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    GAS BARRIER FILM AND ELECTRONIC APPARATUS
    3.
    发明申请
    GAS BARRIER FILM AND ELECTRONIC APPARATUS 有权
    气体阻隔膜和电子设备

    公开(公告)号：US20140322478A1

    公开(公告)日：2014-10-30

    申请号：US14360468

    申请日：2012-11-16

    申请人： Konica Minolta, Inc.

    发明人： Takahiro Mori

    IPC分类号： H01L51/52 ,  H05K5/06

    CPC分类号： H01L51/5246 ,  C08J7/042 ,  C08J7/047 ,  C08J2483/16 ,  H01L51/5253 ,  H05K5/069 ,  Y10T428/239 ,  Y10T428/24364 ,  Y10T428/265

    摘要： A gas barrier film (10) that comprises a gas barrier layer (14), which is obtained by irradiating a layer that contains a polysilazane with vacuum ultraviolet light, on a base (11) is formed to contain a compound (A) that satisfies all of the conditions (a), (b) and (c) described below in an amount within the range from 1% by mass to 40% by mass (inclusive) relative to the total mass of the gas barrier layer. (a) The compound (A) has an Si—O bond and an organic group that is directly bonded to Si. (b) The compound (A) has an Si—H group or an Si—OH group. (c) The compound (A) has a molecular weight of from 90 to 1,200 (inclusive).

    摘要翻译： 形成包含通过用真空紫外线照射含有聚硅氮烷的层而在基材（11）上照射的阻气层（14）的阻气膜（10），其含有满足下述 以下所述的所有条件（a），（b）和（c）相对于气体阻隔层的总质量为1质量％〜40质量％ （a）化合物（A）具有Si-O键和与Si直接结合的有机基团。 （b）化合物（A）具有Si-H基或Si-OH基。 （c）化合物（A）的分子量为90〜1200（含）。

    METHOD FOR MANUFACTURING TRANSPARENT, HEAT-RESISTANT GAS-BARRIER FILM
    4.
    发明申请
    METHOD FOR MANUFACTURING TRANSPARENT, HEAT-RESISTANT GAS-BARRIER FILM 有权
    制造透明，耐热气体阻隔膜的方法

    公开(公告)号：US20140322444A1

    公开(公告)日：2014-10-30

    申请号：US14355692

    申请日：2012-11-08

    申请人： MITSUBISHI GAS CHEMICAL COMPANY, INC.

    发明人： Shuya Suenaga ,  Yasushi Miki

    IPC分类号： B32B33/00 ,  B05D3/02

    CPC分类号： B32B33/00 ,  B05D3/0254 ,  B05D2505/50 ,  B32B27/00 ,  B32B2037/243 ,  B32B2307/306 ,  B32B2307/412 ,  B32B2307/7242 ,  B32B2379/08 ,  C08J7/045 ,  C08J7/047 ,  C08J2379/08 ,  C08J2483/16 ,  C23C18/1208 ,  C23C18/1212

    摘要： The present invention provides a process for producing a transparent heat-resistant gas-barrier film capable of exhibiting a good gas-barrier property and maintaining good properties even after heat-treated at a temperature of 250° C. or higher, in a simple manner at low costs without need of a large size facility and a number of steps. The process for producing a transparent heat-resistant gas-barrier film according to the present invention includes the steps of coating a polysilazane-containing solution onto at least one surface of a transparent polyimide film formed of a polyimide containing a specific repeated unit; and calcining the coated solution at a temperature of 180° C. or higher to laminate a silicon oxide layer obtained by the calcination on the transparent polyimide film.

    摘要翻译： 本发明提供了一种即使在250℃以上的温度下进行热处理后也能够显示出良好的阻气性且保持良好性能的透明耐热阻气膜的制造方法 低成本，无需大型设施和多个步骤。 根据本发明的透明耐热阻气膜的制造方法包括以下步骤：将聚硅氮烷溶液涂布在由含有特定重复单元的聚酰亚胺形成的透明聚酰亚胺膜的至少一个表面上; 并在180℃或更高的温度下煅烧涂布的溶液以将通过煅烧获得的氧化硅层层压在透明聚酰亚胺膜上。

    GAS BARRIER FILM, METHOD FOR PRODUCING SAME, GAS BARRIER FILM LAMINATE, MEMBER FOR ELECTRONIC DEVICES, AND ELECTRONIC DEVICE
    5.
    发明申请
    GAS BARRIER FILM, METHOD FOR PRODUCING SAME, GAS BARRIER FILM LAMINATE, MEMBER FOR ELECTRONIC DEVICES, AND ELECTRONIC DEVICE 审中-公开
    气体阻隔膜，其制造方法，气体阻隔膜层压板，电子器件用构件和电子装置

