公开(公告)号：US08652869B2

公开(公告)日：2014-02-18

申请号：US13256771

申请日：2009-08-27

申请人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

发明人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

IPC分类号： H01L21/302

CPC分类号： H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

摘要翻译： 粗糙化基板表面的方法包括在形成在半导体基板的表面上的保护膜中形成开口，利用该保护膜作为掩模，使用酸溶液进行第一蚀刻处理，以形成第一凹部 开口及其附近区域，通过使用保护膜作为掩模进行蚀刻处理，以除去形成在第一凹部的表面上的氧化膜，通过使用保护膜作为掩模进行各向异性蚀刻，以形成 在开口及其附近区域的第二凹部，并且去除保护膜。

公开(公告)号：US20120015470A1

公开(公告)日：2012-01-19

申请号：US13256771

申请日：2009-08-27

申请人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

发明人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

IPC分类号： H01L21/302 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

摘要翻译： 粗糙化基板表面的方法包括在形成在半导体基板的表面上的保护膜中形成开口，利用该保护膜作为掩模，使用酸溶液进行第一蚀刻处理，以形成第一凹部 开口及其附近区域，通过使用保护膜作为掩模进行蚀刻处理，以除去形成在第一凹部的表面上的氧化膜，通过使用保护膜作为掩模进行各向异性蚀刻，以形成 在开口及其附近区域的第二凹部，并且去除保护膜。

公开(公告)号：US20120097239A1

公开(公告)日：2012-04-26

申请号：US13378187

申请日：2010-03-30

申请人： Takehiko Sato ,  Kunihiko Nishimura ,  Daisuke Niinobe ,  Shuichi Hiza ,  Shigeru Matsuno

发明人： Takehiko Sato ,  Kunihiko Nishimura ,  Daisuke Niinobe ,  Shuichi Hiza ,  Shigeru Matsuno

IPC分类号： H01L31/0236 ,  H01L31/0232 ,  H01L31/18 ,  B29D11/00

CPC分类号： C03C15/00 ,  C03C2218/355 ,  H01L31/02366 ,  Y02E10/50

摘要： To include a first step of forming a protection film on a surface of a translucent substrate, a second step of exposing the surface of the translucent substrate by forming a plurality of openings arranged regularly at a certain pitch in the protection film, a third step of forming parabolic irregularities including substantially hemispherical depressions arranged substantially uniformly on the surface of the translucent substrate by performing isotropic etching by using the protection film having the openings formed as a mask and under conditions in which the protection film has resistance to the surface of the translucent substrate on which the protection film is formed, and a fourth step of removing the protection film, wherein at the fourth step, the isotropic etching is continued after formation of the parabolic irregularities to separate the protection film from the translucent substrate and round apexes of protruded portions in the parabolic irregularities.

摘要翻译： 为了包括在半透明基板的表面上形成保护膜的第一步骤，通过在保护膜中形成以一定间距规则排列的多个开口来曝光透光性基板的表面的第二步骤，第三步骤 通过使用具有形成为掩模的开口的保护膜并且在保护膜对透光性基板的表面具有阻力的条件下进行各向同性蚀刻，形成包括基本上均匀地布置在透光性基板的表面上的基本上半球状的凹部的抛物面不规则 在其上形成保护膜的第四步骤和去除保护膜的第四步骤，其中在第四步骤中，在形成抛物线不规则物之后继续进行各向同性蚀刻，以将保护膜与透光性基板分离，并且突出部分的圆顶部 在抛物线不规则。

