TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM
    2.
    发明申请
    TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM 审中-公开
    透明导电膜,其制造方法和使用透明导电膜的电子器件

    公开(公告)号:US20120301710A1

    公开(公告)日:2012-11-29

    申请号:US13577020

    申请日:2011-01-26

    IPC分类号: B32B9/04 C23C14/48 B32B5/00

    摘要: A transparent conductive film which exhibits excellent gas barrier performance and electrical conductivity, and exhibits low sheet resistivity and high electrical conductivity, even after having been placed in moist and high-temperature conditions. The conductive film is in the form of a zinc oxide-based electrically conductive stacked structure, and the film includes a substrate and, formed on at least one surface of the substrate, (A) a gas barrier layer and (B) a transparent conductive layer formed of a zinc oxide-based conductive material, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, carbon atoms, and silicon atoms, and includes a region in which the oxygen atom concentration gradually decreases and the carbon atom concentration gradually increases from the surface in the depth direction of the layer.

    摘要翻译: 具有优异的阻气性和导电性的透明导电膜,即使在潮湿和高温条件下放置,也具有低的电阻率和高导电性。 导电膜为氧化锌系导电性叠层结构体,膜为基材,在基材的至少一面形成有(A)阻气层,(B)透明导电性 由氧化锌类导电材料形成的层,其中阻气层由至少含有氧原子,碳原子和硅原子的材料形成,并且包括氧原子浓度逐渐降低的区域和碳原子 浓度从层的深度方向的表面逐渐增加。

    TRANSPARENT CONDUCTIVE FILM, PRODUCTION METHOD THEREFOR, MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    3.
    发明申请
    TRANSPARENT CONDUCTIVE FILM, PRODUCTION METHOD THEREFOR, MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 审中-公开
    透明导电膜,其制造方法,电子设备用材料和电子设备

    公开(公告)号:US20130230730A1

    公开(公告)日:2013-09-05

    申请号:US13879041

    申请日:2011-10-13

    IPC分类号: H01B1/08 H01B5/14 C23C14/48

    摘要: The present invention provides a transparent conductive film including a base layer, a gas barrier layer, and a transparent conductive layer, the gas barrier layer being formed of a material that includes at least oxygen atoms, carbon atoms, and silicon atoms, the gas barrier layer including an area (A) in which an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases from a surface in a depth direction, the area (A) including a partial area (A1) and a partial area (A2), the partial area (A1) having an oxygen atom content rate of 20 to 55%, a carbon atom content rate of 25 to 70%, and a silicon atom content rate of 5 to 20%, based on a total content rate of oxygen atoms, carbon atoms, and silicon atoms, and the partial area (A2) having an oxygen atom content rate of 1 to 15%, a carbon atom content rate of 72 to 87%, and a silicon atom content rate of 7 to 18%, based on a total content rate of oxygen atoms, carbon atoms, and silicon atoms.

    摘要翻译: 本发明提供了一种透明导电膜,其包括基底层,阻气层和透明导电层,所述阻气层由至少包含氧原子,碳原子和硅原子的材料形成,所述阻气层 包含其中氧原子含量率逐渐降低的区域(A),并且碳原子含量率从深度方向的表面逐渐增加,所述区域(A)包括部分区域(A1)和部分区域 A2),基于总含量比,氧原子含量率为20〜55%,碳原子含量率为25〜70%,硅原子含有率为5〜20%的部分区域(A1) 的氧原子,碳原子和硅原子,氧原子含有率为1〜15%的部分区域(A2),碳原子含量率为72〜87%,硅原子含有率为7〜 18%,基于氧原子,碳原子和硅原子的总含量比。

    Modified polysilazane film and method for producing gas barrier film
    4.
    发明授权
    Modified polysilazane film and method for producing gas barrier film 有权
    改性聚硅氮化硅膜及其制造方法

    公开(公告)号:US09512334B2

    公开(公告)日:2016-12-06

    申请号:US14126129

    申请日:2012-07-12

    摘要: Provided are a modified polysilazane film that is preferable as an intermediate material for forming a predetermined gas barrier film, and a method for producing a gas barrier film having excellent gas barrier properties using such modified polysilazane film as an intermediate material. A modified polysilazane film comprising a substrate and a modified polysilazane layer formed thereon, and a method for producing a gas barrier film obtained through such intermediate material, wherein the modified polysilazane layer has a thickness of a value in the range of 10 to 500 nm, and the modified polysilazane layer has a refractive index of a value in the range of 1.48 to 1.63.

