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1.发明授权公开(公告)号：US07973914B2
公开(公告)日：2011-07-05
申请号：US12700506
申请日：2010-02-04
CPC分类号： G01K11/3206 , G01B11/18 , G01D5/35303 , G01K2007/166 , G01L1/246
摘要： A physical quantity measuring apparatus utilizing optical frequency domain reflectometry includes a tunable laser; a first polarization maintaining fiber; a polarization maintaining coupler; a second polarization maintaining fiber; a third polarization maintaining fiber; a sensor consists of a fiber Bragg grating formed in a core of the third polarization maintaining fiber; a fourth polarization maintaining fiber; a photodiode detects Bragg reflected light from the sensor and reference light from the referential reflecting end; a controller that detects modulation of an interference intensity between the Bragg reflected light and the reference light; and an incidence part that inputs the measuring light, wherein the incidence part being provided on the first polarization maintaining fiber or on both the second polarization maintaining fiber and the third polarization maintaining fiber.
摘要翻译： 利用光频域反射测量的物理量测量装置包括可调激光器; 第一种保偏光纤; 偏振保持耦合器; 第二偏振保持光纤; 第三种保偏光纤; 传感器由形成在第三偏振保持光纤的芯中的光纤布拉格光栅组成; 第四种保偏光纤; 光电二极管检测来自传感器的布拉格反射光和参考反射端的参考光; 检测布拉格反射光与参考光之间的干涉强度的调制的控制器; 以及输入测量光的入射部分，其中所述入射部分设置在所述第一偏振保持光纤上，或者设置在所述第二偏振光纤和所述第三偏振光纤上。
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2.发明授权公开(公告)号：US07889332B2
公开(公告)日：2011-02-15
申请号：US12705361
申请日：2010-02-12
CPC分类号： G01K11/3206 , G01B11/18 , G01D5/35303 , G01D5/35316 , G01D5/3538 , G01D5/35393 , G01L1/246
摘要： A physical quantity measuring apparatus utilizing optical frequency domain reflectometry of the invention includes a tunable laser; a first polarization-maintaining fiber; a polarization-maintaining coupler; a second polarization-maintaining fiber; a third polarization-maintaining fiber; a sensor consists of fiber Bragg gratings formed at a core of the third polarization-maintaining fiber; a fourth polarization-maintaining fiber; a photodiode detects Bragg reflected light from the sensor and reference light from the referential reflecting end; a controller detects a modulation of an interference intensity between the Bragg reflected light and the reference light, based on an intensity change of multiplexed light of the Bragg reflected light and the reference light; an incidence part inputs the measuring light; and an optical path-length adjuster arranged on the third polarization-maintaining fiber; the incidence part provided on the first polarization-maintaining fiber, or on both the second and third polarization-maintaining fibers.
摘要翻译： 利用本发明的光频域反射测量的物理量测量装置包括可调激光器; 第一偏振保持光纤; 偏振保持耦合器; 第二偏振保持光纤; 第三偏振保持光纤; 传感器由形成在第三偏振保持光纤的芯处的光纤布拉格光栅组成; 第四偏振保持光纤; 光电二极管检测来自传感器的布拉格反射光和参考反射端的参考光; 控制器基于布拉格反射光和参考光的多路复用光的强度变化来检测布拉格反射光和参考光之间的干涉强度的调制; 入射部分输入测量光; 以及光路长度调节器，布置在所述第三偏振保持光纤上; 所述入射部分设置在第一偏振保持光纤上，或者在第二和第三偏振保持光纤上。
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3.发明申请公开(公告)号：US20060208260A1
公开(公告)日：2006-09-21
申请号：US11344006
申请日：2006-02-01
申请人： Ken Sakuma , Naoki Kimura , Koji Omichi , Naoto Hirosaki
发明人： Ken Sakuma , Naoki Kimura , Koji Omichi , Naoto Hirosaki
IPC分类号： H01L29/15 , G02B5/20 , H01L31/0256
CPC分类号： C04B35/597 , C04B35/6261 , C04B2235/3208 , C04B2235/3224 , C04B2235/3865 , C04B2235/3873 , C04B2235/3895 , C04B2235/442 , C04B2235/5436 , C04B2235/766 , C09K11/0883 , C09K11/7734 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Powdered fluorescent material excited by visible light that emits visible light has particles with particle sizes of 20 μm or less in the content of below 2% by mass. The method for manufacturing a powdered fluorescent material comprises the steps of: sintering raw material powder of the fluorescent material; and chemically processing the sintered powder after said sintering with acid solution.
