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    Hydrogen absorbing alloy electrode and method of producing the same
    1.
    发明授权
    Hydrogen absorbing alloy electrode and method of producing the same 失效
    吸氢合金电极及其制造方法

    公开(公告)号：US6139988A

    公开(公告)日：2000-10-31

    申请号：US156877

    申请日：1998-09-18

    申请人： Kouichi Yamaguchi ,  Masatoshi Arai ,  Hiroto Sugahara

    发明人： Kouichi Yamaguchi ,  Masatoshi Arai ,  Hiroto Sugahara

    IPC分类号： H01M4/04 ,  H01M4/24 ,  H01M4/26 ,  H02M4/40

    CPC分类号： H01M4/242 ,  H01M4/04 ,  Y10S420/90

    摘要： A hydrogen absorbing alloy electrode having on a conductive support a layer which contains as a main component a hydrogen absorbing alloy powder capable of absorbing and releasing hydrogen electrochemically and is covered with a fluorine-containing water repellent layer on the surface side; with the fluorine-containing water repellent layer being a layer formed by coating and curing a water repellent agent comprising (A) a straight-chain perfluorinated compound having at least two secondary amino groups per molecule and a divalent perfluoroalkylene or perfluoropolyether structure in the main chain and (B) a fluorine-containing epoxy compound having at least three epoxy groups per molecule.

    摘要翻译： 一种吸氢合金电极，其在导电支撑体上具有以电解吸收和释放氢并以表面侧覆盖有氟斥水层为主要成分的吸氢合金粉末的层; 含氟防水层是通过涂布和固化防水剂形成的层，其包含（A）每分子具有至少两个仲氨基的直链全氟化合物和主链中的二价全氟亚烷基或全氟聚醚结构 和（B）每分子具有至少三个环氧基的含氟环氧化合物。

    Fluorinated amide compounds
    2.
    发明授权
    Fluorinated amide compounds 失效
    氟化酰胺化合物

    公开(公告)号：US6031131A

    公开(公告)日：2000-02-29

    申请号：US158574

    申请日：1998-09-22

    申请人： Kouichi Yamaguchi ,  Noriyuki Koike ,  Hirofumi Kishita ,  Masatoshi Arai

    发明人： Kouichi Yamaguchi ,  Noriyuki Koike ,  Hirofumi Kishita ,  Masatoshi Arai

    IPC分类号： C08G69/26 ,  C07C233/36 ,  C07D295/185 ,  C08G69/40 ,  C08G69/42 ,  C07C233/05

    CPC分类号： C07D295/185 ,  C07C233/36

    摘要： The invention is directed at novel fluorinated amide compounds of formula (1): ##STR1## wherein Rf is a divalent perfluoroalkylene or perfluoro-polyether group, X is a group of formula (2), (3) or (4), and m is an integer inclusive of 0. ##STR2## R.sub.1 is a monovalent hydrocarbon group, and R.sup.2 is a divalent hydrocarbon group. These compounds can be used to obtain elastomers or cured resins having a high fluorine content and a low surface energy, making them effective as starting materials in the production of chemical and isolvent-resistant elastomeric materials, parting agents, and water repellents.

    摘要翻译： 本发明涉及式（1）的新型氟化酰胺化合物：其中Rf是二价全氟亚烷基或全氟聚醚基团，X是式（2），（3）或（4）的基团，m是整数 包括0. R1是一价烃基，R2是二价烃基。 这些化合物可用于获得具有高氟含量和低表面能的弹性体或固化树脂，使其在生产化学和抗隔离弹性体材料，脱模剂和防水剂时作为起始材料是有效的。

    Fluorine-containing amide compound
    3.
    发明授权
    Fluorine-containing amide compound 失效
    含氟酰胺化合物

    公开(公告)号：US6060618A

    公开(公告)日：2000-05-09

    申请号：US356027

    申请日：1999-07-16

    申请人： Kouichi Yamaguchi ,  Yasushi Yamamoto ,  Masatoshi Arai

    发明人： Kouichi Yamaguchi ,  Yasushi Yamamoto ,  Masatoshi Arai

    IPC分类号： C07F7/12 ,  C07F7/08 ,  C08K5/54 ,  C07F7/10

    CPC分类号： C07F7/0896 ,  C07F7/0818

    摘要： Disclosed is a novel compound which is a perfluoroalkylene dianilide compound represented by the general formula ##STR1## in which Rf is a perfluoroalkylene group optionally interruptrd by oxygen atoms to form an ether linkage and R and R.sup.1 are each a hydrogen atom or a monovalent hydrocarbon group. When this compound has two or more hydrogen atoms directly bonded to the silicon atoms in a molecule, the compound is useful as a crosslinking agent for an organosilicon compound having two or more silicon-bonded vinyl groups in a molecule. Alternatively, the compound having two or more silicon-bonded vinyl groups in a molecule is useful as a crosslinking agent for an organosilicon compound having two or more silicon-bonded hydrogen atoms in a molecule. The dianilide compound is prepared by the coupling reaction between a perfluoroalkylene dicarboxylic acid difluoride and an N-trimethylsilyl-N-(3,5-disilylphenyl) amine compound.

