利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

44 条记录 (耗时 0.037 秒)

    Display substrate, method of manufacturing the same
    1.
    发明授权
    Display substrate, method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号：US09570621B2

    公开(公告)日：2017-02-14

    申请号：US12977853

    申请日：2010-12-23

    申请人： Ki-Hun Jeong ,  Do-Hyun Kim ,  Dong-Hoon Lee ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Sung-Hoon Yang ,  Pil-Sang Yun ,  Seung-Mi Seo

    发明人： Ki-Hun Jeong ,  Do-Hyun Kim ,  Dong-Hoon Lee ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Sung-Hoon Yang ,  Pil-Sang Yun ,  Seung-Mi Seo

    IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78633

    摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

    摘要翻译： 本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 与所述氧化物半导体层的沟道区域重叠的保护层; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 漏电极，与所述氧化物半导体层的第二侧接触，并跨过所述沟道区面对所述源电极; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

    Photonic sensor, method of manufacturing same, color filter substrate having same, and display device having the color filter substrate
    5.
    发明授权
    Photonic sensor, method of manufacturing same, color filter substrate having same, and display device having the color filter substrate 有权
    光电传感器，其制造方法，具有该滤光器基板的滤色器基板以及具有滤色器基板的显示装置

    公开(公告)号：US08253896B2

    公开(公告)日：2012-08-28

    申请号：US12898250

    申请日：2010-10-05

    申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung-Mi Seo

    发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung-Mi Seo

    IPC分类号： G02F1/1335

    CPC分类号： H01L27/1446 ,  B82Y15/00 ,  B82Y20/00 ,  G02B5/201 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.

    摘要翻译： 光子传感器包括第一电极层，第二电极层，第三电极层，第一光子吸收层，第二光子吸收层，第三光子吸收层和电荷阻挡层。 第一光子吸收层包括第一纳米颗粒的分散体，并且被配置为将第一有色光转换成相应的电荷。 第二光子吸收层包括第二纳米颗粒的分散体，并且被配置为根据光强度将第二有色光转换成相应的电荷。 第三光子吸收层包括第三纳米颗粒的分散体，并且被配置为根据光强度将第三有色光转换成相应的电荷。 电荷阻挡层形成在第一和第二光子吸收层之间以阻止第一和第二光子吸收层之间的电荷流动。