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13 条记录 (耗时 0.017 秒)

    INTEGRATED CIRCUIT DEVICE INCLUDING THROUGH-SILICON VIA STRUCTURE HAVING OFFSET INTERFACE
    1.
    发明申请
    INTEGRATED CIRCUIT DEVICE INCLUDING THROUGH-SILICON VIA STRUCTURE HAVING OFFSET INTERFACE 有权
    集成电路设备，通过具有偏移接口的结构，包括硅

    公开(公告)号：US20130119547A1

    公开(公告)日：2013-05-16

    申请号：US13603978

    申请日：2012-09-05

    申请人： Su-kyoung Kim ,  Gil-heyun Choi ,  Byung-Iyul Park ,  Kwang-jin Moon ,  Kun-sang Park ,  Dong-chan Lim ,  Do-sun Lee

    发明人： Su-kyoung Kim ,  Gil-heyun Choi ,  Byung-Iyul Park ,  Kwang-jin Moon ,  Kun-sang Park ,  Dong-chan Lim ,  Do-sun Lee

    IPC分类号： H01L23/532 ,  H01L23/498

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2924/13091 ,  H01L2924/00

    摘要： An integrated circuit device includes a substrate through which a first through-hole extends, and an interlayer insulating film on the substrate, the interlayer insulating film having a second through-hole communicating with the first through-hole. A Through-Silicon Via (TSV) structure is provided in the first through-hole and the second through-hole. The TSV structure extends to pass through the substrate and the interlayer insulating film. The TSV structure comprises a first through-electrode portion having a top surface located in the first through-hole, and a second through-electrode portion having a bottom surface contacting with the top surface of the first through-electrode portion and extending from the bottom surface to at least the second through-hole. Related fabrication methods are also described.

    摘要翻译： 集成电路器件包括：第一通孔延伸穿过的衬底和衬底上的层间绝缘膜，所述层间绝缘膜具有与第一通孔连通的第二通孔。 在第一通孔和第二通孔中设置有硅通孔（TSV）结构。 TSV结构延伸穿过衬底和层间绝缘膜。 TSV结构包括具有位于第一通孔中的顶表面的第一通电极部分和具有与第一贯穿电极部分的顶表面接触并从底部延伸的底表面的第二通电极部分 表面至少到第二通孔。 还描述了相关的制造方法。

    METHOD FORMING METAL FILM AND SEMICONDUCTOR FABRICATION DEVICE HAVING METAL FILM
    2.
    发明申请
    METHOD FORMING METAL FILM AND SEMICONDUCTOR FABRICATION DEVICE HAVING METAL FILM 有权
    形成金属膜的方法和金属膜的半导体制造装置

    公开(公告)号：US20110201198A1

    公开(公告)日：2011-08-18

    申请号：US12955093

    申请日：2010-11-29

    申请人： Eun-ji JUNG ,  Woong-hee SOHN ,  Su-kyoung KIM ,  Gil-heyun CHOI ,  Byung-hee KIM

    发明人： Eun-ji JUNG ,  Woong-hee SOHN ,  Su-kyoung KIM ,  Gil-heyun CHOI ,  Byung-hee KIM

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76849 ,  H01L21/28562

    摘要： A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.

    摘要翻译： 一种形成金属膜的方法包括制备其上露出由第一金属形成的绝缘层和金属层的基板; 以及通过将第二金属的有机前体供应到所述基板上以在所述绝缘层和所述金属层上同时沉积所述第二金属而形成金属覆盖层，其中所述第二金属覆盖层在所述绝缘层和所述金属层上具有不同的厚度 。

    NON-VOLATILE MEMORY DEVICE
    3.
    发明申请
    NON-VOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20120120728A1

    公开(公告)日：2012-05-17

    申请号：US13191581

    申请日：2011-07-27

    申请人： Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

    发明人： Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

    IPC分类号： G11C11/34 ,  H01L21/336 ,  H01L29/788

    CPC分类号： H01L29/7926 ,  G11C5/063 ,  G11C16/0483 ,  H01L27/11582

    摘要： A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers.

    摘要翻译： 提供了一种非易失性存储器件，包括由单晶半导体形成的衬底，垂直于衬底延伸的柱状半导体图案，多个栅电极和与衬底垂直交替堆叠的多个层间电介质层，以及 形成在所述多个栅极电极和所述多个层间电介质层之间的电荷扩展阻挡层。

    Ampoule for storing implant capable of maintaining humidity
    5.
    发明授权
    Ampoule for storing implant capable of maintaining humidity 有权
    用于储存能够保持湿度的植入物的安瓿瓶

    公开(公告)号：US09517115B2

    公开(公告)日：2016-12-13

    申请号：US14236652

    申请日：2012-02-10

    申请人： Yong Il Chung ,  Ju Dong Song ,  Eun Jung Kang ,  Da Mi Choi ,  Tae Gwan Eom ,  Kyoo Ok Choi ,  Su Kyoung Kim

    发明人： Yong Il Chung ,  Ju Dong Song ,  Eun Jung Kang ,  Da Mi Choi ,  Tae Gwan Eom ,  Kyoo Ok Choi ,  Su Kyoung Kim

    IPC分类号： A61B19/02 ,  A61C8/00

    CPC分类号： A61C8/0087 ,  A61C8/0013

    摘要： An ampoule for storing an implant capable of maintaining humidity includes: a container capable of airtight sealing at least momentarily or temporarily; a partition member which divides an accommodation space inside the container into two spaces, first and second spaces, and allows vaporized water molecules to be transported between the divided spaces; and a water molecule supply source which is accommodated in the first space of the two spaces divided by the partition member and supplies the vaporized water molecules. Therefore, the invention enables the construction of an environment which allows the hydrophilicity of the implant to be maintained for a long time, wherein the hydrophilicity is imparted to and protected from the surface of the implant or a coating layer formed on the surface of the implant.

    摘要翻译： 用于储存能够保持湿度的植入物的安瓿包括：能够至少暂时或暂时气密密封的容器; 分隔构件，其将容器内的容纳空间分成两个空间，第一和第二空间，并允许蒸发的水分子在分隔空间之间运输; 以及水分子供给源，其容纳在由分隔构件分隔的两个空间的第一空间中，并供给蒸发的水分子。 因此，本发明能够构建允许植入物的亲水性长时间保持的环境，其中亲水性赋予植入物表面或保护植入物的表面或形成在植入物表面上的涂层 。