公开(公告)号：US20080029764A1

公开(公告)日：2008-02-07

申请号：US11880551

申请日：2007-07-23

申请人： Kiwamu Adachi ,  Satoshi Horiuchi

发明人： Kiwamu Adachi ,  Satoshi Horiuchi

IPC分类号： H01L29/04 ,  H01L21/20 ,  H01L29/00

CPC分类号： H01G4/10 ,  G02F1/136213 ,  H01G4/1254 ,  H01G4/20 ,  H01G4/33 ,  H01L28/40 ,  H01L28/56

摘要： A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.

摘要翻译： 电容器包括依次层叠的第一电极，电介质层和第二电极。 电介质层具有包含规定数量的氧化铪层和预定数量的氧化钽层的堆叠层结构。 确定子层的数量，材料和厚度，使得厚度比具有这样的范围，其中，在表示第一和第二电极之间的电压与漏电流之间的关系的电压 - 漏电流特性中， 当电流增加的斜率开始不连续地增加时，当预定数量的氧化钽层的总厚度与介电层的总厚度的比例达到3 [MV / cm]以上时的电场强度 变化，厚度比在起始电压在该范围内的范围内。

公开(公告)号：US08237242B2

公开(公告)日：2012-08-07

申请号：US11880551

申请日：2007-07-23

申请人： Kiwamu Adachi ,  Satoshi Horiuchi

发明人： Kiwamu Adachi ,  Satoshi Horiuchi

IPC分类号： H01L29/92

CPC分类号： H01G4/10 ,  G02F1/136213 ,  H01G4/1254 ,  H01G4/20 ,  H01G4/33 ,  H01L28/40 ,  H01L28/56

摘要： A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.

摘要翻译： 电容器包括依次层叠的第一电极，电介质层和第二电极。 电介质层具有包含规定数量的氧化铪层和预定数量的氧化钽层的堆叠层结构。 确定子层的数量，材料和厚度，使得厚度比具有这样的范围，其中，在表示第一和第二电极之间的电压与漏电流之间的关系的电压 - 漏电流特性中， 当电流增加的斜率开始不连续地增加时，当预定数量的氧化钽层的总厚度与介电层的总厚度的比例达到3 [MV / cm]以上时的电场强度 变化，厚度比在起始电压在该范围内的范围内。

公开(公告)号：US06916747B2

公开(公告)日：2005-07-12

申请号：US10395389

申请日：2003-03-25

申请人： Kiwamu Adachi ,  Satoshi Horiuchi ,  Tetsuya Yukimoto

发明人： Kiwamu Adachi ,  Satoshi Horiuchi ,  Tetsuya Yukimoto

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/301 ,  H01L21/461

CPC分类号： H01L21/31604 ,  C23C16/405 ,  C23C16/56 ,  H01L28/40

摘要： A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is maintained by a high-density plasma radiation treatment based upon ion and radical reactions, and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film, which is excellent in film quality, can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film, which is excellent in film quality, can be deposited by a low-temperature treatment and a highly-reliable capacitance element and semiconductor device can be manufactured.

摘要翻译： 用于沉积非晶态金属氧化物膜的成膜方法，例如非晶形氧化钽膜，以及用于提高非晶态氧化钽膜的非晶状态的非晶态氧化钽膜的膜质量的膜处理方法 通过基于离子和自由基反应的高密度等离子体辐射处理来维持膜，并且其至少包含离子电流密度高于5mA / cm 2的氧，由此低 整个过程中的温度处理成为可能。 另外，由于可以沉积膜质量优异的非晶金属氧化物膜，所以可以使非晶金属氧化物膜的可靠性高，并且可以廉价地制造。 可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。 此外，当制造具有非晶金属氧化物膜和半导体器件的电容元件时，可以通过低温处理和高可靠性的电容元件和半导体来沉积膜质量优异的非晶态金属氧化物膜 装置可以制造。

公开(公告)号：US07666793B2

公开(公告)日：2010-02-23

申请号：US10998759

申请日：2004-11-30

申请人： Kiwamu Adachi ,  Satoshi Horiuchi ,  Tetsuya Yukimoto

发明人： Kiwamu Adachi ,  Satoshi Horiuchi ,  Tetsuya Yukimoto

IPC分类号： H01L21/00

CPC分类号： H01L21/31604 ,  C23C16/405 ,  C23C16/56 ,  H01L28/40

摘要： A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.

