公开(公告)号：US08652869B2

公开(公告)日：2014-02-18

申请号：US13256771

申请日：2009-08-27

申请人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

发明人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

IPC分类号： H01L21/302

CPC分类号： H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

摘要翻译： 粗糙化基板表面的方法包括在形成在半导体基板的表面上的保护膜中形成开口，利用该保护膜作为掩模，使用酸溶液进行第一蚀刻处理，以形成第一凹部 开口及其附近区域，通过使用保护膜作为掩模进行蚀刻处理，以除去形成在第一凹部的表面上的氧化膜，通过使用保护膜作为掩模进行各向异性蚀刻，以形成 在开口及其附近区域的第二凹部，并且去除保护膜。

公开(公告)号：US20120015470A1

公开(公告)日：2012-01-19

申请号：US13256771

申请日：2009-08-27

申请人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

发明人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

IPC分类号： H01L21/302 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

摘要翻译： 粗糙化基板表面的方法包括在形成在半导体基板的表面上的保护膜中形成开口，利用该保护膜作为掩模，使用酸溶液进行第一蚀刻处理，以形成第一凹部 开口及其附近区域，通过使用保护膜作为掩模进行蚀刻处理，以除去形成在第一凹部的表面上的氧化膜，通过使用保护膜作为掩模进行各向异性蚀刻，以形成 在开口及其附近区域的第二凹部，并且去除保护膜。

公开(公告)号：US20120097239A1

公开(公告)日：2012-04-26

申请号：US13378187

申请日：2010-03-30

申请人： Takehiko Sato ,  Kunihiko Nishimura ,  Daisuke Niinobe ,  Shuichi Hiza ,  Shigeru Matsuno

发明人： Takehiko Sato ,  Kunihiko Nishimura ,  Daisuke Niinobe ,  Shuichi Hiza ,  Shigeru Matsuno

IPC分类号： H01L31/0236 ,  H01L31/0232 ,  H01L31/18 ,  B29D11/00

CPC分类号： C03C15/00 ,  C03C2218/355 ,  H01L31/02366 ,  Y02E10/50

摘要： To include a first step of forming a protection film on a surface of a translucent substrate, a second step of exposing the surface of the translucent substrate by forming a plurality of openings arranged regularly at a certain pitch in the protection film, a third step of forming parabolic irregularities including substantially hemispherical depressions arranged substantially uniformly on the surface of the translucent substrate by performing isotropic etching by using the protection film having the openings formed as a mask and under conditions in which the protection film has resistance to the surface of the translucent substrate on which the protection film is formed, and a fourth step of removing the protection film, wherein at the fourth step, the isotropic etching is continued after formation of the parabolic irregularities to separate the protection film from the translucent substrate and round apexes of protruded portions in the parabolic irregularities.

摘要翻译： 为了包括在半透明基板的表面上形成保护膜的第一步骤，通过在保护膜中形成以一定间距规则排列的多个开口来曝光透光性基板的表面的第二步骤，第三步骤 通过使用具有形成为掩模的开口的保护膜并且在保护膜对透光性基板的表面具有阻力的条件下进行各向同性蚀刻，形成包括基本上均匀地布置在透光性基板的表面上的基本上半球状的凹部的抛物面不规则 在其上形成保护膜的第四步骤和去除保护膜的第四步骤，其中在第四步骤中，在形成抛物线不规则物之后继续进行各向同性蚀刻，以将保护膜与透光性基板分离，并且突出部分的圆顶部 在抛物线不规则。

公开(公告)号：US08039396B2

公开(公告)日：2011-10-18

申请号：US12531905

申请日：2007-12-20

申请人： Kunihiko Nishimura ,  Shigeru Matsuno

发明人： Kunihiko Nishimura ,  Shigeru Matsuno

IPC分类号： H01L21/461

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.

摘要翻译： 提供一种能够容易地形成纵横比大于0.5的纹理的光电器件的制造方法。 制造光伏器件的方法包括以下步骤：在硅衬底上形成耐蚀刻膜; 在抗蚀膜的多个细孔中，将照射的激光束的焦点深度调整为10μm以上，使作为基底层的硅基板的表面露出; 并且蚀刻所述硅衬底的暴露表面，其中暴露所述硅衬底的表面的步骤包括在位于所述硅衬底下方的所述硅衬底的表面中的每个所述细孔的同心位置处形成微细凹槽， 耐性膜。

公开(公告)号：US20100120188A1

公开(公告)日：2010-05-13

申请号：US12531905

申请日：2007-12-20

申请人： Kunihiko Nishimura ,  Shigeru Matsuno

发明人： Kunihiko Nishimura ,  Shigeru Matsuno

IPC分类号： H01L21/308 ,  H01L31/00

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.

