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    Method For Producing Negative Electrode For Lithium Secondary Battery
    3.
    发明申请
    Method For Producing Negative Electrode For Lithium Secondary Battery 审中-公开
    锂二次电池负极生产方法

    公开(公告)号：US20080095930A1

    公开(公告)日：2008-04-24

    申请号：US11575466

    申请日：2005-09-05

    申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma

    发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma

    IPC分类号： B05D5/12

    CPC分类号： H01M4/0426 ,  H01M4/1391 ,  H01M4/485 ,  H01M4/525 ,  H01M4/661 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027 ,  Y10T29/49115

    摘要： The lowness of the initial efficiency which is a drawback of lithium secondary batteries wherein a SiO negative electrode is used is largely made better without hindering a large initial charge capacity peculiar to the lithium secondary batteries. A fall in the cycle characteristic when the thickness of the SiO layer is made large is prevented. To realize these matters, a thin film of SiO is formed, as a negative electrode active material layer, on the surface of a current collector by vacuum evaporation or sputtering. The film is preferably formed by an ion plating process. The thickness of the SiO thin film is set to 5 μm or more. The surface roughness of the current collector is set to follows: the maximum height roughness Rz=5.0 or more. After the formation of the thin film, the film is thermally treated in a nonoxidative atmosphere.

    摘要翻译： 作为使用了SiO负极的锂二次电池的缺点的初始效率的低度大大地变得更好，而不会妨碍锂二次电池特有的大的初始充电能力。 防止了当SiO层的厚度变大时的循环特性的下降。 为了实现这些目的，通过真空蒸发或溅射在集电体的表面上形成SiO的薄膜作为负极活性物质层。 该膜优选通过离子镀工艺形成。 SiO薄膜的厚度设定为5μm以上。 集电体的表面粗糙度设定为：最大高度粗糙度Rz = 5.0以上。 薄膜形成后，在非氧化气氛中进行热处理。

    Sintered object of silicon monoxide and method for producing the same
    4.
    发明申请
    Sintered object of silicon monoxide and method for producing the same 失效
    一氧化硅的烧结体及其制造方法

    公开(公告)号：US20050085095A1

    公开(公告)日：2005-04-21

    申请号：US10501996

    申请日：2002-11-29

    申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

    发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

    IPC分类号： C04B35/14 ,  C04B35/645 ,  C23C14/24 ,  C23C14/34 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C04B35/645 ,  C04B35/14 ,  C04B2235/3418 ,  C04B2235/5427 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/79

    摘要： A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 μm, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

    摘要翻译： 提供用作形成氧化硅薄膜的材料的一氧化硅的烧结体，其中通过将样品在1,300℃的加热温度和真空气氛中，即在 10Pa以下的压力相对于测定前的样品不超过4质量％。 该烧结体可以通过在非氧气氛中烧结粒径不小于250μm的SiO粒子，或者在其压制成型之后或在其压制成形期间来制造。 该烧结体的蒸发速度高，并且当其用作成膜材料时，可以预期提高生产氧化硅薄膜的生产率。 因此，可以广泛地应用于形成用作电绝缘膜，机械保护膜，光学膜，食品包装材料的阻隔膜等的氧化硅薄膜等。

    Lighting Apparatus Having Excellent Air Purifying Property
    7.
    发明申请
    Lighting Apparatus Having Excellent Air Purifying Property 审中-公开
    具有优异空气净化性能的照明设备

    公开(公告)号：US20090291029A1

    公开(公告)日：2009-11-26

    申请号：US12308107

    申请日：2007-06-12

    申请人： Tadashi Ogasawara ,  Toshiaki Matsuo ,  Shinji Shimosaki ,  Kazuomi Azuma ,  Yoji Mitani

    发明人： Tadashi Ogasawara ,  Toshiaki Matsuo ,  Shinji Shimosaki ,  Kazuomi Azuma ,  Yoji Mitani

