxial (epi) features adjacent to another gate structure uncovered by the protective layer. The protective layer is thereafter removed after forming the epitaxial (epi) features. The disclosed method provides an improved method for removing the protective layer without substantial defects resulting. In an embodiment, the improved formation method is achieved by providing a protector over an oxide-base material, and then removing the protective layer using a chemical comprising hydrofluoric acid.
摘要翻译： 公开了一种用于制造集成器件的方法。 当形成与由保护层未覆盖的另一个栅极结构相邻的外延（epi）特征时，在栅极结构上形成保护层。 此后，在形成外延（epi）特征之后，去除保护层。 所公开的方法提供了用于去除保护层而没有实质缺陷的改进方法。 在一个实施方案中，改进的形成方法通过在氧化物基材料上提供保护剂，然后使用包含氢氟酸的化学品除去保护层来实现。
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公开(公告)号：US20130171336A1
公开(公告)日：2013-07-04
申请号：US13338885
申请日：2011-12-28
IPC分类号： C23C16/458 , B23Q7/00 , C23C14/50 , C23C16/52 , C23C14/54
CPC分类号： H01L21/68785 , C23C14/50 , C23C14/54 , C23C16/4582 , C23C16/52 , H01L21/67098 , H01L21/67288 , H01L21/6831 , Y10T29/49998
摘要： In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.
摘要翻译： 在晶片处理方法和晶片处理系统中，测量晶片背面的第一特性。 晶片的背面被支撑在具有可控夹紧力的多个区域的多区域卡盘上。 通过根据区域中的第一属性的测量值控制相应区域中的夹紧力将晶片固定到多区域卡盘。
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