摘要:
There is provided a semiconductor package module, and more particularly, a semiconductor package module constituted by modularizing power semiconductor devices incapable of being able to be easily integrated due to heat generated therefrom. To this end, the semiconductor package module includes a plurality of semiconductor packages; and a plurality of semiconductor packages; and a heat dissipation member having a pipe shape including a flow channel formed therein and including at least one or more through holes into which the semiconductor packages are inserted.
摘要:
Disclosed herein is a double side cooling power semiconductor module including: a first cooler having a concave part formed in one surface thereof in a thickness direction; a first semiconductor chip mounted on the concave part of the first cooler; a second cooler having one surface and the other surface and formed on one surface of the first cooler so that one surface thereof contacts the first semiconductor chip; a circuit board formed on the other surface of the second cooler; a second semiconductor chip mounted on the circuit board; and a flexible substrate having a circuit layer electrically connecting the first and second semiconductor chips to each other.
摘要:
Disclosed herein is a double side cooling power semiconductor module including: a first cooler having a concave part formed in one surface thereof in a thickness direction; a first semiconductor chip mounted on the concave part of the first cooler; a second cooler having one surface and the other surface and formed on one surface of the first cooler so that one surface thereof contacts the first semiconductor chip; a circuit board formed on the other surface of the second cooler; a second semiconductor chip mounted on the circuit board; and a flexible substrate having a circuit layer electrically connecting the first and second semiconductor chips to each other.
摘要:
Disclosed herein is a substrate for a power module. The substrate may include a metal base substrate, an insulating layer formed on the metal base substrate and including a plurality of insulating adhesion layers and a ceramic filler layer formed on a joining interface between the plurality of insulating adhesion layers, and a circuit layer formed on the insulating layer.
摘要:
Disclosed herein is a heat dissipation system for a power module, including: first cooling medium flow parts and second cooling medium flow parts allowing cooling media to flow in first and second directions, respectively.
摘要:
Disclosed herein is a heat dissipation system for a power module, including: first cooling medium flow parts and second cooling medium flow parts allowing cooling media to flow in first and second directions, respectively.
摘要:
Disclosed herein is a semiconductor package. The semiconductor package includes a semiconductor module, a first heat dissipation unit, a second heat dissipation unit and a housing. The semiconductor module contains a semiconductor device. The first heat dissipation unit is provided under the semiconductor module. The first heat dissipation unit includes at least one first pipe through which first cooling water passes. A first rotator is rotatably disposed in the first pipe. The second heat dissipation unit is provided on the semiconductor module. The second heat dissipation unit includes at least one second pipe through which second cooling water passes. A second rotator is rotatably disposed in the second pipe. The housing is provided on opposite sides of the semiconductor module, the first heat dissipation unit and the second heat dissipation unit and supports the semiconductor module, the first heat dissipation unit and the second heat dissipation unit.
摘要:
Disclosed herein are a substrate for a power module package and a method for manufacturing the same, including: a base substrate made of a metal material; an anodized layer formed on the base substrate; and a circuit layer formed on the anodized layer, wherein the anodized layer is formed to correspond to circuit patterns on the circuit layer or is formed to be divided into a plurality of areas.
摘要:
Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate having grooves formed between a plurality of semiconductor device mounting areas; semiconductor devices mounted on the semiconductor device mounting areas of the base substrate; and a molding formed on the base substrate and in inner portions of the grooves.
摘要:
Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and second lead frames; and semiconductor devices mounted on second surfaces of the first and second lead frames.