公开(公告)号：US06373708B1

公开(公告)日：2002-04-16

申请号：US09373722

申请日：1999-08-13

申请人： Kimiaki Ando ,  Takehiro Ohkawa ,  Kazuo Kaneko

发明人： Kimiaki Ando ,  Takehiro Ohkawa ,  Kazuo Kaneko

IPC分类号： H05K114

CPC分类号： G06K19/07779 ,  G06K19/07749 ,  G06K19/07783 ,  H05K1/16

摘要： The pattern line width of a coil is partially widened in a predetermined dimension and wiring patterns of a coil on the surface side and a coil on the rear side are arranged so as not to be in overlapped positions. Consequently, a direct current resistance of the coil can be reduced and an adverse influence by a self resonance of the coil on a communication can be reduced.

摘要翻译： 线圈的图案线宽度以预定尺寸部分地变宽，并且表面侧的线圈的布线图案和后侧的线圈被布置成不处于重叠位置。 因此，可以减小线圈的直流电阻，并且可以减少线圈对通信的自谐振的不利影响。

公开(公告)号：US5999409A

公开(公告)日：1999-12-07

申请号：US10184

申请日：1998-01-21

申请人： Kimiaki Ando ,  Takehiro Ohkawa ,  Kazuo Kaneko

发明人： Kimiaki Ando ,  Takehiro Ohkawa ,  Kazuo Kaneko

IPC分类号： B42D15/10 ,  G06K19/07 ,  G06K19/077 ,  H04B5/02 ,  H05K1/16 ,  H05K1/14 ,  G06K19/067 ,  H01Q1/36

CPC分类号： G06K19/07779 ,  G06K19/07749 ,  G06K19/07783 ,  H05K1/16

摘要： The pattern line width of a coil is partially widened in a predetermined dimension and wiring patterns of a coil on the surface side and a coil on the rear side are arranged so as not to be in overlapped positions. Consequently, a direct current resistance of the coil can be reduced and an adverse influence by a self resonance of the coil on a communication can be reduced.

公开(公告)号：US08937714B2

公开(公告)日：2015-01-20

申请号：US13520460

申请日：2010-12-08

申请人： Kimiaki Ando ,  Hiroshi Kikuchi ,  Yuji Inoue

发明人： Kimiaki Ando ,  Hiroshi Kikuchi ,  Yuji Inoue

IPC分类号： G01N21/00 ,  G01N21/95 ,  G01N21/47 ,  G01N21/94 ,  H01L21/66

CPC分类号： G01N21/9501 ,  G01N21/47 ,  G01N21/94 ,  H01L22/12

摘要： Provided is a method wherein a multi-anode detector is used for the purpose of detecting scattered light from a wafer, data obtained from the detector (multi-anode) for detecting defects is used, the shape of a beam radiated to the wafer, a rotational shift between the radius direction and the beam long side, and the like are calculated, and the optical axis of the irradiation beam is adjusted. Furthermore, the method is provided with a technique which feeds back the correction quantities for rotation and amplitude to inspection signal data, on the basis of the correction data, and corrects inspection data. Since fine correction with the adjustment of an optics system and signal processing is made possible, positional accuracy of defect inspection and accuracy of defect level (defect size) are improved.

摘要翻译： 提供了一种多阳极检测器用于检测来自晶片的散射光的方法，使用从用于检测缺陷的检测器（多阳极）获得的数据，辐射到晶片的光束的形状， 计算半径方向与光束长边之间的旋转偏移等，并调整照射光束的光轴。 此外，该方法具有基于校正数据将检查信号数据的旋转和振幅校正量反馈并校正检查数据的技术。 由于通过光学系统的调整和信号处理的精细校正成为可能，故缺陷检查的位置精度和缺陷水平（缺陷尺寸）的精度提高。

公开(公告)号：US08008622B2

公开(公告)日：2011-08-30

申请号：US12630346

申请日：2009-12-03

申请人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： H01J37/26

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US06172363B2

公开(公告)日：2001-01-09

申请号：US08811511

申请日：1997-03-04

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： H01J37244

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

公开(公告)号：US07952074B2

公开(公告)日：2011-05-31

申请号：US12190388

申请日：2008-08-12

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01N23/22

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 因此，电路图案检查方法和其中待检查的样品的待检查部分的整体被制成处于预定的改变状态的装置，被检查部分被成像高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US20100078556A1

