公开(公告)号：US5565694A

公开(公告)日：1996-10-15

申请号：US500043

申请日：1995-07-10

申请人： Kuo-Hsin Huang ,  Tzer-Perng Chen

发明人： Kuo-Hsin Huang ,  Tzer-Perng Chen

IPC分类号： H01L33/02 ,  H01L33/10 ,  H01L33/14 ,  H01L33/00 ,  H04L5/26

CPC分类号： H01L33/02 ,  H01L33/10 ,  H01L33/145

摘要： A light emitting diode includes a first conductivity type GaAs substrate having a second conductivity type region as a current blocking layer. A first conductivity type distributed Bragg reflector layer is formed on the GaAs substrate. An AlGaInP double heterostructure including a lower cladding AlGaInP layer of the first conductivity type, an undoped active AlGaInP layer, and an upper cladding AlGaInP layer of the second conductivity type is grown on top of the distributed Bragg reflector layer. The undoped active AlGaInP layer can also be replaced by a multi-layer quantum well structure of AlGaInP or a strained multi-layer quantum well structure of AlGaInP. A second conductivity type layer of low energy band gap and high conductivity material is formed on the AlGaInP double heterostructure. A GaP window layer of the second conductivity type is then formed on top of the low energy band gap layer.

摘要翻译： 发光二极管包括具有作为电流阻挡层的第二导电类型区域的第一导电型GaAs衬底。 在GaAs衬底上形成第一导电型分布式布拉格反射层。 包括第一导电类型的下包层AlGaInP层，第二导电类型的未掺杂的有源AlGaInP层和上包层AlGaInP层的AlGaInP双异质结构生长在分布式布拉格反射层的顶部。 未掺杂的有源AlGaInP层也可以由AlGaInP的多层量子阱结构或AlGaInP的应变多层量子阱结构代替。 在AlGaInP双异质结构上形成低能带隙和高导电性材料的第二导电类型层。 然后在低能带隙层的顶部形成第二导电类型的GaP窗口层。

公开(公告)号：US5661742A

公开(公告)日：1997-08-26

申请号：US652328

申请日：1996-05-22

申请人： Kuo-Hsin Huang ,  Tzer-Perng Chen

发明人： Kuo-Hsin Huang ,  Tzer-Perng Chen

IPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01S3/19

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14

摘要： A light emitting diode comprises a multiple quantum well structure. The light emitting diode has a first conductivity type GaAs substrate, an AlGaInP lower cladding layer of the first conductivity type, a multiple quantum well structure, an AlGaInP upper cladding layer of a second conductivity type, and a window structure of the second conductivity type. The multiple quantum well structure comprises a plurality of AlGaInP quantum well layers and barrier layers being stacked alternatively on each other. The window structure including a thin layer having low energy band gap and high conductivity GaAs or GaInP, and a thicker layer having high energy band gap and transparent GaP containing a small amount of In. The use of multiple quantum well structure improves the light intensity and the Iv-I curve linearity of the light emitting diode. The small amount of In in the window layer reduces the defect density generated in the GaP layer due to the lattice mismatch between the window layer and the upper cladding layer. Another improvement that includes growing a distributed Bragg reflector layer between the lower cladding layer and substrate is also presented to further increase the luminous efficiency of the light emitting diode.

摘要翻译： 发光二极管包括多量子阱结构。 发光二极管具有第一导电型GaAs衬底，第一导电类型的AlGaInP下包层，多量子阱结构，第二导电类型的AlGaInP上包层和第二导电类型的窗结构。 多量子阱结构包括彼此交替堆叠的多个AlGaInP量子阱层和阻挡层。 该窗结构包括具有低能带隙和高导电性GaAs或GaInP的薄层，以及具有高能带隙的较厚层和含有少量In的透明GaP。 多量子阱结构的使用提高了发光二极管的光强度和Iv-I曲线的线性。 由于窗层和上包层之间的晶格失配，窗口层中的少量In减少了GaP层中产生的缺陷密度。 还提出了包括在下包层和衬底之间生长分布式布拉格反射器层的另一改进，以进一步提高发光二极管的发光效率。