摘要翻译： 通过发出可见光的可见光激发的粉状荧光体的含量为2质量％以下的粒径为20μm以下的粒子。 粉末荧光体的制造方法包括以下步骤：烧结荧光材料的原料粉末; 并在酸溶液烧结后对烧结粉末进行化学处理。
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公开(公告)号：US08641274B2
公开(公告)日：2014-02-04
申请号：US13112457
申请日：2011-05-20
申请人： Koji Omichi , Yoshihiro Terada , Yutaka Endoh , Kazuyuki Hayashi , Katsuaki Izoe , Kazuhiko Aikawa , Manabu Kudoh
发明人： Koji Omichi , Yoshihiro Terada , Yutaka Endoh , Kazuyuki Hayashi , Katsuaki Izoe , Kazuhiko Aikawa , Manabu Kudoh
CPC分类号： G02B6/024 , G01K11/3206 , G01L1/246
摘要： The polarization-maintaining fiber of the invention includes a core (1) made of germanium doped silica glass; a stress-applying part (3) made of boron doped silica glass; a cladding (2) made of pure silica glass; and a polyimide coating layer (4) with a thickness of 10 μm or less that surrounds the outer periphery of the cladding (2).
摘要翻译： 本发明的偏振保持光纤包括由锗掺杂石英玻璃制成的芯（1）; 由硼掺杂的石英玻璃制成的应力施加部分（3） 由纯石英玻璃制成的包层（2） 以及包围包层（2）的外周的厚度为10μm以下的聚酰亚胺涂层（4）。
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公开(公告)号：US07608862B2
公开(公告)日：2009-10-27
申请号：US11067741
申请日：2005-03-01
申请人： Ken Sakuma , Koji Omichi , Naoto Hirosaki
发明人： Ken Sakuma , Koji Omichi , Naoto Hirosaki
CPC分类号： H01L33/502 , C09K11/0883 , C09K11/7734 , H01L33/483 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting device comprises at least two lead wires, a light emitting element that is disposed on an end portion of at least one of said lead wires and connected electrically with the end portion and the other lead wire, and a phosphor that absorbs at least part of the light emitted from said light emitting element and emanates light having different wavelengths from the wavelength of the light emitted from said light emitting element, wherein the excitation spectrum of said phosphor has a flat region in a wavelength range including a primary wavelength of the light from said light emitting element.
摘要翻译： 发光装置包括至少两根引线，发光元件设置在至少一个所述引线的端部上并与端部和另一引线电连接，以及至少吸收至少一个的磷光体 从所述发光元件发射的光的一部分并且发射与从所述发光元件发射的光的波长不同的波长的光，其中所述磷光体的激发光谱具有波长范围内的平坦区域，所述波长范围包括 来自所述发光元件的光。
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公开(公告)号：US20050194604A1
公开(公告)日：2005-09-08
申请号：US11067741
申请日：2005-03-01
申请人： Ken Sakuma , Koji Omichi , Naoto Hirosaki
发明人： Ken Sakuma , Koji Omichi , Naoto Hirosaki
CPC分类号： H01L33/502 , C09K11/0883 , C09K11/7734 , H01L33/483 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting device comprises at least two lead wires, a light emitting element that is disposed on an end portion of at least one of said lead wires and connected electrically with the end portion and the other lead wire, and a phosphor that absorbs at least part of the light emitted from said light emitting element and emanates light having different wavelengths from the wavelength of the light emitted from said light emitting element, wherein the excitation spectrum of said phosphor has a flat region in a wavelength range including a primary wavelength of the light from said light emitting element.
摘要翻译： 发光装置包括至少两根引线，发光元件设置在至少一个所述引线的端部上并与端部和另一引线电连接，以及至少吸收至少一个的磷光体 从所述发光元件发射的光的一部分并且发射与从所述发光元件发射的光的波长不同的波长的光，其中所述磷光体的激发光谱具有波长范围内的平坦区域，所述波长范围包括 来自所述发光元件的光。
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公开(公告)号：US20090260563A1
公开(公告)日：2009-10-22
申请号：US12305802
申请日：2007-06-22
IPC分类号： H01L21/322 , C30B23/00
CPC分类号： C23C14/086 , C23C14/46 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/0242 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631
摘要： A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10−4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.
摘要翻译： 一种氧化锌系半导体晶体的制造方法，其特征在于，包括：在基板的表面上至少引入锌和氧; 以及在衬底上生长氧化锌基半导体晶体，其中锌的全部或部分部分在1×10 -4 Torr或更小的真空气氛中离子化，并被引入衬底的表面以生长ZnO基半导体 水晶。 结果，可以提供一种能够生长具有优异的表面平坦度和结晶度并且以高生长速率包含极少量的杂质的氧化锌半导体晶体的氧化锌基半导体晶体的制造方法。
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8.发明授权公开(公告)号：US07046872B2
公开(公告)日：2006-05-16
申请号：US10367948
申请日：2003-02-19
申请人： Ken Sakuma , Daigo Fujita , Hirokuni Ogawa , Koji Omichi , Hideyuki Hosoya
发明人： Ken Sakuma , Daigo Fujita , Hirokuni Ogawa , Koji Omichi , Hideyuki Hosoya
IPC分类号： G02B6/26
CPC分类号： G02F1/3137 , G02B6/266 , G02B6/3546 , G02B6/3596 , G02B2006/12145 , G02B2006/12147 , G02F1/0147 , G02F1/1334 , G02F2203/48
摘要： This two input two output type optical switch includes four one input two output type optical switches which are arranged to oppose one another, each of these one input two output type optical switches including a Y branch portion in which one optical waveguide is branched into two optical waveguides. And two refractive index adjustment means are provided in the vicinity of each Y branch portion. Switching over of the optical path is performed by half of the refractive index adjustment means functioning alternately. Moreover, a light output intensity variable attenuation function which attenuates by any desired amount the intensity of the light which is being outputted is implemented, at some input port and/or output port, by operating at least one of the refractive index adjustment means which is not currently being used for switching over of the optical path.
