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    Image sensor module and method thereof
    1.
    发明申请
    Image sensor module and method thereof 有权
    图像传感器模块及其方法

    公开(公告)号：US20060252246A1

    公开(公告)日：2006-11-09

    申请号：US11395157

    申请日：2006-04-03

    申请人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

    发明人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

    IPC分类号： H01L21/44

    CPC分类号： H01L31/02162 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer. According to the present invention, it is possible to realize a cheap wafer level chip size package (WL-CSP) using the existing wafer processing and the metal deposition processing equipments. Further, an image sensor module with smaller thickness and area than the existing CSP package can be realized. Moreover, an image sensor module with a smaller area than the existing COG package can be realized.

    摘要翻译： 图像传感器模块及其制造方法技术领域本发明涉及一种图像传感器模块及其制造方法，特别涉及通过将图像传感器芯片晶片直接接触到其上沉积有IR滤光器涂层的玻璃晶片实现的晶片级芯片尺寸封装（WL-CSP） ，电极重排和切割处理，使用该晶片级芯片尺寸封装（WL-CSP）的小型化图像传感器模块及其方法。 使用根据本发明的晶片级芯片尺寸封装技术的CMOS图像传感器模块包括：图像传感器芯片晶片，具有形成在除了图像感测区域之外的部分处的格子结构的分隔; 和具有IR滤光器涂层和金属电极的玻璃晶片; 并且其中所述图像传感器芯片晶片和所述玻璃晶片通过倒装芯片接合形成电接触和芯片密封; 并且其中在金属布线重新布置在玻璃晶片的下表面上之后形成焊料凸块和非焊料凸点。 根据本发明，可以使用现有的晶片处理和金属沉积处理设备来实现廉价的晶片级芯片尺寸封装（WL-CSP）。 此外，可以实现具有比现有CSP封装更小的厚度和面积的图像传感器模块。 此外，可以实现具有比现有COG封装小的面积的图像传感器模块。

    CMOS image sensor module with wafers
    2.
    发明授权
    CMOS image sensor module with wafers 有权
    具有晶圆的CMOS图像传感器模块

    公开(公告)号：US07446384B2

    公开(公告)日：2008-11-04

    申请号：US11395157

    申请日：2006-04-03

    申请人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

    发明人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

    IPC分类号： H01L27/14 ,  H01L31/00

    CPC分类号： H01L31/02162 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer. According to the present invention, it is possible to realize a cheap wafer level chip size package (WL-CSP) using the existing wafer processing and the metal deposition processing equipments. Further, an image sensor module with smaller thickness and area than the existing CSP package can be realized. Moreover, an image sensor module with a smaller area than the existing COG package can be realized.

    摘要翻译： 图像传感器模块及其制造方法技术领域本发明涉及一种图像传感器模块及其制造方法，特别涉及通过将图像传感器芯片晶片直接接触到其上沉积有IR滤光器涂层的玻璃晶片实现的晶片级芯片尺寸封装（WL-CSP） ，电极重排和切割处理，使用该晶片级芯片尺寸封装（WL-CSP）的小型化图像传感器模块及其方法。 使用根据本发明的晶片级芯片尺寸封装技术的CMOS图像传感器模块包括：图像传感器芯片晶片，具有形成在除了图像感测区域之外的部分处的格子结构的分隔; 和具有IR滤光器涂层和金属电极的玻璃晶片; 并且其中所述图像传感器芯片晶片和所述玻璃晶片通过倒装芯片接合形成电接触和芯片密封; 并且其中在金属布线重新布置在玻璃晶片的下表面上之后形成焊料凸块和非焊料凸块。 根据本发明，可以使用现有的晶片处理和金属沉积处理设备来实现廉价的晶片级芯片尺寸封装（WL-CSP）。 此外，可以实现具有比现有CSP封装更小的厚度和面积的图像传感器模块。 此外，可以实现具有比现有COG封装小的面积的图像传感器模块。

    Wafer level chip size package for CMOS image sensor module and manufacturing method thereof
    3.
    发明申请
    Wafer level chip size package for CMOS image sensor module and manufacturing method thereof 审中-公开
    CMOS图像传感器模块的晶片级芯片尺寸封装及其制造方法

    公开(公告)号：US20070054419A1

    公开(公告)日：2007-03-08

    申请号：US11513203

    申请日：2006-08-31

    申请人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son

    发明人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14618 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/00014

    摘要： Disclosed is a wafer level chip size package for an image sensor module and a manufacturing method thereof, more particularly to a small size image sensor module characterized by a structure where a glass formed with an I/R cut-off filter (layer) is assembled onto an image sensor chip by a polymer partition wall and a solder bump is formed on an electrode of the rear side of a chip connected by a through-hole formed on each I/O electrode of an image sensor chip and a wafer level chip size package process for realizing the module. The method for manufacturing a wafer level chip size package for an image sensor module, the method comprises: bonding an image sensor wafer glass and a glass wafer to form a through-hole on the image sensor wafer; filling the through-hole formed on the image sensor wafer with an exciting material; and forming a solder bump at the end of the exciting material to be connected with the circuit formed PCB substrate. According to the present invention, the existing equipments for wafer processing and metal deposition are used. Therefore, it is possible to realize a cost-effective wafer level chip size package and an image sensor module having the minimum thickness in a thickness direction than the existing wafer level chip size package for image sensor and the same area as an image sensor chip.

    摘要翻译： 公开了一种用于图像传感器模块的晶片级芯片尺寸封装及其制造方法，更具体地涉及一种小型图像传感器模块，其特征在于其中组装有I / R截止滤光器（层）的玻璃被组装 通过聚合物分隔壁将图像传感器芯片放置在图像传感器芯片上，并且在通过形成在图像传感器芯片的每个I / O电极上的通孔连接的芯片的后侧的电极和晶片级芯片尺寸上形成焊料凸块 实现模块的包过程。 一种用于制造用于图像传感器模块的晶片级芯片尺寸封装的方法，所述方法包括：将图像传感器晶片玻璃和玻璃晶片接合以在所述图像传感器晶片上形成通孔; 用激励材料填充形成在图像传感器晶片上的通孔; 并在激励材料的端部形成焊料凸点以与所形成的PCB基板连接。 根据本发明，使用现有的晶片处理和金属沉积设备。 因此，可以实现具有成本效益的晶片级芯片尺寸封装和图像传感器模块，其厚度方向比图像传感器的现有晶片级芯片尺寸封装和与图像传感器芯片相同的区域具有最小厚度。