利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

199 条记录 (耗时 0.037 秒)

    Resist composition, method of forming resist pattern and polymeric compound
    3.
    发明授权
    Resist composition, method of forming resist pattern and polymeric compound 有权
    抗蚀剂组合物，抗蚀剂图案和高分子化合物的形成方法

    公开(公告)号：US09104101B2

    公开(公告)日：2015-08-11

    申请号：US13402820

    申请日：2012-02-22

    申请人： Kensuke Matsuzawa ,  Jun Iwashita ,  Yoshitaka Komuro ,  Masatoshi Arai

    发明人： Kensuke Matsuzawa ,  Jun Iwashita ,  Yoshitaka Komuro ,  Masatoshi Arai

    IPC分类号： G03F7/004 ,  G03F7/38 ,  C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  C08F228/06 ,  G03F7/039 ,  G03F7/20

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  C08F228/06 ,  C08F2220/382 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2039 ,  G03F7/38

    摘要： A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.

    摘要翻译： 一种抗蚀剂组合物，其包含在曝光后产生酸的树脂组分，并且在酸的作用下在显影液中显示出改变的溶解性，所述树脂组分包括具有由通式（a0-0-1）表示的结构单元的树脂组分 其中R表示氢原子，1至5个碳原子的烷基或1至5个碳原子的卤代烷基，R 0-1表示单键或二价连接基团，R 2，R 3和R 4各自 独立地表示可以具有非芳香族取代基的直链状，支链状或环状的烷基，或者R3和R4可以与硫原子一起形成环，X表示非芳香族二价连接基团或 单一债券。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08629526B2

    公开(公告)日：2014-01-14

    申请号：US13233941

    申请日：2011-09-15

    申请人： Tsuyoshi Ohta ,  Masatoshi Arai ,  Miwako Suzuki

    发明人： Tsuyoshi Ohta ,  Masatoshi Arai ,  Miwako Suzuki

    IPC分类号： H01L29/47

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/36 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/861

    摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface.

    摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的多个第二半导体区域，第二导电类型的第三半导体区域和第一电极。 第二区域分别设置在第一层的第一主表面侧。 第三区域设置在第一层的第一主表面侧，以围绕第二区域。 第一电极设置在第一层和第二区域上。 第一层具有第一部分和第二部分。 第二部分具有比第一部分更低的电阻率。 第二部分设置在第二区域之间以及第一部分与第一主表面之间，并且设置在第三区域的外部以及第一部分与第一主表面之间。

    Image sensor, semiconductor device and image sensing method
    7.
    发明授权
    Image sensor, semiconductor device and image sensing method 有权
    图像传感器，半导体器件和图像感测方法

    公开(公告)号：US08576319B2

    公开(公告)日：2013-11-05

    申请号：US12929004

    申请日：2010-12-22

    申请人： Masatoshi Kureta ,  Masatoshi Arai ,  Takeharu Etoh ,  Konoe Etoh ,  Toshiaki Akino

    发明人： Masatoshi Kureta ,  Masatoshi Arai ,  Takeharu Etoh ,  Konoe Etoh ,  Toshiaki Akino

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04

    CPC分类号： H04N5/335 ,  H01L27/14806 ,  H04N5/3592 ,  H04N5/37213 ,  H04N5/3728

    摘要： An image sensor and an image sensing method can obtain image signals with a high S/N ratio in a high-speed image pickup operation. Signal charges are input to input transfer stage 31 of CCD memory 30. Final transfer stage 32 is formed so as to be connected to the input transfer stage 31 and able to transfer signal charges to the input transfer stage 31. In an accumulation mode, read gate 42 and drain gate 40 are not turned on and the next transfer operation of the CCD memory 30 is conducted. The accumulated signal charges are transferred on a stage by stage basis and the signal charges obtained at the first image pickup timing are transferred again straightly to the input transfer stage 31. In this state, the signal charges obtained newly at photoelectric conversion section 20 at the next image pickup timing are injected into the input transfer stage 31 by way of input gate 21. As a result of this operation, the signal charges obtained at the last image pickup timing are added to the signal charges accumulated in the input transfer stage 31 so that integrated signal charges obtained by adding the two sets of signal charges are accumulated in the input transfer stage 31.

    摘要翻译： 图像传感器和图像感测方法可以在高速图像拾取操作中获得具有高S / N比的图像信号。 信号电荷被输入到CCD存储器30的输入传送级31.最终传送级32被形成为连接到输入传送级31并且能够将信号电荷传送到输入传送级31.在累加模式下，读取 门42和漏极门40不导通，并且进行CCD存储器30的下一个传送操作。 累积的信号电荷逐级传送，并且在第一摄像定时获得的信号电荷被直接传送到输入传送级31.在这种状态下，在光电转换部20新获得的信号电荷 下一个图像拾取定时通过输入门21被注入到输入传送级31.作为该操作的结果，在最后图像拾取定时获得的信号电荷被加到累积在输入传送级31中的信号电荷 通过添加两组信号电荷而获得的积分信号电荷被积累在输入传送级31中。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130248995A1

    公开(公告)日：2013-09-26

    申请号：US13607533

    申请日：2012-09-07

    申请人： Tatsuya NISHIWAKI ,  Tsuyoshi Ota ,  Norio Yasuhara ,  Masatoshi Arai ,  Takahiro Kawano

    发明人： Tatsuya NISHIWAKI ,  Tsuyoshi Ota ,  Norio Yasuhara ,  Masatoshi Arai ,  Takahiro Kawano

    IPC分类号： H01L29/78 ,  H01L21/82 ,  H01L27/088

    CPC分类号： H01L29/7827 ,  H01L21/82 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

    摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, a base layer of a second conductivity type placed above the first semiconductor layer, a second semiconductor layer of the first conductivity type placed above the base layer, multiple gate electrodes having upper end is positioned above the upper surface of the base layer, a lower end positioned below the bottom of the base layer, and contacting the first semiconductor layer, the second semiconductor layer, and the base layer through a gate insulating film, insulating component arranged above the gate electrode in which the upper surface is positioned below the upper surface of the second semiconductor layer, and a conductive layer covering the second semiconductor layer from the upper end to the bottom end.

