公开(公告)号：US5939131A

公开(公告)日：1999-08-17

申请号：US874614

申请日：1997-06-13

申请人： Kyung-hoon Kim ,  Kab-jin Nam ,  In-sung Park ,  Young-wook Park

发明人： Kyung-hoon Kim ,  Kab-jin Nam ,  In-sung Park ,  Young-wook Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  B05P5/12

CPC分类号： H01L28/40 ,  H01L21/31604

摘要： A method for forming a microelectronic capacitor includes the steps of forming a first conductive layer on a substrate and forming an oxide reducing layer on the first conductive layer opposite the substrate wherein the oxide reducing layer reduces oxidation of the first conductive layer. An oxide layer is formed on the oxide reducing layer opposite the substrate, and a dielectric layer is formed on the oxide layer opposite the substrate wherein the dielectric layer has a dielectric constant that is higher than a dielectric constant of the oxide reducing layer, and higher than a dielectric constant of the oxide layer. In addition, a second conductive layer is formed on the dielectric layer opposite the substrate. Related structures are also discussed.

摘要翻译： 一种形成微电子电容器的方法包括以下步骤：在衬底上形成第一导电层，并在与衬底相对的第一导电层上形成氧化物还原层，其中氧化物还原层减少第一导电层的氧化。 在与衬底相对的氧化物还原层上形成氧化物层，并且在与衬底相对的氧化物层上形成介电层，其中介电层的介电常数高于氧化物还原层的介电常数，并且更高 比氧化物层的介电常数大。 此外，在与衬底相对的电介质层上形成第二导电层。 还讨论了相关结构。

公开(公告)号：US5763300A

公开(公告)日：1998-06-09

申请号：US709249

申请日：1996-09-10

申请人： In-sung Park ,  Kyung-hoon Kim

发明人： In-sung Park ,  Kyung-hoon Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8242

CPC分类号： H01L28/40

摘要： A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.

摘要翻译： 通过在微电子衬底上硝化导电电极的表面形成微电子电容器。 然后将导电电极的硝化表面氧化。 硝化和氧化步骤在导电电极上共同形成氮氧化硅膜。 然后在导电电极的氧化和硝化表面上形成五氧化二钽膜。 然后可以在氧气存在下对五氧化钽膜进行热处理。 从而提供高性能微电子电容器。

公开(公告)号：US5721153A

公开(公告)日：1998-02-24

申请号：US604300

申请日：1996-02-21

申请人： Kyung-hoon Kim ,  Young-wook Park ,  Cha-young Yoo

发明人： Kyung-hoon Kim ,  Young-wook Park ,  Cha-young Yoo

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  Y10S438/964

摘要： A capacitor of a highly integrated semiconductor device and a manufacturing method thereof is provided. In the highly integrated semiconductor device, an HSG polysilicon layer pattern is formed having a multitude of hemispherical grains (HSG) on the top and side surfaces of the storage electrode. Thus, the etching of and damage to the HSG polysilicon layer pattern can be prevented, and capacitance can be increased by maximizing the surface area of the storage electrode.

摘要翻译： 提供了高度集成的半导体器件的电容器及其制造方法。 在高度集成的半导体器件中，在存储电极的顶表面和侧表面上形成有多个半球形晶粒（HSG）的HSG多晶硅层图案。 因此，可以防止对HSG多晶硅层图案的蚀刻和损坏，并且可以通过使存储电极的表面积最大化来增加电容。

公开(公告)号：US5859760A

公开(公告)日：1999-01-12

申请号：US843799

申请日：1997-04-21

申请人： In-sung Park ,  Kyung-hoon Kim

发明人： In-sung Park ,  Kyung-hoon Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01G4/06

CPC分类号： H01L28/40

摘要： A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.

