公开(公告)号：US07948062B2

公开(公告)日：2011-05-24

申请号：US12339695

申请日：2008-12-19

申请人： Kozo Makiyama ,  Toshihiro Ohki ,  Masahito Kanamura ,  Toshihide Kikkawa

发明人： Kozo Makiyama ,  Toshihiro Ohki ,  Masahito Kanamura ,  Toshihide Kikkawa

IPC分类号： H01L21/00 ,  H01L23/58

CPC分类号： H01L29/66462 ,  H01L21/28264 ,  H01L21/3185 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7787

摘要： A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.

摘要翻译： 一种半导体器件，包括具有形成在半导体衬底上的多个化合物半导体层的化合物半导体层叠结构，覆盖化合物半导体层叠结构的表面的至少一部分的第一绝缘膜和形成在第一衬底上的第二绝缘膜 绝缘膜，其中所述第二绝缘膜包括比所述第一绝缘膜更多的氢。

公开(公告)号：US20090166815A1

公开(公告)日：2009-07-02

申请号：US12339695

申请日：2008-12-19

申请人： Kozo Makiyama ,  Toshihiro Ohki ,  Masahito Kanamura ,  Toshihide Kikkawa

发明人： Kozo Makiyama ,  Toshihiro Ohki ,  Masahito Kanamura ,  Toshihide Kikkawa

IPC分类号： H01L29/06 ,  H01L21/18

CPC分类号： H01L29/66462 ,  H01L21/28264 ,  H01L21/3185 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7787

摘要： A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.

摘要翻译： 一种半导体器件，包括具有形成在半导体衬底上的多个化合物半导体层的化合物半导体层叠结构，覆盖化合物半导体层叠结构的表面的至少一部分的第一绝缘膜和形成在第一衬底上的第二绝缘膜 绝缘膜，其中所述第二绝缘膜包括比所述第一绝缘膜更多的氢。

公开(公告)号：US5818078A

公开(公告)日：1998-10-06

申请号：US517041

申请日：1995-08-21

申请人： Kozo Makiyama ,  Masahiko Takikawa ,  Satoru Asai ,  Yusuke Matsukura ,  Toshihide Kikkawa

发明人： Kozo Makiyama ,  Masahiko Takikawa ,  Satoru Asai ,  Yusuke Matsukura ,  Toshihide Kikkawa

IPC分类号： H01L21/331 ,  H01L21/335 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/737 ,  H01L29/778 ,  H01L29/80 ,  H01L29/90 ,  H01L31/112

CPC分类号： H01L29/66318 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/41725 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7371 ,  H01L29/7783 ,  H01L29/802

摘要： A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.

公开(公告)号：US08816408B2

公开(公告)日：2014-08-26

申请号：US12721052

申请日：2010-03-10

申请人： Kozo Makiyama ,  Toshihide Kikkawa

发明人： Kozo Makiyama ,  Toshihide Kikkawa

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/78 ,  H01L29/20 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/7787 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7843

摘要： A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure; a first protective film formed over the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon; and a second protective film formed over the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film.

摘要翻译： 化合物半导体器件包括化合物半导体层叠结构; 源电极，漏电极和形成在化合物半导体层叠结构上的栅电极; 在所述源电极和所述栅电极之间并且包括硅的所述化合物半导体层叠结构上形成的第一保护膜; 以及形成在所述漏电极和所述栅电极之间的所述化合物半导体层叠结构上并且包含比所述第一保护膜更多的硅的第二保护膜。

公开(公告)号：US20130083569A1

公开(公告)日：2013-04-04

申请号：US13557332

申请日：2012-07-25

申请人： Yuichi Minoura ,  Naoya Okamoto ,  Toshihide Kikkawa ,  Kozo Makiyama ,  Toshihiro Ohki

发明人： Yuichi Minoura ,  Naoya Okamoto ,  Toshihide Kikkawa ,  Kozo Makiyama ,  Toshihiro Ohki

IPC分类号： H01L21/283 ,  H02M5/458 ,  H01L23/48 ,  H01L21/28 ,  H01L29/78

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66212 ,  H01L29/7787 ,  H01L29/872 ,  H02M1/4225 ,  H02M3/33569 ,  H02M2001/007 ,  Y02B70/126

摘要： A passivation film is formed on a compound semiconductor layered structure, an electrode formation scheduled position for the passivation film is thinned by dry etching, a thinned portion of the passivation film is penetrated by wet etching to form an opening, and a gate electrode is formed on the passivation film so as to embed this opening by an electrode material.