    摘要翻译: 提供作为用于形成预定阻气膜的中间材料的改性聚硅氮烷膜,以及使用这种改性聚硅氮烷膜作为中间材料的阻气性优异的阻气膜的制造方法。 包含基材和形成在其上的改性聚硅氮烷层的改性聚硅氮烷薄膜,以及通过这种中间材料制备阻气膜的方法,其中改性聚硅氮烷层的厚度为10〜500nm, 改性聚硅氮烷层的折射率为1.48〜1.63的范围。

    MODIFIED POLYSILAZANE FILM AND METHOD FOR PRODUCING GAS BARRIER FILM
    5.
    发明申请
    MODIFIED POLYSILAZANE FILM AND METHOD FOR PRODUCING GAS BARRIER FILM 有权
    改性聚硅氧烷膜及其制备气体阻隔膜的方法

    公开(公告)号:US20140199544A1

    公开(公告)日:2014-07-17

    申请号:US14126129

    申请日:2012-07-12

    IPC分类号: C09D183/16 C09D1/00 B05D5/00

    摘要: Provided are a modified polysilazane film that is preferable as an intermediate material for forming a predetermined gas barrier film, and a method for producing a gas barrier film having excellent gas barrier properties using such modified polysilazane film as an intermediate material.A modified polysilazane film comprising a substrate and a modified polysilazane layer formed thereon, and a method for producing a gas barrier film obtained through such intermediate material, wherein the modified polysilazane layer has a thickness of a value in the range of 10 to 500 nm, and the modified polysilazane layer has a refractive index of a value in the range of 1.48 to 1.63.

    摘要翻译: 提供作为用于形成预定阻气膜的中间材料的改性聚硅氮烷膜,以及使用这种改性聚硅氮烷膜作为中间材料的阻气性优异的阻气膜的制造方法。 包含基材和形成在其上的改性聚硅氮烷层的改性聚硅氮烷薄膜,以及通过这种中间材料制备阻气膜的方法,其中改性聚硅氮烷层的厚度为10〜500nm, 改性聚硅氮烷层的折射率为1.48〜1.63的范围。

    Gas-barrier film, process for producing same, member for electronic device, and electronic device
    6.
    发明授权
    Gas-barrier film, process for producing same, member for electronic device, and electronic device 有权
    阻气膜,其制造方法,电子装置用构件和电子装置

    公开(公告)号:US08846200B2

    公开(公告)日:2014-09-30

    申请号:US13823688

    申请日:2011-09-16

    摘要: The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member. The gas barrier film of the invention exhibits an excellent gas barrier capability, excellent transparency, excellent bending resistance, and excellent heat resistance.

    摘要翻译: 本发明提供了一种阻气膜,其包括基底层和设置在基底层的至少一侧的阻气层,所述基底层包括玻璃化转变温度(Tg)大于130°的树脂 气体阻隔层由至少包含氧原子和硅原子的材料形成,阻气层的氧原子含有率为60〜75%的表层部分,氮原子含有率 为0〜10%,硅原子含有率为25〜35%,基于氧原子,氮原子和硅原子的总含有率,阻气层的表层部分的膜密度为 2.4〜4.0g / cm 3。 还提供了制造该方法的方法,包括阻气膜的电子器件部件和包括该电子器件部件的电子器件。 本发明的阻气膜表现出优异的阻气性,优异的透明性,优异的耐弯曲性和优异的耐热性。

    Formed Article, Method for Producing Same, Electronic Device Member, and Electronic Device
    10.
    发明申请
    Formed Article, Method for Producing Same, Electronic Device Member, and Electronic Device 有权
    形成文章,生产方法,电子设备成员和电子设备

    公开(公告)号:US20120088880A1

    公开(公告)日:2012-04-12

    申请号:US13138499

    申请日:2010-03-24

    IPC分类号: H05H1/24 C08K5/01 C08L83/04

    摘要: Disclosed is a formed article comprising a layer obtained by implanting ions of a hydrocarbon compound into a polyorganosiloxane compound-containing layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a hydrocarbon compound into a surface of a polyorganosiloxane compound-containing layer of a formed body that includes the polyorganosiloxane compound-containing layer in its surface; an electronic device member that includes the formed article; and an electronic device that includes the electronic device member. The present invention provides; a formed article which exhibits an excellent gas barrier capability, transparency, bendability, antistatic performance, and surface flatness; a method of producing the formed article, an electronic device member, and an electronic device.

    摘要翻译: 公开了一种成形制品,其包括通过将烃化合物的离子注入到含有机硅氧烷化合物的层中而获得的层。 还公开了一种生产成型制品的方法,该方法包括将烃化合物的离子注入到其表面上包含含聚有机硅氧烷化合物的层的成形体的含聚有机硅氧烷化合物的层的表面中; 包括所述成形制品的电子装置构件; 以及包括电子设备构件的电子设备。 本发明提供: 表现出优异的阻气性,透明性,弯曲性,抗静电性能和表面平坦度的成形制品; 制成成形品的方法,电子器件部件和电子器件。