摘要:
A parts aligner is provided with an attraction means 8 orbitally movable in a specific orbit R, and also provided with a posture shift guide 11, a regulating piece 12 and a thickness sorting guide 13 along a specific circumference P corresponding to the specific orbit R in the order of the direction of orbital movement of the attraction means 8. With this structure, only regular parts shifted into a specific posture are guided to an alignment and feed guide 14 and irregular parts are stored in an irregular parts storing part 16.
摘要:
A parts aligner is provided with an attraction means 8 orbitally movable in a specific orbit R, and also provided with a posture shift guide 11, a regulating piece 12 and a thickness sorting guide 13 along a specific circumference P corresponding to the specific orbit R in the order of the direction of orbital movement of the attraction means 8. With this structure, only regular parts shifted into a specific posture are guided to an alignment and feed guide 14 and irregular parts are stored in an irregular parts storing part 16.
摘要:
The forward movement of a feed rod 15 of a nut feeder permits pressurization of air in an air chamber 3a defined in a rod holder 3, thereby blowing the air out of the air outlet 20 through an air inlet 21 and an air passage 22. A nut 7 is held on the feed rod 15 by the pressure of the air blow from the air outlet 20.
摘要:
A small-diameter front-end portion of a feed rod is allowed to enter into the screw hole of a nut delivered by a nut chute, and the nut is fed to an intended position by the forward movement of the feed rod. When an abnormal nut having a screw hole into which the small-diameter front-end portion cannot be inserted is delivered, the abnormal nut is prevented from being flicked by the feed rod. In order to achieve this, in a standby state, the small-diameter front-end portion of the feed rod enters a nut receiving chamber and is then stopped. On condition that the abnormal nut is received in the nut receiving chamber, if the feed rod moves forward to enter into the standby state, the abnormal nut is slightly pushed out forward from the nut receiving chamber.
摘要:
A semiconductor device including a nonvolatile memory cell realizes enhancement of reliability and convenience. The semiconductor device includes a nonvolatile memory unit that includes plural overwritable memory cells (CL), and a control circuit that controls access to the nonvolatile memory unit. The control circuit allocates one physical address to a chain memory array CY in the nonvolatile memory unit, for example. The control circuit performs writing to a memory cell (for example, CL0) that is apart of the chain memory array CY according to a first write command with respect to the physical address, and performs writing to a memory cell (for example, CL1) that is another part thereof according to a second write command with respect to the physical address.
摘要:
A random access memory includes a data signal line, a data-synchronization signal line for a data synchronization signal which provides a synchronization signal when data is transmitted to the data signal line, and a setting module. The setting module determines whether the data signal line is set to be a data signal line for common input/output use, a data signal line for output-only use, or a data signal line for input-only use, and further determines whether the data-synchronization signal line is set to be a data-synchronization signal line for common input/output use, a data-synchronization signal line for output-only use, or a data-synchronization signal line for input-only use.
摘要:
A memory controller and data processor have their operation mode switched from the page-on mode for high-speed access to a same page to the page-off mode in response to consecutive events of access to different pages, so that the memory access is performed at a high speed and low power consumption.
摘要:
In a phase change memory, when M bit (8 bits=1 byte) data is written, erase operation and program operation are performed in units of n bit (M>n) data. Further, when M bit data is written, program operation is performed in units of the n bit (M>n) data. Further, when M bit data is read from the memory cell, read operation is performed in units of the n bit (M>n) data. For example, when the data is written into to the phase change memory, the data is not overwritten but program is performed after once erasing the target memory cell. The data size for erasure and the data size for program are made equal. Erase and program operation are performed only for the demanded data size.
摘要:
An external preparation containing the following components (A), (B), (C), and (D): (A) a non-steroidal analgesic/anti-inflammatory agent, (B) a terpene and/or an essential oil containing a terpene, (C) a higher alcohol, and (D) a polyoxyalkylene alkyl ether and/or a polyoxyalkylene alkenyl ether. The external preparation of the present invention has improved skin permeation, and can thus be effective at a low concentration, and also has excellent appearance.
摘要:
A memory system including large-capacity ROM and RAM in which high-speed reading and writing are enabled is provided. A memory system including a non-volatile memory (CHIP1), DRAM (CHIP3), a control circuit (CHIP2) and an information processing device (CHIP4) is configured. Data in FLASH is transferred to SRAM or DRAM in advance to speed up. Data transfer between the non-volatile memory (FLASH) and DRAM (CHIP3) can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction.