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    MONOLITHIC GAS DISTRIBUTION MANIFOLD AND VARIOUS CONSTRUCTION TECHNIQUES AND USE CASES THEREFOR
    1.
    发明申请
    MONOLITHIC GAS DISTRIBUTION MANIFOLD AND VARIOUS CONSTRUCTION TECHNIQUES AND USE CASES THEREFOR 审中-公开
    单体气体分配管理及各种建筑技术及其应用

    公开(公告)号：US20160108523A1

    公开(公告)日：2016-04-21

    申请号：US14884575

    申请日：2015-10-15

    Applicant: Lam Research Corporation

    Inventor： Andrew C. Lee ,  Michael C. Kellogg ,  Christopher J. Pena ,  John E. Daugherty

    IPC: C23C16/455 ,  B24B37/04 ,  C23C16/04

    Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

    Abstract translation: 提供一种用于安装用于半导体处理装置的气体输送系统的气体供应部件的气体输送基板。 衬底可以包括多个层，其主表面结合在一起，形成具有用于在第一，第二，第三和第四气体供应部件的外表面上接收和安装的开口的层压板。 衬底可以包括延伸穿过内部主表面的第一气体通道，其至少部分地与延伸穿过不同内部主表面的第二气体通道重叠。 衬底可以包括第一气体管道，其包括将第一气体供应部件连接到第二气体供应部件的第一气体通道，以及包括将第三气体供应部件连接到第四气体供应部件的第二通道的第二气体管道。 还公开了用于制造气体输送基板的各种技术。

    Wafer transport assembly with integrated buffers
    2.
    发明授权
    Wafer transport assembly with integrated buffers 有权

    公开(公告)号：US11764086B2

    公开(公告)日：2023-09-19

    申请号：US17860736

    申请日：2022-07-08

    Applicant: LAM RESEARCH CORPORATION

    Inventor： David Trussell ,  John Daugherty ,  Christopher J. Pena ,  Michael C. Kellogg ,  Klay Kunkel ,  Richard H. Gould

    IPC: H01L21/67

    CPC classification number: H01L21/67196 ,  H01L21/6719 ,  H01L21/67161

    Abstract: A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

    Monolithic gas distribution manifold and various construction techniques and use cases therefor
    3.
    发明授权
    Monolithic gas distribution manifold and various construction techniques and use cases therefor 有权

    公开(公告)号：US10914003B2

    公开(公告)日：2021-02-09

    申请号：US16725173

    申请日：2019-12-23

    Applicant: Lam Research Corporation

    Inventor： Andrew C. Lee ,  Michael C. Kellogg ,  Christopher J. Pena ,  John Edward Daugherty

    IPC: C23C16/455 ,  C23C16/04 ,  C23C16/44 ,  B24B37/04

    Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

    Monolithic gas distribution manifold and various construction techniques and use cases therefor
    5.
    发明授权
    Monolithic gas distribution manifold and various construction techniques and use cases therefor 有权

    公开(公告)号：US10557197B2

    公开(公告)日：2020-02-11

    申请号：US14884575

    申请日：2015-10-15

    Applicant: Lam Research Corporation

    Inventor： Andrew C. Lee ,  Michael C. Kellogg ,  Christopher J. Pena ,  John E. Daugherty

    IPC: C23C16/455 ,  B24B37/04 ,  C23C16/04

    Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

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