-
公开(公告)号：US20070133649A1
公开(公告)日：2007-06-14
申请号：US11634277
申请日：2006-12-05
Applicant: Oh Kwon , Kang Kim , Jonghoi Kim , Eundeok Sim , Kwang Oh
Inventor： Oh Kwon , Kang Kim , Jonghoi Kim , Eundeok Sim , Kwang Oh
IPC: H01S3/08
CPC classification number: H01S5/141 , G02B6/29326 , G02B6/29328 , G02B6/29395 , H01S3/1075 , H01S5/02248 , H01S5/026 , H01S5/06255
Abstract: Provided is a wavelength tunable light source including a semiconductor optical amplifier, a beam steering unit or a beam deflector, and a concave diffraction grating integrated therein. The wavelength tunable light source can be easily implemented since locations to which a beam is diffracted by the concave diffraction grating and at which portions of the beam with different wavelengths have constructive interference form a straight line, not a Rowland circle. Furthermore, wavelength tuning and optical coupling characteristics of the wavelength tunable light source are excellent. Since both single integration and hybrid integration are possible for the wavelength tunable light source, the wavelength tunable light source exhibits superior operating characteristics and high reliability.
Abstract translation: 提供了包括半导体光放大器，光束转向单元或光束偏转器的波长可调光源以及集成在其中的凹衍射光栅。 波长可调谐光源可以容易地实现，因为光束被凹衍射光栅衍射的位置和具有不同波长的光束的部分具有相长的干涉形成直线而不是罗兰圆。 此外，波长可调光源的波长调谐和光耦合特性优异。 由于单一集成和混合集成对于波长可调谐光源是可能的，所以波长可调光源表现出优异的操作特性和高可靠性。
-
2.发明申请Method of fabricating ridge type waveguide integrated semiconductor optical device 审中-公开脊型波导集成半导体光器件的制造方法公开(公告)号：US20060104583A1
公开(公告)日：2006-05-18
申请号：US11122998
申请日：2005-05-06
IPC: G02B6/10
CPC classification number: G02B6/136 , G02B6/122 , G02B2006/12097
Abstract: Provided is a method of fabricating a ridge type waveguide integrated semiconductor optical device. The method includes: separating a substrate into an active waveguide region and a passive waveguide region and selectively epitaxial-growing an active layer and a passive layer in the active waveguide region and the passive waveguide region, respectively, such that the active layer and the passive layer are vertically aligned with each other; sequentially forming a capping layer and an electrode connection layer on the active layer and the passive layer; forming a first insulating layer pattern on a predetermined region of the electrode connection layer disposed in the active waveguide region and simultaneously, forming a second insulating layer pattern on a predetermined region of the electrode connection layer disposed in the passive waveguide region; forming a shallow ridge type active waveguide and a shallow ridge type passive waveguide by performing an etching process using the first and second insulating layer patterns as etch masks until the capping layer is etched to a predetermined depth; and forming a passivation pattern on the entire surface of the shallow ridge type active waveguide and forming a deep ridge type passive waveguide by performing an etching process using the second insulating layer pattern as an etch mask until the substrate is etched to a predetermined depth.
Abstract translation: 提供了一种制造脊型波导集成半导体光学器件的方法。 该方法包括：将衬底分离成有源波导区域和无源波导区域，并分别在有源波导区域和无源波导区域中选择性地外延生长有源层和无源层，使得有源层和被动 层彼此垂直对准; 在有源层和被动层上依次形成覆盖层和电极连接层; 在设置在有源波导区域中的电极连接层的预定区域上形成第一绝缘层图案，并同时在布置在无源波导区域中的电极连接层的预定区域上形成第二绝缘层图案; 通过使用第一和第二绝缘层图案作为蚀刻掩模进行蚀刻处理，直到将覆盖层蚀刻到预定深度来形成浅脊型有源波导和浅脊型无源波导; 并且在浅脊型有源波导的整个表面上形成钝化图案，并通过使用第二绝缘层图案作为蚀刻掩模进行蚀刻处理形成深脊型无源波导，直到基板被蚀刻到预定深度。
-
公开(公告)号：US20050219433A1
公开(公告)日：2005-10-06
申请号：US11091477
申请日：2005-03-29
IPC: G02F1/136 , G02F1/133 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC classification number: G02F1/13458 , G02F1/136227 , H01L27/124 , H01L27/1288
Abstract: An LCD device and a method for manufacturing the same is disclosed in which the manufacturing process is simplified by etching an overcoat layer and a lower insulating layer at the same time. Disclosed is a method for manufacturing the LCD device that includes forming a thin film transistor (TFT) on an active region of a substrate, forming a gate pad region and data pad region, and forming a passivation layer on the entire surface of the substrate. The manufacturing method further includes forming an overcoat layer and selectively etching the overcoat layer. Contact holes for the pixel electrode, the gate pad, and the data pad are formed by selectively etching the overcoat layer, the passivation layer, and the gate insulating layer though one process.
