公开(公告)号：US4018566A

公开(公告)日：1977-04-19

申请号：US559016

申请日：1975-03-17

申请人： Klaus Zeuch ,  Josef Stadter

发明人： Klaus Zeuch ,  Josef Stadter

IPC分类号： C30B11/06 ,  C30B13/00 ,  C30B13/28 ,  C30B29/40 ,  B01J17/08 ,  B01J17/06

CPC分类号： C30B13/28 ,  C30B13/00 ,  C30B29/44 ,  Y10T117/1004 ,  Y10T117/1012

摘要： In apparatus for the preparation of a semiconductor compound such as gallium phosphide using the Bridgman method in a horizontal system equipped with a heating device and disposed in a pressure vessel, the reaction tube is mounted in a stationary fashion in a reaction boat and the heating device supported so that it is moveable in the direction of the horizontal axis of the system to permit synthesis of the semiconductor compound along with zone melting and drawing of single crystals. A light guide having its free end arranged below the reaction tube is mounted to the heating device for movement therewith and is used to measure the temperature at the reaction boat.

摘要翻译： 在装备有加热装置的水平系统中，使用布里奇曼法（Bridgman method）制备半导体化合物如磷化镓的设备，并设置在压力容器中，反应管以静止的方式安装在反应舟皿和加热装置 支撑使得其可以在系统的水平轴线的方向上移动，以允许半导体化合物的合成以及单晶的区域熔融和拉伸。 将其自由端布置在反应管下方的导光体安装到加热装置上以与其一起运动，并用于测量反应舟皿的温度。

公开(公告)号：US3981196A

公开(公告)日：1976-09-21

申请号：US561342

申请日：1975-03-24

申请人： Klaus Zeuch ,  Josef Stadter

发明人： Klaus Zeuch ,  Josef Stadter

IPC分类号： C01B25/06 ,  G01K1/14 ,  H01L21/66 ,  F27D21/00

CPC分类号： G01K1/14 ,  C01B25/06

摘要： Apparatus for measuring the temperature of a granular semiconductor material of the type which is evaporated when manufacturing a semiconductor such as gallium phosphide within an ampoule or reaction tube, in which a temperature sensor is installed in a measuring tube having a closed end extending into the ampoule and the semiconductor material therein and an opened end which is sealed into a suitable opening in the end of the ampoule with the electrical leads for the temperature sensor being brought out from the measuring tube through the opening in the ampoule.

摘要翻译： 用于测量在安瓿或反应管内制造诸如磷化镓之类的半导体时被蒸发的类型的颗粒状半导体材料的温度的装置，其中温度传感器安装在具有延伸到安瓿中的封闭端的测量管中 其中的半导体材料和开口端，其封闭在安瓿端部的合适开口中，用于温度传感器的电引线通过安瓿的开口从测量管出来。

公开(公告)号：US3991163A

公开(公告)日：1976-11-09

申请号：US455912

申请日：1974-03-28

申请人： Gunter Raab ,  Klaus Zeuch

发明人： Gunter Raab ,  Klaus Zeuch

IPC分类号： C30B29/40 ,  C01B25/06 ,  C01B25/08 ,  C09K11/70 ,  C22C1/00 ,  H01L33/30 ,  C01B25/00 ,  C22C12/00 ,  C22C28/00

CPC分类号： H01L33/30 ,  C01B25/06 ,  C09K11/70 ,  C22C1/007 ,  Y10S420/903

摘要： A process for the production of compact polycrystalline III A - V B compounds such as GaP through direct synthesis from the components in a closed horizontal system, in which at least one of the components has a substantially higher partial vapor pressure over the molten compound being produced than do the other components. In carrying out the process, the components which are more difficult to vaporize are heated in a narrow reaction zone to a temperature in the range of 100.degree. to 500.degree. C below the congruent melting temperature of the compound being produced while the pressure of the easily vaporized components is adjusted so that it amounts to between 0.14 and 0.33 times the decomposition vapor pressure of the compound being produced and thus to 50 to 120 times the decomposition vapor pressure of the solution of the compound being produced in the components which are difficult to vaporize at the reaction temperature.

摘要翻译： 一种用于通过从闭合水平系统中的组分直接合成来生产紧凑型多晶III-A-VB化合物如GaP的方法，其中至少一种组分比所生成的熔融化合物具有显着更高的部分蒸汽压， 做其他组件。 在进行该方法时，较难蒸发的组分在窄反应区中被加热到低于所生成化合物的一致熔融温度的100至500℃的温度，同时容易 调节蒸发成分，使其达到所生成化合物的分解蒸气压的0.14〜0.33倍，因此成为难以汽化的成分中生成的化合物的溶液的分解蒸气压的50〜120倍 在反应温度。

公开(公告)号：US5045273A

公开(公告)日：1991-09-03

申请号：US396992

申请日：1989-08-22

申请人： Rainer Gassen ,  Horst-Otto Bertholdt ,  Klaus Zeuch

发明人： Rainer Gassen ,  Horst-Otto Bertholdt ,  Klaus Zeuch

IPC分类号： G21F9/28 ,  G21F9/00 ,  G21F9/34

CPC分类号： G21F9/004

摘要： A method for chemical decontamination of the surface of a metal component of a nuclear reactor plant includes treating the surface of the metal component in a single-step method with an aqueous solution that is free of carbonic acid oxalic acid and contains a different carbonic acid.