公开(公告)号：US20130206210A1

公开(公告)日：2013-08-15

申请号：US13877594

申请日：2010-10-06

申请人： Daisuke Niinobe ,  Shigeru Matsuno

发明人： Daisuke Niinobe ,  Shigeru Matsuno

IPC分类号： H01L31/052

CPC分类号： H01L31/049 ,  H01L31/048 ,  H01L31/0547 ,  H01L31/056 ,  Y02E10/52

摘要： A solar battery module includes a device array, a substrate, a first sealing portion, a rear-surface protective member, a second sealing portion, and a light scattering portion. The light scattering portion has wavelength selectivity such that an optical reflectivity is not more than 15% over a wavelength region of 500 nanometers to 600 nanometers inclusive, and an optical reflectivity becomes larger than 15% in a wavelength region overlapping on an absorption wavelength range of the photovoltaic device in one of wavelength regions of not more than 350 nanometers and equal to or larger than 700 nanometers, and total integrated scattering of the light scattering portion becomes equal to or larger than 50% in the wavelength region overlapping on the absorption wavelength range of the photovoltaic device in one of the wavelength regions of not more than 350 nanometers and equal to or larger than 700 nanometers.

摘要翻译： 太阳能电池模块包括器件阵列，衬底，第一密封部分，后表面保护部件，第二密封部分和光散射部分。 光散射部分具有波长选择性，使得在500纳米至600纳米的波长范围内的光学反射率不超过15％，并且在与波长范围重叠的波长区域中的光学反射率变得大于15％ 不超过350纳米且等于或大于700纳米的波长区域之一的光电器件，并且在与吸收波长范围重叠的波长区域中，光散射部分的总整体散射变得等于或大于50％ 在不超过350纳米且等于或大于700纳米的波长区域之一中的光电器件。

公开(公告)号：US08039396B2

公开(公告)日：2011-10-18

申请号：US12531905

申请日：2007-12-20

申请人： Kunihiko Nishimura ,  Shigeru Matsuno

发明人： Kunihiko Nishimura ,  Shigeru Matsuno

IPC分类号： H01L21/461

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.

摘要翻译： 提供一种能够容易地形成纵横比大于0.5的纹理的光电器件的制造方法。 制造光伏器件的方法包括以下步骤：在硅衬底上形成耐蚀刻膜; 在抗蚀膜的多个细孔中，将照射的激光束的焦点深度调整为10μm以上，使作为基底层的硅基板的表面露出; 并且蚀刻所述硅衬底的暴露表面，其中暴露所述硅衬底的表面的步骤包括在位于所述硅衬底下方的所述硅衬底的表面中的每个所述细孔的同心位置处形成微细凹槽， 耐性膜。

公开(公告)号：US20100120188A1

公开(公告)日：2010-05-13

申请号：US12531905

申请日：2007-12-20

申请人： Kunihiko Nishimura ,  Shigeru Matsuno

发明人： Kunihiko Nishimura ,  Shigeru Matsuno

IPC分类号： H01L21/308 ,  H01L31/00

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.

摘要翻译： 提供一种能够容易地形成纵横比大于0.5的纹理的光电器件的制造方法。 制造光伏器件的方法包括以下步骤：在硅衬底上形成耐蚀刻膜; 在抗蚀膜的多个细孔中，将照射的激光束的焦点深度调整为10μm以上，使作为基底层的硅基板的表面露出; 并且蚀刻所述硅衬底的暴露表面，其中暴露所述硅衬底的表面的步骤包括在位于所述硅衬底下方的所述硅衬底的表面中的每个所述细孔的同心位置处形成微细凹槽， 耐性膜。

公开(公告)号：US08138442B2

公开(公告)日：2012-03-20

申请号：US12093836

申请日：2005-11-16

申请人： Tatsushi Sato ,  Yoshihito Imai ,  Teiji Takahashi ,  Takeshi Sakata ,  Tomoko Sendai ,  Yoichiro Nishimoto ,  Shigeru Matsuno ,  Takeyuki Maegawa ,  Takaaki Iwata

发明人： Tatsushi Sato ,  Yoshihito Imai ,  Teiji Takahashi ,  Takeshi Sakata ,  Tomoko Sendai ,  Yoichiro Nishimoto ,  Shigeru Matsuno ,  Takeyuki Maegawa ,  Takaaki Iwata