    摘要翻译： 公开了一种新型化合物，它是由通式表示的全氟亚烷基二酰苯胺化合物，其中Rf是任选被氧原子中断以形成醚键的全氟亚烷基，R和R 1各自为氢原子或一价烃基。 当该化合物在分子中具有直接键合到硅原子上的两个或更多个氢原子时，该化合物可用作分子中具有两个或更多个硅键合的乙烯基的有机硅化合物的交联剂。 或者，分子中具有两个以上与硅键合的乙烯基的化合物可用作分子中具有两个以上与硅键合的氢原子的有机硅化合物的交联剂。 二酰苯胺化合物通过全氟亚烷基二羧酸二氟化物和N-三甲基甲硅烷基-N-（3,5-二甲苯基）胺化合物的偶联反应制备。

    Fluorinated amide compounds
    4.
    发明授权
    Fluorinated amide compounds 失效
    氟化酰胺化合物

    公开(公告)号：US6114528A

    公开(公告)日：2000-09-05

    申请号：US456328

    申请日：1999-12-08

    申请人： Kouichi Yamaguchi ,  Noriyuki Koike ,  Hirofumi Kishita ,  Masatoshi Arai

    发明人： Kouichi Yamaguchi ,  Noriyuki Koike ,  Hirofumi Kishita ,  Masatoshi Arai

    IPC分类号： C08G69/26 ,  C07C233/36 ,  C07D295/185 ,  C08G69/40 ,  C08G69/42 ,  C07D403/14

    CPC分类号： C07D295/185 ,  C07C233/36

    摘要： The invention is directed at novel fluorinated amide compounds of formula (1): ##STR1## wherein Rf is a divalent perfluoroalkylene or perfluoropolyether group, X is a group of formula (2), (3) or (4), and m is an integer inclusive of 0. ##STR2## R.sup.1 is a monovalent hydrocarbon group, and R.sup.2 is a divalent hydrocarbon group. These compounds can be used to obtain elastomers or cured resins having a high fluorine content and a low surface energy, making them effective as starting materials in the production of chemical and solvent-resistant elastomeric materials, parting agents, and water repellents.

    摘要翻译： 本发明涉及式（1）的新型氟化酰胺化合物：其中Rf是二价全氟亚烷基或全氟聚醚基团，X是式（2），（3）或（4）的基团，m是包括 R1是一价烃基，R2是二价烃基。 这些化合物可用于获得具有高氟含量和低表面能的弹性体或固化树脂，使其作为生产化学和耐溶剂的弹性体材料，脱模剂和防水剂的起始材料是有效的。

    Flourine-containing curable compositions
    6.
    发明授权
    Flourine-containing curable compositions 失效
    含有植物的可固化组合物

    公开(公告)号：US6111050A

    公开(公告)日：2000-08-29

    申请号：US157576

    申请日：1998-09-21

    申请人： Kouichi Yamaguchi ,  Noriyuki Koike ,  Masatoshi Arai ,  Hirofumi Kishita

    发明人： Kouichi Yamaguchi ,  Noriyuki Koike ,  Masatoshi Arai ,  Hirofumi Kishita

    IPC分类号： C08G18/60 ,  C08G59/30 ,  C08G59/44 ,  C08G59/54 ,  C08G18/32 ,  C08G18/38 ,  C08G18/50 ,  C08G59/18

    CPC分类号： C08G59/54 ,  C08G59/30

    摘要： A fluorine-containing curable composition comprises (A) a linear perfluoro compound having at least two secondary amino groups per molecule and a divalent perfluoroalkylene or divalent perfluoropolyether structure in the main chain, and (B) a crosslinkable fluorinated compound having at least three functional groups which are crosslinkable with the secondary amino groups of (A). This composition readily cures, with standing at room temperature or heating only, to a cured product having excellent solvent and chemical resistance.

    摘要翻译： 含氟可固化组合物包含（A）每分子具有至少两个仲氨基的直链全氟化合物和主链中的二价全氟亚烷基或二价全氟聚醚结构，和（B）具有至少三个官能团的交联性氟化化合物 其可与（A）的仲氨基交联。 该组合物容易地固化在室温或仅加热下固化到具有优异的溶剂和耐化学性的固化产物。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08629526B2

    公开(公告)日：2014-01-14

    申请号：US13233941

    申请日：2011-09-15

    申请人： Tsuyoshi Ohta ,  Masatoshi Arai ,  Miwako Suzuki

    发明人： Tsuyoshi Ohta ,  Masatoshi Arai ,  Miwako Suzuki

    IPC分类号： H01L29/47

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/36 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/861

    摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface.

    摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的多个第二半导体区域，第二导电类型的第三半导体区域和第一电极。 第二区域分别设置在第一层的第一主表面侧。 第三区域设置在第一层的第一主表面侧，以围绕第二区域。 第一电极设置在第一层和第二区域上。 第一层具有第一部分和第二部分。 第二部分具有比第一部分更低的电阻率。 第二部分设置在第二区域之间以及第一部分与第一主表面之间，并且设置在第三区域的外部以及第一部分与第一主表面之间。

    Image sensor, semiconductor device and image sensing method
    8.
    发明授权
    Image sensor, semiconductor device and image sensing method 有权
    图像传感器，半导体器件和图像感测方法

    公开(公告)号：US08576319B2

    公开(公告)日：2013-11-05

    申请号：US12929004

    申请日：2010-12-22

    申请人： Masatoshi Kureta ,  Masatoshi Arai ,  Takeharu Etoh ,  Konoe Etoh ,  Toshiaki Akino

    发明人： Masatoshi Kureta ,  Masatoshi Arai ,  Takeharu Etoh ,  Konoe Etoh ,  Toshiaki Akino

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04

    CPC分类号： H04N5/335 ,  H01L27/14806 ,  H04N5/3592 ,  H04N5/37213 ,  H04N5/3728

    摘要： An image sensor and an image sensing method can obtain image signals with a high S/N ratio in a high-speed image pickup operation. Signal charges are input to input transfer stage 31 of CCD memory 30. Final transfer stage 32 is formed so as to be connected to the input transfer stage 31 and able to transfer signal charges to the input transfer stage 31. In an accumulation mode, read gate 42 and drain gate 40 are not turned on and the next transfer operation of the CCD memory 30 is conducted. The accumulated signal charges are transferred on a stage by stage basis and the signal charges obtained at the first image pickup timing are transferred again straightly to the input transfer stage 31. In this state, the signal charges obtained newly at photoelectric conversion section 20 at the next image pickup timing are injected into the input transfer stage 31 by way of input gate 21. As a result of this operation, the signal charges obtained at the last image pickup timing are added to the signal charges accumulated in the input transfer stage 31 so that integrated signal charges obtained by adding the two sets of signal charges are accumulated in the input transfer stage 31.

    摘要翻译： 图像传感器和图像感测方法可以在高速图像拾取操作中获得具有高S / N比的图像信号。 信号电荷被输入到CCD存储器30的输入传送级31.最终传送级32被形成为连接到输入传送级31并且能够将信号电荷传送到输入传送级31.在累加模式下，读取 门42和漏极门40不导通，并且进行CCD存储器30的下一个传送操作。 累积的信号电荷逐级传送，并且在第一摄像定时获得的信号电荷被直接传送到输入传送级31.在这种状态下，在光电转换部20新获得的信号电荷 下一个图像拾取定时通过输入门21被注入到输入传送级31.作为该操作的结果，在最后图像拾取定时获得的信号电荷被加到累积在输入传送级31中的信号电荷 通过添加两组信号电荷而获得的积分信号电荷被积累在输入传送级31中。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130248995A1

    公开(公告)日：2013-09-26

    申请号：US13607533

    申请日：2012-09-07

    申请人： Tatsuya NISHIWAKI ,  Tsuyoshi Ota ,  Norio Yasuhara ,  Masatoshi Arai ,  Takahiro Kawano

    发明人： Tatsuya NISHIWAKI ,  Tsuyoshi Ota ,  Norio Yasuhara ,  Masatoshi Arai ,  Takahiro Kawano

    IPC分类号： H01L29/78 ,  H01L21/82 ,  H01L27/088

    CPC分类号： H01L29/7827 ,  H01L21/82 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

    摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, a base layer of a second conductivity type placed above the first semiconductor layer, a second semiconductor layer of the first conductivity type placed above the base layer, multiple gate electrodes having upper end is positioned above the upper surface of the base layer, a lower end positioned below the bottom of the base layer, and contacting the first semiconductor layer, the second semiconductor layer, and the base layer through a gate insulating film, insulating component arranged above the gate electrode in which the upper surface is positioned below the upper surface of the second semiconductor layer, and a conductive layer covering the second semiconductor layer from the upper end to the bottom end.

    摘要翻译： 半导体器件包括第一导电类型的第一半导体层，位于第一半导体层上方的第二导电类型的基极层，位于基极层之上的第一导电类型的第二半导体层，具有上端的多个栅电极 位于所述基底层的上表面的上方，位于所述基底层的底部下方的下端，并且通过栅极绝缘膜与所述第一半导体层，所述第二半导体层和所述基底层接触， 栅电极，其上表面位于第二半导体层的上表面下方，以及导电层，其从上端到底端覆盖第二半导体层。