    摘要翻译： 半导体器件包括第一导电类型的第一半导体层，位于第一半导体层上方的第二导电类型的基极层，位于基极层之上的第一导电类型的第二半导体层，具有上端的多个栅电极 位于所述基底层的上表面的上方，位于所述基底层的底部下方的下端，并且通过栅极绝缘膜与所述第一半导体层，所述第二半导体层和所述基底层接触， 栅电极，其上表面位于第二半导体层的上表面下方，以及导电层，其从上端到底端覆盖第二半导体层。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120241853A1

    公开(公告)日：2012-09-27

    申请号：US13236588

    申请日：2011-09-19

    申请人： Tsuyoshi OHTA ,  Masatoshi Arai ,  Miwako Suzuki

    发明人： Tsuyoshi OHTA ,  Masatoshi Arai ,  Miwako Suzuki

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/7806 ,  H01L29/872 ,  H01L29/8725

    摘要： A semiconductor layer has a second impurity concentration. First trenches are formed in the semiconductor layer to extend downward from an upper surface of the semiconductor layer. Each of insulation layers is formed along each of the inner walls of the first trenches. Each of conductive layers is formed to bury each of the first trenches via each of the insulation layers, and extends downward from the upper surface of the semiconductor layer to a first position. A first semiconductor diffusion layer reaches a second position from the upper surface of the semiconductor layer, is positioned between the first trenches, and has a third impurity concentration lower than the second impurity concentration. A length from the upper surface of the semiconductor layer to the second position is equal to or less than half a length from the upper surface of the semiconductor layer to the first position.

    摘要翻译： 半导体层具有第二杂质浓度。 第一沟槽形成在半导体层中，从半导体层的上表面向下延伸。 每个绝缘层沿着第一沟槽的每个内壁形成。 每个导电层被形成为经由每个绝缘层埋入每个第一沟槽，并且从半导体层的上表面向下延伸到第一位置。 第一半导体扩散层从半导体层的上表面到达第二位置，位于第一沟槽之间，并且具有低于第二杂质浓度的第三杂质浓度。 从半导体层的上表面到第二位置的长度等于或小于从半导体层的上表面到第一位置的一半长度。

    Image sensor, semiconductor device and image sensing method
    10.
    发明申请
    Image sensor, semiconductor device and image sensing method 有权
    图像传感器，半导体器件和图像感测方法

    公开(公告)号：US20110157448A1

    公开(公告)日：2011-06-30

    申请号：US12929004

    申请日：2010-12-22

    申请人： Masatoshi Kureta ,  Masatoshi Arai ,  Takeharu Etoh ,  Konoe Etoh ,  Toshiaki Akino

    发明人： Masatoshi Kureta ,  Masatoshi Arai ,  Takeharu Etoh ,  Konoe Etoh ,  Toshiaki Akino

    IPC分类号： H04N5/335 ,  H01L27/148

    CPC分类号： H04N5/335 ,  H01L27/14806 ,  H04N5/3592 ,  H04N5/37213 ,  H04N5/3728

    摘要： An image sensor and an image sensing method can obtain image signals with a high S/N ratio in a high-speed image pickup operation. Signal charges are input to input transfer stage 31 of CCD memory 30. Final transfer stage 32 is formed so as to be connected to the input transfer stage 31 and able to transfer signal charges to the input transfer stage 31. In an accumulation mode, read gate 42 and drain gate 40 are not turned on and the next transfer operation of the CCD memory 30 is conducted. The accumulated signal charges are transferred on a stage by stage basis and the signal charges obtained at the first image pickup timing are transferred again straightly to the input transfer stage 31. In this state, the signal charges obtained newly at photoelectric conversion section 20 at the next image pickup timing are injected into the input transfer stage 31 by way of input gate 21. As a result of this operation, the signal charges obtained at the last image pickup timing are added to the signal charges accumulated in the input transfer stage 31 so that integrated signal charges obtained by adding the two sets of signal charges are accumulated in the input transfer stage 31.

    摘要翻译： 图像传感器和图像感测方法可以在高速图像拾取操作中获得具有高S / N比的图像信号。 信号电荷被输入到CCD存储器30的输入传送级31.最终传送级32被形成为连接到输入传送级31并且能够将信号电荷传送到输入传送级31.在累加模式下，读取 门42和漏极门40不导通，并且进行CCD存储器30的下一个传送操作。 累积的信号电荷逐级传送，并且在第一摄像定时获得的信号电荷被直接传送到输入传送级31.在这种状态下，在光电转换部20新获得的信号电荷 下一个图像拾取定时通过输入门21被注入到输入传送级31.作为该操作的结果，在最后图像拾取定时获得的信号电荷被加到累积在输入传送级31中的信号电荷 通过添加两组信号电荷而获得的积分信号电荷被积累在输入传送级31中。