中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.01 seconds)

    PLASMA PROCESSING DEVICES HAVING MULTI-PORT VALVE ASSEMBLIES
    3.
    发明申请
    PLASMA PROCESSING DEVICES HAVING MULTI-PORT VALVE ASSEMBLIES 审中-公开

    公开(公告)号：US20180323041A1

    公开(公告)日：2018-11-08

    申请号：US16030489

    申请日：2018-07-09

    Applicant: Lam Research Corporation

    Inventor： Daniel A. Brown ,  Michael C. Kellogg ,  Leonard J. Sharpless ,  Allan K. Ronne ,  James E. Tappan

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/32513 ,  H01J37/32816 ,  H01J37/32834

    Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

    PLASMA PROCESSING DEVICES HAVING MULTI-PORT VALVE ASSEMBLIES
    4.
    发明申请
    PLASMA PROCESSING DEVICES HAVING MULTI-PORT VALVE ASSEMBLIES 审中-公开
    具有多端口阀组件的等离子体处理装置

    公开(公告)号：US20160033977A1

    公开(公告)日：2016-02-04

    申请号：US14880088

    申请日：2015-10-09

    Applicant: Lam Research Corporation

    Inventor： Daniel A. Brown ,  Michael C. Kellogg ,  Leonard J. Sharpless ,  Allan K. Ronne ,  James E. Tappan

    IPC: G05D27/02 ,  G05D9/12 ,  G05D7/06

    CPC classification number: H01J37/32449 ,  H01J37/32513 ,  H01J37/32816 ,  H01J37/32834

    Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

    Abstract translation: 等离子体处理装置可以包括等离子体处理室，等离子体电极组件，晶片台，等离子体产生气体入口，多个真空端口，至少一个真空泵和多口阀组件。 多口阀组件可以包括位于等离子体处理室中的可移动密封板。 可移动密封板可以包括横向端口密封表面，该横向端口密封表面的形状和尺寸在闭合状态下与多个真空端口完全重叠，以在部分打开的状态下部分地重叠多个真空端口，并且避免了 处于打开状态的多个真空口。 多端口阀组件可以包括耦合到可移动密封板的横向致动器和联接到可移动密封板的密封致动器。

    PRESSURE CONTROLLED HEAT PIPE TEMPERATURE CONTROL PLATE
    5.
    发明申请
    PRESSURE CONTROLLED HEAT PIPE TEMPERATURE CONTROL PLATE 有权
    压力控制热管温度控制板

    公开(公告)号：US20140103806A1

    公开(公告)日：2014-04-17

    申请号：US13653923

    申请日：2012-10-17

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Michael C. Kellogg ,  Rajinder Dhindsa ,  Tom Stevenson

    IPC: B05B1/24 ,  H05H1/24

    CPC classification number: H01J37/32449

    Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

    Abstract translation: 一种用于等离子体处理室的喷头电极组件，其包括喷头电极; 固定在喷头电极上的加热板; 至少一个受压控制的热管固定到加热器板的上表面，所述至少一个压力控制的热管具有其中包含的传热液体，以及加压气体，其在所述至少一个压力内产生可变的内部压力 受控热管; 固定到所述至少一个热管的上表面的顶板; 并且其中，通过所述加热板加热所述喷头电极期间所述至少一个压力控制热管内的可变内部压力将所述传热液体从所述顶板和所述加热板之间的热路径移位，并且当从所述加热板 喷头电极将热传递液体返回到热路径。

    MULTI-SECTIONAL PLASMA CONFINEMENT RING STRUCTURE
    6.
    发明公开
    MULTI-SECTIONAL PLASMA CONFINEMENT RING STRUCTURE 审中-公开

    公开(公告)号：US20240234104A1

    公开(公告)日：2024-07-11

    申请号：US18559313

    申请日：2022-05-16

    Applicant: Lam Research Corporation

    Inventor： Alexei Marakhtanov ,  Michael C. Kellogg

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32642 ,  H01J37/32568 ,  H01J2237/3343 ,  H01L21/67069

    Abstract: A confinement ring for use in a plasma processing chamber includes an upper horizontal section, an upper vertical section, a mid-section, a lower vertical section, a lower horizontal section and a vertical extension. The upper horizontal section extends between an inner upper radius and a first outer radius of the confinement ring. The mid-section extends between inner upper radius and a second outer radius of the confinement ring. The lower horizontal section extends between an inner lower radius and the second outer radius, and the vertical extension extends down from the lower horizontal section proximate to the inner lower radius. The upper vertical section extends between the upper horizontal section and the mid-section proximate to the inner upper radius, and the lower vertical section extends between the mid-section and the lower horizontal section proximate to the second outer radius.

    Wafer transport assembly with integrated buffers
    7.
    发明授权
    Wafer transport assembly with integrated buffers 有权

    公开(公告)号：US11764086B2

    公开(公告)日：2023-09-19

    申请号：US17860736

    申请日：2022-07-08

    Applicant: LAM RESEARCH CORPORATION

    Inventor： David Trussell ,  John Daugherty ,  Christopher J. Pena ,  Michael C. Kellogg ,  Klay Kunkel ,  Richard H. Gould

    IPC: H01L21/67

    CPC classification number: H01L21/67196 ,  H01L21/6719 ,  H01L21/67161

    Abstract: A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

Patent Agency Ranking