公开(公告)号：US20070131952A1

公开(公告)日：2007-06-14

申请号：US11636522

申请日：2006-12-11

申请人： Kuo-Hsin Huang

发明人： Kuo-Hsin Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/641

摘要： The present invention is to provide a semiconductor device which includes a mounting base and a light-emitting device. The mounting base includes a substrate of a first semiconductor material and a first layer of a material with high thermal conductivity formed over the substrate. Furthermore, the light-emitting device is a multi-layer structure which includes at least a second layer of a second semiconductor material. The light-emitting device is mounted on the first layer of the mounting base. Moreover, the difference of the thermal expansion coefficient between the first semiconductor material and the second semiconductor material is between a predetermined range.

摘要翻译： 本发明提供一种包括安装基座和发光器件的半导体器件。 安装基座包括在衬底上形成的第一半导体材料的衬底和具有高导热性的材料的第一层。 此外，发光装置是包括至少第二层第二半导体材料的多层结构。 发光装置安装在安装基座的第一层上。 此外，第一半导体材料和第二半导体材料之间的热膨胀系数的差在预定范围之间。

公开(公告)号：US20130137560A1

公开(公告)日：2013-05-30

申请号：US13411185

申请日：2012-03-02

申请人： Chang-Chou LI ,  Kuo-Hsin Huang ,  Chin-Lung Liu ,  Chih-Yu Ke

发明人： Chang-Chou LI ,  Kuo-Hsin Huang ,  Chin-Lung Liu ,  Chih-Yu Ke

IPC分类号： F16C13/00

CPC分类号： B65H20/12 ,  B65H2406/1131 ,  B65H2406/361

摘要： A suction-type transmission apparatus includes at least one suction region allocation member and a suction wheel member. The suction region allocation member has a chamber and through holes communicating with the chamber. The suction wheel member is pivoted to the suction region allocation member, and includes an inner lining body with gas flow channels disposed in parallel, and an outer ring sleeve. The inner lining body has gas holes corresponding to the through holes and being in communication with the gas flow channels. The outer ring sleeve with micro-pores in communication with the gas flow channels is sleeved on the inner lining body, and wraps the gas flow channels. The chamber is connected to a gas extraction port, and at least one sealing element is selectively disposed in the chamber to seal at least one of the through holes for forming a suction region of the suction wheel member.

摘要翻译： 吸入式传动装置包括至少一个吸入区域分配构件和吸入轮构件。 吸引区域分配构件具有与室连通的室和通孔。 吸引轮构件枢转到吸入区域分配构件，并且包括具有平行布置的气体流动通道的内衬主体和外部环套筒。 内衬体具有对应于通孔并与气体流动通道连通的气孔。 具有与气流通道连通的微孔的外圈套筒套在内衬体上，并包裹气体流动通道。 腔室连接到气体抽出口，并且至少一个密封元件选择性地设置在腔室中以密封用于形成吸力轮构件的吸入区域的至少一个通孔。

公开(公告)号：US5359209A

公开(公告)日：1994-10-25

申请号：US164915

申请日：1993-12-09

申请人： Kuo-Hsin Huang

发明人： Kuo-Hsin Huang

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L33/02 ,  H01L33/0025 ,  H01L33/14

摘要： A light emitting diode includes a first conductivity type semiconductor substrate, a basic AlGaInP double heterostructure and two window layers of second conductivity type semiconductor. A layer of first conductivity type AlGaInP an undoped AlGaInP layer and a layer of second conductivity type AlGaInP form the double heterostructure. The AlGaInP layers are epitaxially grown above the substrate sequentially. The window layers contain one layer of GaAs and the other layer of GaP. The first window layer is formed by epitaxially growing GaAs over the AlGaInP heterostructure. The second window layer is formed by growing GaP directly on the first window layer using either OMVPE or vapor phase epitaxy (VPE) technology. The inclusion of a GaAs window layer increases current spreading and, hence, the efficiency of the device. The yield rate of manufacturing the light emitting diode is also increased because the quality of GaP layer surface is improved.

