公开(公告)号：US20110254538A1

公开(公告)日：2011-10-20

申请号：US13085606

申请日：2011-04-13

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

IPC分类号： G01R19/00

CPC分类号： G01R31/2601 ,  G01R19/0092

摘要： One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.

摘要翻译： 一个目的是提供一种用于测量可以测量微小电流的电流的方法。 流过电气元件的电流的值不是直接测量的，而是根据在预定周期内观察到的电位的变化计算出的。 用于测量电流的方法包括以下步骤：将预定电位施加到具有第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据所述电位变化量计算在所述电气元件的所述第一端子和所述第二端子之间流动的电流值。 因此，可以测量微小电流的值。

公开(公告)号：US08552712B2

公开(公告)日：2013-10-08

申请号：US13085606

申请日：2011-04-13

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

IPC分类号： G01R19/00 ,  G01R13/04

CPC分类号： G01R31/2601 ,  G01R19/0092

摘要： One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.

摘要翻译： 一个目的是提供一种用于测量可以测量微小电流的电流的方法。 流过电气元件的电流的值不是直接测量的，而是根据在预定周期内观察到的电位的变化计算出的。 用于测量电流的方法包括以下步骤：将预定电位施加到具有第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据所述电位变化量计算在所述电气元件的所述第一端子和所述第二端子之间流动的电流值。 因此，可以测量微小电流的值。

公开(公告)号：US08809851B2

公开(公告)日：2014-08-19

申请号：US13101644

申请日：2011-05-05

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  G11C16/0433 ,  G11C16/26 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/41733 ,  H01L29/78621

摘要： A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided.

摘要翻译： 提供了包括在第一晶体管之上的第一晶体管和第二晶体管和电容器的半导体器件。 第二晶体管的半导体层包括偏移区域。 在设置有偏移区域的第二晶体管中，可以减小第二晶体管的截止电流。 因此，可以提供能够长时间保持数据的半导体器件。

公开(公告)号：US20110278571A1

公开(公告)日：2011-11-17

申请号：US13101644

申请日：2011-05-05

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  G11C16/0433 ,  G11C16/26 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/41733 ,  H01L29/78621

摘要： A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided.

摘要翻译： 提供了包括在第一晶体管之上的第一晶体管和第二晶体管和电容器的半导体器件。 第二晶体管的半导体层包括偏移区域。 在设置有偏移区域的第二晶体管中，可以减小第二晶体管的截止电流。 因此，可以提供能够长时间保持数据的半导体器件。

公开(公告)号：US20110175083A1

公开(公告)日：2011-07-21

申请号：US13004200

申请日：2011-01-11

申请人： Yusuke Sekine ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Shunpei Yamazaki

发明人： Yusuke Sekine ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Shunpei Yamazaki

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/1052 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225

摘要： A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state (off-state current) between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or to the memory cell by applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another so that the predetermined amount of charge is held in the node. The memory window width is changed by 2% or less, before and after 1×109 times of writing.

摘要翻译： 半导体器件具有包括写入晶体管的非易失性存储单元，该晶体管包括氧化物半导体，并且在源极和漏极之间的截止状态（截止状态电流）中具有小的漏电流，读取晶体管包括不同于 写晶体管和电容器。 通过向写入晶体管的源电极和漏电极，电容器的一个电极和读取晶体管的栅电极之一彼此电连接的节点施加电位而将数据写入或存储到存储器单元，从而 在节点中保持预定量的电荷。 1×109次写入之前和之后，存储窗宽度改变2％以下。

公开(公告)号：US20110148455A1

公开(公告)日：2011-06-23

申请号：US12967230

申请日：2010-12-14

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri

IPC分类号： G01R31/26 ,  G01R19/00 ,  G01R27/26

CPC分类号： G01R31/275 ,  G01R19/0092 ,  G01R31/2884 ,  G09G3/20 ,  G09G2320/029

摘要： An object is to provide a current measurement method which enables a minute current to be measured. To achieve this, the value of a current flowing through an electrical element is not directly measured, but is calculated from a change in potential observed in a predetermined period. The detection of a minute current can be achieved by a measurement method including the steps of applying a predetermined potential to a first terminal of an electrical element comprising the first terminal and a second terminal; measuring an amount of change in potential of a node connected to the second terminal; and calculating, from the amount of change in potential, a value of a current flowing between the first terminal and the second terminal of the electrical element.