    公开(公告)号：US20140308494A1

    公开(公告)日：2014-10-16

    申请号：US14355904

    申请日：2012-11-02

    申请人： LINTEC CORPORATION

    发明人： Wataru Iwaya ,  Hironobu Fujimoto ,  Naoki Taya ,  Masaharu Ito ,  Takeshi Kondo

    IPC分类号： H01L51/52 ,  H01L51/00

    CPC分类号： H01L51/5253 ,  B32B27/08 ,  B32B27/26 ,  B32B27/286 ,  B32B27/365 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2307/702 ,  B32B2307/7242 ,  B32B2307/748 ,  B32B2457/202 ,  C08J7/047 ,  C08J7/06 ,  C08J2345/00 ,  C08J2381/06 ,  C08J2483/16 ,  C08K5/103 ,  C08K2201/008 ,  G02F2001/133311 ,  G02F2001/133331 ,  G02F2201/501 ,  G02F2201/503 ,  H01L51/003 ,  H01L51/5256 ,  Y10T428/24975 ,  Y10T428/31533

    摘要： The present invention provides: a gas barrier film comprising a cured resin layer and a gas barrier layer, the gas barrier layer being provided on at least one side of the cured resin layer, the cured resin layer being a layer formed of a cured product of a curable resin composition that includes (A) a thermoplastic resin having a glass transition temperature (Tg) of 140° C. or more, and (B) a curable monomer, the gas barrier film having a water vapor transmission rate of 1 g/m2/day or less at a temperature of 40° C. and a relative humidity of 90%; a method for producing the gas barrier film; a gas barrier film laminate comprising the gas barrier film; an electronic device member comprising the gas barrier film; an electronic device member comprising the gas barrier film laminate; an electronic device comprising the electronic device member. Since the gas barrier film and the gas barrier film laminate of the present invention exhibits excellent heat resistance, excellent solvent resistance, excellent interlayer adhesion, and an excellent gas barrier capability, has a low birefringence, and exhibits excellent optical isotropy, the gas barrier film and the gas barrier film laminate may suitably be used as an electronic device member.

    摘要翻译： 本发明提供一种阻气膜，其具有固化树脂层和阻气层，所述阻气层设置在所述固化树脂层的至少一侧，所述固化树脂层为由固化树脂层和固化树脂层的固化物形成的层 包含（A）玻璃化转变温度（Tg）为140℃以上的热塑性树脂和（B）固化性单体的固化性树脂组合物，所述阻气膜的水蒸气透过率为1g / m 2 /天以下，温度40℃，相对湿度90％。 一种制造阻气膜的方法; 包含阻气膜的阻气膜层压体; 包括所述阻气膜的电子装置构件; 包括所述阻气膜层压体的电子装置构件; 包括电子设备构件的电子设备。 由于本发明的阻气膜和阻气膜层叠体显示出优异的耐热性，优异的耐溶剂性，优异的层间粘合性和优异的阻气性，具有低的双折射性，并且表现出优异的光学各向同性，阻气膜 并且阻气膜层压体可以适当地用作电子器件部件。

    METHOD OF MANUFACTURING GAS BARRIER FILM
    6.
    发明申请
    METHOD OF MANUFACTURING GAS BARRIER FILM 审中-公开
    气体阻隔膜的制造方法

    公开(公告)号：US20130122217A1

    公开(公告)日：2013-05-16

    申请号：US13810914

    申请日：2011-07-01

    申请人： Kiyoshi Akagi

    发明人： Kiyoshi Akagi

    IPC分类号： B05D3/06

    CPC分类号： B05D3/065 ,  B05D3/0486 ,  B05D3/067 ,  B05D7/04 ,  C08J2483/16 ,  H01L51/5253

    摘要： A method of manufacturing a gas barrier film inhibits modification-suppressing adsorbed substances from being taken in a coating film to further improve gas barrier performance. In the method, a coating solution containing polysilazane is coated, followed by application of a VUV radiation treatment. In addition, a method of manufacturing a gas barrier film includes coating a coating solution containing polysilazane on a surface of a film to form a coating film, followed by making the resulting film pass through a drying zone, and exposing the surface of the coating film to vacuum UV radiation to conduct a modification treatment. An oxygen concentration in the drying zone, achieved by supplying inert gas into the drying zone, is 10% or less.

