公开(公告)号：US20190267218A1

公开(公告)日：2019-08-29

申请号：US15903682

申请日：2018-02-23

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng Wang ,  Keith Gaff ,  Christopher Kimball

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01J37/244

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US11935776B2

公开(公告)日：2024-03-19

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/683 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L22/26 ,  H01J2237/334 ,  H01L21/68785

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

公开(公告)号：US11133211B2

公开(公告)日：2021-09-28

申请号：US16108416

申请日：2018-08-22

Applicant: Lam Research Corporation

Inventor： Feng Wang ,  Eric A. Pape

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate support includes: a first plate configured to support a substrate; and a second plate that is connected to the first plate. The second plate includes at least one of: an internal coolant channel configured to receive coolant; and an internal gas channel configured to receive gas. The at least one of the internal coolant channel and the internal gas channel includes one of: chamfered internal corners; and staired internal corners.

公开(公告)号：US10923380B2

公开(公告)日：2021-02-16

申请号：US15894670

申请日：2018-02-12

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01J37/00

Abstract: An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. A first elastomer ring is integrated to the first surface and extending around the aperture.

公开(公告)号：US11848177B2

公开(公告)日：2023-12-19

申请号：US15903682

申请日：2018-02-23

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng Wang ,  Keith Gaff ,  Christopher Kimball

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01J37/244 ,  H01L21/687

CPC classification number: H01J37/32715 ,  H01J37/244 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/68742

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US09922857B1

公开(公告)日：2018-03-20

申请号：US15343010

申请日：2016-11-03

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/66 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785 ,  H01L22/26

Abstract: An edge ring is provided for use with an electrostatic wafer chuck and an electrostatic ring chuck with a central aperture with a cooling groove and with ring clamping electrodes and at least one ring backside temperature channel to regulate the temperature of the edge ring. The edge ring comprises an edge ring body to be placed over the electrostatic ring chuck with ring clamping electrodes, wherein the edge ring body comprises conductive portions which are placed over the ring clamping electrodes, when the edge ring body is placed over the electrostatic ring chuck and a first elastomer ring integrated to a first surface of the edge ring body and surrounding a central aperture of the first surface, wherein when the edge ring body is placed over the electrostatic ring chuck, the first elastomer ring is used to seal the cooling groove.

公开(公告)号：US11967517B2

公开(公告)日：2024-04-23

申请号：US17429434

申请日：2020-01-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng Wang ,  Keith Gaff ,  Christopher Kimball ,  Darrell Ehrlich

IPC: H01T23/00 ,  C04B37/00 ,  C04B41/00 ,  C04B41/45 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/6833 ,  C04B37/001 ,  C04B41/009 ,  C04B41/4531 ,  H01J37/32715 ,  H01J37/32091 ,  H01J2237/2007

Abstract: An electrostatic chuck for a substrate processing system includes a monolithic body made of ceramic. A plurality of first electrodes are arranged in the monolithic body adjacent to a top surface of the monolithic body and that are configured to selectively receive a chucking signal. A gas channel is formed in the monolithic body and is configured to supply back side gas to the top surface. Coolant channels are formed in the monolithic body and are configured to receive fluid to control a temperature of the monolithic body.

公开(公告)号：US20200066564A1

公开(公告)日：2020-02-27

申请号：US16108416

申请日：2018-08-22

Applicant: Lam Research Corporation

Inventor： Feng Wang ,  Eric A. Pape

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate support includes: a first plate configured to support a substrate; and a second plate that is connected to the first plate. The second plate includes at least one of: an internal coolant channel configured to receive coolant; and an internal gas channel configured to receive gas. The at least one of the internal coolant channel and the internal gas channel includes one of: chamfered internal corners; and staired internal corners.