摘要翻译： 提供一种能够容易地形成纵横比大于0.5的纹理的光电器件的制造方法。 制造光伏器件的方法包括以下步骤：在硅衬底上形成耐蚀刻膜; 在抗蚀膜的多个细孔中，将照射的激光束的焦点深度调整为10μm以上，使作为基底层的硅基板的表面露出; 并且蚀刻所述硅衬底的暴露表面，其中暴露所述硅衬底的表面的步骤包括在位于所述硅衬底下方的所述硅衬底的表面中的每个所述细孔的同心位置处形成微细凹槽， 耐性膜。

公开(公告)号：US20110053310A1

公开(公告)日：2011-03-03

申请号：US12989098

申请日：2008-04-30

申请人： Masato Yonezawa ,  Kimikazu Hazumi ,  Akihiro Takami ,  Hiroaki Morikawa ,  Kunihiko Nishimura

发明人： Masato Yonezawa ,  Kimikazu Hazumi ,  Akihiro Takami ,  Hiroaki Morikawa ,  Kunihiko Nishimura

IPC分类号： H01L31/0352

CPC分类号： H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/068 ,  Y02E10/547

摘要： The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

摘要翻译： 该制造方法包括：在光入射表面侧的整个表面上形成P型硅衬底和其中N型杂质以第一浓度扩散的高浓度N型扩散层; 在高浓度N型扩散层上形成耐腐蚀性膜，在蚀刻电阻膜的凹部形成区域内的规定位置形成细孔; 通过在所述细孔的形成位置周围蚀刻所述硅基板而形成凹部，以便不将所述高浓度N型扩散层留在所述凹部形成区域内; 在其上形成凹部的表面上形成其中N型杂质以低于第一浓度的第二浓度扩散的低浓度N型扩散层; 以及在所述硅衬底的光入射表面侧的电极形成区域中形成栅电极。

公开(公告)号：US07064479B2

公开(公告)日：2006-06-20

申请号：US10485853

申请日：2003-03-26

申请人： Shuhei Nakata ,  Kunihiko Nishimura

发明人： Shuhei Nakata ,  Kunihiko Nishimura

IPC分类号： H01J1/62

CPC分类号： H01J9/148 ,  H01J9/022 ,  H01J29/467 ,  H01J31/12 ,  H01J31/127

摘要： A cold cathode display device which has a small thickness and a large display area, in which an anode can be sufficiently distant from an extraction electrode to ensure a breakdown voltage and an electron beam diameter can be made sufficiently smaller than the size of a phosphor, and a method of manufacturing such a cold cathode display device. A focus electrode is added to a conventional cold cathode display device. The focus electrode is located such that extraction electrodes and cathodes are interposed between the focus electrode and a back substrate. The focus electrode includes electron passage windows located opposite the cathodes and electron passage windows. The focus electrode is attached to, and supported by, the extraction electrodes via an insulating material with a distance being maintained between the focus and extraction electrodes.

摘要翻译： 一种冷阴极显示装置，其具有小的厚度和大的显示区域，其中阳极可以与提取电极充分远离，以确保击穿电压和电子束直径足够小于荧光体的尺寸， 以及制造这种冷阴极显示装置的方法。 将聚焦电极添加到常规冷阴极显示装置中。 聚焦电极被定位成使得引出电极和阴极插入在聚焦电极和背衬底之间。 聚焦电极包括与阴极和电子通道窗口相对的电子通道窗口。 聚焦电极通过绝缘材料附着到提取电极并由其支撑，在聚焦和提取电极之间保持一定距离。

公开(公告)号：US08835333B2

公开(公告)日：2014-09-16

申请号：US13686153

申请日：2012-11-27

申请人： Narihito Ota ,  Kunihiko Nishimura

发明人： Narihito Ota ,  Kunihiko Nishimura

IPC分类号： H01L21/00 ,  H01L21/673 ,  H01L21/223 ,  H01L21/67 ,  H01L31/18

CPC分类号： H01L31/1876 ,  H01L21/223 ,  H01L21/67109 ,  H01L21/67303 ,  Y02E10/50 ,  Y02P70/521

摘要： A heat treatment method of the present invention includes mounting a plurality of semiconductor wafers upright on a treatment boat in parallel to each other, inserting the treatment boat in a space above an injector located in a tube to be oriented to plane surfaces of the semiconductor wafers in parallel to an extending direction of the tube, and heating the tube while continuously supplying source gas into the tube through openings of the injector.

摘要翻译： 本发明的热处理方法包括将多个半导体晶片直立安装在处理舟皿上彼此平行，将处理舟放置在位于管中的喷射器上方的空间中，以定向到半导体晶片的平面表面 平行于管的延伸方向，并且加热管，同时通过注射器的开口将源气体连续供应到管中。

公开(公告)号：US20130062980A1

公开(公告)日：2013-03-14

申请号：US13698797

申请日：2011-05-17

申请人： Takashi Kuwahara ,  Tomoharu Fujii ,  Shigeru Ishii ,  Tatsuya Osone ,  Kunihiko Nishimura

发明人： Takashi Kuwahara ,  Tomoharu Fujii ,  Shigeru Ishii ,  Tatsuya Osone ,  Kunihiko Nishimura