摘要翻译： 用于核反应堆设备的金属组分表面的化学去污的方法包括用不含碳酸草酸并含有不同碳酸的水溶液以一步法处理金属组分的表面。

公开(公告)号：US4035154A

公开(公告)日：1977-07-12

申请号：US559014

申请日：1975-03-17

申请人： Gunter Raab ,  Klaus Zeuch

发明人： Gunter Raab ,  Klaus Zeuch

IPC分类号： C22B58/00 ,  B01J3/04 ,  C01B25/06 ,  C01G15/00 ,  C30B13/00 ,  C30B13/08 ,  C30B29/40 ,  B01D9/00 ,  B01J17/08

CPC分类号： C01B25/06 ,  B01J3/04 ,  C01G15/00

摘要： An apparatus for preparing a semiconductor compound, having one compound with a substantially higher vapor pressure than the other using a closed horizontal tube disposed in a pressure vessel. The two ends of the tube are located in respective heating ovens having their ends facing away from the tube closed. The heating ovens and tube are disposed within a pressure vessel with the heating ovens having an outside diameter which is considerably smaller than the inside diameter of the pressure vessel and with the total length of the heating ovens arranged one behind the other in the axial direction of the tube substantially smaller than the length of the pressure vessel. In addition, a portion of the tube located between the ovens has associated therewith a separate cooling device.

摘要翻译： 一种制备半导体化合物的装置，其具有使用设置在压力容器中的封闭水平管，具有比另一种更高的蒸气压的化合物。 管的两端位于各自的加热炉中，其加热炉的端部背离管子封闭。 加热炉和管设置在压力容器内，加热炉的外径比压力容器的内径小得多，加热炉的总长度在轴向方向上一个接一个地排列 该管显着地小于压力容器的长度。 此外，位于炉之间的管的一部分与其分开一个单独的冷却装置。

公开(公告)号：US4162293A

公开(公告)日：1979-07-24

申请号：US754518

申请日：1976-12-27

申请人： Klaus Zeuch

发明人： Klaus Zeuch

IPC分类号： B01J3/04 ,  C01B25/08 ,  B01J17/26

CPC分类号： B01J3/04 ,  C01B25/082 ,  C01B25/087

摘要： Apparatus for the preparation of a semiconductor compound having one component with a substantially higher vapor pressure than the other using a closed horizontal ampule in a pressure vessel with the two ends of the ampule located in respective heating ovens in which the ampule is self supporting without a support tube in the zone between the heating ovens thereby permitting this zone, which is highly heated by means of an inductive heating apparatus or the like, to be cooled directly by means of a cooling gas circulating in the pressure vessel and in which the coupling of the heating means to a graphite boat or the like inside the ampule is improved.

摘要翻译： 用于制备半导体化合物的装置，其具有比另一种组件具有显着更高的蒸汽压的组分，所述组分具有在压力容器中的封闭的水平安瓿，其中安瓿的两端位于相应的加热炉中，其中安瓿是自支撑的， 支撑管在加热炉之间的区域中，从而允许通过感应加热装置等高度加热的该区域将通过在压力容器中循环的冷却气体直接冷却，其中耦合 在安瓿内的石墨舟等的加热装置得到改善。

公开(公告)号：US4049373A

公开(公告)日：1977-09-20

申请号：US665879

申请日：1976-03-11

申请人： Klaus Zeuch

发明人： Klaus Zeuch

IPC分类号： C01B25/06 ,  F27B14/10

CPC分类号： C01B25/06

摘要： An apparatus for producing compact polycrystalline ingots of materials such as InP, GaP and GaAs having a defined geometric form is provided comprising a reaction boat having a plurality of melting pots formed therein, said melting pots having the shape of a single crystal melting crucible and at least one connecting canal communicating with said melting pots.

摘要翻译： 提供了一种用于生产具有限定几何形状的诸如InP，GaP和GaAs的材料的紧凑型多晶锭的装置，包括具有形成在其中的多个熔池的反应舟，所述熔炉具有单晶熔化坩埚的形状， 至少一个与所述熔炉相通的连接通道。

公开(公告)号：US3988920A

公开(公告)日：1976-11-02

申请号：US561341

申请日：1975-03-24

申请人： Gunter Raab ,  Klaus Zeuch

发明人： Gunter Raab ,  Klaus Zeuch

IPC分类号： B01J12/00 ,  B01J3/04 ,  C01B25/06 ,  C01B25/08 ,  C22C1/00 ,  C30B11/00 ,  H01L21/208 ,  G01M3/06 ,  G01M3/34

CPC分类号： C30B29/40 ,  B01J3/04 ,  C01B25/06 ,  C30B11/00

摘要： In an apparatus for the preparation of compounds in which one of the components is a highly volatile reactive component, in particular when preparing gallium phosphide, under pressure in an ampoule located in a pressure vessel, between 0.5 and 25% by volume and preferably 1.5 to 3% by volume of a gas capable of reacting with the highly volatile component, such as oxygen, air or carbon dioxide, is mixed in the pressure vessel to the gas which is used for pressurizing and as a cooling medium and the pressure in the pressure vessel is matched to the internal pressure of the ampoule in which the reaction is taking place.

摘要翻译： 在制备化合物的装置中，其中一种组分是高挥发性反应性组分，特别是在制备磷化镓时，在位于压力容器中的安瓿中的压力下，为0.5至25体积％，优选为1.5至 能够与高挥发性成分（例如氧气，空气或二氧化碳）反应的气体的3体积％在压力容器中与用于加压和作为冷却介质的气体混合，压力压力 容器与反应发生的安瓿瓶的内部压力相匹配。