摘要翻译： 发光二极管包括第一导电型半导体衬底，碱性AlGaInP双异质结构和第二导电类型半导体的两个窗口层。 第一导电型AlGaInP层和未掺杂的AlGaInP层和第二导电型AlGaInP层形成双异质结构。 AlGaInP层在衬底上顺序生长。 窗层包含一层GaAs和另一层GaP。 通过在AlGaInP异质结构上外延生长GaAs来形成第一窗口层。 第二窗口层通过使用OMVPE或气相外延（VPE）技术直接在第一窗口层上生长GaP而形成。 包含GaAs窗口层增加了电流扩展，从而增加了器件的效率。 由于GaP层表面的质量提高，所以制造发光二极管的产率也增加。

公开(公告)号：US20070241345A1

公开(公告)日：2007-10-18

申请号：US11785024

申请日：2007-04-13

申请人： Kuo-Hsin Huang

发明人： Kuo-Hsin Huang

IPC分类号： H01L33/00 ,  H01L23/48 ,  H01L31/12 ,  H01L21/00

CPC分类号： H01L33/38 ,  H01L2224/4847 ,  H01L2933/0016

摘要： The present invention provides a semiconductor light emitting device which includes a multi-layer structure. Additionally, an electrode is disposed on a first surface of the multi-layer structure. Furthermore, the electrode includes a plurality of bonding pads.

摘要翻译： 本发明提供一种包括多层结构的半导体发光器件。 另外，电极设置在多层结构的第一表面上。 此外，电极包括多个接合焊盘。

公开(公告)号：US20100041172A1

公开(公告)日：2010-02-18

申请号：US12603286

申请日：2009-10-21

申请人： Kuo-Hsin Huang

发明人： Kuo-Hsin Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L2933/0083

摘要： The present invention provides a method for fabricating a flip chip semiconductor light-emitting device which includes a substrate and a semiconductor multi-layer structure. The method of the invention includes the steps of: (a) forming a semiconductor multi-layer structure on a first substrate; (b) flip-chip bonding the semiconductor multi-layer structure on a second substrate; (c) removing the first substrate, so as to expose a first surface of the semiconductor multi-layer structure; and (d) forming a plurality of protrusions, arranged periodically, on the first surface. Particularly, the protrusions comprise a first protrusion and a second protrusion adjacent to the first protrusion, the first protrusion and the second protrusion both having a peak, and the second surface having a bottom, wherein the ratio of the vertical distance between one of the peaks and the bottom and the horizontal distance between the two peaks is in between 0.01 and 10.

摘要翻译： 本发明提供一种制造包括衬底和半导体多层结构的倒装芯片半导体发光器件的方法。 本发明的方法包括以下步骤：（a）在第一衬底上形成半导体多层结构; （b）在第二衬底上将半导体多层结构倒装芯片结合; （c）去除所述第一衬底，以暴露所述半导体多层结构的第一表面; 和（d）在第一表面上形成周期性布置的多个突起。 特别地，突起包括第一突起和与第一突起相邻的第二突起，第一突起和第二突起均具有峰，并且第二表面具有底部，其中峰之间的垂直距离之比 两个峰之间的底部和水平距离在0.01和10之间。

公开(公告)号：US07619259B2

公开(公告)日：2009-11-17

申请号：US11636522

申请日：2006-12-11

申请人： Kuo-Hsin Huang

发明人： Kuo-Hsin Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/641

摘要： The present invention is to provide a semiconductor device which includes a mounting base and a light-emitting device. The mounting base includes a substrate of a first semiconductor material and a first layer of a material with high thermal conductivity formed over the substrate. Furthermore, the light-emitting device is a multi-layer structure which includes at least a second layer of a second semiconductor material. The light-emitting device is mounted on the first layer of the mounting base. Moreover, the difference of the thermal expansion coefficient between the first semiconductor material and the second semiconductor material is between a predetermined range.