IPC分类号： B23H7/02 ,  H01L21/301 ,  H01L21/306 ,  B23H9/00

CPC分类号： B23H7/02 ,  B23H9/00

摘要： Provided are a wire electric discharge machining method for poorly conductive materials, such as solar cell silicon, and a semiconductor wafer manufacturing method and a solar battery cell manufacturing method based on the wire electric discharge machining method. Electrical discharge machining of a high volume resistivity, hard and brittle materials, having a volume resistivity that is equal to or higher than 0.5 Ω·cm and equal to or lower than 5 Ω·cm is performed by applying a pulse voltage having a pulse width that is equal to or higher than 1 μsec and equal to or lower than 4 μsec and having a peak current at the time of machining a wire electrode that is equal to or higher than 10A and equal to or lower than 50A to a wire electrode and generating a discharge pulse between the wire electrode and a subject to be machined.

摘要翻译： 本发明提供一种导电材料的导电放电加工方法，例如太阳能电池硅，半导体晶片的制造方法以及基于该放电加工方法的太阳能电池单元的制造方法。 具有体积电阻率等于或大于0.5且OHgr·cm且等于或小于5Ω的体积电阻率，硬脆材料的放电加工是通过施加具有 脉冲宽度等于或高于1微秒并且等于或低于4微秒，并且在将线电极加工时的峰值电流等于或高于10A并等于或低于50A的线 并且在线电极和待加工对象之间产生放电脉冲。

公开(公告)号：US20080295770A1

公开(公告)日：2008-12-04

申请号：US12219583

申请日：2008-07-24

申请人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

发明人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

IPC分类号： B05C11/10

CPC分类号： F16K11/207 ,  B01D1/0082 ,  C23C16/448 ,  C23C16/4486 ,  F16K31/1221 ,  Y10S261/65

摘要： In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.

公开(公告)号：US06273957B1

公开(公告)日：2001-08-14

申请号：US09532446

申请日：2000-03-23

申请人： Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Fusaoki Uchikawa ,  Shigeru Matsuno ,  Takehiko Sato ,  Akira Yamada ,  Masayoshi Tarutani

发明人： Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Fusaoki Uchikawa ,  Shigeru Matsuno ,  Takehiko Sato ,  Akira Yamada ,  Masayoshi Tarutani

IPC分类号： C23C1600

CPC分类号： C23C16/4486

摘要： A vaporizing device for chemical vapor deposition (CVD) source materials includes a vaporizer for vaporizing introduced CVD source materials by heating, a spray nozzle of which an end portion is fixedly attached to the vaporizer for spraying the CVD source materials into the vaporizer, a cooling mechanism for cooling the spray nozzle, and a heat conduction restrictor attached to the end portion, proximate of the end portion, or to the vaporizer. Generation of non-vaporized residues and particles is decreased, improving productivity owing to prolongation of continuous operation time of the apparatus and a decrease in film defects.

摘要翻译： 用于化学气相沉积（CVD）源材料的蒸发装置包括用于通过加热蒸发引入的CVD源材料的蒸发器，将其端部固定地附接到蒸发器的喷嘴，用于将CVD源材料喷射到蒸发器中， 用于冷却喷嘴的机构，以及附接到端部附近的端部部分或蒸发器的导热限制器。 不蒸发残留物和颗粒的产生减少，由于设备的连续操作时间的延长以及膜缺陷的减少而提高了生产率。

公开(公告)号：US5372850A

公开(公告)日：1994-12-13

申请号：US18900

申请日：1993-02-17

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/00

CPC分类号： C23C16/409 ,  C23C16/4481

摘要： In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.

摘要翻译： 在使用其中通过CVD法将金属原子与有机基团通过氧原子偶联的原料化合物制造氧化物系介质薄膜的方法中。 沸点低于100℃的有机溶剂的蒸气与原料化合物接触，至少一种蒸发或输送原料化合物的方法。 氧化物系介质薄膜的原料化合物能够在比以前低的温度下稳定地蒸发并输送到反应器。 因此，可以均匀地控制组合物，并且可以制造具有良好性能的氧化物系介电薄膜。