摘要翻译： 通过在微电子衬底上硝化导电电极的表面形成微电子电容器。 然后将导电电极的硝化表面氧化。 硝化和氧化步骤在导电电极上共同形成氮氧化硅膜。 然后在导电电极的氧化和硝化表面上形成五氧化二钽膜。 然后可以在氧气存在下对五氧化钽膜进行热处理。 从而提供高性能微电子电容器。

公开(公告)号：US20060110148A1

公开(公告)日：2006-05-25

申请号：US11215295

申请日：2005-08-31

申请人： Kyung-hoon Kim ,  Du-il Kim

发明人： Kyung-hoon Kim ,  Du-il Kim

IPC分类号： G03B17/00

CPC分类号： H04N1/3875

摘要： An apparatus and method for trimming a picture in a digital camera are provided. A trimming apparatus in a digital camera having an external window includes a black bar determiner which determines a size of a black bar used to cover a part of the external window based on ratio information of a printing paper received from a printer; a picture changing unit which changes the size or position of a picture, or both the size and position of the picture, based on a user input signal to create a display picture on the external window; and a coordinate determiner which determines coordinates of the display picture based on the display picture and the size of the black bar. The trimming apparatus and a trimming method make it possible to fix an external window of a digital camera and move a picture, thereby providing a user with an accurate way to select a trimming picture.

摘要翻译： 提供了一种用于在数码相机中修整图像的装置和方法。 具有外部窗口的数码相机中的修剪装置包括：黑条确定器，其基于从打印机接收的打印纸的比率信息确定用于覆盖外部窗口的一部分的黑条的尺寸; 图像改变单元，其基于用户输入信号改变图像的尺寸或位置，或图像的尺寸和位置，以在外部窗口上创建显示图像; 以及基于显示图像和黑条的大小来确定显示图像的坐标的坐标确定器。 修剪装置和修剪方法使得可以固定数字照相机的外部窗口并移动图片，从而为用户提供选择修剪图片的准确方式。

公开(公告)号：US08570454B2

公开(公告)日：2013-10-29

申请号：US13525088

申请日：2012-06-15

申请人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

发明人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

IPC分类号： G02F1/1343

CPC分类号： G02F1/13454 ,  G02F1/136213

摘要： A display device with a display region and a non-display region surrounding the display region, the display device comprising: a first substrate and a second substrate. The first substrate comprises: a first insulating substrate; a gate and data line formed on the first insulating substrate; a pixel thin film transistor formed on the display region and electrically connected to the gate line; a pixel electrode electrically connected to the pixel thin film transistor; a gate driver formed on the non-display region and connected to the gate line; and a direct current (DC)/DC converter formed on the non-display region and having a capacitance part. The capacitance part includes: a first capacitance part with a first electrode, a first dielectric layer, and a second electrode; and a second capacitance part with the second electrode, a second dielectric layer, and a third electrode.

摘要翻译： 一种具有显示区域和围绕显示区域的非显示区域的显示装置，所述显示装置包括：第一基板和第二基板。 第一基板包括：第一绝缘基板; 形成在第一绝缘基板上的栅极和数据线; 形成在显示区域上并电连接到栅极线的像素薄膜晶体管; 与像素薄膜晶体管电连接的像素电极; 栅极驱动器，形成在非显示区域上并连接到栅极线; 以及形成在非显示区域上并具有电容部分的直流（DC）/ DC转换器。 电容部分包括：具有第一电极的第一电容部分，第一电介质层和第二电极; 以及具有第二电极的第二电容部分，第二电介质层和第三电极。

公开(公告)号：US07759178B2

公开(公告)日：2010-07-20

申请号：US11506740

申请日：2006-08-18

申请人： Il-gon Kim ,  Tae-hyeong Park ,  Kook-chul Moon ,  Chul-ho Kim ,  Kyung-hoon Kim ,  Su-kyoung Kim

发明人： Il-gon Kim ,  Tae-hyeong Park ,  Kook-chul Moon ,  Chul-ho Kim ,  Kyung-hoon Kim ,  Su-kyoung Kim

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757

摘要： A thin film transistor substrate having a semiconductor layer including a low concentration region and a source region/drain region adjacent to the low concentration region at both sides of a channel region made of polysilicon; a gate insulating layer and a conductive layer on the substrate the conductive layer patterned to form a gate electrode.

摘要翻译： 一种薄膜晶体管基板，具有包括低浓度区域和与由多晶硅制成的沟道区域两侧的低浓度区域相邻的源极区域/漏极区域的半导体层; 栅极绝缘层和导电层，导电层被图案化以形成栅电极。

公开(公告)号：US5324679A

公开(公告)日：1994-06-28

申请号：US843451

申请日：1992-02-28

申请人： Sung-tae Kim ,  Kyung-hoon Kim ,  Jae-hong Ko

发明人： Sung-tae Kim ,  Kyung-hoon Kim ,  Jae-hong Ko

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/1085 ,  H01L27/10808 ,  Y10S438/964

摘要： A semiconductor device having a capacitor of large capacitance and the fabrication method thereof are disclosed. The semiconductor device comprises; a first electrode composed of a conductive structure whose entire surface, including sidewalls, are uneven and formed on the semiconductor substrate; a second electrode formed on the first electrode; and a dielectric film formed between the first and second electrodes. Also the method comprises the steps of forming as a first electrode a conductive structure with an uneven surface on a semiconductor structure, forming a dielectric film, and forming a conductive layer as a second electrode on the conductive structure. Accordingly, a capacitor of large capacitance and high reliability can be obtained.

