公开(公告)号：US08247281B2

公开(公告)日：2012-08-21

申请号：US12822789

申请日：2010-06-24

申请人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

发明人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

IPC分类号： H01L21/8238

CPC分类号： H01L21/823425 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/823412 ,  H01L21/823807 ,  H01L29/7843

摘要： In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process.

摘要翻译： 在替代栅极方法中，通过例如在湿化学蚀刻步骤或CMP工艺期间，基于增强的工艺均匀性来暴露牺牲栅极材料，通过通过离子注入在层间绝缘材料中形成改性部分。 因此，当应用CMP工艺时，在施加蚀刻工艺或避免过度抛光时间的同时，可以以更高的去除速率去除损坏的部分，同时避免产生聚合物污染物。

公开(公告)号：US20120282764A1

公开(公告)日：2012-11-08

申请号：US13550435

申请日：2012-07-16

申请人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

发明人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

IPC分类号： H01L21/283 ,  H01L21/302

CPC分类号： H01L21/823425 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/823412 ,  H01L21/823807 ,  H01L29/7843

摘要： In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process.

摘要翻译： 在替代栅极方法中，通过例如在湿化学蚀刻步骤或CMP工艺期间，基于增强的工艺均匀性来暴露牺牲栅极材料，通过通过离子注入在层间绝缘材料中形成改性部分。 因此，当应用CMP工艺时，在施加蚀刻工艺或避免过度抛光时间的同时，可以以更高的去除速率去除损坏的部分，同时避免产生聚合物污染物。

公开(公告)号：US08357575B2

公开(公告)日：2013-01-22

申请号：US13550435

申请日：2012-07-16

申请人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

发明人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

IPC分类号： H01L21/8238

CPC分类号： H01L21/823425 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/823412 ,  H01L21/823807 ,  H01L29/7843

摘要： In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process.

摘要翻译： 在替代栅极方法中，通过例如在湿化学蚀刻步骤或CMP工艺期间，基于增强的工艺均匀性来暴露牺牲栅极材料，通过通过离子注入在层间绝缘材料中形成改性部分。 因此，当应用CMP工艺时，在施加蚀刻工艺或避免过度抛光时间的同时，可以以更高的去除速率去除损坏的部分，同时避免产生聚合物污染物。

公开(公告)号：US20100330790A1

公开(公告)日：2010-12-30

申请号：US12822789

申请日：2010-06-24

申请人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

发明人： Klaus Hempel ,  Patrick Press ,  Vivien Schroeder ,  Berthold Reimer ,  Johannes Groschopf

IPC分类号： H01L21/8238

CPC分类号： H01L21/823425 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/823412 ,  H01L21/823807 ,  H01L29/7843

摘要： In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process.

摘要翻译： 在替代栅极方法中，通过例如在湿化学蚀刻步骤或CMP工艺期间，基于增强的工艺均匀性来暴露牺牲栅极材料，通过通过离子注入在层间绝缘材料中形成改性部分。 因此，当应用CMP工艺时，在施加蚀刻工艺或避免过度抛光时间的同时，可以以更高的去除速率去除损坏的部分，同时避免产生聚合物污染物。

公开(公告)号：US20110049585A1

公开(公告)日：2011-03-03

申请号：US12848644

申请日：2010-08-02

申请人： Sven Beyer ,  Rick Carter ,  Andreas Hellmich ,  Berthold Reimer

发明人： Sven Beyer ,  Rick Carter ,  Andreas Hellmich ,  Berthold Reimer

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/28

CPC分类号： H01L21/28247 ,  H01L21/0206 ,  H01L21/02244 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/7848

摘要： In semiconductor devices, integrity of a titanium nitride material may be increased by exposing the material to an oxygen plasma after forming a thin silicon nitride-based material. The oxygen plasma may result in an additional passivation of any minute surface portions which may not be appropriately covered by the silicon nitride-based material. Consequently, efficient cleaning recipes, such as cleaning processes based on SPM, may be performed after the additional passivation without undue material loss of the titanium nitride material. In this manner, sophisticated high-k metal gate stacks may be formed with a very thin protective liner material on the basis of efficient cleaning processes without unduly contributing to a pronounced yield loss in an early manufacturing stage.