摘要翻译： 目的在于提供能够测量微小电流的电流测量方法。 为了实现这一点，不直接测量流过电气元件的电流的值，而是根据在预定周期内观察到的电位变化来计算。 可以通过测量方法来实现微小电流的检测，包括以下步骤：将预定电位施加到包括第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据电位变化量计算在电气元件的第一端子和第二端子之间流动的电流的值。

公开(公告)号：US09057758B2

公开(公告)日：2015-06-16

申请号：US12967230

申请日：2010-12-14

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri

IPC分类号： G01R31/02 ,  G01R31/27 ,  G01R19/00 ,  G01R31/28 ,  G09G3/20

CPC分类号： G01R31/275 ,  G01R19/0092 ,  G01R31/2884 ,  G09G3/20 ,  G09G2320/029

摘要： An object is to provide a current measurement method which enables a minute current to be measured. To achieve this, the value of a current flowing through an electrical element is not directly measured, but is calculated from a change in potential observed in a predetermined period. The detection of a minute current can be achieved by a measurement method including the steps of applying a predetermined potential to a first terminal of an electrical element comprising the first terminal and a second terminal; measuring an amount of change in potential of a node connected to the second terminal; and calculating, from the amount of change in potential, a value of a current flowing between the first terminal and the second terminal of the electrical element.

摘要翻译： 目的在于提供能够测量微小电流的电流测量方法。 为了实现这一点，不直接测量流过电气元件的电流的值，而是根据在预定周期内观察到的电位变化来计算。 可以通过测量方法来实现微小电流的检测，包括以下步骤：将预定电位施加到包括第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据电位变化量计算在电气元件的第一端子和第二端子之间流动的电流的值。

公开(公告)号：US08698219B2

公开(公告)日：2014-04-15

申请号：US13004200

申请日：2011-01-11

申请人： Yusuke Sekine ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Shunpei Yamazaki

发明人： Yusuke Sekine ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Shunpei Yamazaki

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L27/105 ,  H01L27/1052 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225

摘要： A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state (off-state current) between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or to the memory cell by applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another so that the predetermined amount of charge is held in the node. The memory window width is changed by 2% or less, before and after 1×109 times of writing.

摘要翻译： 半导体器件具有包括写入晶体管的非易失性存储单元，该晶体管包括氧化物半导体，并且在源极和漏极之间的截止状态（截止状态电流）中具有小的漏电流，读取晶体管包括不同于 写晶体管和电容器。 通过向写入晶体管的源电极和漏电极，电容器的一个电极和读取晶体管的栅电极之一彼此电连接的节点施加电位而将数据写入或存储到存储器单元，从而 在节点中保持预定量的电荷。 1×109次写入之前和之后，存储窗宽度改变2％以下。

公开(公告)号：US08750023B2

公开(公告)日：2014-06-10

申请号：US13230122

申请日：2011-09-12

申请人： Kazuma Furutani ,  Yutaka Shionoiri

发明人： Kazuma Furutani ,  Yutaka Shionoiri

IPC分类号： G11C11/24

CPC分类号： G11C16/02 ,  G11C11/404 ,  G11C11/405 ,  G11C2207/2236

摘要： An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.

摘要翻译： 本发明的目的是提供一种能够在不使用外部电路的情况下复制存储器数据的半导体存储器件。 半导体存储器件包括多个存储器单元的第一端子共同连接的位线; 连接到位线的预充电电路，并在数据读取中对具有特定电位的位线进行预充电; 一种数据保持电路，包括暂时保存从存储单元读出的数据或写入存储单元的数据的电容器; 以及将保持在数据保持电路中的数据的反相数据输出到位线的反相数据输出电路。 反相数据输出电路包括用于控制保持在数据保持电路中的数据的反相数据的输出的装置。

公开(公告)号：US20120063206A1

公开(公告)日：2012-03-15

申请号：US13230122

申请日：2011-09-12

申请人： Kazuma Furutani ,  Yutaka Shionoiri

发明人： Kazuma Furutani ,  Yutaka Shionoiri

IPC分类号： G11C11/24

CPC分类号： G11C16/02 ,  G11C11/404 ,  G11C11/405 ,  G11C2207/2236

摘要： An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.

摘要翻译： 本发明的目的是提供一种能够在不使用外部电路的情况下复制存储器数据的半导体存储器件。 半导体存储器件包括多个存储器单元的第一端子共同连接的位线; 连接到位线的预充电电路，并在数据读取中对具有特定电位的位线进行预充电; 一种数据保持电路，包括暂时保存从存储单元读出的数据或写入存储单元的数据的电容器; 以及将保持在数据保持电路中的数据的反相数据输出到位线的反相数据输出电路。 反相数据输出电路包括用于控制保持在数据保持电路中的数据的反相数据的输出的装置。