摘要翻译： 用于沉积非晶态金属氧化物膜的成膜方法，例如非晶态氧化钽膜和用于提高非晶态氧化金属膜的非晶态的状态下的非晶态氧化钽膜的膜质量的膜处理方法 通过基于离子和自由基反应的高密度等离子体辐射处理进行维持，并且至少含有离子电流密度高于5mA / cm 2的氧，从而使整个过程中的低温处理成为可能 。 另外，由于可以沉积膜质量优异的非晶金属氧化物膜，所以可以使非晶金属氧化物膜的可靠性高，并且可以廉价地制造。 可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。 此外，当制造具有非晶金属氧化物膜和半导体器件的电容元件时，可以通过低温处理和高度可靠的电容元件来沉积膜质量优异的非晶金属氧化物膜，并且半导体器件可以 制造。

公开(公告)号：US20050095850A1

公开(公告)日：2005-05-05

申请号：US10998759

申请日：2004-11-30

申请人： Kiwamu Adachi ,  Satoshi Horiuchi ,  Tetsuya Yukimoto

发明人： Kiwamu Adachi ,  Satoshi Horiuchi ,  Tetsuya Yukimoto

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/44

CPC分类号： H01L21/31604 ,  C23C16/405 ,  C23C16/56 ,  H01L28/40

摘要： A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.

摘要翻译： 用于沉积非晶态金属氧化物膜的成膜方法，例如非晶态氧化钽膜和用于提高非晶态氧化金属膜的非晶态的状态下的非晶态氧化钽膜的膜质量的膜处理方法 通过基于离子和自由基反应的高密度等离子体辐射处理进行维持，并且至少含有离子电流密度高于5mA / cm 2的氧，由此低温 整个过程中的治疗成为可能。 另外，由于可以沉积膜质量优异的非晶金属氧化物膜，所以可以使非晶金属氧化物膜的可靠性高，并且可以廉价地制造。 可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。 此外，当制造具有非晶金属氧化物膜和半导体器件的电容元件时，可以通过低温处理和高度可靠的电容元件来沉积膜质量优异的非晶金属氧化物膜，并且半导体器件可以 制造。

公开(公告)号：US09293094B2

公开(公告)日：2016-03-22

申请号：US14237677

申请日：2012-08-03

申请人： Hideki Morii ,  Akihisa Iwamoto ,  Satoshi Horiuchi ,  Takayuki Mizunaga ,  Kazuya Nakaminami

发明人： Hideki Morii ,  Akihisa Iwamoto ,  Satoshi Horiuchi ,  Takayuki Mizunaga ,  Kazuya Nakaminami

IPC分类号： G09G3/36

CPC分类号： G09G3/3611 ,  G09G3/3677 ,  G09G2330/027

摘要： The invention provides a liquid crystal display device that includes an IGZO-GDM which can quickly remove a residual charge in a panel when the power supply is turned off, and a driving method of the liquid crystal display device. Each bistable circuit that configures a shift register includes a thin film transistor TI for increasing a potential of an output terminal based on a first clock, a region netA connected to a gate terminal of the thin film transistor TI, a thin film transistor TC for lowering a potential of the region netA, and a region netB connected to a gate terminal of the thin film transistor TC. In such a configuration, a power supply off sequence includes a display off sequence and a gate off sequence. The gate off sequence includes at least a gate-bus-line discharge step (t14 to t15), a netB discharge step (t15 to t16), and a netA discharge step (t16 to t17).