公开(公告)日：2010-04-01

申请号：US12630378

申请日：2009-12-03

申请人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： G01N23/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US07635851B2

公开(公告)日：2009-12-22

申请号：US11519872

申请日：2006-09-13

申请人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： H01J37/08

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US20060033050A1

公开(公告)日：2006-02-16

申请号：US11251807

申请日：2005-10-18

申请人： Kimiaki Ando ,  Haruo Yoda ,  Rikio Tomiyoshi ,  Masamichi Kawano

发明人： Kimiaki Ando ,  Haruo Yoda ,  Rikio Tomiyoshi ,  Masamichi Kawano

IPC分类号： G21K5/10

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/31776

摘要： In the case of drawing an oblique figure pattern, when drawing an oblique figure by using a slender rectangular beam, a problem occurs that edge roughness occurs at an oblique-side portion to deteriorate the drawing accuracy. The present invention solves the above problem and provides an electron-beam drawing apparatus and an electron-beam drawing method capable of accurately drawing even an oblique figure. A first rectangular aperture and a second parallelogrammatic aperture are used and a variable parallelogrammatic electron beam formed by two apertures is used to draw a desired pattern on the surface of a sample. Moreover, oblique-side-portion-contour decomposition means is used to draw an oblique-side portion by a variable parallelogram and the inside of an oblique side by a triangle and a quadrangle (rectangle).

摘要翻译： 在绘制斜图形图形的情况下，当使用细长矩形波束绘制斜图时，会出现在倾斜侧部分发生边缘粗糙度以降低绘图精度的问题。 本发明解决了上述问题，并且提供了能够精确地绘制斜图的电子束描绘装置和电子束描绘方法。 使用第一矩形孔和第二平行四边形孔，并且使用由两个孔形成的可变平行四边形电子束来在样品的表面上画出期望的图案。 此外，倾斜侧部分轮廓分解装置用于通过可变的平行四边形和斜边的内侧以三角形和四边形（矩形）绘制斜侧部分。

公开(公告)号：US06403973B1

公开(公告)日：2002-06-11

申请号：US09498617

申请日：2000-02-07

申请人： Hiroyuki Takahashi ,  Masahide Okumura ,  Koji Nagata ,  Kimiaki Ando

发明人： Hiroyuki Takahashi ,  Masahide Okumura ,  Koji Nagata ,  Kimiaki Ando

IPC分类号： H01J3730

CPC分类号： H01J37/304 ,  H01J2237/3045 ,  H01J2237/3175

摘要： The present invention provides an electron beam exposure method and an exposure apparatus suitable for use in the electron beam exposure technology for performing exposure on a sample placed on a sample table by an electron beam while continuously moving the sample table, both of which are capable of performing high-accuracy and high-speed exposure without being affected by glitch noise of a DA converter used for trace deflection of the electron beam. Displacements of the position of the sample table and the position to apply the electron beam are determined and the determined displacements are divided into the amount of a shot synchronous trace and the amount of a real time trace each synchronized with shot timing for applying the electron beam to thereby reduce the amount of the real time trace, whereby degradation in exposure accuracy due to the glitch noise of the DA converter used for trace deflection is prevented from occurring. It is therefore possible to carry out high-accuracy exposure. Since the number of trace region pass-changeovers can be reduced by increasing the range of trace deflection, wasted time can be reduced and hence high-speed exposure is made possible.

摘要翻译： 本发明提供电子束曝光方法和适用于电子束曝光技术的曝光装置，用于在连续移动样品台的同时通过电子束对放置在样品台上的样品进行曝光，两者都能够 执行高精度和高速曝光，而不受用于电子束的迹线偏转的DA转换器的毛刺噪声的影响。 确定样品台的位置和施加电子束的位置的位移，并将所确定的位移分为射击同步轨迹的量和每个与施加电子束的喷射定时同步的实时轨迹的量 从而减少实时迹线的量，从而防止由于用于迹线偏转的DA转换器的毛刺噪声引起的曝光精度的劣化。 因此，可以进行高精度的曝光。 由于可以通过增加迹线偏转的范围来减少迹线区域通过切换的数量，所以可以减少浪费的时间，因此可以实现高速曝光。