摘要翻译： 在半导体器件中，通过在形成薄的氮化硅基材料之后将材料暴露于氧等离子体，可以提高氮化钛材料的完整性。 氧等离子体可能导致任何微小表面部分的附加钝化，这些微小表面部分可能不被氮化硅基材料适当地覆盖。 因此，可以在附加钝化之后进行有效的清洁配方，例如基于SPM的清洁方法，而不会导致氮化钛材料的不适当的材料损失。 以这种方式，可以在有效的清洁过程的基础上形成具有非常薄的保护衬垫材料的复杂的高k金属栅极堆叠，而不会在早期制造阶段中过度地造成显着的产量损失。

公开(公告)号：US20100304542A1

公开(公告)日：2010-12-02

申请号：US12785849

申请日：2010-05-24

申请人： Sven Beyer ,  Berthold Reimer ,  Falk Graetsch

发明人： Sven Beyer ,  Berthold Reimer ,  Falk Graetsch

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/28079 ,  H01L29/513 ,  H01L29/66583 ,  H01L29/7833

摘要： A gate electrode structure may be formed on the basis of a silicon nitride cap material in combination with a very thin yet uniform silicon oxide based etch stop material, which may be formed on the basis of a chemically driven oxidation process. Due to the reduced thickness, a pronounced material erosion, for instance, during a wet chemical cleaning process after gate patterning, may be avoided, thereby not unduly affecting the further processing, for instance with respect to forming an embedded strain-inducing semiconductor alloy, while nevertheless providing the desired etch stop capabilities during removing the silicon nitride cap material.

摘要翻译： 栅极电极结构可以基于氮化硅帽材料与非常薄且均匀的基于氧化硅的蚀刻停止材料组合形成，其可以基于化学驱动的氧化工艺形成。 由于厚度减小，可以避免例如在门图案化之后的湿化学清洁过程期间显着的材料侵蚀，从而不会过度影响进一步的加工，例如关于形成嵌入式应变诱导半导体合金， 同时在去除氮化硅帽材料期间提供期望的蚀刻停止能力。

公开(公告)号：US08951901B2

公开(公告)日：2015-02-10

申请号：US13188745

申请日：2011-07-22

申请人： Sven Beyer ,  Berthold Reimer ,  Falk Graetsch

发明人： Sven Beyer ,  Berthold Reimer ,  Falk Graetsch

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51

CPC分类号： H01L29/42376 ,  H01L21/28114 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/32139 ,  H01L29/42364 ,  H01L29/4958 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

摘要： In sophisticated semiconductor devices, the encapsulation of sensitive gate materials, such as a high-k dielectric material and a metal-containing electrode material, which are provided in an early manufacturing stage may be achieved by forming an undercut gate configuration. To this end, a wet chemical etch sequence is applied after the basic patterning of the gate layer stack, wherein at least ozone-based and hydrofluoric acid-based process steps are performed in an alternating manner, thereby achieving a substantially self-limiting removal behavior.

摘要翻译： 在复杂的半导体器件中，可以通过形成底切门配置来实现在早期制造阶段中提供的诸如高k电介质材料和含金属电极材料的敏感栅极材料的封装。 为此，在栅极层叠层的基本图案化之后施加湿化学蚀刻序列，其中至少以交替的方式进行基于臭氧和基于氢氟酸的工艺步骤，从而实现基本上自限制的去除行为 。

