Organic thin film transistor array panel and method of manufacturing the same
    2.
    发明授权
    Organic thin film transistor array panel and method of manufacturing the same 失效
    有机薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US08293569B2

    公开(公告)日:2012-10-23

    申请号:US12889613

    申请日:2010-09-24

    IPC分类号: H01L51/40

    摘要: An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.

    摘要翻译: 有机薄膜晶体管(TFT)阵列面板包括基板,沿第一方向延伸的栅极线,与栅极线交叉并与栅极线绝缘的第二方向延伸的数据线,连接到数据线的源电极, 面向源电极的漏电极,连接到漏电极的像素电极以及连接到源极和漏电极的有机半导体,由具有感光性的有机材料制成的有机半导体。

    Organic thin film transistor array panel and manufacturing method thereof
    3.
    发明授权
    Organic thin film transistor array panel and manufacturing method thereof 有权
    有机薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US08039296B2

    公开(公告)日:2011-10-18

    申请号:US12911621

    申请日:2010-10-25

    IPC分类号: H01L51/40

    摘要: An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.

    摘要翻译: 根据本发明实施例的有机薄膜晶体管阵列面板包括:基板; 设置在所述基板上的数据线; 绝缘层,设置在所述数据线上并具有暴露所述数据线的接触孔; 第一电极,设置在绝缘层上并通过接触孔连接到数据线; 设置在所述绝缘层上的第二电极; 布置在第一和第二电极上的有机半导体; 设置在所述有机半导体上的栅极绝缘体; 以及设置在栅极绝缘体上的栅电极。

    Stripping composition for removing a photoresist and method of manufacturing TFT substrate for a liquid crystal display device using the same
    4.
    发明授权
    Stripping composition for removing a photoresist and method of manufacturing TFT substrate for a liquid crystal display device using the same 有权
    用于除去光致抗蚀剂的剥离组合物及使用其的液晶显示装置的TFT基板的制造方法

    公开(公告)号:US07879725B2

    公开(公告)日:2011-02-01

    申请号:US10538511

    申请日:2003-12-05

    IPC分类号: H01L21/311

    摘要: In a stripping composition for easily removing a photoresist without an adverse effect and a method of manufacturing a TFT substrate for an LCD device using the same, the stripping composition includes acetic acid and ozone gas contained in the acetic acid as a bubble form to remove the photoresist including novolak. A photoresist pattern including novolak is formed on a predetermined layer (24) formed on a substrate (10). The layer is etched using the photoresist pattern as a mask to form a pattern of the layer. The photoresist pattern is removed using the stripping composition. The stripping composition is cheap and more effectively protects the environment in comparison with the conventional stripping compositions. Additionally, an O2 ashing process performed before or after a stripping process may be omitted to thereby simplify a stripping process.

    摘要翻译: 在用于容易除去不影响光致抗蚀剂的剥离组合物和使用其的LCD装置的TFT基板的制造方法中,汽提组合物包括作为气泡形式的乙酸中包含的乙酸和臭氧气体,以除去 光致抗蚀剂包括酚醛清漆。 在形成在基板(10)上的预定层(24)上形成包括酚醛清漆的光致抗蚀剂图案。 使用光致抗蚀剂图案作为掩模蚀刻该层以形成该层的图案。 使用剥离组合物除去光刻胶图案。 与常规汽提组合物相比,汽提组合物便宜并且更有效地保护环境。 此外,可以省略在汽提过程之前或之后进行的氧化灰化过程,从而简化汽提过程。

    Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
    5.
    发明授权
    Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same 有权
    电线的接触结构及其制造方法,以及包括接触结构的薄膜晶体管基板及其制造方法

    公开(公告)号:US07659625B2

    公开(公告)日:2010-02-09

    申请号:US12333973

    申请日:2008-12-12

    IPC分类号: H01L23/48

    摘要: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.

    摘要翻译: 在制造用于液晶显示器的薄膜晶体管阵列基板的方法中,栅极线组件在沿水平方向前进的基底上形成有铬基底层和基于铝合金的超层。 栅极线组件具有栅极线,栅电极和栅极焊盘。 栅极绝缘层沉积在绝缘基板上,使得栅极绝缘层覆盖栅极线组件。 在栅极绝缘层上依次形成半导体层和欧姆接触层。 数据线组件在欧姆接触层上形成有铬基底层和基于铝合金的超层。 数据线组件具有跨越栅极线,源电极,漏电极和数据焊盘的数据线。 保护层沉积到衬底上,并被图案化,从而形成露出漏电极,栅极焊盘和数据焊盘的接触孔。 用于栅极线组件和数据线组件的下层的侧壁通过接触孔暴露。 将基于IZO的层沉积到衬底上并构图,从而形成像素电极,辅助栅极焊盘和辅助数据焊盘。 像素电极连接到漏电极的侧壁,辅助栅极和数据焊盘连接到栅极和数据焊盘的侧壁。