摘要翻译： 在化合物半导体层状结构上形成钝化膜，通过干蚀刻使钝化膜的电极形成预定位置变薄，通过湿蚀刻渗透钝化膜的薄化部分以形成开口，形成栅电极 在钝化膜上，以便通过电极材料嵌入该开口。

公开(公告)号：US20100244104A1

公开(公告)日：2010-09-30

申请号：US12721052

申请日：2010-03-10

申请人： Kozo Makiyama ,  Toshihide Kikkawa

发明人： Kozo Makiyama ,  Toshihide Kikkawa

IPC分类号： H01L29/812 ,  H01L21/337

CPC分类号： H01L29/7787 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7843

摘要： A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure; a first protective film formed over the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon; and a second protective film formed over the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film.

摘要翻译： 化合物半导体器件包括化合物半导体层叠结构; 源电极，漏电极和形成在化合物半导体层叠结构上的栅电极; 在所述源电极和所述栅电极之间并且包括硅的所述化合物半导体层叠结构上形成的第一保护膜; 以及形成在所述漏电极和所述栅电极之间的所述化合物半导体层叠结构上并且包含比所述第一保护膜更多的硅的第二保护膜。

公开(公告)号：US08581261B2

公开(公告)日：2013-11-12

申请号：US13276830

申请日：2011-10-19

申请人： Masahito Kanamura ,  Kozo Makiyama

发明人： Masahito Kanamura ,  Kozo Makiyama

IPC分类号： H01L29/778

CPC分类号： H01L21/263 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3228 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output.

公开(公告)号：US08183558B2

公开(公告)日：2012-05-22

申请号：US13023146

申请日：2011-02-08

申请人： Kozo Makiyama ,  Tsuyoshi Takahashi

发明人： Kozo Makiyama ,  Tsuyoshi Takahashi

IPC分类号： H01L29/06

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66431

摘要： A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.

摘要翻译： 化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层，并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜，其形成在所述盖层的上表面上，并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜，具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅电极开口形成在凹部上的栅电极。

公开(公告)号：US08163653B2

公开(公告)日：2012-04-24

申请号：US13099510

申请日：2011-05-03

申请人： Kozo Makiyama

发明人： Kozo Makiyama

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3185 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.

摘要翻译： 半导体器件包括衬底，形成在衬底上的化合物半导体层和由氮化硅组成的保护绝缘膜，其形成在化合物半导体层的表面上，其中间部分的膜密度低于 下部。

公开(公告)号：US20100187576A1

公开(公告)日：2010-07-29

申请号：US12659970

申请日：2010-03-26

申请人： Kozo Makiyama ,  Ken Sawada

发明人： Kozo Makiyama ,  Ken Sawada

IPC分类号： H01L29/808

CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/28114 ,  H01L21/76802 ,  H01L2924/0002 ,  H01L2924/00

摘要： A surface component film (2) is etched using a resist (3) as a mask, and the surface component film (2) is patterned according to the shape of an aperture (3a). This results in a step portion (4) having the same shape as the aperture (3a), with the sidewall (4a) of the step portion (4) exposed through the aperture (3a). The aperture (3a) is spin-coated with a shrink agent, reacted at a first temperature, and developed to shrink the aperture (3a). To control the shrinkage with high accuracy, in the first round of reaction, the aperture is shrunk by, for example, about half of the desired shrinkage. The aperture (3a) is further spin-coated with a shrink agent, reacted at a second temperature, and developed to shrink the aperture (3a). In this embodiment, the second-round shrink process will result in the desired aperture length. The second temperature is adjusted based on the shrinkage in the first round. With respect to a resist using short-wavelength light (short-wavelength resist) or a resist using electron beam (electron beam resist), a minute aperture can be obtained with stable shrink effect and accurate control of the length thereof.