摘要翻译： 公开了一种具有大电容的电容器的半导体器件及其制造方法。 半导体器件包括： 由导电结构构成的第一电极，其整个表面包括侧壁在半导体衬底上不均匀地形成; 形成在第一电极上的第二电极; 以及形成在第一和第二电极之间的电介质膜。 此外，该方法包括以下步骤：在半导体结构上形成具有不平坦表面的导电结构作为第一电极，形成电介质膜，以及在导电结构上形成导电层作为第二电极。 因此，可以获得大电容和高可靠性的电容器。

公开(公告)号：US20070040174A1

公开(公告)日：2007-02-22

申请号：US11506740

申请日：2006-08-18

申请人： Il-gon Kim ,  Tae-hyeong Park ,  Kook-chul Moon ,  Chul-ho Kim ,  Kyung-hoon Kim ,  Su-kyoung Kim

发明人： Il-gon Kim ,  Tae-hyeong Park ,  Kook-chul Moon ,  Chul-ho Kim ,  Kyung-hoon Kim ,  Su-kyoung Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757

摘要： A thin film transistor substrate having a semiconductor layer including a low concentration region and a source region/drain region adjacent to the low concentration region at both sides of a channel region made of polysilicon; a gate insulating layer and a conductive layer on the substrate the conductive layer patterned to form a gate electrode.

摘要翻译： 一种薄膜晶体管基板，具有包括低浓度区域和与由多晶硅制成的沟道区域两侧的低浓度区域相邻的源极区域/漏极区域的半导体层; 栅极绝缘层和导电层，导电层被图案化以形成栅电极。

公开(公告)号：US08223307B2

公开(公告)日：2012-07-17

申请号：US12018576

申请日：2008-01-23

申请人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

发明人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

IPC分类号： G02F1/1345

CPC分类号： G02F1/13454 ,  G02F1/136213

摘要： A liquid crystal display device with a display region and a non-display region surrounding the display region, the liquid crystal display device comprising: a first substrate; a second substrate which faces the first substrate; and a liquid crystal layer which is interposed between the first substrate and the second substrate, the first substrate comprising: a first insulating substrate; gate and data lines which are formed on the first insulating substrate and intersecting each other; a pixel thin film transistor formed on the display region and electrically connected to the gate and data lines; a pixel electrode electrically connected to the pixel thin film transistor; a gate driver formed on the non-display region and connected to the gate line to drive the gate line; and a direct current (DC)/DC converter formed on the non-display region and comprises a converter thin film transistor and a capacitance part; the capacitance part includes: a first capacitance part which comprises a first electrode, a first dielectric layer formed on the first electrode, and a second electrode formed on the first dielectric layer; and a second capacitance part which comprises the second electrode, a second dielectric layer formed on the second electrode, and a third electrode formed on the second dielectric layer.

摘要翻译： 一种具有显示区域和围绕显示区域的非显示区域的液晶显示装置，所述液晶显示装置包括：第一基板; 面向所述第一基板的第二基板; 以及介于所述第一基板和所述第二基板之间的液晶层，所述第一基板包括：第一绝缘基板; 栅极和数据线，其形成在第一绝缘基板上并彼此交叉; 形成在所述显示区域上并电连接到所述栅极和数据线的像素薄膜晶体管; 与像素薄膜晶体管电连接的像素电极; 栅极驱动器，形成在非显示区域上并连接到栅极线以驱动栅极线; 以及形成在所述非显示区域上并包括转换器薄膜晶体管和电容部分的直流（DC）/ DC转换器; 所述电容部包括：第一电容部，其包括第一电极，形成在所述第一电极上的第一电介质层和形成在所述第一电介质层上的第二电极; 以及第二电容部，其包括所述第二电极，形成在所述第二电极上的第二电介质层和形成在所述第二电介质层上的第三电极。