    DISPLAY DEVICE AND DRIVING APPARATUS AND METHOD THEREOF
    6.
    发明申请
    DISPLAY DEVICE AND DRIVING APPARATUS AND METHOD THEREOF 审中-公开
    显示装置及驱动装置及其方法

    公开(公告)号:US20090244111A1

    公开(公告)日:2009-10-01

    申请号:US12480960

    申请日:2009-06-09

    IPC分类号: G09G5/10

    摘要: A data processor receives sets of input image data having respective input grays and outputs sets of output image data having respective output grays. Each set of output image data corresponds to one of the plurality of sets of input image data and have more image data than each set of the input image data. A data driver supplies the pixels with data voltages corresponding to the output image data supplied from the data processor. A set of output grays corresponding to a set of input grays are selected from sets of grays, each set of grays giving an average front transmittance substantially equal to an average front transmittance of the set of input grays. The sets of output grays generate the closest average lateral gamma curve generated by the sets of grays relative to an average front gamma curve generated by the input grays.

    摘要翻译: 数据处理器接收具有各个输入灰度的输入图像数据组,并输出具有各自输出灰度的输出图像数据组。 每组输出图像数据对应于多组输入图像数据中的一组,并且具有比每组输入图像数据更多的图像数据。 数据驱动器向像素提供与从数据处理器提供的输出图像数据相对应的数据电压。 从灰度组中选择与一组输入灰度相对应的一组输出灰度,每组灰度给出基本上等于输入灰度组的平均前透射率的平均前透射率。 输出灰度组相对于由输入灰度产生的平均前伽马曲线产生由灰度组生成的最接近的平均横向伽马曲线。

    Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
    7.
    发明授权
    Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same 有权
    一种用于液晶显示器的薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07504290B2

    公开(公告)日:2009-03-17

    申请号:US11750630

    申请日:2007-05-18

    IPC分类号: H01L21/84

    摘要: Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.

    摘要翻译: 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。

    Thin film transistor array panel and liquid crystal display
    8.
    发明授权
    Thin film transistor array panel and liquid crystal display 有权
    薄膜晶体管阵列面板和液晶显示器

    公开(公告)号:US07332743B2

    公开(公告)日:2008-02-19

    申请号:US11224103

    申请日:2005-09-13

    IPC分类号: H01L31/00

    摘要: A thin film transistor array panel is provided, which includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer covering the gate line, a data line formed on the gate insulating layer, a lower passivation layer covering the data line, an upper passivation layer formed on the lower passivation layer and made of organic insulating material, and a pixel electrode formed on the upper passivation layer. The thicknesses of the gate insulating layer, the lower passivation layer, and the pixel electrode are respectively represented as dG, dP, and dI, the refraction indexes of the gate insulating layer, the passivation layer, and the pixel electrode are respectively represented as nG, nP, and nI, and condition equations are satisfied according to: 4(dGnG+dPnP)=, which is an even multiple of the wavelength; and 4dInI=, which is an even multiple of the wavelength.

    摘要翻译: 提供薄膜晶体管阵列面板,其包括绝缘基板,形成在绝缘基板上的栅极线,覆盖栅极线的栅极绝缘层,形成在栅极绝缘层上的数据线,覆盖该数据的下部钝化层 形成在下钝化层上并由有机绝缘材料制成的上钝化层,以及形成在上钝化层上的像素电极。 栅绝缘层,下钝化层和像素电极的厚度分别表示为d,G,D,P, >,栅极绝缘层,钝化层和像素电极的折射率分别表示为n N,N,N, / SUB>,并且根据以下条件满足条件方程式:4(d> G N n + P<< >)=,这是波长的偶数倍; 和4d I I,其为波长的偶数倍。

    Common electrode panel, manufacturing method thereof, and liquid crystal display including the panel
    10.
    发明申请
    Common electrode panel, manufacturing method thereof, and liquid crystal display including the panel 失效
    普通电极面板及其制造方法以及包括该面板的液晶显示器

    公开(公告)号:US20070019142A1

    公开(公告)日:2007-01-25

    申请号:US11454282

    申请日:2006-06-16

    IPC分类号: G02F1/1333

    摘要: A liquid crystal display includes a common electrode panel having a first substrate, a color filter formed on the substrate and having a light hole, a common electrode formed on the color filter and into the light hole, a first insulating film formed on the common electrode and formed into the light hole, a thin film transistor (TFT) panel facing the common electrode panel, and a liquid crystal layer interposed between the common electrode panel and the TFT panel. The TFT panel includes a second substrate, a transmissive electrode formed on the second substrate, and a reflective electrode formed on the second substrate and connected to the transmissive electrode.

    摘要翻译: 液晶显示器包括:公共电极板,具有第一基板,形成在基板上的具有光孔的滤色器,形成在滤色器上的公共电极和光孔;第一绝缘膜,形成在公共电极上 并形成为光孔,面对公共电极面板的薄膜晶体管(TFT)面板以及介于公共电极面板与TFT面板之间的液晶层。 TFT面板包括第二基板,形成在第二基板上的透射电极和形成在第二基板上并连接到透射电极的反射电极。