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    METHOD AND APPARATUS FOR DIAGNOSING STATUS OF PARTS IN REAL TIME IN PLASMA PROCESSING EQUIPMENT
    2.
    发明申请
    METHOD AND APPARATUS FOR DIAGNOSING STATUS OF PARTS IN REAL TIME IN PLASMA PROCESSING EQUIPMENT 有权
    用于在等离子体处理设备中实时诊断部件状态的方法和装置

    公开(公告)号：US20130093443A1

    公开(公告)日：2013-04-18

    申请号：US13706612

    申请日：2012-12-06

    Applicant: Lam Research Corporation

    Inventor： Roger Patrick

    IPC: G01N17/00

    CPC classification number: G01N27/20 ,  C23C16/50 ,  G01N17/00 ,  G01N17/04 ,  Y10T29/49004

    Abstract: Apparatus and methods for diagnosing status of a consumable part of a plasma reaction chamber, the consumable part including at least one conductive element embedded therein. The method includes the steps of: coupling the conductive element to a power supply so that a bias potential relative to the ground is applied to the conductive element; exposing the consumable part to plasma erosion until the conductive element draws a current from the plasma upon exposure of the conductive element to the plasma; measuring the current; and evaluating a degree of erosion of the consumable part due to the plasma based on the measured current.

    Abstract translation: 用于诊断等离子体反应室的可消耗部件的状态的装置和方法，所述可消耗部件包括嵌入其中的至少一个导电元件。 该方法包括以下步骤：将导电元件耦合到电源，使得相对于地面的偏置电位被施加到导电元件; 将所述消耗部件暴露于等离子体侵蚀，直到所述导电元件在将所述导电元件暴露于所述等离子体时从所述等离子体吸取电流; 测量电流; 以及基于测量的电流评估由于等离子体引起的消耗部件的侵蚀程度。

    COMPACT HIGH DENSITY PLASMA SOURCE
    3.
    发明申请
    COMPACT HIGH DENSITY PLASMA SOURCE 有权

    公开(公告)号：US20210183619A1

    公开(公告)日：2021-06-17

    申请号：US17263539

    申请日：2019-07-26

    Applicant: Lam Research Corporation

    Inventor： Roger Patrick ,  Neil M.P. Benjamin ,  Lee Chen ,  Alan Schoepp ,  Clint Edward Thomas ,  Thomas W. Anderson ,  Sang Heon Song

    IPC: H01J37/32

    Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

    Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
    4.
    发明授权
    Method and apparatus for diagnosing status of parts in real time in plasma processing equipment 有权
    用于在等离子体处理设备中实时诊断部件状态的方法和装置

    公开(公告)号：US09541514B2

    公开(公告)日：2017-01-10

    申请号：US14969614

    申请日：2015-12-15

    Applicant: Lam Research Corporation

    Inventor： Roger Patrick

    IPC: G01R27/08 ,  G01N27/20 ,  G01N17/00 ,  C23C16/50 ,  G01N17/04

    CPC classification number: G01N27/20 ,  C23C16/50 ,  G01N17/00 ,  G01N17/04 ,  Y10T29/49004

    Abstract: Apparatus and methods for diagnosing status of a consumable part of a plasma reaction chamber, the consumable part including at least one conductive element embedded therein. The method includes the steps of: coupling the conductive element to a power supply so that a bias potential relative to the ground is applied to the conductive element; exposing the consumable part to plasma erosion until the conductive element draws a current from the plasma upon exposure of the conductive element to the plasma; measuring the current; and evaluating a degree of erosion of the consumable part due to the plasma based on the measured current.

    Abstract translation: 用于诊断等离子体反应室的可消耗部件的状态的装置和方法，所述可消耗部件包括嵌入其中的至少一个导电元件。 该方法包括以下步骤：将导电元件耦合到电源，使得相对于地面的偏置电位被施加到导电元件; 将所述消耗部件暴露于等离子体侵蚀，直到所述导电元件在将所述导电元件暴露于所述等离子体时从所述等离子体吸取电流; 测量电流; 以及基于测量的电流评估由于等离子体引起的消耗部件的侵蚀程度。

    Compact high density plasma source
    8.
    发明授权
    Compact high density plasma source 有权

    公开(公告)号：US12198896B2

    公开(公告)日：2025-01-14

    申请号：US17263539

    申请日：2019-07-26

    Applicant: Lam Research Corporation

    Inventor： Roger Patrick ,  Neil M. P. Benjamin ,  Lee Chen ,  Alan Schoepp ,  Clint Edward Thomas ,  Thomas W. Anderson ,  Sang Heon Song

    IPC: H01J37/32 ,  H01L21/02

    Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

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