摘要翻译： 这种两输入双输出型光开关包括相互相对配置的四个一输入二输出型光开关，这些一输入两输出型光开关分别包括一Y光分支部分，其中一个光波导分支成两个光 波导。 并且在每个Y分支部分附近设置两个折射率调节装置。 折射率调节装置的一半交替地进行光路的切换。 此外，通过操作折射率调节装置中的至少一个，在某些输入端口和/或输出端口处实现通过任何所需量衰减正在输出的光的强度的光输出强度可变衰减函数， 当前不用于切换光路。
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公开(公告)号：US08268075B2
公开(公告)日：2012-09-18
申请号：US12305802
申请日：2007-06-22
CPC分类号： C23C14/086 , C23C14/46 , C30B23/02 , C30B29/16 , H01L21/02403 , H01L21/0242 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631
摘要： A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10−4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.
摘要翻译： 一种氧化锌系半导体晶体的制造方法，其特征在于，包括：在基板的表面上至少引入锌和氧; 以及在衬底上生长氧化锌基半导体晶体，其中锌的全部或部分部分在1×10 -4乇或更小的真空气氛中离子化，并被引入衬底的表面以使ZnO 基于半导体晶体。 结果，可以提供一种能够生长具有优异的表面平坦度和结晶度并且以高生长速率包含极少量的杂质的氧化锌半导体晶体的氧化锌基半导体晶体的制造方法。
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10.发明授权Phosphor and an incandescent lamp color light emitting diode lamp using the same 有权荧光粉和白炽灯彩色发光二极管灯使用相同公开(公告)号：US08508119B2
公开(公告)日：2013-08-13
申请号：US11178363
申请日：2005-07-12
申请人： Ken Sakuma , Koji Omichi , Naoki Kimura , Masakazu Ohashi , Daiichiro Tanaka , Naoto Hirosaki
发明人： Ken Sakuma , Koji Omichi , Naoki Kimura , Masakazu Ohashi , Daiichiro Tanaka , Naoto Hirosaki
CPC分类号： C09K11/7734 , C04B35/597 , C04B35/6261 , C04B35/6262 , C04B35/62695 , C04B35/645 , C04B2235/3208 , C04B2235/3224 , C04B2235/3865 , C04B2235/3878 , C04B2235/442 , C04B2235/5427 , C09K11/0883 , H01L33/502 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H05B33/14 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An incandescent lamp color light emitting diode lamp comprises a semiconductor blue light emitting diode chip having a center emission wavelength in a range of from 400 nm to 480 nm and a phosphor that absorbs light emitted from the diode chip to emit light having a different wavelength than the light emitted from the diode chip. The phosphor is represented by a general formula of Mp(Si, Al)12(O, N)16:Eu2+q. The main phase is an α-SiAlON phosphor having an α SiAlON structure, wherein M is at least one element of Ca, Y, Mg, Li, Sc, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Sr and p is from 0.75 to 1.0; and q is between 0.02 and 0.09. The diode lamp emits light having an emission color produced by a mixture of the light emitted from the semiconductor blue light emitting and the light emitted from the α-SiAlON. The chromaticity range thereof falls within the range defined by chromaticity coordinates (x, y) of (0.4775, 0.4283), (0.4594, 0.3971), (0.4348, 0.4185), and (0.4214, 0.3887) on the XYZ chromaticity diagram.
摘要翻译： 白炽灯彩色发光二极管灯包括具有400nm至480nm范围内的中心发射波长的半导体蓝色发光二极管芯片和吸收从二极管芯片发射的光以发射具有不同波长的光的荧光体 从二极管芯片发出的光。 荧光体由通式Mp（Si，Al）12（O，N）16：Eu 2+ +表示。 主相是具有αSiAlON结构的α-SiAlON荧光体，其中M是Ca，Y，Mg，Li，Sc，Pr，Nd，Pm，Sm，Gd，Tb，Dy，Ho，Er中的至少一种元素 ，Tm，Yb，Lu和Sr，p为0.75〜1.0; q在0.02和0.09之间。 二极管灯发射具有由半导体蓝光发射的光和从α-SiAlON发射的光的混合产生的发射颜色的光。 其色度范围落在由XYZ色度图上的（0.4775,0.4283），（0.4594,0.3971），（0.4348,0.4185）和（0.4214,0.3887）的色度坐标（x，y）定义的范围内。
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