Abstract translation: 公开了一种LCD装置及其制造方法，其中通过同时蚀刻外涂层和下绝缘层来简化制造工艺。 公开了一种用于制造LCD器件的方法，其包括在衬底的有源区上形成薄膜晶体管（TFT），形成栅极焊盘区域和数据焊盘区域，并在衬底的整个表面上形成钝化层。 制造方法还包括形成外涂层并选择性地蚀刻外涂层。 通过一个工艺，通过选择性地蚀刻外涂层，钝化层和栅极绝缘层来形成像素电极，栅极焊盘和数据焊盘的接触孔。
-
公开(公告)号：US08979038B1
公开(公告)日：2015-03-17
申请号：US13692953
申请日：2012-12-03
Applicant: Kwang Oh
Inventor： Kwang Oh
CPC classification number: F16L3/24 , F16L3/00 , F16L3/04 , F16L3/10 , F16L3/12 , F16L3/14 , F16L3/22
Abstract: A method for applying a clamp for a construction strut that allows a pipe to be clamped to the construction strut in which the clamp has a fastener that is not exposed above the clamp curvature and in which the fastener head is easily accessible. Also the clamp has a retaining tab and a neck portion such that it can be installed by straight-in insertion at the top of a construction strut. Also, the method has an embodiment in that the clamp can be installed either on the open side of the construction strut or on the closed side using slots in the closed side by straight-in passing the retaining tab past the inturned flanges on the top of the construction strut and by a rotation at the bottom of the construction strut.
Abstract translation: 一种用于施加用于构造支柱的夹具的方法，其允许管被夹紧到构造支柱上，其中夹具具有不暴露在夹具曲率之上的紧固件，并且紧固件头部容易接近。 此外，夹具具有保持片和颈部，使得其可以通过直接插入在构造支柱的顶部而被安装。 此外，该方法具有一个实施例，其中夹具可以安装在施工支柱的开放侧或封闭侧，使用在封闭侧的槽，通过直线穿过保持片穿过位于 施工支柱和施工支柱底部的旋转。
-
公开(公告)号：US20100096510A1
公开(公告)日：2010-04-22
申请号：US12256407
申请日：2008-10-22
Applicant: Kwang Oh
Inventor： Kwang Oh
CPC classification number: F16L3/24 , F16L3/00 , F16L3/04 , F16L3/10 , F16L3/12 , F16L3/14 , F16L3/22
Abstract: A clamp for a construction strut that allows a pipe to be clamped to the construction strut in which the clamp has a fastener that is not exposed above the clamp curvature and in which the fastener head is easily accessible. Also the clamp has a retaining tab and a neck portion such that it can be installed either on the open side of the construction strut or on the closed side using slots in the closed side by straight-in passing the retaining tab past the inturned flanges on the top of the construction strut.
Abstract translation: 用于构造支柱的夹具，其允许管道夹紧到构造支柱上，其中夹具具有不暴露在夹具曲率之上并且紧固件头部容易接近的紧固件。 此外，夹具具有保持突片和颈部部分，使得其可以安装在施工支柱的开放侧或封闭侧，使用在封闭侧的狭槽，通过将保持突片直接穿过所述折回的凸缘上 顶部的施工支柱。
-
Patent Agency Ranking
公开(公告)号：US20060126693A1
公开(公告)日：2006-06-15
申请号：US11176743
申请日：2005-07-07
Applicant: Oh Kee Kwon , Kwang Oh , Kang Kim , Jong Kim , Hyun Kim
Inventor： Oh Kee Kwon , Kwang Oh , Kang Kim , Jong Kim , Hyun Kim
IPC: H01S5/00
CPC classification number: H01S5/06255 , H01S5/026 , H01S5/065 , H01S5/0654 , H01S5/0656 , H01S5/1021 , H01S5/1025 , H01S5/1039
Abstract: Provided is an integrated semiconductor light source using locking characteristic by an external light injection, including: an active region controlling an optical gain and an optical output by current injection; and a passive region having a structure integrated with the active region and moving a cavity mode by current injection or voltage application to lock injection light.
