Method to facilitate the printing of electronic components
    2.
    发明申请
    Method to facilitate the printing of electronic components 审中-公开
    促进印刷电子元器件的方法

    公开(公告)号:US20060121182A1

    公开(公告)日:2006-06-08

    申请号:US11004080

    申请日:2004-12-03

    IPC分类号: B05D5/12

    摘要: Data regarding printing instructions for an active electronic component are provided (11). These printing instructions will typically comprise instructions regarding the location, geometry, size, orientation, and functional inks used for various component layers as correspond to the electronic component, and are without reference to a specific printing system. This data is then modified (12) as a function of one or more operational proclivities of a particular high throughput additive printing system to provide modified instructions that, when employed to effect the printing of the active electronic component, will improve the resultant yield as compared to the unmodified data.

    摘要翻译: 提供关于有源电子部件的打印指令的数据(11)。 这些打印指令通常将包括关于与电子部件对应的各种部件层使用的位置,几何形状,尺寸,取向和功能油墨的指令,并且不参考特定的打印系统。 随后,将该数据作为特定高通量添加剂打印系统的一个或多个操作方式的函数进行修改(12),以提供修改的指令,当被用于实现有源电子部件的打印时,将提高合成产率 到未修改的数据。

    Semiconductor device and method for providing a reduced surface area electrode
    4.
    发明申请
    Semiconductor device and method for providing a reduced surface area electrode 失效
    用于提供减小的表面积电极的半导体器件和方法

    公开(公告)号:US20070094624A1

    公开(公告)日:2007-04-26

    申请号:US11258634

    申请日:2005-10-26

    IPC分类号: G06F17/50

    摘要: An apparatus (200) such as a semiconductor device comprises a gate electrode (201) and at least a first electrode (202). The first electrode preferably has an established perimeter that at least partially overlaps with respect to the gate electrode to thereby form a corresponding transistor channel. In a preferred approach the first electrode has a surface area that is reduced notwithstanding the aforementioned established perimeter. This, in turn, aids in reducing any corresponding parasitic capacitance. This reduction in surface area may be accomplished, for example, by providing openings (203) through certain portions of the first electrode.

    摘要翻译: 诸如半导体器件的装置(200)包括栅电极(201)和至少第一电极(202)。 第一电极优选地具有与栅电极至少部分重叠的确定的周边,从而形成对应的晶体管沟道。 在优选的方法中,尽管具有上述建立的周长,第一电极具有减小的表面积。 这又有助于减少任何相应的寄生电容。 表面积的这种减小可以例如通过提供通过第一电极的某些部分的开口(203)来实现。

    Method and apparatus to facilitate testing of printed semiconductor devices
    6.
    发明申请
    Method and apparatus to facilitate testing of printed semiconductor devices 审中-公开
    便于测试印刷半导体器件的方法和装置

    公开(公告)号:US20070089540A1

    公开(公告)日:2007-04-26

    申请号:US11258747

    申请日:2005-10-26

    IPC分类号: G01N1/00

    CPC分类号: H01L22/14 H01L51/0005

    摘要: A printing platform receives (102) (preferably in-line with a semiconductor device printing process (101)) a substrate having at least one semiconductor device printed thereon and further having a test structure printed thereon, which test structure comprises at least one printed semiconductor layer. These teachings then provide for the automatic testing (103) of the test structure with respect to at least one static (i.e., relatively unchanging) electrical characteristic metric. The static electrical characteristic metric (or metrics) of choice will likely vary with the application setting but can include, for example, a measure of electrical resistance, a measure of electrical reactance, and/or a measure of electrical continuity. Optionally (though preferably) the semiconductor device printing process itself is then adjusted (105) as a function, at least in part, of this metric.

    摘要翻译: 印刷平台接收(优选地与半导体器件印刷工艺(101)成直角))具有印刷在其上的至少一个半导体器件并且还具有印刷在其上的测试结构的衬底,该测试结构包括至少一个印刷半导体 层。 然后,这些教导提供了关于至少一个静态(即,相对不变的)电特性度量的测试结构的自动测试(103)。 选择的静态电特性度量(或度量)可能随着应用设置而变化,但是可以包括例如电阻的测量,电抗的测量和/或电连续性的测量。 可选地(尽管优选地),然后至少部分地基于该度量来调整(105)半导体器件打印过程本身。

    Method of fabricating organic field effect transistors
    7.
    发明申请
    Method of fabricating organic field effect transistors 失效
    制造有机场效应晶体管的方法

    公开(公告)号:US20050176196A1

    公开(公告)日:2005-08-11

    申请号:US11102166

    申请日:2005-04-08

    摘要: Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.

    摘要翻译: 有机场效应晶体管(OFET)可以通过使用在介质芯的每一侧上具有导电层(204,206)的多层膜(202)在有机膜上快速且低成本地产生。 图案化导电层以形成栅电极(214),并且使用热和压力(225)或粘合剂层(228)将聚合物膜(223)附着到多层电介质膜的栅电极侧。 然后在多层电介质膜的剩余侧上形成源电极和漏电极(236),并且在源电极和漏电极上沉积有机半导体(247),以填充源极和漏极之间的间隙 电极并且接触电介质膜的一部分以产生有机场效应晶体管。