摘要翻译： 本发明提供了一种液晶显示装置，其包括IGART-GDM，其可以在电源关闭时快速去除面板中的残留电荷，以及液晶显示装置的驱动方法。 配置移位寄存器的每个双稳态电路包括用于基于第一时钟增加输出端子的电位的薄膜晶体管TI，连接到薄膜晶体管TI的栅极端子的区域netA，用于降低的薄膜晶体管TC 区域netA的电位和连接到薄膜晶体管TC的栅极端子的区域netB。 在这种配置中，电源断开序列包括显示关闭序列和关闭序列。 栅极截止序列至少包括栅极总线放电步骤（t14至t15），netB放电步骤（t15至t16）和netA放电步骤（t16至t17）。

公开(公告)号：US09036121B2

公开(公告)日：2015-05-19

申请号：US13641949

申请日：2011-02-18

申请人： Ryohki Itoh ,  Yuhko Hisada ,  Satoshi Horiuchi ,  Takaharu Yamada ,  Masahiro Yoshida

发明人： Ryohki Itoh ,  Yuhko Hisada ,  Satoshi Horiuchi ,  Takaharu Yamada ,  Masahiro Yoshida

IPC分类号： G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/136286 ,  G02F1/136209 ,  G02F2001/136218 ,  G02F2201/123

摘要： Picture element electrodes (7) are electrically connected with drain electrodes (18D) of respective transistor elements (18). The picture element electrodes (7) and data signal lines (SLn, SLn+1, . . . ) are provided above scanning signal lines (GLn, GLn+1, . . . ). The picture element electrodes (7) overlap scanning signal lines (GLn, GLn+1, . . . ) when viewed from above. Notch parts 7a and 7b are provided in each picture element electrode (7) so as to overlap each of the scanning signal lines (GLn, GLn+1, . . . ). Shield electrodes (4a, 4b) are formed in the same layer as the data signal lines (SLn, SLn+1, . . . ). Each of the scanning signal lines (GLn, GLn+1, . . . ) at least partially overlaps the shield electrodes (4a, 4b) in the notch parts (7a, 7b), when viewed from above. This provides the liquid crystal display panel having wide viewing angle characteristic and carrying out high quality display.

摘要翻译： 图像元件电极（7）与各个晶体管元件（18）的漏电极（18D）电连接。 像素电极（7）和数据信号线（SLn，SLn + 1 ...）设置在扫描信号线（GLn，GLn + 1 ...）的上方。 当从上方观察时，像素电极（7）与扫描信号线（GLn，GLn + 1 ...）重叠。 在每个像素电极（7）中设置有与部分扫描信号线（GLn，GLn + 1 ...）重合的凹部7a，7b。 屏蔽电极（4a，4b）形成在与数据信号线（SLn，SLn + 1 ...）相同的层中。 当从上方观察时，每个扫描信号线（GLn，GLn + 1，...）至少部分地与凹口部分（7a，7b）中的屏蔽电极（4a，4b）重叠。 这提供了具有宽视角特性的液晶显示面板并进行高质量显示。

公开(公告)号：US08975638B2

公开(公告)日：2015-03-10

申请号：US13976552

申请日：2011-12-22

申请人： Kazuyori Mitsumoto ,  Masahiro Yoshida ,  Satoshi Horiuchi

发明人： Kazuyori Mitsumoto ,  Masahiro Yoshida ,  Satoshi Horiuchi

IPC分类号： G02F1/1343 ,  G06F3/038 ,  G09G5/00 ,  H01L27/105 ,  G02F1/1362

CPC分类号： H01L27/105 ,  G02F1/136213

摘要： The active matrix substrate is provided with: first and second scan lines (20a, 20b) that extend in a first direction; first and second signal lines (30a, 30b) that extend in a second direction; first and second pixels (10a, 10b) that are arranged adjacent to each other along the second direction; an auxiliary capacitor line (40); first and second pixel electrodes (60a, 60b); a first TFT (50a); a second TFT (50b); an auxiliary capacitor electrode (42) that is connected to the auxiliary capacitor line (40) and extends below the first and second pixel electrodes (60a, 60b); a first auxiliary capacitor counter electrode (62a) that is connected to the first pixel electrode (60a); and a second auxiliary capacitor counter electrode (62b) that is connected to the second pixel electrode (60b).