    摘要翻译： 阻气膜的制造方法抑制了改性抑制吸附物质被吸收在涂膜中以进一步提高阻气性能。 在该方法中，涂布含有聚硅氮烷的涂布液，然后进行VUV辐射处理。 此外，制造阻气膜的方法包括在膜表面上涂布含有聚硅氮烷的涂布溶液，形成涂膜，然后使得到的膜通过干燥区，并使涂膜的表面露出 真空紫外线进行改性处理。 通过向干燥区供给惰性气体而实现的干燥区的氧浓度为10％以下。

    WATER VAPOR BARRIER FILM, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME
    9.
    发明申请
    WATER VAPOR BARRIER FILM, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME 审中-公开
    水蒸汽隔膜，其制造方法和使用该电子设备的电子设备

    公开(公告)号：US20140127518A1

    公开(公告)日：2014-05-08

    申请号：US14125598

    申请日：2012-06-07

    申请人： Wataru Ishikawa

    发明人： Wataru Ishikawa

    IPC分类号： H01L23/29

    CPC分类号： H01L23/296 ,  C08J7/042 ,  C08J7/123 ,  C08J2367/02 ,  C08J2483/04 ,  C08J2483/16 ,  H01L51/0096 ,  H01L51/5253 ,  H01L2924/0002 ,  Y10T428/24975 ,  Y10T428/31663 ,  H01L2924/00

    摘要： A water vapor barrier film that has high water vapor barrier performance, and further is excellent in water resistance, heat resistance, transparency, and smoothness; and a method for producing the same; and an electronic equipment using the same are provided. A water vapor barrier film containing at least one water vapor barrier layer, and at least one protective layer, on a base material having gas permeability, wherein the water vapor barrier layer is a layer formed by applying a coating liquid containing polysilazane, drying the applied coating liquid to form a film, and then by irradiating the film with vacuum ultraviolet light, and the protective layer is a layer formed by applying a coating liquid containing polysilozane, drying the applied coating liquid to form a film, and then by irradiating the film with vacuum ultraviolet light.

    摘要翻译： 具有高水蒸气阻隔性能的水蒸气阻隔膜，耐水性，耐热性，透明性，平滑性优异; 及其制造方法。 并提供使用该设备的电子设备。 一种在具有透气性的基材上含有至少一个水蒸气阻隔层和至少一个保护层的水蒸气阻隔膜，其中所述水蒸气阻隔层是通过涂布含有聚硅氮烷的涂布液形成的层， 涂布液以形成膜，然后通过真空紫外线照射该膜，并且保护层是通过涂布含有聚硅烷烷的涂布液，干燥涂布的涂布液以形成膜形成的层，然后通过照射该膜 带真空紫外线。

    GAS-BARRIER FILM, PROCESS FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    10.
    发明申请
    GAS-BARRIER FILM, PROCESS FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 有权
    气体隔膜，其制造方法，电子设备用构件和电子设备

    公开(公告)号：US20130244044A1

    公开(公告)日：2013-09-19

    申请号：US13823688

    申请日：2011-09-16

    申请人： Masaharu Ito ,  Takeshi Kondo ,  Yuta Suzuki

    发明人： Masaharu Ito ,  Takeshi Kondo ,  Yuta Suzuki

    IPC分类号： C09D5/00

    CPC分类号： C09D5/00 ,  C08J7/047 ,  C08J7/123 ,  C08J2369/00 ,  C08J2381/06 ,  C08J2483/16 ,  C23C14/48 ,  G02F1/133305 ,  H01L51/448 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/31667

    摘要： The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member. The gas barrier film of the invention exhibits an excellent gas barrier capability, excellent transparency, excellent bending resistance, and excellent heat resistance.

    摘要翻译： 本发明提供了一种阻气膜，其包括基底层和设置在基底层的至少一侧的阻气层，所述基底层包括玻璃化转变温度（Tg）大于130°的树脂 气体阻隔层由至少包含氧原子和硅原子的材料形成，阻气层的表面层部分的氧原子含有率为60〜75％，氮原子含有率 为0〜10％，硅原子含有率为25〜35％，基于氧原子，氮原子和硅原子的总含有率，阻气层的表层部分的膜密度为 2.4〜4.0g / cm 3。 还提供了制造该方法的方法，包括阻气膜的电子器件部件和包括该电子器件部件的电子器件。 本发明的阻气膜表现出优异的阻气性，优异的透明性，优异的耐弯曲性和优异的耐热性。