    IPC分类号： A61L9/20

    CPC分类号： A61L9/205 ,  A61L9/18 ,  A61L2209/12 ,  B01J35/004 ,  G09F13/00

    摘要： A full spectrum light emitting lamp and one or more translucent base bodies surrounding the lamp are disposed in the lighting apparatus, the one or more translucent bas bodies having a photocatalytic reaction layer which bears a photocatalyst made of a titanium dioxide thin film therein, or the one or more translucent base bodies having the photocatalytic reaction layer which bears the photocatalyst made of the titanium dioxide thin film therein and having infrared light-absorbing functions, and a space through which air can flow is formed between the lamp and the translucent base body. Therefore, an ultraviolet light, a visible light and an infrared light can effectively be utilized according to characteristics such as an air purifying function of the ultraviolet light, a lighting function of the visible light, and a heating function of the infrared light to thereby save optical energy emitted from the lamp. Further, forced convection is generated in the air flow space by a heating effect of the infrared light emitted from the lamp in addition to a heating effect of the optical energy emitted from the lamp, so that the air can sufficiently be ventilated to promote an air purifying effect.

    摘要翻译： 全光源发光灯和围绕灯的一个或多个半透明基体设置在照明装置中，一个或多个半透明基体具有光催化反应层，该反应层承载由二氧化钛薄膜制成的光催化剂，或者 一个或多个具有光催化反应层的半透明基体，其承载由其中的二氧化钛薄膜制成的光催化剂并具有红外光吸收功能，并且在灯和半透明基体之间形成空气可以流过的空间。 因此，可以根据紫外线的空气净化功能，可见光的发光功能，红外光的加热功能等特性有效地利用紫外线，可见光和红外线，从而节省 从灯发出的光能。 此外，除了从灯发出的光能的加热效应之外，还通过从灯发出的红外线的加热效应在空气流动空间中产生强制对流，使得空气可以充分通风以促进空气 净化效果。

    Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film
    8.
    发明授权
    Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film 失效
    溅射靶，其制造方法，通过使用这种溅射靶形成的溅射薄膜，以及使用这种薄膜的有机EL器件

    公开(公告)号：US08029655B2

    公开(公告)日：2011-10-04

    申请号：US11996550

    申请日：2006-07-03

    申请人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

    发明人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3414 ,  C23C14/08 ,  H01B1/08 ,  H01L51/5253 ,  H05B33/26

    摘要： Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.

    摘要翻译： 本发明提供能够赋予溅射膜高的阻水性和高柔性的溅射靶，能够在溅射中保持高的成膜速度，并且可能会对要形成的膜的目标物质造成损害 尽可能。 为了实现这一点，将含有20〜80重量％的SiO粉末，剩余的粉末由TiO 2粉末和/或Ti粉末制成的混合粉末进行压制和烧结。 该烧结体具有SiαTi＆bgr;Oγ的组成，其中α，bgr; 和γ分别为Si，Ti和O的摩尔比，α/ 范围为0.45〜7.25，γ/（α+和bgr）的比例范围为0.80〜1.70。

    SPUTTERING TARGET, METHOD FOR PRODUCING SAME, SPUTTERING THIN FILM FORMED BY USING SUCH SPUTTERING TARGET, AND ORGANIC EL DEVICE USING SUCH THIN FILM
    9.
    发明申请
    SPUTTERING TARGET, METHOD FOR PRODUCING SAME, SPUTTERING THIN FILM FORMED BY USING SUCH SPUTTERING TARGET, AND ORGANIC EL DEVICE USING SUCH THIN FILM 失效
    溅射靶，其制造方法，使用这种溅射靶材形成的溅射薄膜以及使用这种薄膜的有机EL器件

    公开(公告)号：US20090127108A1

    公开(公告)日：2009-05-21

    申请号：US11996550

    申请日：2006-07-03

    申请人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

    发明人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

    IPC分类号： C23C14/34 ,  B22F3/10 ,  B27N3/02

    CPC分类号： C23C14/3414 ,  C23C14/08 ,  H01B1/08 ,  H01L51/5253 ,  H05B33/26

    摘要： Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.

    摘要翻译： 本发明提供能够赋予溅射膜高的阻水性和高柔性的溅射靶，能够在溅射中保持高的成膜速度，并且可能会对要形成的膜的目标物质造成损害 尽可能。 为了实现这一点，将含有20〜80重量％的SiO粉末，剩余的粉末由TiO 2粉末和/或Ti粉末制成的混合粉末进行压制并烧结。 烧结体具有SialphaTibetaOgamma的组成，其中α，β和γ分别是Si，Ti和O的摩尔比，α/β范围在0.45至7.25之间，γ/（α+β）的比例 从0.80到1.70。