公开(公告)号：US08524591B2

公开(公告)日：2013-09-03

申请号：US12848644

申请日：2010-08-02

申请人： Sven Beyer ,  Rick Carter ,  Andreas Hellmich ,  Berthold Reimer

发明人： Sven Beyer ,  Rick Carter ,  Andreas Hellmich ,  Berthold Reimer

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/28

CPC分类号： H01L21/28247 ,  H01L21/0206 ,  H01L21/02244 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/7848

摘要： In semiconductor devices, integrity of a titanium nitride material may be increased by exposing the material to an oxygen plasma after forming a thin silicon nitride-based material. The oxygen plasma may result in an additional passivation of any minute surface portions which may not be appropriately covered by the silicon nitride-based material. Consequently, efficient cleaning recipes, such as cleaning processes based on SPM, may be performed after the additional passivation without undue material loss of the titanium nitride material. In this manner, sophisticated high-k metal gate stacks may be formed with a very thin protective liner material on the basis of efficient cleaning processes without unduly contributing to a pronounced yield loss in an early manufacturing stage.

摘要翻译： 在半导体器件中，通过在形成薄的氮化硅基材料之后将材料暴露于氧等离子体，可以提高氮化钛材料的完整性。 氧等离子体可能导致任何微小表面部分的附加钝化，这些微小表面部分可能不被氮化硅基材料适当地覆盖。 因此，可以在附加钝化之后进行有效的清洁配方，例如基于SPM的清洁方法，而不会导致氮化钛材料的不适当的材料损失。 以这种方式，可以在有效的清洁过程的基础上形成具有非常薄的保护衬垫材料的复杂的高k金属栅极堆叠，而不会在早期制造阶段中过度地造成显着的产量损失。

公开(公告)号：US20130203244A1

公开(公告)日：2013-08-08

申请号：US13368055

申请日：2012-02-07

申请人： Joanna Wasyluk ,  Stephan Kronholz ,  Yew-Tuck Chow ,  Richard J. Carter ,  Berthold Reimer ,  Kai Tern Sih

发明人： Joanna Wasyluk ,  Stephan Kronholz ,  Yew-Tuck Chow ,  Richard J. Carter ,  Berthold Reimer ,  Kai Tern Sih

IPC分类号： H01L21/20

CPC分类号： H01L21/30604 ,  H01L21/76232 ,  H01L21/823807 ,  H01L21/823878

摘要： A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing an integrated circuit comprising a p-type field effect transistor (pFET), recessing a surface region of the pFET using an ammonia-hydrogen peroxide-water (APM) solution to form a recessed pFET surface region, and depositing a silicon-based material channel on the recessed pFET surface region.

摘要翻译： 公开了一种用于制造集成电路的方法，其包括根据实施例提供包括p型场效应晶体管（pFET）的集成电路，使用氨 - 过氧化氢 - 水（pFET）凹陷pFET的表面区域 APM）溶液以形成凹陷的pFET表面区域，以及在凹陷的pFET表面区域上沉积硅基材料通道。

公开(公告)号：US20130126984A1

公开(公告)日：2013-05-23

申请号：US13301981

申请日：2011-11-22

申请人： Berthold Reimer ,  Martin Trentzsch ,  Erwin Grund ,  Sven Beyer

发明人： Berthold Reimer ,  Martin Trentzsch ,  Erwin Grund ,  Sven Beyer

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： H01L21/28088 ,  H01L21/02244 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76807 ,  H01L29/4966

摘要： When patterning metal-containing material layers, such as titanium nitride, in critical manufacturing stages, for instance upon forming sophisticated high-k metal gate electrode structures or providing hard mask materials for patterning a metallization system, the surface adhesion of a resist material on the titanium nitride material may be improved by applying a controlled oxidation process.

摘要翻译： 当在关键制造阶段中，例如在形成复杂的高k金属栅极电极结构或提供用于图案化金属化系统的硬掩模材料时，将诸如氮化钛的含金属材料层图案化时，抗蚀剂材料在 可以通过施加受控氧化工艺来改善氮化钛材料。