摘要翻译： 有源矩阵基板设置有：沿第一方向延伸的第一和第二扫描线（20a，20b） 第一和第二信号线（30a，30b），其沿第二方向延伸; 沿着第二方向彼此相邻布置的第一和第二像素（10a，10b）; 辅助电容线（40）; 第一和第二像素电极（60a，60b）; 第一TFT（50a）; 第二TFT（50b）; 辅助电容电极（42），与辅助电容线（40）连接并在第一和第二像素电极（60a，60b）的下方延伸; 连接到第一像素电极（60a）的第一辅助电容器对电极（62a）; 以及与第二像素电极（60b）连接的第二辅助电容对置电极（62b）。

公开(公告)号：US08941185B2

公开(公告)日：2015-01-27

申请号：US13982569

申请日：2012-02-02

申请人： Yoshihiro Asai ,  Satoshi Horiuchi ,  Kazuyori Mitsumoto

发明人： Yoshihiro Asai ,  Satoshi Horiuchi ,  Kazuyori Mitsumoto

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/088 ,  H01L27/146

CPC分类号： H01L27/088 ,  G02F1/136204 ,  G02F1/136286 ,  H01L27/1244 ,  H01L27/14605 ,  H01L27/14658 ,  H01L27/3276

摘要： An active matrix substrate of the present invention includes: a first signal line and a second signal line which are aligned in a column direction in which the first signal line and the second signal line extend; a first transistor and a second transistor; and a first electrode and a second electrode, the first signal line being connected via the first transistor to the first electrode, and the second signal line being connected via the second transistor to the second electrode, and the first signal line having a first end which is one of both ends of the first signal line and faces the second signal line, the first end including a tapered part which is tapered toward the second signal line. This makes it possible to prevent a leakage defect from occurring between two signal lines which are aligned in a direction in which the two signal lines extend.

摘要翻译： 本发明的有源矩阵基板包括：在第一信号线和第二信号线延伸的列方向上排列的第一信号线和第二信号线; 第一晶体管和第二晶体管; 以及第一电极和第二电极，所述第一信号线经由所述第一晶体管连接到所述第一电极，所述第二信号线经由所述第二晶体管连接到所述第二电极，并且所述第一信号线具有第一端， 是第一信号线的两端之一并且面向第二信号线，第一端包括朝向第二信号线逐渐变细的锥形部分。 这使得可以防止在两个信号线延伸的方向上排列的两个信号线之间发生泄漏缺陷。

公开(公告)号：US08735887B2

公开(公告)日：2014-05-27

申请号：US13701112

申请日：2011-05-18

申请人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Yuhko Hisada ,  Satoshi Horiuchi

发明人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Yuhko Hisada ,  Satoshi Horiuchi

IPC分类号： G01N27/414

CPC分类号： G01N27/4141

摘要： The present invention provides an ion sensor with which an ion concentration can be stably measured with high accuracy, and a display device. The present invention is an ion sensor that includes a field effect transistor. The ion sensor also includes an ion sensor antenna and a reset device. The ion sensor antenna and the reset device are connected to a gate electrode of the field effect transistor. The reset device is capable of controlling the potential of the gate electrode and the ion sensor antenna to a predetermined potential.

摘要翻译： 本发明提供一种能够以高精度稳定地测量离子浓度的离子传感器和显示装置。 本发明是一种包括场效应晶体管的离子传感器。 离子传感器还包括离子传感器天线和复位装置。 离子传感器天线和复位装置连接到场效应晶体管的栅电极。 复位装置能够将栅电极和离子传感器天线的电位控制到预定电位。