公开(公告)号：US10697073B2

公开(公告)日：2020-06-30

申请号：US15608082

申请日：2017-05-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong Lee ,  Young-Jin Ko ,  Young Joon Baik ,  Jong-Keuk Park ,  Kyeong Seok Lee ,  Inho Kim ,  Doo Seok Jeong

IPC: C25B11/04 ,  C23C16/56 ,  C23C16/503 ,  C23C16/32 ,  C25B11/02 ,  B82Y30/00 ,  B82Y40/00

Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.

公开(公告)号：US11411128B2

公开(公告)日：2022-08-09

申请号：US17069862

申请日：2020-10-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyeonggeun Yu ,  Jeung-hyun Jeong ,  Won Mok Kim ,  Jong-Keuk Park ,  Eunpyung Choi

IPC: H01L31/0463 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/0224

Abstract: Provided is a method of manufacturing a high efficiency flexible thin film solar cell module including a see-thru pattern. The method of manufacturing a flexible thin film solar cell module includes: sequentially forming a light-absorbing layer, a first buffer layer, and a first transparent electrode layer on the release layer; forming a second buffer layer on the exposed bottom surface of the light-absorbing layer; forming a P2 scribing pattern by removing at least one portion of each of the first buffer layer, the light-absorbing layer, and the second buffer layer; forming a second transparent electrode layer on the second buffer layer and the first transparent electrode layer exposed by the P2 scribing pattern; and forming a P4 see-thru pattern by selectively removing at least one portion of the first buffer layer, the light-absorbing layer, the second buffer layer, and the second transparent electrode layer.

公开(公告)号：US09941423B2

公开(公告)日：2018-04-10

申请号：US14803843

申请日：2015-07-20

Applicant: Korea Institute of Science and Technology

Inventor： Jeung-hyun Jeong ,  Won Mok Kim ,  Jong-Keuk Park

IPC: H01L21/00 ,  H01L31/0463 ,  H01L31/0224 ,  H01L31/0749

CPC classification number: H01L31/022425 ,  H01L31/0463 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.

公开(公告)号：US11431291B1

公开(公告)日：2022-08-30

申请号：US17467457

申请日：2021-09-07

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Suyoun Lee ,  Seon Jeong Kim ,  Jong-Keuk Park ,  Inho Kim ,  Kyeong Seok Lee ,  Gyu Weon Hwang ,  Joon Young Kwak ,  Jaewook Kim ,  Yeonjoo Jeong ,  Jongkil Park

IPC: H03B5/24 ,  H01L45/00 ,  H03K17/96

Abstract: A nano-oscillator device includes a switching element configured to be switched to an ON state at a threshold voltage or above and switched to an OFF state below a holding voltage; and a load element connected to the switching element in series. In the nano-oscillator device, vibration characteristics are implemented by using a switching element and a load element connected thereto in series. Also, the oscillation frequency of the output waveform of the oscillator may be adjusted in real time according to a gate voltage by using a field effect transistor serving as a load element. Using a synchronization characteristic in which the oscillation frequency and phase are locked with respect to an external input, it is possible to implement a computing system based on a network in which a plurality of oscillator devices are coupled.

公开(公告)号：US10566478B2

公开(公告)日：2020-02-18

申请号：US15705342

申请日：2017-09-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeung-Hyun Jeong ,  Jong-Keuk Park ,  Won Mok Kim ,  Seung Hee Han ,  Doh Kwon Lee

IPC: H01L31/18 ,  H01L31/0463 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/0468

Abstract: Provided are a thin-film solar cell module structure and a method of manufacturing the same.

公开(公告)号：US12210960B2

公开(公告)日：2025-01-28

申请号：US17205790

申请日：2021-03-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Joon Young Kwak ,  Suyoun Lee ,  Inho Kim ,  Jong-Keuk Park ,  Kyeong Seok Lee ,  Jaewook Kim ,  Jongkil Park ,  YeonJoo Jeong ,  Gyuweon Hwang

IPC: G06N3/063 ,  G11C16/04 ,  G11C16/10 ,  H01L29/792

Abstract: Embodiments of inventive concepts relate to a neuromorphic circuit including a flash memory-based spike regulator capable of generating a stable spike signal with a small number of devices. The neuromorphic circuit may generate a simple and stable spike signal using a flash memory-based spike regulator. Therefore, it is possible to implement a semiconductor neuromorphic circuit at low power and low cost by using the spike regulator of the present invention. Example embodiments of inventive concepts provide a neuromorphic circuit comprising a control signal generator for generating a control signal for generating a pulse signal; and a spike regulator for generating a spike signal in response to the control signal. Wherein the spike regulator comprises a first transistor for switching an input signal transmitted to one terminal to the other terminal in response to the control signal; and a first flash memory type transistor having a drain terminal connected to the other terminal of the first transistor and transferring the switched input signal to a source terminal as a spike signal.

公开(公告)号：US11800705B2

公开(公告)日：2023-10-24

申请号：US17538747

申请日：2021-11-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Joon Young Kwak ,  Eunpyo Park ,  Suyoun Lee ,  Inho Kim ,  Jong-Keuk Park ,  Jaewook Kim ,  Jongkil Park ,  YeonJoo Jeong

IPC: H01L29/788 ,  H01L29/43 ,  H01L29/423 ,  H10B41/30 ,  H01L29/66

CPC classification number: H10B41/30 ,  H01L29/42324 ,  H01L29/437 ,  H01L29/66825 ,  H01L29/788

Abstract: A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.