IPC分类号： H02K5/10

CPC分类号： F16D25/083 ,  B60K6/387 ,  B60K6/40 ,  B60K6/405 ,  B60K6/48 ,  B60K6/543 ,  B60K2006/4825 ,  B60L3/0061 ,  B60L11/14 ,  B60L15/20 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2220/50 ,  B60L2240/36 ,  B60L2240/423 ,  B60L2240/507 ,  B60Y2400/4242 ,  F16D25/12 ,  F16D25/123 ,  F16D2048/0287 ,  F16D2300/08 ,  H02K5/10 ,  H02K7/006 ,  Y02T10/6221 ,  Y02T10/6252 ,  Y02T10/641 ,  Y02T10/645 ,  Y02T10/70 ,  Y02T10/7077 ,  Y02T10/7241 ,  Y02T10/7275

摘要： A hybrid driving force transmission device includes a motor generator (9), a multi-plate dry clutch (7), a housing cover (60), a dust seal member (62), and a dust collection structure (63). The multi-plate dry clutch (7) is disposed at a position inner than the motor generator (9). The housing cover (60) is provided to cover the motor generator (9) and the multi-plate dry clutch (7), and divides the internal space into a clutch chamber (64) and a motor chamber (65). The dust seal member (62) is disposed at a position radially outside of a clutch chamber open surface (66) and seals between a rotor (92) and an inner wall (60a) of the housing cover (60). The dust collection structure (63) forms a dust collection space (69) in a region radially between the seal surface (68) formed by the dust seal member (62) and the clutch chamber open surface (66).

摘要翻译： 混合驱动力传递装置包括电动发电机（9），多板干式离合器（7），壳体盖（60），防尘密封件（62）和集尘结构（63）。 多板式干式离合器（7）配置在比电动发电机（9）内的位置。 壳体盖60被设置成覆盖电动发电机9和多板干式离合器7，并将内部空间分成离合器室64和电动机室65。 防尘密封构件62设置在离合器室开放面（66）的径向外侧的位置，密封在转子（92）与壳体盖（60）的内壁（60a）之间。 集尘结构（63）在由防尘密封部件（62）形成的密封面（68）和离合器室开放面（66）之间的径向的区域内形成集尘空间（69）。

公开(公告)号：US09051976B2

公开(公告)日：2015-06-09

申请号：US13698797

申请日：2011-05-17

申请人： Takashi Kuwahara ,  Tomoharu Fuji ,  Shigeru Ishii ,  Tatsuya Osone ,  Kunihiko Nishimura

发明人： Takashi Kuwahara ,  Tomoharu Fuji ,  Shigeru Ishii ,  Tatsuya Osone ,  Kunihiko Nishimura

IPC分类号： H02K5/10 ,  F16D25/08 ,  B60K6/40 ,  B60K6/48 ,  F16D25/12 ,  B60K6/387 ,  B60K6/405 ,  B60K6/543 ,  H02K7/00 ,  F16D48/02

CPC分类号： F16D25/083 ,  B60K6/387 ,  B60K6/40 ,  B60K6/405 ,  B60K6/48 ,  B60K6/543 ,  B60K2006/4825 ,  B60L3/0061 ,  B60L11/14 ,  B60L15/20 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2220/50 ,  B60L2240/36 ,  B60L2240/423 ,  B60L2240/507 ,  B60Y2400/4242 ,  F16D25/12 ,  F16D25/123 ,  F16D2048/0287 ,  F16D2300/08 ,  H02K5/10 ,  H02K7/006 ,  Y02T10/6221 ,  Y02T10/6252 ,  Y02T10/641 ,  Y02T10/645 ,  Y02T10/70 ,  Y02T10/7077 ,  Y02T10/7241 ,  Y02T10/7275

摘要： A hybrid driving force transmission device includes a motor generator (9), a multi-plate dry clutch (7), a housing cover (60), a dust seal member (62), and a dust collection structure (63). The multi-plate dry clutch (7) is disposed at a position inner than the motor generator (9). The housing cover (60) is provided to cover the motor generator (9) and the multi-plate dry clutch (7), and divides the internal space into a clutch chamber (64) and a motor chamber (65). The dust seal member (62) is disposed at a position radially outside of a clutch chamber open surface (66) and seals between a rotor (92) and an inner wall (60a) of the housing cover (60). The dust collection structure (63) forms a dust collection space (69) in a region radially between the seal surface (68) formed by the dust seal member (62) and the clutch chamber open surface (66).

摘要翻译： 混合驱动力传递装置包括电动发电机（9），多板干式离合器（7），壳体盖（60），防尘密封件（62）和集尘结构（63）。 多板式干式离合器（7）配置在比电动发电机（9）内的位置。 壳体盖60被设置成覆盖电动发电机9和多板干式离合器7，并将内部空间分成离合器室64和电动机室65。 防尘密封构件62设置在离合器室开放面（66）的径向外侧的位置，密封在转子（92）与壳体盖（60）的内壁（60a）之间。 集尘结构（63）在由防尘密封部件（62）形成的密封面（68）和离合器室开放面（66）之间的径向的区域内形成集尘空间（69）。