摘要翻译： 本发明提供一种包括安装基座和发光器件的半导体器件。 安装基座包括在衬底上形成的第一半导体材料的衬底和具有高导热性的材料的第一层。 此外，发光装置是包括至少第二层第二半导体材料的多层结构。 发光装置安装在安装基座的第一层上。 此外，第一半导体材料和第二半导体材料之间的热膨胀系数的差在预定范围之间。

公开(公告)号：US5344791A

公开(公告)日：1994-09-06

申请号：US928841

申请日：1992-08-14

申请人： Kuo-Hsin Huang

发明人： Kuo-Hsin Huang

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L33/30 ,  H01L21/20

CPC分类号： H01L33/305 ,  H01L33/0025 ,  H01L33/14 ,  H01L33/02

摘要： A light emitting diode is epitaxially grown on a semiconductor substrate. A lower cladding layer is grown on the substrate and doped to have n-type conductivity. An active layer is deposited on the lower cladding layer, and a p-type upper cladding layer is deposited on the active layer. A relatively thin lower window layer is then deposited on the upper cladding layer, and doped with a first p-type dopant material. A relatively thick upper window layer is then deposited on the lower window layer, and doped with a different p-type dopant material. The layer with a dopant different from the principal portion of the window serves to limit diffusion of dopant through the active layer. The dopant in the diffusion limiting layer can diffuse in both directions, thereby reducing the driving force of diffusion. As a result, the p-type dopant intersects a steep portion of the concentration gradient of n-type dopant quite near the interface between the lower cladding layer and active layer, resulting in high light output power. A diffusion limiting layer having a different dopant than a substrate may be used for forming a LED with a p-type substrate and an n-type layer near the upper face.

摘要翻译： 在半导体衬底上外延生长发光二极管。 下包层在衬底上生长并掺杂以具有n型导电性。 有源层沉积在下包层上，p型上包层沉积在有源层上。 然后将相对较薄的下窗层沉积在上包层上，并掺杂有第一p型掺杂剂材料。 然后在下窗口层上沉积相对较厚的上窗层，并掺杂不同的p型掺杂剂材料。 具有不同于窗口主要部分的掺杂剂的层用于限制掺杂剂通过有源层的扩散。 扩散限制层中的掺杂剂可以在两个方向上扩散，从而减小扩散的驱动力。 结果，p型掺杂剂在n型掺杂剂的浓度梯度的陡峭部分与下包层和有源层之间的界面附近相交，导致高的光输出功率。 可以使用具有与衬底不同的掺杂剂的扩散限制层来形成具有p型衬底和靠近上表面的n型层的LED。

公开(公告)号：US5233204A

公开(公告)日：1993-08-03

申请号：US819542

申请日：1992-01-10

申请人： Robert M. Fletcher ,  Kuo-Hsin Huang ,  Chihping Kuo ,  Jiann Yu ,  Timothy D. Osentowski

发明人： Robert M. Fletcher ,  Kuo-Hsin Huang ,  Chihping Kuo ,  Jiann Yu ,  Timothy D. Osentowski

IPC分类号： H01L33/00 ,  H01L33/02

CPC分类号： H01L33/02 ,  H01L33/0062

摘要： A light emitting diode (LED) including a light generation region situated on a light-absorbing substrate also includes a thick transparent layer which ensures that an increased amount of light is emitted from the sides of the LED and only a minimum amount of light is absorbed by the substrate. The thickness of the transparent layer is determined as a function of its width and the critical angle at which light is internally reflected within the transparent layer. The thick transparent layer is located either above, below or both above and below the light generation region. The thick transparent layer may be made of materials and with fabrication processes different from the light generation region.