Semiconductor apparatus, signal transmission system and signal transmission method
    7.
    发明授权
    Semiconductor apparatus, signal transmission system and signal transmission method 有权
    半导体装置,信号传输系统和信号传输方法

    公开(公告)号:US08866282B2

    公开(公告)日:2014-10-21

    申请号:US13586104

    申请日:2012-08-15

    摘要: A slew rate of a signal transmitted between a semiconductor device having a small load capacitance and a semiconductor device having a large load capacitance is improved. When a signal is transmitted to the semiconductor device (for example, a memory device) having the large load capacitance, pre-emphasis is performed, and when a signal is transmitted to the semiconductor device (for example, a memory controller) having the small load capacitance, pre-emphasis is not performed or is slightly performed. By this, when the signal is transmitted to the memory device, blunting in signal rising due to the load capacitance is suppressed, and when the signal is transmitted to the memory controller, ringing due to the reflection of the signal is suppressed, and the slew rate of the data transmission is improved.

    摘要翻译: 在具有小负载电容的半导体器件和具有大负载电容的半导体器件之间传输的信号的转换速率得到改善。 当信号被发送到具有大的负载电容的半导体器件(例如,存储器件)时,执行预加重,并且当信号被发送到具有小的负载电容的半导体器件(例如,存储器控制器) 负载电容,预加重不执行或略微执行。 由此,当信号被发送到存储装置时,由于负载电容而导致的信号上升的钝化被抑制,并且当信号被发送到存储器控制器时,由于信号的反射而被抑制的振铃 数据传输速率提高。

    SEMICONDUCTOR APPARATUS, SIGNAL TRANSMISSION SYSTEM AND SIGNAL TRANSMISSION METHOD
    8.
    发明申请
    SEMICONDUCTOR APPARATUS, SIGNAL TRANSMISSION SYSTEM AND SIGNAL TRANSMISSION METHOD 有权
    半导体装置,信号传输系统和信号传输方法

    公开(公告)号:US20130207234A1

    公开(公告)日:2013-08-15

    申请号:US13586104

    申请日:2012-08-15

    IPC分类号: H01L49/02

    摘要: A slew rate of a signal transmitted between a semiconductor device having a small load capacitance and a semiconductor device having a large load capacitance is improved. When a signal is transmitted to the semiconductor device (for example, a memory device) having the large load capacitance, pre-emphasis is performed, and when a signal is transmitted to the semiconductor device (for example, a memory controller) having the small load capacitance, pre-emphasis is not performed or is slightly performed. By this, when the signal is transmitted to the memory device, blunting in signal rising due to the load capacitance is suppressed, and when the signal is transmitted to the memory controller, ringing due to the reflection of the signal is suppressed, and the slew rate of the data transmission is improved.

    摘要翻译: 在具有小负载电容的半导体器件和具有大负载电容的半导体器件之间传输的信号的转换速率得到改善。 当信号被发送到具有大的负载电容的半导体器件(例如,存储器件)时,执行预加重,并且当信号被发送到具有小的负载电容的半导体器件(例如,存储器控制器) 负载电容,预加重不执行或略微执行。 由此,当信号被发送到存储装置时,由于负载电容而导致的信号上升的钝化被抑制,并且当信号被发送到存储器控制器时,由于信号的反射而被抑制的振铃 数据传输速率提高。

    Seal device
    10.
    发明授权
    Seal device 有权
    密封装置

    公开(公告)号:US08052153B2

    公开(公告)日:2011-11-08

    申请号:US12096600

    申请日:2006-12-20

    IPC分类号: F16J15/32

    CPC分类号: F16J15/3232

    摘要: [PROBLEMS] A seal device where a seal lip reliably maintains shaft sealing relative to high-pressure fluid that is to be sealed and where the equivalent Mises stress occurring in the seal lip is reduced to extend the durable term of the seal lip longer.[MEANS FOR SOLVING PROBLEMS] A backup ring (2) has a tapered section (23) continuously extending from a fixation section (21) of the backup ring (2) and also has a forward end section (24). A rounded surface (E) with a curvature radius (R-1) is formed at least at a boundary (26) where a surface (D) of the tapered section (23) changes to a surface (F) of the forward end section (24). A portion of the surface (D) of the tapered surface (23), which portion is in contact with the rounded surface (E) at the boundary (26), is a projected curvature surface having a curvature radius greater than the curvature radius (R-1) of the boundary (26).

    摘要翻译: 一种密封装置,其中密封唇相对于待密封的高压流体可靠地保持轴密封,并且其中在密封唇中发生的等效米塞斯应力减小,以延长密封唇的耐用期。 解决问题的手段备用环(2)具有从支撑环(2)的固定部(21)连续延伸的锥形部(23),并且还具有前端部(24)。 至少在锥形部分(23)的表面(D)变化到前端部分的表面(F)的边界(26)处形成具有曲率半径(R-1)的圆形表面(E) (24)。 锥形表面(23)的表面(D)的一部分在边界(26)处与圆形表面(E)接触的是曲率半径大于曲率半径的投影曲率表面(D) R-1)。