-
公开(公告)号：US20060082894A1
公开(公告)日：2006-04-20
申请号：US11237043
申请日：2005-09-28
IPC: G02B3/00
CPC classification number: G02B27/095 , G02B19/0009 , G02B19/0052 , G02B26/0875 , G02B27/0977 , G02B2006/12078 , G02B2006/12104 , G02B2006/12145 , G02F1/295
Abstract: Provided is an optical deflector for deflecting radiation beams. The optical deflector includes: a peripheral region having a first effective refractive index; and a deflection pattern region having a predetermined shape and a second effective refractive index, wherein the second effective refractive index differs from the first effective refractive index. Here, due to the deflection pattern region having the predetermined shape, the radiation beams are deflected in a direction starting from a certain point. By using the optical deflector, the locus of a light source can be designed in one of various forms, such as a straight line, a circle, an ellipse, or a parabola.
Abstract translation: 提供了用于偏转辐射束的光学偏转器。 光学偏转器包括：具有第一有效折射率的周边区域; 以及具有预定形状和第二有效折射率的偏转图案区域，其中所述第二有效折射率与所述第一有效折射率不同。 这里，由于具有预定形状的偏转图案区域，辐射束在从某一点开始的方向上偏转。 通过使用光学偏转器，光源的轨迹可以被设计成各种形式之一，例如直线，圆形，椭圆形或抛物线。
-
公开(公告)号：US20070181927A1
公开(公告)日：2007-08-09
申请号：US11408812
申请日：2006-04-21
Applicant: Joseph Yedinak , Kwang Oh , Chongman Yun , Jae Lee
Inventor： Joseph Yedinak , Kwang Oh , Chongman Yun , Jae Lee
IPC: H01L29/94
CPC classification number: H01L29/7395 , H01L29/0634 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/7397
Abstract: An IGBT includes a first silicon region over a collector region, and a plurality of pillars of first and second conductivity types arranged in an alternating manner over the first silicon region. The IGBT further includes a plurality of well regions each extending over and being in electrical contact with one of the pillars of the first conductivity type, and a plurality of gate electrodes each extending over a portion of a corresponding well region. The physical dimensions of each of the first and second conductivity type pillars and the doping concentration of charge carriers in each of the first and second conductivity type pillars are selected so as to create a charge imbalance between a net charge in each pillar of first conductivity and a net charge in its adjacent pillar of the second conductivity type.
Abstract translation: IGBT包括在集电极区域上的第一硅区域和在第一硅区域上以交替方式布置的多个第一和第二导电类型的柱。 IGBT进一步包括多个阱区，每个阱区延伸并且与第一导电类型的一个柱中的一个电接触，并且多个栅电极各自延伸在对应的阱区的一部分上。 选择第一和第二导电型柱中的每一个的物理尺寸和第一和第二导电类型柱中的每一个中的载流子的掺杂浓度，以便在第一导电性的每个支柱中的净电荷和 其第二导电类型的相邻支柱中的净电荷。
-
公开(公告)号：US20070096111A1
公开(公告)日：2007-05-03
申请号：US11455517
申请日：2006-06-19
Applicant: Kwang Oh
Inventor： Kwang Oh
CPC classification number: H01L27/3251 , H01L27/12 , H01L27/1214 , H01L29/78606 , H01L29/78696
Abstract: The present disclosure provides a light emitting display device including a first substrate and a second substrate and a light emitting part disposed therebetween. The first substrate includes an active layer, source and drain electrodes, an insulating layer, and a gate electrode. The active layer is doped with first dopant ions and second dopant ions. The light emitting display may have a fast response characteristic due to a reduced resistance of the active layer and an improved characteristic of current drift.
Abstract translation: 本公开提供一种发光显示装置，包括第一基板和第二基板以及设置在其间的发光部。 第一衬底包括有源层，源极和漏极，绝缘层和栅电极。 有源层掺杂有第一掺杂离子和第二掺杂离子。 发光显示器可能由于有源层的电阻降低和电流漂移的改善特性而具有快速响应特性。
-
公开(公告)号：US20060127093A1
公开(公告)日：2006-06-15
申请号：US11252401
申请日：2005-10-17
Applicant: Sahng Park , Su Oh , Kwang Choi , Moon Park , Yong Baek , Kwang Oh
Inventor： Sahng Park , Su Oh , Kwang Choi , Moon Park , Yong Baek , Kwang Oh
IPC: H04J14/00
CPC classification number: H04J14/0282 , H04J14/0226 , H04J14/0246 , H04J14/0247 , H04J14/025 , H04J14/0252 , H04J2014/0253
Abstract: A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.
-
-
-
-
-
-
-
-
-
Search Results
23
records
(took 0.014 seconds)
