摘要:
To deposit a plurality of substances on a substrate while the substrate remains in a low pressure oxygen environment, several target carriers are mounted around the edge of a disc and the disc is rotated to position the targets at the focal point of a fixed laser. The target carriers are themselves rotatable in bearings on the disc and are turned by a sun gear that is carried about the same shaft that turns the disc so that the heat of the laser beam is not concentrated at one spot on the surface of the target. All the apparatus is contained in a oxygen chamber. The substrate is heated and the targets are cooled continuously.
摘要:
Grain boundary, weak-link junctions are formed at a predermined location of a uniform, planar substrate by depositing superconducting film on two sections of the substrate. The film is grown as a bicrystal having two distinct areas of superconducting film whose crystal lattices are rotated with respect to each other, either in-plane or out-of-plane, by more than 5.degree. and less than 90.degree.. The grain boundary acts as a weak link junction. The film can be induced to grow as a bicrystal by depositing intermediate strata such as seed layers or buffer layers or by modifying the growth conditions during deposition.
摘要:
A HTSC layered structure comprising a substrate such as sapphire, a strontium titanate buffer layer and a HTSC film such as YBa.sub.2 Cu.sub.3 O.sub.7 provides a superconductor having lower surface resistance and a narrower transition temperature.
摘要:
A substrate heater for the production of superconducting films utilizing a nickel alloy block uniformly heated with a resistance heating element fully immersed in a brazing material that fills a recess in the block. Massive electric power connectors surround the heating element leads outside the braze material so as to provide a protective heat sink therefor and also to mechanically strengthen the block against warpage.
摘要:
A novel method of producing weak-link grain boundary Josephson junctions in high temperature superconducting thin films is disclosed. These junctions are reliably and reproducibly formed on uniform planar substrates (10) by the action of a seed layer (40) placed intermediate the substrate (10) and the superconductor film (20). The superconductor film (22) grown atop the seed (42) is misoriented from the rest of the film (24) by an angle between 5.degree. and 90.degree.. The grain boundary (30) so formed acts as a high quality weak-link junction for superconductor devices. The performance of these junctions can be improved by the addition of buffer layers (50, 60) between the substrate (10) and the superconductor film (20).
摘要:
Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.
摘要:
Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.
摘要:
A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single-crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.
摘要:
The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.
摘要:
Described are medical devices configured for use in cosmetic surgery. The medical devices include an elongate body member having a proximal end, a distal end, and a plurality of gaps defined therebetween. At least a portion of the body member is associated with one or more layers of a collagenous extracellular matrix (ECM) material. The elongate member can include one or more tissue engaging members. In preferred embodiments, the collagenous extracellular matrix material includes one or more native or non-native bioactive components.